v726
Abstract: 25c2625
Text: Preliminary Product Description SPA-2318 Stanford Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-2318
SPA-2318
IS-95
AN-029
EDS-101432
v726
25c2625
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SPA-1118 Stanford Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1118
SPA-1118
AN-029
EDS-101427
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SPA-2118 Stanford Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-2118
SPA-2118
IS-95
Powe45°
AN-029
EDS-102012
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ECB-101161
Abstract: No abstract text available
Text: Preliminary Product Description SPA-1218 Stanford Microdevices’ SPA-1218 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1218
SPA-1218
AN-029
EDS-101428
ECB-101161
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SPA-2118
Abstract: TRANSISTOR 726 transistor a 726 ECB-101161
Text: Preliminary Product Description SPA-2118 Stanford Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-2118
SPA-2118
IS-95
AN-029
EDS-102012
TRANSISTOR 726
transistor a 726
ECB-101161
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Xa3 TRANSISTOR
Abstract: matsuo
Text: Preliminary Product Description SXA-389 Sirenza Microdevices’ SXA-389 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMIC housed in low-cost surface-mountable plastic package. These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable
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SXA-389
SXA-389
016REF
118REF
041REF
EDS-102231
Xa3 TRANSISTOR
matsuo
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TRANSISTOR 726
Abstract: SPA-1118
Text: Preliminary Product Description SPA-1118 Stanford Microdevices’ SPA-1118 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1118
SPA-1118
Prod003
AN-029
EDS-101427
TRANSISTOR 726
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TL726
Abstract: SPA-2318 transistor a 726 RF TRANSISTOR 10 WATT 3825C SPA23
Text: Preliminary Product Description SPA-2318 Stanford Microdevices’ SPA-2318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-2318
SPA-2318
AN-029
EDS-101432
TL726
transistor a 726
RF TRANSISTOR 10 WATT
3825C
SPA23
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marking A45
Abstract: germanium transistor ac 128 SGA-4563 marking A45 RF TRANSISTOR 726
Text: Preliminary Preliminary Product Description SGA-4563 Stanford Microdevices SGA-4563 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.4V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-4563
SGA-4563
50-ohm
DC-2500
EDS-101803
marking A45
germanium transistor ac 128
marking A45 RF
TRANSISTOR 726
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SGA-7489
Abstract: TRANSISTOR 726 7489 DC-3000 MCH185A101JK a74 sot-89 EDS-101801 EDS 10180
Text: Preliminary Product Description Stanford Microdevices SGA-7489 is a high performance cascadeable 50-ohm amplifier designed for operation at 5 Volts DC. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to 50 GHz.
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SGA-7489
50-ohm
EDS-101801
DC-3000
SGA-7489
TRANSISTOR 726
7489
MCH185A101JK
a74 sot-89
EDS 10180
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SPA-1318
Abstract: No abstract text available
Text: Preliminary Product Description SPA-1318 Stanford Microdevices’ SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1318
SPA-1318
Consumpt003
AN-029
EDS-101429
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S1298
Abstract: 1318
Text: Preliminary Product Description SPA-1318 Stanford Microdevices SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial
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SPA-1318
SPA-1318
Active08
AN-029
EDS-101429
S1298
1318
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SGA-4286
Abstract: No abstract text available
Text: Product Description Stanford Microdevices SGA-4286 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current
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SGA-4286
DC-5000
SGA-4286
EDS-100639
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SGA-8343
Abstract: No abstract text available
Text: Preliminary Preliminary Product Description Stanford Microdevices’ SGA-8343 is a high performance SiGe HBT amplifier designed for operation from DC to 6 GHz. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process. The SGA-8343 is optimized
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SGA-8343
SGA-8343
GH049
EDS-101845
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TRANSISTOR A64
