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Vishay Intertechnologies RW68V471S73 RS-10-39 470 5% RW68V471 S73 - Tape and Reel (Alt: RW68V471S73)
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Avnet Americas	RW68V471S73	Reel		10 Weeks	500	1 - 10 - 100 - 1000 $0.91256 10000 $0.91256	Buy Now
Vishay Intertechnologies RW68V4R7B12 RS-10-39 4.7 5% RW68V4R7 B12 - Bulk (Alt: RW68V4R7B12)
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Avnet Americas	RW68V4R7B12	Bulk		10 Weeks	100	1 - 10 - 100 $2.1838 1000 $2.1838 10000 $2.1838	Buy Now
Vishay Intertechnologies RW68V450B12 RS-10-39 45 5% RW68V450 B12 - Bulk (Alt: RW68V450B12)
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Avnet Americas	RW68V450B12	Bulk		11 Weeks	100	1 - 10 - 100 $2.1838 1000 $2.1838 10000 $2.1838	Buy Now
Vishay Intertechnologies RW68V470S73 RS-10-39 47 5% RW68V470 S73 - Tape and Reel (Alt: RW68V470S73)
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Avnet Americas	RW68V470S73	Reel		10 Weeks	500	1 - 10 - 100 - 1000 $0.91256 10000 $0.91256	Buy Now
Vishay Intertechnologies RW68V4R7S73 RS-10-39 4.7 5% RW68V4R7 S73 - Tape and Reel (Alt: RW68V4R7S73)
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Avnet Americas	RW68V4R7S73	Reel		10 Weeks	500	1 - 10 - 100 - 1000 $0.91256 10000 $0.91256	Buy Now

