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    64N50P Search Results

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    64N50P Price and Stock

    Littelfuse Inc IXFR64N50P

    MOSFET N-CH 500V 35A ISOPLUS247
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    DigiKey IXFR64N50P Tube 30 1
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    Newark IXFR64N50P Bulk 300
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    Littelfuse Inc IXFX64N50P

    MOSFET N-CH 500V 64A PLUS247-3
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    DigiKey IXFX64N50P Tube 2 1
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    Newark IXFX64N50P Bulk 300
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    Littelfuse Inc IXFK64N50P

    MOSFET N-CH 500V 64A TO264AA
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    DigiKey IXFK64N50P Tube 300
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    Littelfuse Inc IXFN64N50P

    MOSFET N-CH 500V 61A SOT227B
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    DigiKey IXFN64N50P Tube 1
    • 1 $29.93
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    Newark IXFN64N50P Bulk 300
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    IXYS Corporation IXFN64N50PD3

    MOSFET N-CH 500V 50A SOT227B
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    New Advantage Corporation IXFN64N50PD3 24 1
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    64N50P Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    sot 227b diode fast

    Abstract: SOT227B 64N50 64N50P IXFN64N50P sot 227b
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 64 A ≤ 85 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 64N50P 405B2 sot 227b diode fast SOT227B 64N50 64N50P IXFN64N50P sot 227b

    64N50

    Abstract: fd 715 64N50P ISOPLUS247
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFR 64N50P VDSS ID25 RDS on trr ISOPLUS247TM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 43 A ≤ 100 mΩ Ω ≤ 200 ns (Electrically Isolated Back Surface) Symbol


    Original     		PDF 64N50P ISOPLUS247TM 64N50 fd 715 64N50P ISOPLUS247

    64N50P

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFN 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated, Fast Intrinsic Diode = = ≤ ≤ 500 V 64 A Ω 85 mΩ 200 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF 64N50P OT-227 E153432 64N50P

    diode m4

    Abstract: 64N50 uc pfc NS2004
    Text: Preliminary Technical Information PolarHVTM HiPerFET Power MOSFET IXFN 64N50PD2 VDSS ID25 RDS on Boost Configuration for PFC Circuits trr 3 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 52 A ≤ 85 m Ω ≤ 200 ns 4 2 1 Symbol


    Original     		PDF 64N50PD2 405B2 diode m4 64N50 uc pfc NS2004

    64N50

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 64N50P IXFX 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 AA (IXTK) Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 64N50P 64N50P O-264 PLUS247 405B2 64N50

    64N50P

    Abstract: 64N50 PLUS247 ixfk64n50p IXFX64N50P
    Text: PolarHVTM HiPerFET Power MOSFET IXFK 64N50P IXFX 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 64N50P 64N50P 64N50 PLUS247 ixfk64n50p IXFX64N50P

    64N50

    Abstract: 64n50p IXFX64N50P PLUS247
    Text: Advance Technical Information PolarHVTM HiPerFET Power MOSFET IXFK 64N50P IXFX 64N50P VDSS ID25 RDS on trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-264 AA (IXFK) Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF 64N50P O-264 64N50 64n50p IXFX64N50P PLUS247

    64N50

    Abstract: 64N50P ISOPLUS247
    Text: PolarHVTM HiPerFET Power MOSFET IXFR 64N50P VDSS ID25 RDS on trr ISOPLUS247TM (Electrically Isolated Back Surface) = 500 V = 35 A ≤ 95 mΩ Ω ≤ 200 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings


    Original     		PDF 64N50P ISOPLUS247TM 64N50 64N50P ISOPLUS247

    "SOT-227 B" dimensions

    Abstract: SOT-227 Package 64N50P 64N50 BE 64A HiperFET SOT-227B Outline IXFN64N50P
    Text: PolarHVTM HiPerFET Power MOSFET VDSS = 500 V ID25 = 61 A RDS on ≤ 85 m Ω ≤ 200 ns trr IXFN 64N50P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 64N50P OT-227 E153432 "SOT-227 B" dimensions SOT-227 Package 64N50P 64N50 BE 64A HiperFET SOT-227B Outline IXFN64N50P

    2n60p

    Abstract: gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P
    Text: 2005 / 1 IXYS NEWS MSC IGBT Module Line to include Economical Small 6Pack Incorporating Latest NPT3 and Trench IGBT Technologies IXYS announced that in keeping up with ambitious growth plans in the IGBT market, its European Operation, a leader in Direct Copper Bond


    Original     		PDF IXFR48N60P 18N60P 30N60P 22N60P 36N60P 26N60P 48N60P PLUS220 IXTV22N50PS. 2n60p gsm based speed control of single phase induction motor thyristor family 48N60 600v 20 amp mosfet 14n60 300V HiPerFET power MOSFET single die MOSFET Wireless A.C motor speed controlling system IXYS SCR MODULE Gate Drive 15N60P

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		PDF O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p