650V Search Results

650V Result Highlights (5)

Part	Manufacturer	Description
RJP65S03DWT-80#X0	Renesas Electronics Corporation	IGBT 650V 30A Chip
RJP65S08DWA-00#W0	Renesas Electronics Corporation	IGBT 650V 200A Wafer
RJP65S03DWS-80#W0	Renesas Electronics Corporation	IGBT 650V 30A Sawn
RJP65S03DWA-80#W0	Renesas Electronics Corporation	IGBT 650V 30A Wafer
RJP65S08DWT-80#X0	Renesas Electronics Corporation	IGBT 650V 200A Chip

650V Price and Stock

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Panasonic Electronic Components ERJ-3EKF1650V RES SMD 165 OHM 1% 1/10W 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERJ-3EKF1650V	Reel	244,400		5,000	1 - 10 - 100 - 1000 - 10000 $0.00633	Buy Now
RS	ERJ-3EKF1650V	Bulk	46,778		1	1 $0.009 10 $0.009 100 $0.009 1000 $0.009 10000 $0.009	Buy Now
Bristol Electronics	ERJ-3EKF1650V		8,717			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip1Stop	ERJ-3EKF1650V	Cut Tape	83			1 - 10 - 100 - 1000 $0.00768 10000 $0.00768	Buy Now
Ozdisan Elektronik	ERJ-3EKF1650V					1 - 10 - 100 $0.00871 1000 $0.00871 10000 $0.0067	Get Quote
Panasonic Electronic Components ERJ-6ENF6650V RES SMD 665 OHM 1% 1/8W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERJ-6ENF6650V	Digi-Reel	99,586		1	1 $0.11 10 $0.051 100 $0.0279 1000 $0.01698 10000 $0.01698	Buy Now
	ERJ-6ENF6650V	Cut Tape	99,586		1	1 $0.11 10 $0.051 100 $0.0279 1000 $0.01698 10000 $0.01698	Buy Now
	ERJ-6ENF6650V	Reel	95,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.01163	Buy Now
Newark	ERJ-6ENF6650V	Reel	20,000		50,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	ERJ-6ENF6650V	Cut Tape	181		1	1 $0.099 10 $0.032 100 $0.021 1000 $0.017 10000 $0.012	Buy Now
RS	ERJ-6ENF6650V	Bulk			50,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Bristol Electronics	ERJ-6ENF6650V		4,940		89	1 - 10 - 100 $0.0563 1000 $0.0094 10000 $0.0094	Buy Now
	ERJ-6ENF6650V		4,870			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip1Stop	ERJ-6ENF6650V	Cut Tape	14,800			1 - 10 - 100 $0.00747 1000 $0.0074 10000 $0.0074	Buy Now

Master Electronics	ERJ-6ENF6650V		30,000			1 - 10 - 100 - 1000 - 10000 $0.0075	Buy Now
Panasonic Electronic Components ERJ-8ENF1650V RES SMD 165 OHM 1% 1/4W 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERJ-8ENF1650V	Cut Tape	87,057		1	1 $0.17 10 $0.086 100 $0.0486 1000 $0.03078 10000 $0.03078	Buy Now
	ERJ-8ENF1650V	Digi-Reel	87,057		1	1 $0.17 10 $0.086 100 $0.0486 1000 $0.03078 10000 $0.03078	Buy Now
	ERJ-8ENF1650V	Reel	80,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.02193	Buy Now
Bristol Electronics	ERJ-8ENF1650V		11,813			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Ozdisan Elektronik	ERJ-8ENF1650V					1 - 10 - 100 $0.01574 1000 $0.01574 10000 $0.0129	Get Quote
Panasonic Electronic Components ERJ-6ENF1650V RES SMD 165 OHM 1% 1/8W 0805
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERJ-6ENF1650V	Reel	10,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.01172	Buy Now
Newark	ERJ-6ENF1650V	Cut Tape	15,449		1	1 $0.003 10 $0.003 100 $0.003 1000 $0.003 10000 $0.003	Buy Now
Chip1Stop	ERJ-6ENF1650V	Cut Tape	3,600			1 - 10 - 100 - 1000 $0.0153 10000 $0.0152	Buy Now
New Advantage Corporation	ERJ-6ENF1650V		70,000		1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Panasonic Electronic Components ERA-3AEB1650V RES SMD 165 OHM 0.1% 1/10W 0603
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ERA-3AEB1650V	Digi-Reel	8,496		1	1 $0.14 10 $0.1 100 $0.0708 1000 $0.04865 10000 $0.04865	Buy Now
	ERA-3AEB1650V	Cut Tape	8,496		1	1 $0.14 10 $0.1 100 $0.0708 1000 $0.04865 10000 $0.04865	Buy Now
	ERA-3AEB1650V	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.03184	Buy Now
Master Electronics	ERA-3AEB1650V		15,000			1 - 10 - 100 - 1000 - 10000 $0.0329	Buy Now

