249NQ150
Abstract: 249NQ 249NQ135 249NQ150R IRFP460 D-67 HALF PAK Module
Text: Bulletin PD-20721 rev. A 06/02 249NQ. R SERIES 240 Amp SCHOTTKY RECTIFIER D-67 Description/ Features Major Ratings and Characteristics Characteristics IF(AV) Rectangular 249NQ.(R) Units 240 A 135 to 150 V 20000 A 0.72 V - 55 to 175 °C waveform VRRM range
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PD-20721
249NQ.
240Apk,
12-Mar-07
249NQ150
249NQ
249NQ135
249NQ150R
IRFP460
D-67 HALF PAK Module
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129NQ
Abstract: 129NQ135 129NQ150 129NQ150R IRFP460 IRFP460 SWITCHING FREQUENCY
Text: Bulletin PD-20719 rev. A 03/01 129NQ. R SERIES 120 Amp SCHOTTKY RECTIFIER D-67 Major Ratings and Characteristics Characteristics IF(AV) Rectangular Description/Features 129NQ.(R) Units 120 A 135 to 150 V 10000 A 0.74 V - 55 to 175 °C waveform VRRM range
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PD-20719
129NQ.
120Apk,
IRFP460
FL40S02
129NQ
129NQ135
129NQ150
129NQ150R
IRFP460
IRFP460 SWITCHING FREQUENCY
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Untitled
Abstract: No abstract text available
Text: Bulletin PD-20721 rev. A 06/02 249NQ. R SERIES 240 Amp SCHOTTKY RECTIFIER D-67 Description/ Features Major Ratings and Characteristics Characteristics IF(AV) Rectangular 249NQ.(R) Units 240 A 135 to 150 V 20000 A 0.72 V - 55 to 175 °C waveform VRRM range
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PDF
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PD-20721
249NQ.
240Apk,
08-Mar-07
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249NQ
Abstract: 249NQ135 249NQ150 249NQ150R IRFP460 irfp
Text: Bulletin PD-20721 rev. A 06/02 249NQ. R SERIES 240 Amp SCHOTTKY RECTIFIER D-67 Description/ Features Major Ratings and Characteristics Characteristics IF(AV) Rectangular 249NQ.(R) Units 240 A 135 to 150 V 20000 A 0.72 V - 55 to 175 °C waveform VRRM range
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Original
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PDF
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PD-20721
249NQ.
240Apk,
249NQ
249NQ135
249NQ150
249NQ150R
IRFP460
irfp
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Untitled
Abstract: No abstract text available
Text: PT16820 OLED Driver IC • DESCRIPTION The PT16820 is a single-chip CMOS OLED driver/controller for organic light emitting diode dot passive matrix display systems. It consists of 256 segments and 136 commons. The PT16820 communicates with the host
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PT16820
PT16820
8080/6800-series
160mA
256x136x4x2
64-step
SEG255
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745 transistor
Abstract: TRANSISTOR C 1815 varistor 67 135 DIODE
Text: СПЕЦИФИКАЦИЯ components Varistors Features • Small size, large peak current and high energy Insulated coating with epoxy yellow . Element diameter with 5,7, 10, 14, 20 mm. With safety approval UL1449 (E191293) Applications • Transistor, diode, IС, thyristor or tnac semiconductor protection
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UL1449
E191293)
745 transistor
TRANSISTOR C 1815
varistor
67 135 DIODE
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Untitled
Abstract: No abstract text available
Text: BAQ133 / 134 / 135 VISHAY Vishay Semiconductors Small Signal Low Leakage Diodes Features • Silicon Planar Diodes • Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers 9612009 Mechanical Data
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BAQ133
OD-80)
BAQ134
BAQ135
BAQ133-GS18
BAQ133-GS08
BAQ134-GS18
BAQ134-GS08
BAQ135-GS18
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Untitled
Abstract: No abstract text available
Text: BAQ133 / 134 / 135 Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current Features • Silicon Planar Diodes • Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers
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BAQ133
OD-80)
BAQ134
BAQ135
BAQ133-GS18
BAQ133-GS08
BAQ134-GS18
BAQ134-GS08
BAQ135-GS18
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Untitled
Abstract: No abstract text available
