P12NK60
Abstract: No abstract text available
Text: STP12NK60Z STF12NK60Z N-channel 650V @Tjmax- 0.53Ω - 10A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET Features Type VDSS @Tjmax STP12NK60Z 650V <0.640Ω 10A 150W STF12NK60Z 650V <0.640Ω 10A RDS(on) ID PW 35W 3 3 • Extremely high dv/dt capability
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STP12NK60Z
STF12NK60Z
O-220
/TO-220FP
O-220FP
O-220
P12NK60
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Untitled
Abstract: No abstract text available
Text: STP12NK60Z STF12NK60Z N-channel 650V @Tjmax- 0.53Ω - 10A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET General features Type VDSS @Tjmax STP12NK60Z 650V <0.640Ω 10A 150W STF12NK60Z 650V <0.640Ω 10A RDS(on) ID PW 35W 3 3 • Extremely high dv/dt capability
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STP12NK60Z
STF12NK60Z
O-220
/TO-220FP
O-220FP
O-220
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CEP1175
Abstract: CEF1175
Text: CEP1175/CEB1175 CEF1175 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEP1175 650V 1Ω 10A 10V CEB1175 650V 1Ω 10A 10V CEF1175 650V 1Ω 10A e 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability.
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CEP1175/CEB1175
CEF1175
CEP1175
CEB1175
O-263
O-220
O-220F
O-220/263
CEP1175
CEF1175
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYP10N65C3D1 XPTTM 650V IGBT GenX3TM w/Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 10A 2.50V 23ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR
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IXYP10N65C3D1
IC110
20-60kHz
O-220
IF110
10N65C3
0-13-A
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Mosfet
Abstract: SSF10N65
Text: SSF10N65 650V N-Channel MOSFET Main Product Characteristics VDSS 650V RDS on 0.9Ω (typ.) ID 10A TO-220 Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF10N65
O-220
Mosfet
SSF10N65
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f11nm60
Abstract: F11NM60N p11nm60n STD11NM60N STD11NM60N-1 p11nm60 JESD97 STF11NM60N STP11NM60N
Text: STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V
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STD11NM60N
STD11NM60N-1
STP11NM60N
STF11NM60N
O-220
O-220FP-
STD11NM60N
STP11NM60N
f11nm60
F11NM60N
p11nm60n
STD11NM60N-1
p11nm60
JESD97
STF11NM60N
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F11NM60N
Abstract: f11nm60 p11nm60 JESD97 STD11NM60N STD11NM60N-1 STF11NM60N STP11NM60N f11n
Text: STD11NM60N - STD11NM60N-1 STP11NM60N - STF11NM60N N-channel 600V - 0.37Ω - 10A - TO-220 - TO-220FP- IPAK - DPAK Second generation MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID 3 2 1 3 STD11NM60N 650V <0.45Ω 10A STD11NM60N-1 650V
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STD11NM60N
STD11NM60N-1
STP11NM60N
STF11NM60N
O-220
O-220FP-
STD11NM60N
STP11NM60N
F11NM60N
f11nm60
p11nm60
JESD97
STD11NM60N-1
STF11NM60N
f11n
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p10nk60
Abstract: p10nk60z p10nk60zfp B10n STP10NK60ZFP
Text: STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP - STW10NK60Z N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS @T jMax RDS on ID Pw STB10NK60Z-1 650V <0.75Ω 10A 115W STB10NK60Z 650V
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STB10NK60Z/-1-
STP10NK60Z
STP10NK60ZFP
STW10NK60Z
O-220/FP
O-247
STB10NK60Z-1
STB10NK60Z
p10nk60
p10nk60z
p10nk60zfp
B10n
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p10nk60
Abstract: p10nk60zfp VDD-300 STP10NK60ZFP B10NK B10n W10NK60Z B10NK60Z p10nk STB10NK60Z
Text: STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP - STW10NK60Z N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS @TjMax RDS on ID Pw STB10NK60Z-1 650V <0.75Ω 10A 115W STB10NK60Z 650V
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STB10NK60Z/-1-
STP10NK60Z
STP10NK60ZFP
STW10NK60Z
O-220/FP
O-247
STB10NK60Z-1
STB10NK60Z
STP10NK60ZFP
p10nk60
p10nk60zfp
VDD-300
B10NK
B10n
W10NK60Z
B10NK60Z
p10nk
STB10NK60Z
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P12NM60
Abstract: STP12NM60N
Text: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω
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STB12NM60N/-1
STF12NM60N
STP12NM60N
STW12NM60N
O-220/FP
O-247
STB12NM60N
STB12NM60N-1
P12NM60
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P12NM60
Abstract: F12NM60N STF12NM60N
Text: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω
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STB12NM60N/-1
STF12NM60N
STP12NM60N
STW12NM60N
O-220/FP
O-247
STB12NM60N
STB12NM60N-1
P12NM60
F12NM60N
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P12NM60
Abstract: F12NM60N STP12NM60N STP12NM60 STB12NM60N STB12NM60N-1 STF12NM60N STW12NM60N
Text: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω
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STB12NM60N/-1
STF12NM60N
STP12NM60N
STW12NM60N
O-220/FP
O-247
STB12NM60N
STB12NM60N-1
STP12NM60N
P12NM60
F12NM60N
STP12NM60
STB12NM60N
STB12NM60N-1
STF12NM60N
STW12NM60N