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650V Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Ignition Driver IC Abstract: programmable ignition control PT5615 ptc fluorescent ballast HALF-BRIDGE DRIVER PT5615-S high frequency ignition Text: PT5615 Ballast Control IC DESCRIPTION The PT5615 is a ballast control IC, with the 650V half-bridge driver and full protections, designed to drive all types of fluorescent lamps. The features such as programmable preheat time and frequency, programmable and precise run frequency, self-adapting	Original	PDF	PT5615 Ignition Driver IC programmable ignition control ptc fluorescent ballast HALF-BRIDGE DRIVER PT5615-S high frequency ignition
FCH76N60 Abstract: No abstract text available Text: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based	Original	PDF	FCH76N60N FCH76N60N 218nC) FCH76N60
Untitled Abstract: No abstract text available Text: SCS230AE2 SiC Schottky Barrier Diode Datasheet lOutline VR 650V IF 15A/30A* QC 23nC TO-247 * Per leg / Both legs (1) (2) lFeatures (3) lInner circuit 1) Shorter recovery time 2) Reduced temperature dependence (1) Anode (2) Cathode (3) Anode 3) High-speed switching possible	Original	PDF	SCS230AE2 5A/30A* O-247 R1102B
Untitled Abstract: No abstract text available Text: Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 650V MOSFET BM2PXX3 Series ●General The PWM type DC/DC converter BM2PXX3 for AC/DC provide an optimum system for all products that include an electrical outlet. BM2PXX3 supports both isolated and non-isolated	Original	PDF
Untitled Abstract: No abstract text available Text: APT45GR65BSCD10 APT45GR65BSCD10 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and	Original	PDF	APT45GR65BSCD10
Untitled Abstract: No abstract text available Text: Datasheet AC/DC Drivers PWM type DC/DC converter IC Included 650V MOSFET BM2PXX2 Series ●General The PWM type DC/DC converter BM2PXX2 for AC/DC provide an optimum system for all products that include an electrical outlet. BM2PXX2 supports both isolated and non-isolated	Original	PDF
STP9NC65 Abstract: STP9NC65FP Text: STP9NC65 STP9NC65FP N-CHANNEL 650V - 0.75Ω - 8A TO-220/TO-220FP PowerMesh II MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STP9NC65 650 V < 0.90 Ω 8A STP9NC65FP 650 V < 0.90 Ω 8A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED	Original	PDF	STP9NC65 STP9NC65FP O-220/TO-220FP O-220 O-220FP STP9NC65 STP9NC65FP
ap2764a Abstract: No abstract text available Text: AP2764AP-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Test D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement BVDSS 650V RDS ON 1.1Ω ID 9A G S Description AP2764A series are specially designed as main switching devices for	Original	PDF	AP2764AP-A AP2764A 265VAC O-220 O-220 2764AP
09N70P Abstract: 09n70 AP09N70P-A 09N7 Text: AP09N70P-A RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET D ▼ 100% Avalanche Test D BVDSS 650V RDS ON 0.75Ω ▼ Fast Switching ▼ Simple Drive Requirement GG ID ▼ RoHS Compliant 9A S S Description The TO-220 package is widely preferred for all commercial-industrial	Original	PDF	AP09N70P-A O-220 O-220 09N70P 09N70P 09n70 AP09N70P-A 09N7
STW45NM60 Abstract: No abstract text available Text: STW45NM60 N-CHANNEL 650V @Tjmax - 0.09Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM60 VDSS @Tjmax RDS(on) ID 650V < 0.11Ω 45 A TYPICAL RDS(on) = 0.09Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE	Original	PDF	STW45NM60 O-247 STW45NM60
Untitled Abstract: No abstract text available Text: MB09N65B0000000 N-Ch 650V Fast Switching MOSFETs General Description Product Summery The MB09N65B is the highest performance N-ch MOSFETs with specialized high voltage technology, which provide excellent RDSON and gate charge for most of the SPS, Charger ,Adapter	Original	PDF	MB09N65B0000000 MB09N65B D020210 O-263 800pcs
5N65 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 5N65 Power MOSFET 4.5A, 650V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics.	Original	PDF	O-252 O-251 O-220 QW-R502-592 5N65
7n65f Abstract: UTC7N65 TO-220F2 7n65 Text: UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	PDF	O-220 O-220F1 O-220F2 QW-R502-104 7n65f UTC7N65 TO-220F2 7n65
UTC7N65 Abstract: 7n65 7N65L-TQ2-T Text: UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged	Original	PDF	O-220 O-220F O-220F1 QW-R502-104 UTC7N65 7n65 7N65L-TQ2-T

