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    buk657-500

    Abstract: BUK657-500B T0220AB transistor D 588
    Text: fc>5E T> PHILIPS INTERNATIONAL B VllDBEb 0Db432b =137 HIPHIN Philips Semiconductors Product Specification PowerMOS transistor BUK657-500B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


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    00b432b BUK657-500B T0220AB buk657-500 transistor D 588 PDF

    80c751

    Abstract: 1N24 CXA 1240 S87C751 80C51 83C751 87C751 8XC751 S87C751-1F24 S87C751-2F24
    Text: Philips Semiconductors Product specification CMOS single-chip 8-bit microcontrollers 83C751/87C751 DESCRIPTION The Philips 83C751/87C751 offers the advantages of the 80C51 architecture in a small package and at low cost. The 8XC751 Microcontroller is fabricated with Philips high-density


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    83C751/87C751 83C751/87C751 80C51 8XC751 83C751) 87C751) 16-bit 80c751 1N24 CXA 1240 S87C751 83C751 87C751 S87C751-1F24 S87C751-2F24 PDF

    ST0007

    Abstract: UV 471 80c51 user guide cmos 556 timer intel embedded microcontroller handbook XA-G2 80C51 T10E
    Text: INTEGRATED CIRCUITS Objective specification 1995 Aug 03 IC25 Data Handbook Philips Semiconductors 7i i o a a t n o i 2 ti?t, d e s PHILIPS Objective specification Philips Semiconductors CMOS single-chip 16-bit microcontroller FAMILY DESCRIPTION XA-G2 • Instruction set tailored for high level language support


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    711002t, 16-bit 80C51 ST0007 UV 471 80c51 user guide cmos 556 timer intel embedded microcontroller handbook XA-G2 T10E PDF

    SOT122A

    Abstract: 7Z78437
    Text: hSE 711DÖ2L □Qb3571 ÖSS BiPHIN T> PHILIPS BLY87C/01 IN TER NA TIO NA L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilita ry transmitters w ith a supply voltage o f 13,5 V. The transistor is resistance stabilized and is guaranteed to


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    Qb3571 BLY87C/01 SOT122A 7Z78437 PDF

    TDA8745H

    Abstract: SFE 10.7MJA SFE 7.02 MHz 10.7MS3 line AMPLIFIER satellite sfe 5,5 ma QFP44 SDIP42 TDA8740 TDA8741
    Text: Philips Semiconductors Preliminary specification Satellite sound receiver with l2C-bus control if ifp H S FEATURES TDA8745 - • On-chip frequency synthesizer and mixer: - tuning range 4 to 9.77 MHz - reference oscillator 4 MHz using a crystal or 4 MHz frequency source


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    TDA8745 7110a5t. TDA8745H SFE 10.7MJA SFE 7.02 MHz 10.7MS3 line AMPLIFIER satellite sfe 5,5 ma QFP44 SDIP42 TDA8740 TDA8741 PDF

    D-25CF

    Abstract: 3909
    Text: Philips Components Data sheet status Prelim inary specification date of issue M arch 1991 BUK 539-60A PowerMOS transistor Logic level FET PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.


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    39-60A 7110SEb 01i-state T-39-09 BUK539-60A 711DfiSb 0044b78 D-25CF 3909 PDF

    AF102

    Abstract: BAV18 diode 1BL BAV19 BAV20 BAV21 KAV21
    Text: SbE D • 711002b 00402b? 003 « P H I N BAV18 to 21 PHILIPS INTERNATIONAL 5bE » ^ ^ W P W iW m W W T -Ô W N 7 - IS GENERAL PURPOSE DIODES Silicon planar epitaxial diodes in DO-35 envelopes; intended for switching and general purposes in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television.


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    711002b 00402b? BAV18 DO-35 BAV19 BAV20 BAV21 GQ4Q274 AF102 diode 1BL KAV21 PDF

    Untitled

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL 41E D • ?110S2t DOSOSht t. W P H P h ilip s S e m ic o n d u c t o r s P ro d u c t s p e c ific a tio n High voltage optocouplers SL5582W/SL5583W FEATURES • A w ide body encapsulation with a pin distance of 1 0 .1 6 m m • An external cle ara n c e of 9 .6 mm


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    110S2t SL5582W/SL5583W PDF