APT70GR120J
Abstract: No abstract text available
Text: APT70GR120JD60 APT70GR120JD60 1200V, 70A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.
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APT70GR120JD60
APT70GR120JD60
E145592
APT70GR120J
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APT70GR120J
Abstract: No abstract text available
Text: APT70GR120J APT70GR120J 1200V, 70A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.
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APT70GR120J
APT70GR120J
E145592
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V544
Abstract: 70A 1200V IGBTS
Text: APT70GR120B2_L APT70GR120B2 APT70GR120L 1200V, 70A, Vce on = 2.5V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT® offers superior ruggedness and ultrafast switching speed.
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APT70GR120B2
APT70GR120L
V544
70A 1200V IGBTS
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SMCS6G060-120-1
Abstract: SMCS6G070-060-1 Analog tachometer driver 210C 2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM sensorless bdc motor speed control driving IC 5041
Text: SENSITRON SEMICONDUCTOR SMCS6G070-060-1 SMCS6G060-120-1 TECHNICAL DATA DATASHEET 5041, Preliminary Sensorless Brushless DC Motor Driver Module in a Power Flatpack 600V/70A, 1200V/60A DESCRIPTION: The SMCS6GXXX-XXX-1 is an, integrated three-phase brushless DC motor controller/driver subsystems
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SMCS6G070-060-1
SMCS6G060-120-1
00V/70A,
200V/60A
SMCS6G060-120-1
SMCS6G070-060-1
Analog tachometer driver
210C
2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM
sensorless bdc motor speed control
driving IC 5041
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SMC6G070-060-1
Abstract: diode s4 53a SMC6G060-120-1 IGBT 1500v 50A 210C bdc motor speed control igbt 1500V
Text: SENSITRON SEMICONDUCTOR SMC6G070-060-1 SMC6G060-120-1 TECHNICAL DATA DATASHEET 4246, REV D Brushless DC Motor Driver Module in a Power Flatpack 600V/70A, 1200V/60A DESCRIPTION: The SMC6GXXX-XXX-1 is an, integrated three-phase brushless DC motor controller/driver subsystems
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SMC6G070-060-1
SMC6G060-120-1
00V/70A,
200V/60A
SMC6G070-060-1
diode s4 53a
SMC6G060-120-1
IGBT 1500v 50A
210C
bdc motor speed control
igbt 1500V
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brushless motor 6236 driver
Abstract: SMCT6G070-060-1 SMCT6G060-120-1 RBE03010 lm 586 zener diode phc 47 RC servo motors "dc gain" transfer function time constant servo design bdc motor speed control zener diode phc 24 zener diode phc 16
Text: SENSITRON SEMICONDUCTOR SMCT6G070-060 SMCT6G060-120 TECHNICAL DATA DATA SHEET 5044, PRELIMINARY RELEASE TORQUE CONTROLLER BRUSHLESS DC MOTOR DRIVER MODULE 600V/70A, 1200V/60A FEATURES: • True Four Quadrant Complementary Switching. • Fully integrated 3-Phase Brushless DC Motor Control Subsystem includes power stage, non-isolated driver stage,
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SMCT6G070-060
SMCT6G060-120
00V/70A,
200V/60A
brushless motor 6236 driver
SMCT6G070-060-1
SMCT6G060-120-1
RBE03010
lm 586
zener diode phc 47
RC servo motors "dc gain" transfer function time constant servo design
bdc motor speed control
zener diode phc 24
zener diode phc 16
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transistor 12n60c
Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design
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ISOPLUS247TM
ISOPLUS247TM
PLUS247TM-package
FBO16-08N
FBE22-06N1
21-05QC
22-08N
75-01F
21-08i01
transistor 12n60c
12N60c equivalent
30N120D1
13N50 equivalent
12n60c
MOSFET 1200v 30a
MOSFET 1000v 30a
30n120d
CS20-22MOF1
12N60c MOSFET
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IC 7407
Abstract: IC 7407 datasheet DIODE 59 APT35GP120B2DF2 228F 70A 1200V IGBTS
Text: APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120B2DF2
IC 7407
IC 7407 datasheet
DIODE 59
APT35GP120B2DF2
228F
70A 1200V IGBTS
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IC AND GATE 7408
Abstract: IC 7408 7408 7408 ic datasheet ic 7408 datasheet 7408 datasheet 7408 ic data sheet IC 7408 APT30DF120 7408 and
Text: APT35GP120JDF2 1200V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120JDF2
IC AND GATE 7408
IC 7408
7408
7408 ic datasheet
ic 7408 datasheet
7408 datasheet
7408 ic
data sheet IC 7408
APT30DF120
7408 and
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Untitled
Abstract: No abstract text available
Text: FGL35N120FTD tm 1200V, 35A Trench IGBT Features General Description • Field Stop Trench Technology • High Speed Switching Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche
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FGL35N120FTD
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FGL35N120FTDTU
Abstract: FGL35N120FTD 16S-W c368w
Text: FGL35N120FTD tm 1200V, 35A Trench IGBT Features General Description • Field Stop Trench Technology Using advanced field stop trench technology, Fairchild’s 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche
