65NM SRAM Search Results

65NM SRAM Result Highlights (5)

Part	Manufacturer	Description
MD2114A-5	Rochester Electronics LLC	SRAM
HM3-6504B-9	Rochester Electronics LLC	Standard SRAM, 4KX1, 220ns, CMOS, PDIP18
HM1-6516-9	Rochester Electronics LLC	Standard SRAM, 2KX8, 200ns, CMOS, CDIP24
27S03ADM/B	Rochester Electronics LLC	27S03A - SRAM
29705/BXA	Rochester Electronics LLC	29705 - SRAM

65NM SRAM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Flip-chip 1.8V SRAM Abstract: 65nm 65nm sram CS200 CS100 CS200A cmos logic 90nm Text: 65nm CMOS Technology, CS200 / CS200A Description As miniaturization of silicon devices progresses, Fujitsu provides the most competitive, world-class technology to ASIC and COT customers. Fujitsu's 65nm technology has shrunk gates by 25% when compared to the 90nm technology.	Original	PDF	CS200 CS200A CS100 CS200) WFS-FS-21139-9/2005 Flip-chip 1.8V SRAM 65nm 65nm sram CS200A cmos logic 90nm
180-nm CMOS standard cell library inverter Abstract: 130 nm CMOS standard cell library 45-nm CMOS standard cell library process technology 45 nm library CS200A 130nm 130-nm CMOS standard cell library inverter S/130 nm CMOS standard cell library SEM 2006 CS201 Text: Fujitsu @ 65nm: Providing Solutions through Integrated Design Services The Fujitsu Advantage…Not Just a Foundry Contents Benefits of leading-edge technology at 65nm Challenges Solutions Fujitsu Microelectronics America, Inc. 2 FSA Semiconductor Forum, June 14, 2006	Original	PDF	130nm 180-nm CMOS standard cell library inverter 130 nm CMOS standard cell library 45-nm CMOS standard cell library process technology 45 nm library CS200A 130-nm CMOS standard cell library inverter S/130 nm CMOS standard cell library SEM 2006 CS201
samsung S3C6410 Abstract: S3c6410 s3c6410 datasheet s3c6410 ARM11 processor Samsung S3C6410 ARM ARM1176ZJF S3C6430 oneDRAM S3C64 s3c6410 arm1176JZF datasheet Text: Samsung S3C6410 Mobile Processor POWERING ADVANCED PERSONAL NAVIGATION DEVICES AND SMARTPHONES RUNNING DEMANDING 3D APPLICATIONS The 65nm S3C6410 reduces power requirements and also includes interfaces for lowpower memory while supporting DVFS. The processor’s capabilities	Original	PDF	S3C6410 S3C6410 32-bit ARM11 64-bit 667MHz 11a/b/g 12-bit S3C6400 samsung S3C6410 s3c6410 datasheet s3c6410 ARM11 processor Samsung S3C6410 ARM ARM1176ZJF S3C6430 oneDRAM S3C64 s3c6410 arm1176JZF datasheet
Infineon X-GOLD 213 Abstract: X-GOLDTM213 xgold 213 infineon x-gold X-GOLD 208 INFINEON infineon baseband processor x-gold 208 X-GOLD 213 INFINEON xgold X-GOLD x-gold 213 Text: Product Brief X-GOLDTM213 Lowest-cost EDGE Single-Chip Solution for Mobile Internet Browsing & Messaging Main Features THE Infineon X-GOLD 213 is the first Single-Chip in 65nm CMOS technology that integrates Baseband, RF Transceiver, Power Management Unit	Original	PDF	X-GOLDTM213 X-GOLDTM101 X-GOLDTM213 ARM11nces. B153-H9150-G1-X-7600 NB08-1329 Infineon X-GOLD 213 xgold 213 infineon x-gold X-GOLD 208 INFINEON infineon baseband processor x-gold 208 X-GOLD 213 INFINEON xgold X-GOLD x-gold 213
S3C2450 Abstract: ARM926EJ s3c2450 S3C2443 s3c245 s3c2443 datasheet samsung bluetooth 13x13 65nm sources ARM9 400mhz S3C24X Text: Samsung S3C2450 Mobile Processor RICH FEATURE SET AT LESS COST FOR PERSONAL NAVIGATION DEVICES AND OTHER HANDHELDS The 65nm S3C2450 is the new generation of Samsung’s popular S3C24xx series, offering pin-to-pin compatibility along with a wealth of new features that were	Original	PDF	S3C2450 S3C2450 S3C24xx S3C245 10-ch 12-bit ROM/64KB 128-bit 400-pin ARM926EJ s3c2450 S3C2443 s3c2443 datasheet samsung bluetooth 13x13 65nm sources ARM9 400mhz S3C24X
CS200 Abstract: 65nm DDR PHY ASIC HDMI to lvttl cmos logic 90nm DAC 90nm CS200A 65-NM UHS SD Card Hdmi to micro usb wiring Text: 65nm CMOS Standard Cell Leakage Current Large CS200 ASIC Series Server/ Network Low Power Power Low Lineup Lineup CS200LL CS200A HV-Tr DHV-Tr HS-Tr Mo C Mobile STD-Tr STD-Tr LL-Tr Computing High End Server HighHigh Performance Performance Lineup LineupCS200HP	Original	PDF	CS200 CS200LL CS200A CS200HP CS200 12-layer 10-bit 33MS/s 1110MS/s 65nm DDR PHY ASIC HDMI to lvttl cmos logic 90nm DAC 90nm CS200A 65-NM UHS SD Card Hdmi to micro usb wiring
