bfs21
Abstract: BFS21A SOT-52 sot52 BF* N-Channel
Text: PHILIPS INTERNATIONAL 41E D m 711QflSb QOELEB11 ö BHPHIN BFS21 BFS21A T - 2 7 -2 5 ~ MATCHED N-CHANNEL FETS Matched pair of symmetrical n-channel silicon planar epitaxial junction field-effect transistors in TO-72 metal envelopes, mounted together in a metal S-clip.
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BFS21
BFS21A
T-27-2&
500mA
500fiA
BFS21A
SOT-52
sot52
BF* N-Channel
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D4MB
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL Data sheet status Preliminary specification date of issue March 1991 Sfc.E D • 711Qfl2b □ D4 Mb bti 17T « P H I N BUK 476-1000A/B PowerMOS transistor Replaces BUK446-1000A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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711Qfl2b
76-1000A/B
BUK446-1000A/B
BUK476
-1000A
-1000B
-SOT186A
T-39-09
BUK476-1000A/B
7110fi2b
D4MB
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J 3305-2
Abstract: NE604AN NE602 application NE604 Philips NE604AD SA604A SA604AN variable inductor Signetics NE602 SA604A equivalent
Text: R F COMMUNICATIONS PRODUCTS NE/SA604A High performance low power FM IF system Product specification December 1 5,1 9 94 IC17 Data Handbook Philips Semiconductors PHILIPS PHILIPS V 711Qfl2b □ □ f l l4S33 Printed From CAPS XPert Version 1,2P 73S This Material Copyrighted By Philips Semiconductors.
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NE/SA604A
711002b
14S33
853-0406C
J 3305-2
NE604AN
NE602 application
NE604 Philips
NE604AD
SA604A
SA604AN
variable inductor
Signetics NE602
SA604A equivalent
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ck3 ppc
Abstract: 80C51 83C504 87C504 exo 35j DSTRT
Text: • 711Qfl2b 0 0 b b 2 S 7 i m ■PHIN Philips Semiconductors Microcontroller Products Objective specification CMOS single-chip 8-bit microcontroller DESCRIPTION FEATURES The 83C504 and 87C504 hereafter referred to as 8XC504 Single-Chip 8-Bit Microcontroller is manufactured in an
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83C504/87C504
83C504
87C504
8XC504)
80C51
8XC504
80C51.
16-bit
ck3 ppc
87C504
exo 35j
DSTRT
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TDA1543A
Abstract: TDA1543 s6 general semiconductor
Text: P H I L IP S INTERNATIONAL SGE ]> Philips Sem iconductors • 711Qflat. Q D B E T T M 522 ■ PHIN TDA1543 A /S6 Data sheet status Product specification date of issue February 1991 T - s t - o r -te Dual 16-bit low-cost economy DAC (relaxed version of TDA1543A)
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711Dfl2b
TDA1543
16-bit
TDA1543A)
TDA1543A.
TDA1543A
s6 general semiconductor
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xl 3358
Abstract: function of tv deflection section KA025 tda9151 ic 2n35 data ttl D372 UKA039 gbs transistor RFT Semiconductors
Text: Philips S em iconductors O bjective specification Programmable deflection controller TDA9151 T - 7 7 - o r - u PH IL IP S INTERNATIONAL FEATURES 711Qfl2b 00 37 2 0 5 S b l 5bE D General • Current source output for high EMC immunity • 6.75,13.5 and 27 MHz clock
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TDA9151
T-77-or-w
16-bit
711002b
T-77-Ã
TDA9151
711005b
003730b
xl 3358
function of tv deflection section
KA025
ic 2n35 data ttl
D372
UKA039
gbs transistor
RFT Semiconductors
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TOKO RMC 2A6597H
Abstract: 2A6597H ICM4712701 RMC-2A6597H TOKO 455KHz ceramic filter SFG455 SFG455A3 TOKO 455KHz filter signetics rf Receiver Circuits signetics PLL
Text: SÖE D PH ILI PS INTERNATIONAL 711QflHb QQSQQbl 7H1 « P H I N Slgnetics RF Communications Preliminary specification Low-voltage high performance mixer FM IF system DESCRIPTION The NE/SA617 is a low voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting
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NE/SA617
NE/SA617
20-lead
NE617was
NE605.