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FGL35N120FTD
FGL35N120FTDTU
FGL35N120FTD
16S-W
c368w
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IC 7409
Abstract: APT35GP120J
Text: APT35GP120J 1200V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120J
IC 7409
APT35GP120J
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228F
Abstract: APT35GP120B T0-247
Text: APT35GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120B
O-247
228F
APT35GP120B
T0-247
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ic 7407
Abstract: 7407 APT35GP120B2DF2 IC 7407 datasheet 228F
Text: APT35GP120B2DF2 TYPICAL PERFORMANCE CURVES APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120B2DF2
ic 7407
7407
APT35GP120B2DF2
IC 7407 datasheet
228F
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Untitled
Abstract: No abstract text available
Text: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching
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IRG4PSH71UDPbF
40kHz
200kHz
Super-247
O-247
IRFPS37N50A
IRFPS37N50A
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IC AND GATE 7408
Abstract: data sheet IC 7408 7408 IC AND GATE 7408 specification sheet IC 7408 IC 7408 DATASHEET 7408 AND GATE datasheet 7408 datasheet APT35GP120JDF2 7408 AND gate ic
Text: TYPICAL PERFORMANCE CURVES APT35GP120JDF2 APT35GP120JDF2 1200V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120JDF2
IC AND GATE 7408
data sheet IC 7408
7408
IC AND GATE 7408 specification sheet
IC 7408
IC 7408 DATASHEET
7408 AND GATE datasheet
7408 datasheet
APT35GP120JDF2
7408 AND gate ic
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Untitled
Abstract: No abstract text available
Text: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter
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IRG4PSH71UD
40kHz
200kHz
Super-247
O-247
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transistor* igbt 70A 300 V
Abstract: 70A 1200V IGBTS Rectifier, 70A, 1000V Super-247 Package irg4psh71udp IRFPS37N50A diode 70A
Text: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching
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IRG4PSH71UDPbF
40kHz
200kHz
Super-247
O-247
IRFPS37N50A
IRFPS37N50A
transistor* igbt 70A 300 V
70A 1200V IGBTS
Rectifier, 70A, 1000V
Super-247 Package
irg4psh71udp
diode 70A
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APT35GP120B2DQ2G
Abstract: APT10035LLL APT35GP120B2DQ2
Text: APT35GP120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT35GP120B2DQ2 APT35GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT35GP120B2DQ2
APT35GP120B2DQ2
APT35GP120B2DQ2G*
APT35GP120B2DQ2G
APT10035LLL
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APT10035LLL
Abstract: APT35GP120JDQ2 sot-227 weight
Text: APT35GP120JDQ2 1200V TYPICAL PERFORMANCE CURVES APT35GP120JDQ2 ® C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
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APT35GP120JDQ2
E145592
APT10035LLL
APT35GP120JDQ2
sot-227 weight
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IRG4PSH71UD
Abstract: IRG4P IRF 547 MOSFET IRFPS37N50A MOSFET 1000V 140A TO274
Text: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter
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IRG4PSH71UD
40kHz
200kHz
Super-247
O-247
IRG4PSH71UD
IRG4P
IRF 547 MOSFET
IRFPS37N50A
MOSFET 1000V 140A
TO274
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Untitled
Abstract: No abstract text available
Text: APT35GP120JDQ2 1200V TYPICAL PERFORMANCE CURVES APT35GP120JDQ2 ® C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
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APT35GP120JDQ2
E145592
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Untitled
Abstract: No abstract text available
Text: APT35GP120B2DQ2 G 1200V TYPICAL PERFORMANCE CURVES APT35GP120B2DQ2 APT35GP120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® T-Max® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT35GP120B2DQ2
APT35GP120B2DQ2
APT35GP120B2DQ2G*
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10 AMP 1200V RECTIFIER DIODE
Abstract: 600V 25A Ultrafast Diode 1200v diode to247 ultrafast diode 10a 300v smps 450W ULTRA fast rectifier diode 30A 200V cathode common ULTRA fast rectifier diode 30A 200V anode common 1200v 30A to247 Diode C3 1200v 25A to247
Text: SML25EUZ06B Enhanced Ultrafast Recovery Diode 600 Volt, 25 Amp Back of Case Cathode TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 25EUZ06B diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with
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SML25EUZ06B
25EUZ06B
SML30SUZ03S
SML30SUZ03SC
SML30SUZ12B
SML30SUZ12BC
SML30SUZ12JD
SML30SUZ12S
SML30SUZ12TC
OT227
10 AMP 1200V RECTIFIER DIODE
600V 25A Ultrafast Diode
1200v diode to247
ultrafast diode 10a 300v
smps 450W
ULTRA fast rectifier diode 30A 200V cathode common
ULTRA fast rectifier diode 30A 200V anode common
1200v 30A to247
Diode C3
1200v 25A to247
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