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    KSA709

    Abstract: KSC1009
    Text: SAMSUNG SEMICONDUCTOR INC KSC1009 14E O | 7^4142 OQObf l bfl fl NPN EPITAXIAL SILICON TRANSISTOR T -29-23 HIGH VOLTAGE AMPLIFIER • • • • High Collector-Base Voltage Vceo=160V Collector Current lc =700inA Collector Dissipation P c =800mW Complement to KSA709


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    KSC1009 700inA 800mW KSA709 T-29-23 KSA709 PDF