Text: BAQ133 / 134 / 135 VISHAY Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current Features • Silicon Planar Diodes • Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers
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BAQ133
OD-80)
BAQ134
BAQ135
BAQ133-GS18
BAQ133-GS08
BAQ134-GS18
BAQ134-GS08
BAQ135-GS18
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Untitled
Abstract: No abstract text available
Text: BAQ133 / 134 / 135 Vishay Semiconductors Small Signal Switching Diodes, Low Leakage Current Features • Silicon Planar Diodes • Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers
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Original
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PDF
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BAQ133
OD-80)
BAQ134
BAQ135
BAQ133-GS18
BAQ133-GS08
BAQ134-GS18
BAQ134-GS08
BAQ135-GS18
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Untitled
Abstract: No abstract text available
Text: LASERS & MATERIAL PROCESSING I OPTICAL SYSTEMS I INDUSTRIAL METROLOGY I TRAFFIC SOLUTIONS I DEFENSE & CIVIL SYSTEMS Vertical Diode Laser Stacks cw, actively cooled, with collimation, 9xx nm JOLD-x-CAFN-xA Design 2104xxx26 210480326 3 submounts 210480426 (4 submounts)
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2104xxx26
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Untitled
Abstract: No abstract text available
Text: C4D40120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 54A* Z-Rec Rectifier Qc Features • • • • • = 198nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching
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C4D40120D
198nC*
O-247-3
O-24planted
C4D40120D
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Untitled
Abstract: No abstract text available
Text: C4D40120D VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 54A* Z-Rec Rectifier Qc Features • • • • • = 198nC* Package 1.2kV Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching
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C4D40120D
198nC*
O-247-3
O-24planted
C4D40120D
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syntron rectifier
Abstract: 2CL2FP SM3F HGUF10 WESTINGHOUSE RECTIFIERS ct 4a05 4a05 Syntron syntron diode 2CL106
Text: B D O O O N TH O T C R O EM P Y O VE Manufacturers of • ■ ■ ■ ■ CAN’T FIND WHAT YOU NEED? CALL US. CUSTOM DESIGN IS OUR SPECIALTY. HIGH VOLTAGE DIODES MOVS TVSS DEVICES SELENIUM SUPPRESSORS SILICON CARBIDE SUPPRESSORS ■ HIGH VOLTAGE HIGH CURRENT ASSEMBLIES
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75N1
Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH
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76N07-11
76N07-12
67N10
75N10
42N20
50N20
58N20
O-247
O-204
75N1
6n80
IXTM20N60
IRFP 260 M
ixfh
K 15N60
ixtn 44N50
KS 4400
204 3B
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SP126
Abstract: No abstract text available
Text: SURFACE MOUNT TRANSISTORS AND DIODES • A pioneer in Surface Mount products, Philips invented the SOT-23 industry standard SM package. Offering full expertise and innovation in Surface Mount technology, Philips has introduced the newest medium-power one-watt
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OT-23
OT-223
OT-89,
OT-143,
EIA-RS481A
IEC286-3
BB215
PB219
PZT2907A
SP126
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d2388
Abstract: D368S EUPEC D 648 S
Text: Fast rectifier diodes Type V rrm V eupec If r m s m A If s m d /i2dt 10 ms, 10 ms, t, max tvj max kA A2s • If a v m ^ c N°C 34D32T? 0000112 125 ■ upec V TO> rT Ihm R.hjc tv,= tvj max tvj = tyi max tyj = tVJ max 180°el sin. V mO = I f AVM ¡F tv j m ax
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34D3i?
000011a
d2388
D368S
EUPEC D 648 S
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d2388
Abstract: D67U D1201 D1401 431lf D368S EUPEC D1201 D1201S
Text: EUPEC Fast rectifier diodes Type If r m s m V rrm A V I f sm ’4^E 5 / i zdt • If a v m ^ c 34D3i?ci7 00D0112 122 ■ V TO rT = 10 ms, 10 ms, tv ,= tvj I v j max tv] max tv j max •vj m ax kA A2s V mQ A/°C Irm R.hjc = t VJ max = I fAVM d i p / d t = 50 A/nS
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OCR Scan
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PDF
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34032T?
