7130A TRANSISTOR Search Results

7130A TRANSISTOR Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

7130A TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
7133A Abstract: 7130a 1 equivalent 7130A TRANSISTOR e2v ccd transistor 7135A CCD-Sensor for e2v transistor 7133A 7134C scientific imaging technologies 7132A Text: CCD30–11 Open Electrode High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Open Electrode Structure for Enhanced Quantum Efficiency	Original	CCD30 CCD30-11 CCD30-11, 7133A 7130a 1 equivalent 7130A TRANSISTOR e2v ccd transistor 7135A CCD-Sensor for e2v transistor 7133A 7134C scientific imaging technologies 7132A	PDF
e2v ccd Abstract: tdi ccd E2V 7407a NOT GATE 7406 IC Text: CCD30–11 Back Illuminated High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Back Illuminated Format for Enhanced Quantum Efficiency	Original	CCD30 CCD30-11 CCD30-11, e2v ccd tdi ccd E2V 7407a NOT GATE 7406 IC	PDF
transistor 7133A Abstract: tdi ccd E2V 7133A 7130a 1 equivalent 7130A TRANSISTOR ccd tdi binning TDI CCD 7133a 1 equivalent Text: CCD30-11 Inverted Mode Sensor High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Advanced Inverted Mode Operation AIMO * Anti-blooming Readout Register	Original	CCD30-11 transistor 7133A tdi ccd E2V 7133A 7130a 1 equivalent 7130A TRANSISTOR ccd tdi binning TDI CCD 7133a 1 equivalent	PDF
CCD30-11 Abstract: 7133A S11071 CCD30 M-2011 tdi ccd E2V transistor 7133A Text: CCD30–11 Open Electrode High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Wide Dynamic Range * Symmetrical Anti-static Gate Protection * Open Electrode Structure for Enhanced Quantum Efficiency	Original	CCD30 CCD30-11 7133A S11071 M-2011 tdi ccd E2V transistor 7133A	PDF
tdi ccd E2V Abstract: e2v ccd tdi ccd ccd tdi binning CCD30-11 7133A Scientific Imaging Technologies TDI ccd sensor Text: CCD30-11 Deep Depletion Sensor High Performance CCD Sensor FEATURES * 1024 by 256 Pixel Format * 26 mm Square Pixels * Image Area 26.6 x 6.7 mm * Deep Depletion for Enhanced Infrared Sensitivity * Symmetrical Anti-static Gate Protection * Anti-blooming Readout Register	Original	CCD30-11 CCD3011, tdi ccd E2V e2v ccd tdi ccd ccd tdi binning 7133A Scientific Imaging Technologies TDI ccd sensor	PDF
transistor c5578 Abstract: BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor Text: Asia / Pacific Belden Electronics Division Australia Hong Kong Shanghai 2200 U.S. Highway 27 South Richmond, IN 47374-7279 Phone: 765-983-5200 Fax: 765-983-5294 E-mail: [email protected] Web: www.belden.com Belden Australia Pty Ltd. 100 Olympia Street Tottenham, Victoria 3012	Original	MCAT-2003 transistor c5578 BELDEN 9116 DUOBOND(R) II 75 OHM SERIES 6 awm style 20233 7700A transformer Belden 138777 awm 2464 vw-1 300v shield cable specification transistor nec 8772 yokogawa DCS finder type 81.11 C5611 Transistor	PDF
triac zd 607 Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published	OCR Scan	thT404 ZV15A ZY33A ZT696 ZV15B ZY33B ZT697 ZT706 ZV27A ZY62A triac zd 607 hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p	PDF