CS26LV64173 Abstract: No abstract text available Text: Low Power Pseudo SRAM 4 M Words x 16 bit CS26LV64173 Revision History Rev. No. 1.0 History Issue Date 1. New Release. Mar.27, 2013 2. Product Process change from 90nm to 65nm 3. The device build in Power Saving mode as below : 3-1. Deep Power Down DPD 3-2. Partial Array Refresh (PAR)	Original	PDF	CS26LV64173 CS26LV64173
X-GOLD 118 Abstract: xgold 118 ARM11 processor Infineon X-GOLD 116 X-GOLD x-goldtm ARM11 baseband block diagram of wireless gsm camera infineon x-gold gsm modem block diagram Text: Product Brief X-GOLDTM116 Ultra-low cost GSM/GPRS Single-Chip Solution for Messaging Phones Main Features THE Infineon X-GOLD 116 is the first Single-Chip in 65nm CMOS technology that integrates Baseband, RF Transceiver, Power Management Unit and FM Radio. After the successful market introduction of the 2nd generation	Original	PDF	X-GOLDTM116 X-GOLDTM101 X-GOLDTM116 ARM11ances. B153-H9348-X-X-7600 NB08-1333 X-GOLD 118 xgold 118 ARM11 processor Infineon X-GOLD 116 X-GOLD x-goldtm ARM11 baseband block diagram of wireless gsm camera infineon x-gold gsm modem block diagram
Untitled Abstract: No abstract text available Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous	Original	PDF	M18-90nm/65nm) 512-Mbit 16-bit
infineon x-gold Abstract: Infineon X-GOLD 113 ARM11 processor arm1176 block diagram of mp3 player digital with fm radio receiver X-GOLD x-gold 113 x-goldtm101 FM stereo wireless headset GSM transmitter receiver Text: Product Brief X-GOLDTM113 Ultra-low cost GSM/GPRS Single-Chip Solution for Music Phones Main Features THE Infineon X-GOLD 113 is the first Single-Chip in 65nm CMOS technology that integrates Baseband, RF Transceiver, Power Management Unit and FM Radio. After the successful market introduction of the 2nd generation	Original	PDF	X-GOLDTM113 X-GOLDTM101 X-GOLDTM113 ARM11 B153-H9151-G1-X-7600 NB08-1329 infineon x-gold Infineon X-GOLD 113 ARM11 processor arm1176 block diagram of mp3 player digital with fm radio receiver X-GOLD x-gold 113 x-goldtm101 FM stereo wireless headset GSM transmitter receiver
WP1F Abstract: No abstract text available Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous	Original	PDF	M18-90nm/65nm) 512-Mbit 16-bit x32SH x16SB x16/x32 8x10x1 PF48F3000M0Y0QE WP1F
PF38F4060M Abstract: PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901 Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous	Original	PDF	M18-90nm/65nm) 512-Mbit 16-bit 256-Kbyte PF38F4060M PF38F4060 PF48F3000M0Y0QE PF48F6000 2N 8904 PF556 IC TOP 8901
WP1F Abstract: BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C Text: Numonyx StrataFlash Cellular Memory M18-90nm/65nm Datasheet Product Features High-Performance Read, Program and Erase — 96 ns initial read access — 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output — 133 MHz with zero wait-state synchronous	Original	PDF	M18-90nm/65nm) 512-Mbit 16-bit 256-Kbyte x32SH x16SB x16/x32 8x10x1 WP1F BA8D11 PF38F4060 PF38F4060M PF48F6000M0Y1 8S19 L18 65nm PF48F3000M0Y0QE x16C
X-GOLD 110 Abstract: Infineon X-GOLD 110 XGOLD110 X-GOLDTM110 XMM1100 X-GOLD XMMTM1100 infineon x-gold eWLB-184 B153-H9349-X-X-7600 Text: Product Brief X-GOLDTM110 Ultra-Low Cost GSM/GPRS Single-Chip for Voice, SMS and basic Multimedia Main Features THE X-GOLD 110 brings the Infineon GSM single-chip ULC family to the next level of integration based on a 65nm technology node. X-GOLDTM110 is an ideal solution for ULC Music Phones supporting key features such as	Original	PDF	X-GOLDTM110 X-GOLDTM110 XMMTM1100 B153-H9349-X-X-7600 NB08-1340 X-GOLD 110 Infineon X-GOLD 110 XGOLD110 XMM1100 X-GOLD infineon x-gold eWLB-184 B153-H9349-X-X-7600