711QflSb
TOKO RMC 2A6597H
2A6597H
ICM4712701
RMC-2A6597H
TOKO 455KHz ceramic filter
SFG455
SFG455A3
TOKO 455KHz filter
signetics rf Receiver Circuits
signetics PLL
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optocoupler pnp or npn
Abstract: PROXIMITY inductive ic HYBRID SEMICONDUCTORS metal detectors IC optocoupler pnp OM2860 OM3105N OM3105P OM3115N OM3115P
Text: 711QflEb 0 G 7 n ? l Philips Semiconductors STB » P H I N Preliminary specification Hybrid integrated circuits for inductive 7 . j* . * proximity detectors OM3105P FEATURES DESCRIPTION • Extra small dimensions 3 x 20 mm max. The OM3105P is a hybrid integrated circuit intended for
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711002t
OM3105P
OM2860
OM956/1
OM956/1
optocoupler pnp or npn
PROXIMITY inductive ic
HYBRID SEMICONDUCTORS
metal detectors IC
optocoupler pnp
OM3105N
OM3105P
OM3115N
OM3115P
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bc549 equivalent
Abstract: BC550 BC550 Philips BC550C equivalent BC550 equivalent BC549 BC549 philips semiconductors BC550C BC549B equivalent bc549c equivalent
Text: BC549 BC550 PHILIPS INT ER N AT I ONAL StE D • 711Qfl2t □ D4ED2ta 503 « P H I N SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, prim arily intended for low-noise input stages in tape recorders, hi-fi amplifiers and other audio-frequency equipment.
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BC549
BC550
711002b
bc550
T-29-21
bc549 equivalent
BC550 Philips
BC550C equivalent
BC550 equivalent
BC549 philips semiconductors
BC550C
BC549B equivalent
bc549c equivalent
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LUE2003S
Abstract: LUE2009S
Text: ^33'05 LUE2003S LUE2009S J^ PHILIPS INTERNATIONAL SbE ]> • 711Qfl5b 004fc,250 2S3 ■ PHIN MICROWAVE LINEAR POWER TRANSISTORS NPN silicon transistors for use in common-emitter class-A linear power amplifiers up to 4 GHz. Diffused emitter ballasting resistors, a self-aligned process entirely ion implanted and gold sandwich
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LUE2003S
LUE2009S
71lQfl2b
FO-163
LUE2003S
LUE2009S
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Untitled
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL bOE D • 711Qfl2b G0S700fi T42 IPHIN Philips Components LTA342 Data sheet status Product specification date of issue July 1990 Liquid Crystal Display DEVICE DESCRIPTION The LTA342 is a 24-character, 2-line dot matrix display. Typical applications include hand held equipment and
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711Qfl2b
G0S700fi
LTA342
LTA342
24-character,
83x18
7110fl2b
711Gfl2b
GOS7G12
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FET BFW61
Abstract: BFW61 v511 304 fet transistor N CHANNEL FET BFW61
Text: 711Qfl2b D0t7tiflM TS3 M P H I N BFW61 N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in aTO -72 metal envelope w ith the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers.
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7110fl2b
BFW61
aTO-72
FET BFW61
BFW61
v511
304 fet transistor
N CHANNEL FET BFW61
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FMCON
Abstract: EA28 80C51 P80CE528 P80CE528EBA P80CE528EBB P80CE528EFB P83CE528 P89CE528
Text: PHILIPS INTERNATIONAL bSE D B 711Qfl2b QDbl2b3 1S1 • P H I N Philips Semiconductors Preliminary specification 8-bit microcontroller with EMC and FEEPROM P8xCE528 CONTENTS 1 FEATURES 2 GENERAL DESCRIPTION 3 3.1 4 ELECTROMAGNETIC COMPATIBILITY EMC Recommendation on ALE
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711Qfl2b
P8xCE528
FMCON
EA28
80C51
P80CE528
P80CE528EBA
P80CE528EBB
P80CE528EFB
P83CE528
P89CE528
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DIODE T25 4 EO
Abstract: B44 transistor 711002b BUK456-60H T0220AB PHILIPS fw 373
Text: fc,SE i> PHILIPS INTERNATIONAL m 711Qfl2b QObMlll b4H « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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711002b
BUK456-60H
T0220AB
DIODE T25 4 EO
B44 transistor
BUK456-60H
T0220AB
PHILIPS fw 373
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Untitled
Abstract: No abstract text available
Text: SbE D • 711QflSb D ü m O b D fläM D E V E L O P M E N T DATA - T - l l ~Z3 BR211 SERIES This data sheet contains advance Information and specifications are subject to change without notice. PHILIPS INTERNATIONAL IPHIN 5bE D MIN BREAKOVER DIODES
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711QflSb
BR211
M3248
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BFQ295
Abstract: BFQ296
Text: Prelim inary specification Philips Sem iconductors PNP HDTV video transistor 7 ^ 3 3 PHILIPS INTERNATIONAL FEATURES 5bE D • BFQ295 711Qfl2b QDM5b?7 132 « P H I N PINNING DESCRIPTION PIN • High breakdown voltages • Low output capacitance 1 emitter •
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BFQ295
7110fl2b
QDM5b77
BFQ296.
BFQ295
OT128B
OT128B.
