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    6E SOT23 Search Results

    6E SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    6E SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si2333dds

    Abstract: si2333dd SI2333DDS-T1-GE3
    Text: Si2333DDS Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) () Max. ID (A)a 0.028 at VGS = - 4.5 V - 6e 0.032 at VGS = - 3.7 V - 6e 0.040 at VGS = - 2.5 V - 6e 0.063 at VGS = - 1.8 V - 4.5 0.150 at VGS = - 1.5 V


    Original     		PDF Si2333DDS O-236 OT-23) Si2333DDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si2333dd

    Untitled

    Abstract: No abstract text available
    Text: Si2333DDS Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY VDS (V) - 12 RDS(on) () Max. ID (A)a 0.028 at VGS = - 4.5 V - 6e 0.032 at VGS = - 3.7 V - 6e 0.040 at VGS = - 2.5 V - 6e 0.063 at VGS = - 1.8 V - 4.5 0.150 at VGS = - 1.5 V


    Original     		PDF Si2333DDS O-236 OT-23) Si2333DDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    si2329

    Abstract: No abstract text available
    Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8


    Original     		PDF Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 11-Mar-11 si2329

    Untitled

    Abstract: No abstract text available
    Text: Si2399DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 10 V - 6e 0.045 at VGS = - 4.5 V - 6e 0.067 at VGS = - 2.5 V - 5.2 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si2399DS 2002/95/EC O-236 OT-23) Si2399DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    mar 835 mosfet

    Abstract: sot-23 MARKING CODE 41B Si2399 Si2399DS
    Text: Si2399DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 10 V - 6e 0.045 at VGS = - 4.5 V - 6e 0.067 at VGS = - 2.5 V - 5.2 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si2399DS 2002/95/EC O-236 OT-23) Si2399DS-T1-GE3 25trademarks 2011/65/EU 2002/95/EC. 2002/95/EC mar 835 mosfet sot-23 MARKING CODE 41B Si2399

    Untitled

    Abstract: No abstract text available
    Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8


    Original     		PDF Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SI2329DS-T1-GE3

    Abstract: No abstract text available
    Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8


    Original     		PDF Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    si2329

    Abstract: SI2329DS
    Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8


    Original     		PDF Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. si2329

    sot-23 MARKING CODE 41B

    Abstract: mar 835 mosfet Si2399 SI2399DS
    Text: Si2399DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 10 V - 6e 0.045 at VGS = - 4.5 V - 6e 0.067 at VGS = - 2.5 V - 5.2 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si2399DS 2002/95/EC O-236 OT-23) Si2399DS-T1-GE3 25hay 11-Mar-11 sot-23 MARKING CODE 41B mar 835 mosfet Si2399

    Untitled

    Abstract: No abstract text available
    Text: Si2399DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 10 V - 6e 0.045 at VGS = - 4.5 V - 6e 0.067 at VGS = - 2.5 V - 5.2 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si2399DS 2002/95/EC O-236 OT-23) Si2399DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    2N5460

    Abstract: 5461 2N5461 2N5462 CBVK741B019 MMBF5460 MMBF5461 PN2222N
    Text: 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G S G S TO-92 SOT-23 D Mark: 6E / 61U D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general


    Original     		PDF 2N5460 MMBF5460 MMBF5461 MMBF5460 2N5460 2N5461 2N5462 OT-23 5461 2N5461 2N5462 CBVK741B019 MMBF5461 PN2222N

    transistor 2N5461

    Abstract: 2n5462 2N5460 CONFIGURATION 2N5461 2N5461 CBVK741B019 F63TNR MMBF5460 MMBF5461 PN2222N
    Text: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


    Original     		PDF MMBF5460 MMBF5461 2N5460 2N5461 2N5462 OT-23 transistor 2N5461 2n5462 2N5460 CONFIGURATION 2N5461 2N5461 CBVK741B019 F63TNR MMBF5460 MMBF5461 PN2222N