65nm sram Abstract: SRAM 1GHz 45nm Text: 08cj-B-09 低電圧SRAM技術 A 0.7V Ultra Low Voltage SRAM Technology 0.7V動作をサポートビット線分割技術 ◆従来より51%消費電力カット ◆SRAMセルの不良率を2桁以上改善 40.2mW Data destruction SRAM消費電力（mW）	Original	PDF	08cj-B-09 128cells/BL 16cells/BL ISSCC2008 495um2 4997m2 832mm2 322mm2 256kb 65nm sram SRAM 1GHz 45nm
Ba-5590 Abstract: uav design BA5590 uav design specification uav sensors radar dsp processor radar sensor specification SPACE POWER ELECTRONICS EP3C120 Altera PCMCIA Text: White Paper Addressing SWaP Challenges in Military Platforms With 65-nm FPGAs and Structured ASICs Introduction Now more than ever, size, weight, and power SWaP must be managed and reduced across virtually all military and aerospace applications to improve operational efficiency and logistics, increase mission life, and reduce the total cost	Original	PDF	65-nm Ba-5590 uav design BA5590 uav design specification uav sensors radar dsp processor radar sensor specification SPACE POWER ELECTRONICS EP3C120 Altera PCMCIA
R8A77860NBGV Abstract: sh7786 SH-7786 SH-4A ddr3 ram E10A-USB Renesas Technology Release automotive PCIE interface R8A77860 Text: FOR IMMEDIATE RELEASE PRESS CONTACT: Akiko Ishiyama Renesas Technology America, Inc. 408 382-7407 [email protected] Renesas Technology’s Upgraded SH7786 Dual-Core Processor for High-performance Multimedia Systems Delivers a Faster Data Transfer Rate using Less Power	Original	PDF	SH7786 65-nm 27Gbytes-per-second 32-bit IEEE-802 593-pin R8A77860NBGV SH-7786 SH-4A ddr3 ram E10A-USB Renesas Technology Release automotive PCIE interface R8A77860
CS200A Abstract: fujitsu transistor CS200 IEC61883 generic dvd player power supply wimax soc FCBGA728 Text: Winter 2006 The News on the Latest Semiconductor Technologies and Products from Fujitsu Microelectronics America, Inc. The Fujitsu WiMAX SoC Enjoys Strong Industry Acceptance Major broadband Wireless Access manufacturers are choosing the Fujitsu IEEE 802.16-2004	Original	PDF	CORP-NL-21143-1/2006 CS200A fujitsu transistor CS200 IEC61883 generic dvd player power supply wimax soc FCBGA728
SLB9635 Abstract: bcm5787 ecm-945gm rtl8101e it8888g alc888 EMB-9682 88E8053 ECM-3711 CS5536 Text: Applied w A p p l i e d C o m p u t i n g S o l u t i o n s • Embedded Computing • Long-life Motherboard • Computer-on-Module Series ECM-GM965 • Fanless Embedded System 3.5" Intel GME965 Core 2 Duo Micro Module • Multi-functional Touch Panel PC	Original	PDF	ECM-GM965 GME965 24-bit RTL8111B ECM-945GM 945GME SLB9635 bcm5787 ecm-945gm rtl8101e it8888g alc888 EMB-9682 88E8053 ECM-3711 CS5536
k225 Abstract: K-225 NiSi PCI-Express 2.0 CS-300H Text: High-Performance Semiconductor Manufacturing Services Engagement Models ASIC Fujitsu’s Mie Factory COT Library IP Design Wafer Process 300mm fabs PT Assembly FT Pure ASIC TGD* ASIC *Tested Good Die COT + Design Service COT w/ Pure COT IP Support ▼ Fujitsu	Original	PDF	300mm 10Gbps/lane) SMS-FS-21288-1/2008 k225 K-225 NiSi PCI-Express 2.0 CS-300H