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68V4 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
ATPA Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C	Original	PDF	CY2147-35C CY7C147-35C CY7C147-45C CY91L22-35C CY7C122-35C CY2147-45C CY7C148-35C CY7C148-25C+ ATPA 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Untitled Abstract: No abstract text available Text: Preliminary CMOS SRAM 68V4000BZ, KM68U4000BZ Family Document Title 512Kx8 Low Voltage & Low Power SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Remark Rev. 0.0 - 1′st edition - Package Dimension Finalized Feb. 4′th, 1997 Preliminary	Original	PDF	KM68V4000BZ, KM68U4000BZ 512Kx8 48-CSP 55/Typ.
EPM5128LC Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309 Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C	Original	PDF	CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY7C148-35C CY7C168A-45M CY7C168A-35M+ EPM5128LC IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
178M05 Abstract: RN4B RN3A marking 2GW RD3a RD2A marking 4GW marking "4gw" RD1A MARKING CODE RD3.A Text: 固定抵抗器 FIXED RESISTORS OPERATING TEMP. K55VJ155C 特長 FEATURES 1AV4B: Y電流雑音が小さく耐パルス性が高い Yマルチマウントに特に適している 1AV4B: YCurrent noise level is low, yet highly resistant to pulses. YEspecially suitable for high speed automated mounting.	Original	PDF	K55VJ155C 512M0 354M0 394M0 083M0 150M0 071M0 012M0 178M05 RN4B RN3A marking 2GW RD3a RD2A marking 4GW marking "4gw" RD1A MARKING CODE RD3.A
EPM5128LC Abstract: EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1 5962-8867812rx Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 5962-8753903LX 5962-8753902LX CY21L49-55C CY21L49-45C CY7C281 CY7C281A 5962-8863701LX 5962-8753902LX CY6116A-45C CY6116A-35C CY7C286 CY27H512 5962-8867003LX 5962-8867002LX CY6116A-55C CY6116A-45C	Original	PDF	5962-8753903LX 5962-8863701LX 5962-8867003LX 5962-8867809RX 5962-8867809XX 5962-8867810RX 5962-8867811RX 5962-8867812RX 5962-8871309RX 5962-8871310RX EPM5128LC EPM5128GC epm5064lc-1 EPM5128LC1 59628867809r 5962-8984106LX EPM5128GI 7C19945DMB EPM5130GC-1
Untitled Abstract: No abstract text available Text: Prelim inary CMOS SRAM KM 68V4002B/BL, KM 68V4002BI/BLI D o cu m e n t Title 512K x8 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory D raft Data R em ark R ev No.	OCR Scan	PDF	KM68V4002B/BL, KM68V4002BI/BLI
TSOP 2-44 Abstract: km68 Text: 68V4000AL / AL-L CMOS SRAM 5 12Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 70,100ns m ax. • Low power dissipation - S tandb y(C M O S ) : 180n W (M ax.) L Version : 5 4n W (M ax.) L-L Version -O p era tin g	OCR Scan	PDF	V4000AL 512Kx8 100ns 180nW 144mW/MHz KM68V4000ALG/ALG-L 525mii) KM68V4000ALT/ALT-L KM68V4000ALR/ALR-L KM68V4000AL/AL-L TSOP 2-44 km68
KM68V4000 Abstract: No abstract text available Text: 68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • • • • • • The Process Technology : 0.4 um CMOS Organization : 512K x 8 Power Supply Voltage : 3.3 +/- 0.3V * Low Data Retention Voltage : 2V Min	OCR Scan	PDF	KM68V4000A 512Kx8 32-SOP, 32-TSOP KM68V4000A KM68V4000
Untitled Abstract: No abstract text available Text: Preliminary CMOS SRAM 68V4002B/BL, 68V4002BI/BLI Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0	OCR Scan	PDF	KM68V4002B/BL, KM68V4002BI/BLI 512Kx8
23C1001 Abstract: KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000 Text: FUNCTION GUIDE MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM 1Mx1 KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 4Mbit— 4Mx1 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 KM 44C256CL-8 - KM44C256CSL-6 KM44C256CL-7 KM 44C256CL-8 — KM41C4000C-7 — KM41C4000C-8 KM41C4000C-5	OCR Scan	PDF	KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 256Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CL-7 44C256CL-8 KM44C256CSL-6 23C1001 KMM5334100 km 23c 4000B KMM5362003C KM681001-25 KM68V257 KM428V256 23c4001 4100C M681000
Untitled Abstract: No abstract text available Text: CMOS SRAM 68V4002B/BL, 68V4002BI/BLI Document Title 512Kx8 Bit High Speed Static RAM 3.3V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Jan. 1st, 1997 Design Target	OCR Scan	PDF	KM68V4002B/BL, KM68V4002BI/BLI 512Kx8 170mA 160mA 150mA 195mA 36-TSOP2-400F
Untitled Abstract: No abstract text available Text: Preliminary 68V4002A CMOS SRAM 5 12K x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns Max. The 68V4002A is a 4,194,304-bit high-speed Static • Low Power Dissipation Standby (TTL) Random A ccess M em ory organiza tion as 524,28 8	OCR Scan	PDF	KM68V4002A KM68V4002A-12 KM68V4002A-15 KM68V4002AJ: 36-SOJ-400 KM68V4002A 304-bit
Untitled Abstract: No abstract text available Text: 68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION >Process Technology : 0.4 um CMOS The >Organization : 512K x 8 SAMSUNG'S advanced CMOS process technology. 68V4000A family is fabricated by >Power Supply Voltage : 3.3 +/- 0.3V	OCR Scan	PDF	KM68V4000A 512Kx8 32-SOP, 32-TSOP KM68V4000AL KM68V4000AL-L
7191B Abstract: No abstract text available Text: CMOS smfñ 68V4000B, KM68U4000B Family 512Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 im CMOS • Organization: 512Kx8 • Power Supply Voltage 68V4000B Family: 3.3±0.3V KM68U4000B Family : 3 0±0.3V	OCR Scan	PDF	KM68V4000B, KM68U4000B 512Kx8 512Kx8 KM68V4000B 32-SOP, 32-TSQP2-400F/R KM68V40008 7191B