Abstract: RF TRANSISTOR 1.5 GHZ A64 MMIC A64 marking SGA-6486 A64 marking amplifier marking A64 amplifier
Text: Product Description Stanford Microdevices SGA-6486 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-6486
SGA-6486
DC-4500
EDS-100615
TRANSISTOR A64
RF TRANSISTOR 1.5 GHZ A64
MMIC A64 marking
A64 marking amplifier
marking A64 amplifier
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A6331
Abstract: No abstract text available
Text: Product Description Stanford Microdevices SGA-6389 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-6389
SGA-6389
DC-4500
EDS-100620
A6331
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TRANSISTOR MARKING A41
Abstract: SGA-4186 34a41
Text: Product Description Stanford Microdevices SGA-4186 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current
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SGA-4186
SGA-4186
EDS-100637
TRANSISTOR MARKING A41
34a41
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4463 B
Abstract: TRANSISTOR A44 "Bipolar Transistor" A44 A44 marking amplifier SGA-4463 pin configuration transistor A44 ZL 15 a
Text: Product Description Stanford Microdevices SGA-4463 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-4463
DC-3500
SGA-4463
EDS-100644
4463 B
TRANSISTOR A44
"Bipolar Transistor" A44
A44 marking amplifier
pin configuration transistor A44
ZL 15 a
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TRANSISTOR A63
Abstract: 5894 A63 marking amplifier DC-3000 SGA-6386
Text: Product Description Stanford Microdevices SGA-6386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-6386
SGA-6386
DC-3000
EDS-100614
TRANSISTOR A63
5894
A63 marking amplifier
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TRANSISTOR A63
Abstract: EDS-100620 SGA-6389 a63 TRANSISTOR
Text: Product Description Stanford Microdevices SGA-6389 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases
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SGA-6389
SGA-6389
DC-4000
EDS-100620
TRANSISTOR A63
a63 TRANSISTOR
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TRANSISTOR a43
Abstract: SGA-4386
Text: Product Description Stanford Microdevices SGA-4386 is a high performance SiGe Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high FT and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current
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SGA-4386
DC-4500
SGA-4386
EDS-100641
TRANSISTOR a43
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pwm lm358 mosfet
Abstract: LM324 TO 220 Package High current N CHANNEL MOSFET 200 Amp n channel mosfet circuit diagram of OP amp based circuits
Text: P W R - N C H 4 0 1 -r-w -s i» 4-Channel MOSFET Array 400 V - 335 mA per channel POWER INTEGRATIONS INC 37E D • POWER INTEGRATIONS, INC. 726^25^ GOQOOTS 5 * P I N Product Highlights 150 V 4 open-drain N-channel MOSFETs per package • 200, 300, and 400 V versions
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OCR Scan
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PWR-NCH401PUC1
PWR-NCH401PUC2
PWR-NCH401PUC3
24-PIN
OT070°
OT0700C
PWR-NCH401
pwm lm358 mosfet
LM324
TO 220 Package High current N CHANNEL MOSFET
200 Amp n channel mosfet
circuit diagram of OP amp based circuits
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PMB4220
Abstract: pmb4420 PMB 4420 Siemens pmb 4420 transistor smd marking gk 5-PIN MARKING PAX PMB4819 smd diode marking KC L50Q 4819
Text: tM I fl s ?l s s if 3 No. SI IC PMB4819 CODE NO. ^ 7| fl- S s| g Siemens LTD. Seoul 726,Yeoksam-dong,Kangnam-gu Seoul.C.P.O Box 3001,Korea Tel: 5277-700 Fax: 5277-779 SIEMENS ICs for Communications Power Amplifier for DECT Application PMB 4819 Version 1.0
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PMB4819
100nF
100nF
PMB4819
PMB4220
pmb4420
PMB 4420
Siemens pmb 4420
transistor smd marking gk
5-PIN MARKING PAX
smd diode marking KC
L50Q
4819
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TIP42A equivalent
Abstract: TIP42 texas TIP42 ST TIP42A TEXAS Schematic/TIP42
Text: TË TEXAS INSTR -COPTO} •89ei 726 flTblTSb DD3bûlb 4 ~] I k X Â S 'T N S T ïT O P T O > 62C 3 6 8 1 6 TIP42, TIP42A, TIP42B, TIP42C, TIP42D, TIP42E, TIP42F P-N-P SILICON POWER TRANSISTORS REVISED OCTOBER 1 9 8 4 T * 3 3 ~ 2- / Designed for Complimentary Use With TIP41 Series
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TIP42,
TIP42A,
TIP42B,
TIP42C,
TIP42D,
TIP42E,
TIP42F
TIP41
O-22QAB
TIP42
TIP42A equivalent
TIP42 texas
TIP42 ST
TIP42A TEXAS
Schematic/TIP42
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