    Untitled

    Abstract: No abstract text available
    Text: 2N5460 / 5461 / 5462 / MMBF5460 / MMBF5461 MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G S G S TO-92 SOT-23 D Mark: 6E / 61U D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general


    Original     		PDF 2N5460 MMBF5460 MMBF5461 2N5461 2N5462 OT-23

    Untitled

    Abstract: No abstract text available
    Text: G S G S TO-92 SOT-23 D Mark: 6E / 61U / 61V D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


    Original     		PDF OT-23

    transistor 2N5461

    Abstract: No abstract text available
    Text: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


    Original     		PDF 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 2N5462 transistor 2N5461

    BC817

    Abstract: BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package BC817 BC818 SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking BC817 = 6D BC817-16 = 6A BC817-25 = 6B BC817-40 = 6C BC818 = 6H BC818-16 = 6E


    Original     		PDF ISO/TS16949 OT-23 BC817 BC818 BC817-16 BC817-25 BC817-40 BC818-16 BC817 BC817 smd BC817 cdil bc818 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40

    2N5460

    Abstract: 7-segment+4+digit+5461
    Text: G S G S TO-92 SOT-23 D Mark: 6E / 61U / 61V D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


    Original     		PDF 2N5460 MMBF5460 MMBF5461 MMBF5462 2N5461 2N5462 7-segment+4+digit+5461

    MMBF5462

    Abstract: 2N5460 2N5461 2N5462 CBVK741B019 MMBF5460 MMBF5461 LA 5461
    Text: G S G S TO-92 SOT-23 D Mark: 6E / 61U / 61V D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


    Original     		PDF OT-23 MMBF5462 2N5460 2N5461 2N5462 CBVK741B019 MMBF5460 MMBF5461 LA 5461

    2N5461

    Abstract: 5461 AS MMBF5462 61V
    Text: G S G S TO-92 SOT-23 D Mark: 6E / 61U / 61V D NOTE: Source & Drain are interchangeable P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


    Original     		PDF 2N5460 MMBF5460 MMBF5461 MMBF5462 2N5461 2N5462 5461 AS MMBF5462 61V

    Si2323CDS

    Abstract: No abstract text available
    Text: Si2323CDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = - 4.5 V - 6e 0.050 at VGS = - 2.5 V - 5.8 0.063 at VGS = - 1.8 V - 5.1 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si2323CDS 2002/95/EC O-236 OT-23) Si2323CDS-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si2323CDS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.039 at VGS = - 4.5 V - 6e 0.050 at VGS = - 2.5 V - 5.8 0.063 at VGS = - 1.8 V - 5.1 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si2323CDS 2002/95/EC O-236 OT-23) Si2323CDS-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si2323CDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.039 at VGS = -4.5 V -6e 0.050 at VGS = -2.5 V -5.8 0.063 at VGS = -1.8 V -5.1 VDS (V) -20 Qg (Typ.) 9 nC APPLICATIONS • Load Switch • PA Switch


    Original     		PDF Si2323CDS O-236 OT-23) Si2323CDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTORS ISSUE 3 - JANUARY 1996 PAR TM AR KIN G DETAILS: C O M P L EM EN T A R Y TYPES: FMMTA92 FMMTA93 O_ - FMM TA92 FMM TA93 FMM TA92R FM M TA93R - 4E - 2E - 8E - 6E - FM M TA92 - FMM TA42 - FM M TA93 - FMMTA43


    OCR Scan     		PDF TA92R TA93R FMMTA92 FMMTA93 FMMTA43 -200V, -160V, -20mA, -10mA, -30mA

    2n5461

    Abstract: 2N5462 2N5461 equivalent 2N5460 Low noise audio amplifier MMBF5460 mmbf5461
    Text: S e m i c o n d u c t o r " MMBF5460 MMBF5461 2N5460 2N5461 2N5462 SOT-23 Mark: 6E /61U P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


    OCR Scan     		PDF 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 2N5462 2N5461 equivalent Low noise audio amplifier mmbf5461