7N65A Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N65A Power MOSFET 7A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65A is a high voltage N-Channel enhancement mode power field effect transistors designed to have minimize on-state resistance, superior switching performance and withstand	Original	PDF	7N65A 7N65A QW-R502-585
586A Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 7N65Z Power MOSFET 7.4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche	Original	PDF	7N65Z 7N65Z QW-R502-586 586A
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	QW-R502-370
Untitled Abstract: No abstract text available Text: SIK04N65 4A , 650V , RDS ON 2.6Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free 2 TO-262(I -Pack) DESCRIPTION The SIK04N65 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide	Original	PDF	SIK04N65 O-262 SIK04N65 11-Jun-2013
SSE12N65SL Abstract: MosFET Text: SSE12N65SL 12A , 650V , RDS ON 0.8Ω N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-220P DESCRIPTION The SSE12N65SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide	Original	PDF	SSE12N65SL O-220P SSE12N65SL 07-Nov-2013 MosFET
fgh75t65 Abstract: FGH75T65UPD fgh75t65up fgh75t Text: FGH75T65UPD 650V, 75A Field Stop Trench IGBT Features General Description 175oC • Maximum Junction Temperature : TJ = Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum performance for Solar Inverter , UPS and Digital Power Generator	Original	PDF	FGH75T65UPD FGH75T65UPD 175oC fgh75t65 fgh75t65up fgh75t
mosfet 600V 16A Abstract: FCP16N60 FCPF16N60 Text: SuperFETTM FCP16N60 / FCPF16N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and	Original	PDF	FCP16N60 FCPF16N60 FCPF16N60 mosfet 600V 16A
AP10N70 Abstract: No abstract text available Text: AP10N70R/P-A Pb Free Plating Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Rated Test D ▼ Fast Switching Performance ▼ Simple Drive Requirement 650V RDS ON 0.6Ω ID G ▼ RoHS Compliant BVDSS 10A S	Original	PDF	AP10N70R/P-A AP10N70 265VAC O-220 O-262 O-220 100us 100ms
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2N65L Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged	Original	PDF	2N65L 2N65L QW-R502-580
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 2N65K-MT Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high	Original	PDF	2N65K-MT 2N65K-MT 2N65KL-TA3-T 2N65KG-TA3-T QW-R502-B04

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650V Search Results

650V Result Highlights (5)

650V Price and Stock

Panasonic Electronic Components ERJ-3EKF1650V

Panasonic Electronic Components ERJ-6ENF6650V

Panasonic Electronic Components ERJ-8ENF1650V

Panasonic Electronic Components ERJ-6ENF1650V

Panasonic Electronic Components ERA-3AEB1650V

650V Datasheets Context Search

Ignition Driver IC

FCH76N60

Untitled

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STP9NC65

ap2764a

09N70P

STW45NM60

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5N65

7n65f

UTC7N65

7N65A

586A

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SSE12N65SL

fgh75t65

mosfet 600V 16A

AP10N70

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