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6N60E Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E Text: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218	OCR Scan	PDF	O-247 O-218 340F-03 340B-03 O-247 6N100E 10N100E 6N60E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 16N40E
Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M TW 6N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 6N100E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 W ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS	OCR Scan	PDF	6N100E/D MTW6N100E 340K-01
6N100E Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TM O S E -FE T ™ P ow er Field E ffe c t T ran sisto r T O -2 4 7 W ith Is o la te d M ounting H ole TMOS POWER FET 6.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te rm in a tio n	OCR Scan	PDF
MTM13N50E Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E Text: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”	OCR Scan	PDF	BUZ10 BUZ11 BUZ11A BUZ11S2 BUZ15 BUZ171 BUZ20 BUZ21 BUZ23 BUZ31 MTM13N50E P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E