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    6N60A Search Results

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    6N60A Price and Stock

    Vishay Siliconix IRFIB6N60APBF

    MOSFET N-CH 600V 5.5A TO220-3
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    DigiKey IRFIB6N60APBF Tube 791 1
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    Bristol Electronics IRFIB6N60APBF 400
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    Vishay Siliconix IRFIB6N60A

    MOSFET N-CH 600V 5.5A TO220-3
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    DigiKey IRFIB6N60A Tube 1,000
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    IXYS Corporation IXGH56N60A3

    IGBT 600V 150A 330W TO247
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    DigiKey IXGH56N60A3 Tube 30
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    IXYS Corporation IXGH36N60A3

    IGBT 600V 220W TO247
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    DigiKey IXGH36N60A3 Tube 30
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    Bristol Electronics IXGH36N60A3 20
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    IXYS Corporation IXGP36N60A3

    IGBT
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    DigiKey IXGP36N60A3 Tube 300
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    Mouser Electronics IXGP36N60A3
    • 1 $3.67
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    • 100 $2.46
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    TTI IXGP36N60A3 Tube 300
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    TME IXGP36N60A3 1
    • 1 $4.54
    • 10 $3.6
    • 100 $3.24
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    6N60A Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    6N60-ATA3-T Unisonic Technologies 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET Original PDF

    6N60A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET L6N60 „ DESCRIPTION The LRC L6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF L6N60 L6N60 L6N60L O-220

    6N-60

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 6N60L QW-R502-117 6N-60

    6n60a

    Abstract: 6n60b 6n60l 6n60 6N60G 6n60 data 6N60-B 6N60L TO-220F 6N60L TO-251
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF O-220 O-251 O-220F O-220F1 QW-R502-117 6n60a 6n60b 6n60l 6n60 6N60G 6n60 data 6N60-B 6N60L TO-220F 6N60L TO-251

    6n60a

    Abstract: 6n60b 6n60 MOSFET 6n60 power mosfet 6n60 6n60 data 6N60-B 6n60 equivalent 6N60L TO-220F MOSFET+6n60
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 6N60L 6N60G QW-R502-117 6n60a 6n60b 6n60 MOSFET 6n60 power mosfet 6n60 6n60 data 6N60-B 6n60 equivalent 6N60L TO-220F MOSFET+6n60

    8N65

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 產 品 變 更 通 知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices


    Original     		PDF IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65

    6n60a

    Abstract: 6n60b 6N60-B 6n60 6N60-A MOSFET 6n60 DSA0025594 6n60 MOSFEt 6n60 data power mosfet 6n60
    Text: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 6N60L QW-R502-117 6n60a 6n60b 6N60-B 6n60 6N60-A MOSFET 6n60 DSA0025594 6n60 MOSFEt 6n60 data power mosfet 6n60

    6n60a

    Abstract: IXTM6N60 6n60 600 volt n channel power mosfet
    Text: I X Y S CO RP löE D • 4L,abS2b O Q O D b l O 3 ■ IXTP6N60, IXTM6N60 □ IX Y S 6 AMPS, 600 V, 1.2S/1.5Q MAXIMUM RATINGS Parameter IXTP6N60 IXTM6N60 Sym. Drain-Source Voltage 1 Drain-Gale Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient


    OCR Scan     		PDF IXTP6N60 IXTM6N60 IXTP6N60, Drain-Sour420 O-204 O-220 O-247 6n60a 6n60 600 volt n channel power mosfet