702 sot23
Abstract: 1UW SOT 23 70.2 SOT23 ADG701 ADG701BRM ADG701BRT ADG702 ADG702BRM ADG702BRT 702 sot 23
Text: a CMOS 2V/3V/5V Low Ron Precision Switch Preliminary Technical Data ADG701/702 FEATURES +1.8V to +5.5V Single Supply 1Ω On Resistance Low On-Resistance Flatness Bandwidth 100MHz Rail to Rail Operation Very Low Distortion 6-lead SOT-23 8-lead µSOIC Packages
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ADG701/702
100MHz
OT-23
ADG701
ADG702
ADG701/702
702 sot23
1UW SOT 23
70.2 SOT23
ADG701
ADG701BRM
ADG701BRT
ADG702
ADG702BRM
ADG702BRT
702 sot 23
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702 sot23
Abstract: No abstract text available
Text: a CMOS 2V/3V/5V Low Ron Precision Switch Preliminary Technical Data ADG701/702 FEATURES +1.8V to +5.5V Single Supply 1Ω On Resistance Low On-Resistance Flatness Bandwidth 100MHz Rail to Rail Operation Very Low Distortion 6-lead SOT-23 8-lead µSOIC Packages
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100MHz
OT-23
ADG701/702
ADG701
ADG702
ADG701/702
702 sot23
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2N7002
Abstract: No abstract text available
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7002 ISSUE 4 – APRIL 2006 FEATURES * 60 Volt VCEO S D PARTMARKING DETAIL – 702 G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C
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2N7002
500mA
200mA
2N7002
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DSS SOT23
Abstract: 2N7002
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7002 ISSUE 3 – JANUARY 1996 FEATURES * 60 Volt VCEO S D PARTMARKING DETAIL – 702 G SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage V DS 60 V Continuous Drain Current at T amb=25°C
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2N7002
500mA
200mA
DSS SOT23
2N7002
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sot-23 MARKING CODE 70.2
Abstract: marking 702 sot-23 sot-23 marking 702 sot-23 702 2N7002 MARKING 2N7002 MARKING 702 2N7002 p-channel SOT-23 20V
Text: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* 702❋ 60V 7.5Ω 0.5A 2N7002 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
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2N7002
O-236AB:
O-236AB*
OT-23.
sot-23 MARKING CODE 70.2
marking 702 sot-23
sot-23 marking 702
sot-23 702
2N7002 MARKING
2N7002 MARKING 702
2N7002
p-channel SOT-23 20V
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2N7002
Abstract: 2N7002 MARKING 712
Text: 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) Order Number / Package Product marking for TO-236AB: TO-236AB* 702❋ 60V 7.5Ω 0.5A 2N7002 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
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2N7002
O-236AB:
O-236AB*
OT-23.
2N7002
2N7002 MARKING 712
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AA115 diode
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1 N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR
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L2N7002LT1
236AB)
L2N7002LT1â
AA115 diode
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RG 702 Diode
Abstract: 702 SOT-23 marking 702 MARKING CODE 702 702 marking code RG 702 L2N7002LT1 L2N7002LT1G SOT23-3 702
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1 N–Channel SOT–23 3 • Pb−Free Package is Available. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR
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L2N7002LT1
236AB)
L2N7002LT1
RG 702 Diode
702 SOT-23
marking 702
MARKING CODE 702
702 marking code
RG 702
L2N7002LT1G
SOT23-3 702
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sot 23 70.2
Abstract: L2N7002LT1G marking 702 sot23 702 sot 23 L2N7002LT1G SOT-23
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 2 • ESD Protected:1000V CASE 318, STYLE 21 SOT– 23 TO–236AB
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L2N7002LT1G
236AB)
OT-23
sot 23 70.2
L2N7002LT1G
marking 702 sot23
702 sot 23
L2N7002LT1G SOT-23
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G S-L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product are Halogen Free and compliance with RoHS requirements. 1 • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring
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L2N7002LT1G
S-L2N7002LT1G
236AB)
AEC-Q101
OT-23
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702 sot
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 60
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L2N7002LT1G
236AB)
195mm
150mm
3000PCS/Reel
8000PCS/Reel
OT-723
OD-723)
10Reel/Inner
702 sot
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts L2N7002LT1G N–Channel SOT–23 • 3 We declare that the material of product compliance with RoHS requirements. 1 • ESD Protected:1000V 2 CASE 318, STYLE 21 SOT– 23 TO–236AB MAXIMUM RATINGS
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L2N7002LT1G
236AB)
195mm
150mm
3000PCS/Reel
8000PCS/Reel
OT-723
OD-723)
10Reel/Inner
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MARKING GA
Abstract: A779 baw78c
Text: BAW 78 A BAW 78 D Silicon Switching Diodes Type BAW BAW BAW BAW 78 78 78 78 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package GA GB GC GD Q 62702-A675 Q 62 702-A 676 Q 62702-A677 Q 62 702-A 678 Q 62 70 2-A 77 8
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62702-A675
62702-A677
62702-A779
62702-A109
MARKING GA
A779
baw78c
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sot 23 70.2
Abstract: sot-23 MARKING CODE 70.2 SOT-23 Marking code MU sot23 702 sot-23 702 7002 SOT-23 sot-23 MARKING CODE GS 702 sot 23 diode marking code MU 702W
Text: 2N7002 inc. N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ b v dgs R dS<ON m ax) ' d(ON) (min) 60V 7 .5 0 0.5A Order Num ber / Package Product marking for SOT-23: SOT-23 702* 2N7002 w here * = 2-w eek alpha date code
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2N7002
OT-23
OT-23:
sot 23 70.2
sot-23 MARKING CODE 70.2
SOT-23 Marking code MU
sot23 702
sot-23 702
7002 SOT-23
sot-23 MARKING CODE GS
702 sot 23
diode marking code MU
702W
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2N5927
Abstract: H LB 120A 2N5927 JAN powertech PT-700 PT-702 pt100 temperature PT702 JANTX2N5927 114PKG
Text: 17E “BIG IDEAS IN BIG POWER" D • PowerTecn POIdERTECH INC T-33-is ISO AMPERES JAN T X 2 N 5 9 2 7 FT- 70Q PT- "702 SILICON NPN TRANSISTOR FEATURES: V CE sat . 0.75 V @70 A VBE. 1.5 V @70 A hF E .