D1201
D1401
d2388
D67U
431lf
D368S
EUPEC D1201
D1201S
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RADIOTRON
Abstract: GE SCR 1000 AMP ST-12 1 watt diode 15 Amp current 1000 volts metal diode Scans-0017344
Text: RADIOTRON 1K6 D U O -D IO D E PENTODE Filament Voltage Current Maximum Overall Lengtft Maximum Diameter Bulb Cap Mounting Position Coated 2.0 0 .1 2 d-c volts amp. 4-15/16" 1-9/16" ST-18 Small Metal Any Base Pin 1-Filament ♦ Pin 2-Plate „ Pin 3-Diode Plate r S
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ST-12
RADIOTRON
GE SCR 1000 AMP
1 watt diode
15 Amp current 1000 volts metal diode
Scans-0017344
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FZD18
Abstract: CB-197 BZW11-27B FZD10 FZD12 FZD15 FZD22 FZD27 FZD33 FZD39
Text: transient voltage suppressors «TRANSIL» diodes de protection «TRANSIL» Types Bidirec tional 1 ms expo. / FZD6V8 FZD8V2 FZD10 FZD12 FZD15 FZD18 FZD22 FZD27 FZD33 FZD39 FZD47 FZD56 FZD62 FZD68 FZD82 FZD100 FZD120 FZD150 FZD180 800 W PF8Z6V8 PF8Z8V2 PF8Z10
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OCR Scan
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PDF
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FZD10
FZD12
FZD15
FZD18
FZD22
FZD27
FZD33
FZD39
FZD47
FZD56
CB-197
BZW11-27B
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Untitled
Abstract: No abstract text available
Text: BAQ133.BAQ135 VtSHAY ▼ Vishay Telefunken Silicon Planar Diodes Features • Very low reverse current Applications Protection circuits, tim e delay circuits, peak fo llo w er circuits, logarithm ic am plifiers Absolute Maximum Ratings Tj = 2 5 °C P aram eter
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BAQ133.
BAQ135
BAQ133
BAQ135
D-74025
01-Apr-99
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abb bov 660
Abstract: BOD 1-04 Abb breakover diode BOV1000-S dsas16u ABB bod 1-11 dsas 5-0 dsas10u DSAS5U dsas
Text: A B B SEMI CONDUCTORS AG BOD • Breakover Diodes Version Type Ordering number Bestellnummer Num. de commande BOD 1-04 -05 -06 -07 -08 -09 -10 3 flE P V bo Ibo V V Tvj=25°C Ta =50°C mA A 400 500 600 700 800 900 1000 ± 50 <15 Iavm 1100 1200 1300 1400 1500
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PDF
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QDlb63Ã
01b63fl
000D0M2
abb bov 660
BOD 1-04
Abb breakover diode
BOV1000-S
dsas16u
ABB bod 1-11
dsas 5-0
dsas10u
DSAS5U
dsas
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BD400
Abstract: TD-429 1N3712 in3712 TD-427 TD-423 TD-437 TD-408 TD-401 TD-422
Text: TUNNEL DIODES MICROWAVE Cj :> Vp Vv Type’ Peak Current Typ. mA Peak Vo Itaiie Typ (mV) Valley Voltage Typ. (mV) V^ Forward Peak Voltage Typ. (mV) (Ip/lv) Peak to Valley Ratio Typ. —R Negative R e sista n ce Rs S e rie s R esista n ce Max. Junction C ap acitan ce
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PDF
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TD-401
TD-402
TD-403
O-404
TD-405
TD-406
TD-407
TD-408
TD-409
TD-411
BD400
TD-429
1N3712
in3712
TD-427
TD-423
TD-437
TD-422
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BZW11-1QB
Abstract: PFZ015 BZW04-188 BZW04-188B BZW04-202 BZW04-202B BZW04-376 BZW04-376B BZW04-5V5 BZW04-5V5B
Text: transient voltage suppressor «TRANSIL» utilisations utilisations des diodes de protection «TRANSIL» f\ t h o m s o n -c s f Recommended utilisations Utilisations recommandées Types General purpose Usage général Netw ork protection Protection pour réseau
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BZW04-5V5
BZW04-188
BZW04-202
BZW04-376
BZW04-5V5B
BZW04-188B
BZW04-202B
BZW04-376B
BZW06-5V5
BZW06-188
BZW11-1QB
PFZ015
BZW04-188
BZW04-188B
BZW04-202
BZW04-202B
BZW04-376
BZW04-376B
BZW04-5V5
BZW04-5V5B
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