Untitled Abstract: No abstract text available Text: CMOS SRAM 68V4002B/BL, 68V4002BI/BLI D o c u m e n t Tiîi e 51 2 Kx 8 B i t High Speed Static RAM 3.3V Operat ing , R e v o l u t i o n a r y Pin out. Operat ed a t C o m m e r c i a l and I nd us tr ia l Te mp er a tu r e Range. Revision H istory RevNo.	OCR Scan	PDF	KM68V4002B/BL, KM68V4002BI/BLI 170mA 160mA 150mA 36-SO J-400 36-TSOP2-400F
Untitled Abstract: No abstract text available Text: KM 6 8 V 4 0 0 2 A CMOS SRAM o c u m ers 51 2 K x 8 B i t H i g h S p e e d S t a t i c R A M 3 . 3 V O p e r a t i n g , R e v o l u t i o n a r y P i n o u t . O p e ra te d at C o m m e r c i a l T e m p e r a t u r e R a n g e . e visio n H isto ry	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: 68V4000AL / AL-L CMOS SRAM 5 12Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e : 70,100ns max. • Low power dissipation - Standby(CMOS) : 180nW(Max.) L Version : 54nW (Max.) L-L Version -O p era ting : 144mW /MHz(Max.)	OCR Scan	PDF	KM68V4000AL 12Kx8 100ns 180nW 144mW KM68V4000ALG/ALG-L 525mil) 68V4000ALT/ALT-L KM68V4000ALR/ALR-L KM68V4000AL/AL-L
Untitled Abstract: No abstract text available Text: CMOS SRAM 68V4002B/BL, 68V4002BI/BLI Document Till 512Kx8 Bit High Speed Static RAM 3.3V Operating , Operated at Commercial and Industrial Temperature Range. y s gyffl g j 8 R ^pvi<«ion RevNo. aHs siQg,tn s r f j rv Tg History Draft Data Remark Rev. 0.0	OCR Scan	PDF	KM68V4002B/BL, KM68V4002BI/BLI 512Kx8 36-TSOP2-400F
KM68V4002A Abstract: D 1108 SRAM512KX8 C50E Text: Preliminary 68V4002A CMOS SRAM 5 12K x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12,1 5,20 ns M ax. T h e K M 68 V 4 0 02 A is a 4 ,1 9 4,30 4 -b it high-speed Static • Low Pow er Dissipation Standby : 5 0 mA	OCR Scan	PDF	KM68V4002A 512Kx KM68V4002A-12 180mA KM68V4002A-15 170mA KM68V4002A-20 160mA KM68V4002AJ: 36-SOJ-4QO KM68V4002A D 1108 SRAM512KX8 C50E
68U4000CL-L Abstract: No abstract text available Text: Preliminary CMOS SRAM 68V4000C. KM68U4000C Family Document T ills 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft January 13, 1998 Advance 0.1 Revisied June 12, 1998 Prelim inary	OCR Scan	PDF	KM68V4000C. KM68U4000C 512Kx8 68U4000C 85/100ns 70/85/100ns 68U4000CL-L
Untitled Abstract: No abstract text available Text: Preliminary 68V4000B, KM68U4000B Family CMOS SRAM 512Kx8 bit Low Pow er & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4pm CMOS T he K M 68V 4000B and K M 68U 4000B fam ily are • Organization : 512K x 8 fabricated by SAMSUNG’S advanced CM O S process	OCR Scan	PDF	KM68V4000B, KM68U4000B 512Kx8 KM68V4000B 32-SOP, 32-TSOP 4000B
cs 308 Abstract: KM68U4000A Text: KM68U4000A CMOS SRAM ELECTRONICS 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 512Kx 8 • Power Supply Voltage 68V4000A Family : 3.3 +/- 0.3V KM68U4000A Family : 3.0 +/- 0.3V	OCR Scan	PDF	KM68U4000A 512Kx8 512Kx KM68V4000A KM68U4000A 32-SOP, 32-TSOP cs 308
Untitled Abstract: No abstract text available Text: KM616V4000B, KM616U4000B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft June 28th 1996 Advance 0.1 Revise - Die name change ; A to B Septem ber 19th 1996	OCR Scan	PDF	KM616V4000B, KM616U4000B 256Kx16 10/45mA KM616V4000BI, KM616U4000BI 100ns KM616V4000B
Untitled Abstract: No abstract text available Text: Preliminary CMOS SRAM 68V4000BZ, KM68U4000BZ Family Document Title 512Kx8 Low Voltage & Low Power SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Rem ark Rev. 0.0 - 1 s t edition - Package Dimension Finalized Feb.4 th, 1997 Preliminary	OCR Scan	PDF	KM68V4000BZ, KM68U4000BZ 512Kx8 48-CSP 55/Typ. 32/Typ. 25/Typ.

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68V4 Price and Stock

Vishay Intertechnologies RW68V471S73

Vishay Intertechnologies RW68V4R7B12

Vishay Intertechnologies RW68V450B12

Vishay Intertechnologies RW68V470S73

Vishay Intertechnologies RW68V4R7S73

68V4 Datasheets Context Search

ATPA

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EPM5128LC

178M05

EPM5128LC

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TSOP 2-44

KM68V4000

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23C1001

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7191B

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KM68V4002A

68U4000CL-L

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cs 308

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