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    Untitled

    Abstract: No abstract text available
    Text: AOC2800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOC2800 uses advanced trench technology to provide excellent RSS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.


    Original     		PDF AOC2800 AOC2800 716EF

    Untitled

    Abstract: No abstract text available
    Text: AOC2802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary The AOC2802 uses advanced trench technology to provide excellent RSS ON , low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.


    Original     		PDF AOC2802 AOC2802 716EF