BCM59035 Abstract: diagram circuit usb mp3 player with radio fm lcd Broadcom BCM21331 BCM21331 BCM2048 usb video player circuit diagram Broadcom WLAN transceiver bcm2133 echo mixer circuit diagram BCM2085 Text: BCM21331 Single-Chip 65-nm EDGE Baseband + RF + Multimedia SUMMARY OF BENEFITS FEATURES • • • Enables high-performance, low-cost EDGE/GPRS handset design General Characteristics • Single-chip, single-die, Class 33, 4-band, EDGE/GPRS baseband processor	Original	PDF	BCM21331 65-nm 480-Mbps 208-MHz 407-pin 21331-PB02-R BCM59035 diagram circuit usb mp3 player with radio fm lcd Broadcom BCM21331 BCM21331 BCM2048 usb video player circuit diagram Broadcom WLAN transceiver bcm2133 echo mixer circuit diagram BCM2085
Untitled Abstract: No abstract text available Text: BCM21331 SINGLE-CHIP 65-nm EDGE BASEBAND + RF + MULTIMEDIA SUMMARY OF BENEFITS FEATURES • • • • • Enables the highest performance yet lowest cost EDGE/GPRS handset design General characteristics • Single-chip, single-die, Class 33, 4-band, EDGE/GPRS baseband	Original	PDF	BCM21331 65-nm 480-Mbps 208-MHz 389-pin 21331-PB00-R
TAG 9344 Abstract: car Speed Sensor using RFID CS200 FUJITSU FRAM CAR HORN Specification CMOS image sensor fingerprint circuit wimax soc CS100 CS200A CS300 Text: 2005 Executive Briefing Fujitsu Microelectronics America, Inc Program Introduction Emi Igarashi Corporate Overview Kazuyuki Kawauchi Business Update Keith Horn Summary / Q&A Keith Horn 09/20/2005, Executive Briefing 2 Fujitsu Microelectronics America, Inc. 2005	Original	PDF	10GbE, IDB1394, TAG 9344 car Speed Sensor using RFID CS200 FUJITSU FRAM CAR HORN Specification CMOS image sensor fingerprint circuit wimax soc CS100 CS200A CS300
samsung t-dmb Abstract: S3C4F60 ALL TV TUNER samsung TV Diagrams samsung tv diagrams Samsung Receiver jtag samsung 300km samsung tv tuner SDIO 4-bit Text: Sam sung S 3 C 4 F6 0 The W o rld 's First 6 5 n m S in gle-C hip M o b ile T V C hannel D eco d er RF SoC Design Your Next Big "Killer App" Using This Single-chip, Multi-band, M ulti-standard M obile TV Receiver System-on-Chip SoC Product Brief The Samsung S3C4F60 is the w orld's first 65nm single-chip Mobile	OCR Scan	PDF	S3C4F60 samsung t-dmb ALL TV TUNER samsung TV Diagrams samsung tv diagrams Samsung Receiver jtag samsung 300km samsung tv tuner SDIO 4-bit

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65NM SRAM Search Results

65NM SRAM Result Highlights (5)

65NM SRAM Datasheets Context Search

Flip-chip 1.8V SRAM

180-nm CMOS standard cell library inverter

samsung S3C6410

Infineon X-GOLD 213

S3C2450

CS200

CS26LV64173

X-GOLD 118

Untitled

infineon x-gold

WP1F

PF38F4060M

WP1F

X-GOLD 110

65nm sram

Ba-5590

R8A77860NBGV

CS200A

SLB9635

k225

BCM59035

Untitled

TAG 9344

samsung t-dmb