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    BB112

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification AM variable capacitance diode BB112 FEATURES • Matched to 3% k • Leaded plastic package a_T' • C8.5: 23 pF; ratio: 21. -J a APPLICATIONS Fig.1 Simplified outline SOD69; TO-92 variant and symbol. • Electronic tuning in AM radio


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    BB112 BB112 711GfiSt PDF

    BUK101-50GS

    Abstract: buk101
    Text: PHILIPS I N T E R N A T I O N A L hSE D • 7 1 1 0 0 2 b DDb3Ö G Ö 5 3 e! « P H I N Philips Semiconductors Product Specification PowerMOS transistor TOPFET DESCRIPTION BUK101-50GS QUICK REFERENCE DATA Monolithic temperature and overload protected power M O SFE T


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    711Qfl2b BUK101-50GS lISL/lISL25JC BUK101-50GS buk101 PDF

    smd code marking sot23

    Abstract: O25 sot23 BBY42
    Text: P h ilip s S e m ic o n d u c to rs P ro d u c t s p e c ific a tio n VHF variable capacitance diode BBY42 FEATURES • Excellent linearity • Small plastic SMD package • C28: 2.7 pF; ratio: 14. APPLICATIONS • Electronic tuning in VHF television tuners, band B up to 460 MHz


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    BBY42 BBY42 7110flEb D53T4 smd code marking sot23 O25 sot23 PDF

    transistor 9567

    Abstract: 271 Ceramic Disc Capacitors 72741 i 72741 BLF521 IEC134 JLF521 9567 transistor
    Text: Philips Sem iconductors UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES 7- 3 1 - 0 7 ' 5bE ]> BLF521 7110â2Li D D M 3 ci3l4 70S • PHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


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    BLF521 OT172D OT172D transistor 9567 271 Ceramic Disc Capacitors 72741 i 72741 BLF521 IEC134 JLF521 9567 transistor PDF