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYP10N65C3 XPTTM 650V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60kHz Switching = = ≤ = 650V 10A 2.5V 23ns CE Tab TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXYP10N65C3
IC110
20-60kHz
O-220
10N65C3
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F12NM60N
Abstract: STP12NM60N STP12NM60 STB12NM60N STB12NM60N-1 STF12NM60N STW12NM60N
Text: STB12NM60N/-1 - STF12NM60N STP12NM60N - STW12NM60N N-channel 600V - 0.35Ω - 10A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID 3 3 12 1 STB12NM60N 650V < 0.41Ω 10A STB12NM60N-1 650V < 0.41Ω
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STB12NM60N/-1
STF12NM60N
STP12NM60N
STW12NM60N
O-220/FP
O-247
STB12NM60N
STB12NM60N-1
STP12NM60N
F12NM60N
STP12NM60
STB12NM60N
STB12NM60N-1
STF12NM60N
STW12NM60N
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F10N65
Abstract: P10N65
Text: PJP10N65 / PJF10N65 TO-220AB / ITO-220AB 650V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 650V, RDS ON =1.0Ω@VGS=10V, ID=5.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP10N65
PJF10N65
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
F10N65
P10N65
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXYP15N65C3D1M XPTTM 650V IGBT GenX3TM w/Diode Extreme Light Punch Through IGBT for 20-60kHz Switching VCES = IC110 = VCE sat tfi(typ) = 650V 8A 2.5V 28ns OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings
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IXYP15N65C3D1M
20-60kHz
IC110
O-220
IF110
15N65C3
0-13-A
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYP15N65C3D1M XPTTM 650V IGBT GenX3TM w/Diode Electrically Isolated Tab VCES = IC110 = VCE(sat) tfi(typ) = 650V 9A 2.5V 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol
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IXYP15N65C3D1M
IC110
20-60kHz
O-220
IF110
15N65C3
0-13-A
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10N65F
Abstract: No abstract text available
Text: HY10N65T / HY10N65FT 650V / 10A 650V, RDS ON =1.0Ω@VGS=10V, ID=5.0A N-Channel Enhancement Mode MOSFET Features • • • • • • Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS
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HY10N65T
HY10N65FT
2002/95/EC
ITO-220AB
O-220AB
O-220AB
ITO-220AB
MIL-STD-750
HY10N65T
10N65T
10N65F
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SML25SCM650N2B
Abstract: No abstract text available
Text: SiC 650V N-CHANNEL MOSFET SML25SCM650N2B • 650V SiC MOSFET In A Hermetic SMD1 TO-276AB Package • Designed for High Temperature Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS VGS ID IDM PD
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SML25SCM650N2B
O-276AB)
SML25SCM650N2B
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10N65C
Abstract: No abstract text available
Text: Advance Technical Information IXYP10N65C3D1M XPTTM 650V IGBT GenX3TM w/Diode Electrically Isolated Tab VCES = IC110 = VCE(sat) tfi(typ) = 650V 7A 2.6V 23ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol Test Conditions
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IXYP10N65C3D1M
IC110
20-60kHz
O-220
IF110
10N65C3
1-14-A
10N65C
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYA20N65C3 IXYH20N65C3 XPTTM 650V IGBT GenX3TM VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60 kHz Switching 650V 20A 2.5V 28ns TO-263 AA (IXYA) Symbol Test Conditions Maximum Ratings
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IXYA20N65C3
IXYH20N65C3
IC110
O-263
20N65C3
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Infineon diffusion solder
Abstract: Infineon power diffusion process 300v dc 230v ac inverter r2l diode igbt 400V 5A IDV06S60C diode 400V 4A IDW16G65C5 idv02s60c schottky 400v
Text: 600/650V Silicon Carbide thinQ! Diodes Selection Guide Your way is our way: improve efficiency and solution costs thinQ!™ Silicon Carbide Schottky diodes: more than 10 years experience into Generation 5 650V Advantages of Silicon Carbide over Silicon devices
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600/650V
SDB06S60
IDD02SG60C
IDD03SG60C
IDD04SG60C
IDD05SG60C
IDD06SG60C
IDD08SG60C
IDD09SG60C
IDD10SG60C
Infineon diffusion solder
Infineon power diffusion process
300v dc 230v ac inverter
r2l diode
igbt 400V 5A
IDV06S60C
diode 400V 4A
IDW16G65C5
idv02s60c
schottky 400v
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH50N65C3H1 XPTTM 650V IGBT GenX3TM w/ Sonic Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 20-60kHz Switching 650V 50A 2.10V 27ns TO-247AD Symbol Test Conditions Maximum Ratings
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IXYH50N65C3H1
IC110
20-60kHz
O-247AD
IF110
50N65C3
8-09-13/DMHP19-067F
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Untitled
Abstract: No abstract text available
Text: APT45GR65B_SSCD10 APT45GR65BSCD10 APT45GR65SSCD10 650V, 45A, VCE on = 1.9V Typical Ultra Fast NPT - IGBT (B) The Ultra Fast 650V NPT-IGBT® family of products is the newest generation of IGBTs optimized for outstanding ruggedness and best trade-off between conduction and
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SSCD10
APT45GR65BSCD10
APT45GR65SSCD10
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