BFQ296
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transistor abe 438
Abstract: sti 7110 F103G marking 33a on semiconductor microwave transistor 03 npn power amplifier circuit NPN Silicon Epitaxial Planar Transistor MX1011B400W FO-91 TRANSISTOR package FO-91
Text: “7 — 3 3 -/5 ' Prelim inary specification Philips Sem iconductors NPN silicon planar epitaxial microwave power transistor PHILIPS INTERNATIONAL MX1011B400W 5bE J> 711Qfl2b 00Mb3b2 'ISb « P H I N FEATURES DESCRIPTION APPLICATIONS • Suitable for short and medium
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-T-33-AS'
MX1011B400W
711Qfl2b
00Mb3b2
us/10%
FO-91B
03GHz.
MCU133
711002b
transistor abe 438
sti 7110
F103G
marking 33a on semiconductor
microwave transistor 03
npn power amplifier circuit
NPN Silicon Epitaxial Planar Transistor
MX1011B400W
FO-91 TRANSISTOR package
FO-91
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JZ2 transistor
Abstract: 1S93 BUK454-500B T0220AB ADl40
Text: bSE J> PHILIPS INTERNATIONAL 711Qfl2b O O b H Q b l 2 ^ Philips Semiconductors BUK454-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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7110a2b
BUK454-500B
T0220AB
DS10N)
JZ2 transistor
1S93
ADl40
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on 614 power transistor
Abstract: transistor 614 100-P BUK445-400B
Text: PHILIPS INTERNATIONAL bSE ]> • 711Qfl2b □Qb40Dl 614 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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711Qfl2b
Qb40Dl
BUK445-400B
OT186
on 614 power transistor
transistor 614
100-P
BUK445-400B
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Octal latch open
Abstract: 74F605 N74F605D N74F605N
Text: PHILIPS INTERNATIONAL Document No. 853-0030 34E » H 711Qflab G O i a n ? Ô F A S J _ 7 4 F 0 0 5 <_ _ ECNNo. 07670 Date of issue September 20,1969 Status Product Specification T fLatch I I Dual Octal Latch Open Collector I m mm im ^ •■■ ■■■ mm mm mm mm mm mm mm
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00131e)
74F605
16-blt-wlde
28-Pin
N74F605N
N74F605D
74F605
Octal latch open
N74F605D
N74F605N
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BDT88
Abstract: BDT81 BDT82 BDT83 BDT84 BDT85 BDT86 BDT87
Text: BDT82; BDT84 BDT86; BDT88 PHILIPS INTERNATIONAL SbE D • 711Qfl2b 0043314 421 ■ PHIN T -3 1 -2 3 SILICON POWER TRANSISTORS P-N-P epitaxial base transistors in a T 0-22 0 plastic envelope, designed fo r use in audio o u tp u t stages and general am plifier and switching applications.
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BDT82;
BDT84
BDT86;
BDT88
T-31-23
T0-220
BDT81,
BDT83,
BDT85
BDT87.
BDT88
BDT81
BDT82
BDT83
BDT86
BDT87
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LM 9415
Abstract: Q0417
Text: OSB9415 SERIES OSM 9415 SERIES OSS 9415 SERIES MAINTENANCE TYPE PHILIPS INTERNATIONAL 5bE D 711QflBb 00H171D bS 5 • PHIN ■ 17 HIGH-VOLTAGE RECTIFIER STACKS Ranges o f high-voltage rectifier assemblies, incorporating controlled avalanche diodes mounted on
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OSB9415
7110flBb
00m710
TheOSB9415
OSM9415
OSS9415
8-32UNC)
LM 9415
Q0417
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors T -3 H 0 NPN 12 GHz wideband transistor crystal PHILIPS INTERNATIONAL 5bE D DESCRIPTIO N • X3A-BFQ33 711Qfl2b GDMbGTM 713 M EC H AN ICA L DATA NPN crystal used in BFQ33C SOT173 and BFG33 ( S O U 43). Crystals are supplied as whole wafer, fully
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X3A-BFQ33
711Qfl2b
BFQ33C
OT173)
BFG33
15nimum
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MGA034
Abstract: PCA8598F-2P PCD8598D-2P PCD8598D-2T PCF8598C-2P PCF8598C-2T PCF8598E-2P PCX8582X-2
Text: INTEGRATED CIRCUITS PCX8598X-2 Family 1024 x 8-bit CMOS EEPROMS with l2C-bus interface Product specification Supersedes data of April 1992 File under Integrated Circuits, IC12 •I 711Qfl2fc> OOflbSlU b bô ■ December 1994 Product specification Philips Semiconductors
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PCX8598X-2
7110fl2fc.
7110fl5b
MGA034
PCA8598F-2P
PCD8598D-2P
PCD8598D-2T
PCF8598C-2P
PCF8598C-2T
PCF8598E-2P
PCX8582X-2
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