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T-33-15
2N5927
JEDECT0-114PKG.
200mA,
100KHZ
H LB 120A
2N5927 JAN
powertech
PT-700
PT-702
pt100 temperature
PT702
JANTX2N5927
114PKG
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Untitled
Abstract: No abstract text available
Text: N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss/ R d S ON I d (ON) Order Number / Package Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* 702 * 60V 7.5Û 0.5A 2N7002 where * = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
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O-236AB*
2N7002
O-236AB:
OT-23.
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2N7002 MARKING 712
Abstract: 2N7002 800mA SOT-23 Marking code MU
Text: Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVoss / BVoos R d S<ON ' d ON) (max) (min) TO-236AB* 702* 60V 7.5Q 0.5A 2N7002 where * = 2-week alpha date code “Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
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2N7002
O-236AB*
O-236AB:
OT-23.
2N7002 MARKING 712
2N7002 800mA
SOT-23 Marking code MU
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transistor kt 801
Abstract: S/transistor kt 801 KT 802 transistor a05 801
Text: SAMSUNG S E MI CONDUCTOR INC MJE800/801/802/803 IME O | 7^4145 000770b NPN EPITAXIAL r - 33 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hpE—750 @ lc= —1.5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS TO-126 • Complementary to MJE700/701/702/703
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MJE800/801/802/803
000770b
O-126
MJE700/701/702/703
MJE800/801
MJE802/803
MJEo00/801
GQG77fe
transistor kt 801
S/transistor kt 801
KT 802
transistor a05 801
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Untitled
Abstract: No abstract text available
Text: Supertex inc. 2N7002 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v d ss/ b v dgs R dS ON (m ax) Id(ON) (m in) 60V 7.5Q. 0.5A O rd e r N um ber / Package Product marking for TO-236AB: TO-236AB* 702* 2N7002 where * = 2-week alpha date code
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OCR Scan
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2N7002
O-236AB:
O-236AB*
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sot 23 transistor 70.2
Abstract: LTA 702 N k/702 P transistor
Text: S A MS U N G SEMICONDUCTOR INC 14ÉD 1 7 ei b 4 : m 2 0007704 S NpN EPITAXIAL M JE700/701/702/703 SILICON DARLINGTON TRANSISTOR T ~ ? :r - 3 HIGH DC CURRENT GAIN MIN hFE—750 @ lc s - 1 .5 and -2 .0 A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS
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OCR Scan
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PDF
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JE700/701/702/703
MJE800/801/802/803
MJE700/701
MJE702/703
GQG77fe
sot 23 transistor 70.2
LTA 702 N
k/702 P transistor
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LTA 702 N
Abstract: LTA 702
Text: SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 FEATU RES * 60 Volt V CE0 P A R T M A R K IN G D E T A IL - 702 ABSOLUTE MAXIMUM RATINGS, PARAM ETER SYM BO L D ra in -S o u rce V o lta ge ^DS C o n tin u o u s D rain C u rren t at T <Jmb=25°C
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300jis.
LTA 702 N
LTA 702
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES CMOS Low Voltage 2 i l SPST Switches ADG701/ADG702 FEATURES +1.8 V to +5.5 V Single Supply 2 i l Typ On Resistance Low On-Resistance Flatness -3 dB Bandwidth >200 MHz Rail-to-Rail Operation 6-Lead SOT-23 8-Lead (jiSOIC Package Fast S w itching Times
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OCR Scan
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PDF
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ADG701/ADG702
OT-23
701/A
dissipati071
Sri037
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Untitled
Abstract: No abstract text available
Text: ANALOG DEVICES CMOS Low Voltage 2 i l SPST Switches ADG701/ADG702 FEATURES +1.8 V to +5.5 V Single Supply 2 i l Typ On Resistance Low On-Resistance Flatness -3 dB Bandwidth >200 MHz Rail-to-Rail Operation 6-Lead SOT-23 8-Lead (jiSOIC Package Fast Switching Times
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OCR Scan
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PDF
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ADG701/ADG702
OT-23
701/A
OT-23)
Sri037
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702 y sot 23
Abstract: la sot23-8 analog 701BR
Text: ANALOG DEVICES CMOS Low Voltage 2 i l SPST Switches ADG701/ADG702 FEATURES +1.8 V to +5.5 V Single Supply 2 i l Typ On Resistance Low On-Resistance Flatness -3 dB Bandwidth >200 MHz Rail-to-Rail Operation 6-Lead SOT-23 8-Lead (jiSOIC Package Fast S w itching Times
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OCR Scan
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OT-23
ADG701/ADG702
701/A
OT-23)
Sri037
702 y sot 23
la sot23-8 analog
701BR
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