SLVS 200
Abstract: MAX1434 MAX1436 MAX1436B MAX1436BECQ-D MAX1437 MAX1438
Text: 19-0523; Rev 0; 3/06 KIT ATION EVALU E L B AVAILA Octal, 12-Bit, 40Msps, 1.8V ADC with Serial LVDS Outputs Features The MAX1436B octal, 12-bit analog-to-digital converter ADC features fully differential inputs, a pipelined architecture, and digital error correction incorporating a
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12-Bit,
40Msps,
MAX1436B
12-bit
743mW
MAX1436B
SLVS 200
MAX1434
MAX1436
MAX1436BECQ-D
MAX1437
MAX1438
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4270d
Abstract: Hitachi DSA00164
Text: HM514170D, HM514270D Series HM51S4170D, HM51S4270D Series 262,144-word x 16-bit Dynamic RAM ADE-203-672A Z Rev. 1.0 Jul. 10, 1997 Description The Hitachi HM51(S)4170D Series, HM51(S)4270D Series are CMOS dynamic RAM organized as 262,144-word × 16-bit. HM51(S)4170D Series, HM51(S)4270D Series have realized higher density, higher
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HM514170D,
HM514270D
HM51S4170D,
HM51S4270D
144-word
16-bit
ADE-203-672A
4170D
4270D
Hitachi DSA00164
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SLVS 200
Abstract: MAX1436EVKIT
Text: 19-3646; Rev 0; 4/05 KIT ATION EVALU E L B A IL AVA Octal, 12-Bit, 40Msps, 1.8V ADC with Serial LVDS Outputs The MAX1436 octal, 12-bit analog-to-digital converter ADC features fully differential inputs, a pipelined architecture, and digital error correction incorporating a
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12-Bit,
40Msps,
96dBc
100-Pin
MAX1436EVKIT)
MAX1436
MAX1436EC
14x14x1
21-0116D
SLVS 200
MAX1436EVKIT
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Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)
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P4C187/P4C187L
P4C187
P4C187L
P4C187L
22-Pin
24-Pin
290x490
28-Pin
350x550
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power off delay timer circuit diagram
Abstract: PI2122
Text: PI2122 Cool-ORing Series 12Amp Active ORing Solution With Load Disconnect Description Features The Cool-ORing PI2122 is a complete full-function Active ORing solution with a high-speed ORing MOSFET controller and a very low on-state resistance Dual MOSFETs designed for use in
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PI2122
12Amp
PI2122
power off delay timer circuit diagram
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Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)
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P4C187/P4C187L
P4C187L)
22-Pin
24-Pin
290x490
28-Pin
350x550
P4C187/P4C187L
536-bit
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MMCX connector schematic
Abstract: circuit diagram of 4 channel long range RF based frequency hopping spread spectrum S467AH-915S AC4424 AC4486 AC4490 AC4490-1X1
Text: AC4490 900 MHz OEM TRANSCEIVERS Specifications Subject to Change User’s Manual Version 2.3 11160 THOMPSON AVENUE LENEXA, KS 66219 800 492-2320 www.aerocomm.com [email protected] DOCUMENT INFORMATION Copyright Information Copyright 2005 AEROCOMM, Inc. All rights reserved.
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AC4490
CS51413
1/16W,
3300pF,
100uF,
B230/A,
LL4148,
CS51413,
RK73H1JT2100F
MMCX connector schematic
circuit diagram of 4 channel long range RF based
frequency hopping spread spectrum
S467AH-915S
AC4424
AC4486
AC4490
AC4490-1X1
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MSM5118160
Abstract: SOJ42
Text: J2G0152-29-41 作成：1999年 4月 MSM5118160D/DSL l 前回作成：1998年10月 ¡ 電子デバイス MSM5118160D/DSL 1,048,576-Wordx16-Bit DYNAMIC RAM：高速ページモード n 概要 MSM5118160D/DSLはCMOSプロセス技術を用いた1,048,576ワ−ド×16ビット構成のダイナミックラン
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J2G0152-29-41
MSM5118160D/DSL
MSM5118160D/DSL
576-Word
16-Bit
MSM5118160D/DSLCMOS1
42CMOS
42SOJ50/44TSOP
02416ms1
024128msSL
MSM5118160
SOJ42
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22-PIN
Abstract: P4C187 P4C187L
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial)
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P4C187/P4C187L
P4C187L
P4C187
22-Pin
24-Pin
290x490
28-P400
SRAM111
P4C187
P4C187L
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24-Pin Plastic DIP
Abstract: smd code WZ P4C187 P4C187L
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)
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P4C187/P4C187L
P4C187L
P4C187
P4C187L
22-Pin
24-Pin
290x490
-12JI
-15PC
24-Pin Plastic DIP
smd code WZ
P4C187
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Untitled
Abstract: No abstract text available
Text: 19-0523; Rev 1; 2/11 KIT ATION EVALU E L B A AVAIL Octal, 12-Bit, 40Msps, 1.8V ADC with Serial LVDS Outputs Features The MAX1436B octal, 12-bit analog-to-digital converter ADC features fully differential inputs, a pipelined architecture, and digital error correction incorporating a
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12-Bit,
40Msps,
MAX1436B
12-bit
743mW
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Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)
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P4C187/P4C187L
P4C187
P4C187L
P4C187L
22-Pin
24-Pin
290x490
28-Pin
350x550
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SLVS 400
Abstract: No abstract text available
Text: 19-0523; Rev 1; 2/11 KIT ATION EVALU E L B A AVAIL Octal, 12-Bit, 40Msps, 1.8V ADC with Serial LVDS Outputs Features The MAX1436B octal, 12-bit analog-to-digital converter ADC features fully differential inputs, a pipelined architecture, and digital error correction incorporating a
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12-Bit,
40Msps,
MAX1436B
12-bit
743mW
SLVS 400
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MSM5118165F
Abstract: No abstract text available
Text: FEDD5118165F-02 Issue Date: Mar. 23, 2010 MSM5118165F 1,048,576-Word 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5118165F is a 1,048,576-word 16-bit dynamic RAM fabricated in LAPIS Semiconductor’s silicon-gate CMOS technology. The MSM5118165F achieves high integration, high-speed operation,
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FEDD5118165F-02
MSM5118165F
576-Word
16-Bit
MSM5118165F
42-pin
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P4C187
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Three-State Output High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45 ns (Commercial) – 12/15/20/25/35 /45 ns (Industrial) – 15/20/25/35/45/55/70/85 ns (Military)
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P4C187/P4C187L
P4C187L)
22-Pin
24-Pin
290x490
28-Pin
350x550
P4C187/P4C187L
536-bit
P4C187
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MAX1436EVKIT
Abstract: MAX1434 MAX1436 MAX1437 MAX1438 SLVS 200 SLVS 400
Text: 19-3646; Rev 0; 4/05 KIT ATION EVALU E L B A IL AVA Octal, 12-Bit, 40Msps, 1.8V ADC with Serial LVDS Outputs The MAX1436 octal, 12-bit analog-to-digital converter ADC features fully differential inputs, a pipelined architecture, and digital error correction incorporating a
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12-Bit,
40Msps,
MAX1436
12-bit
743mW
C100E-2.
MAX1436
MAX1436EVKIT
MAX1434
MAX1437
MAX1438
SLVS 200
SLVS 400
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AC4790
Abstract: MMCX connector schematic AC4790-1x1 AC4790-200M kql-ac4490 mw RADIO RECEIVER IC Nearson old radio diagram S467AH-915S Johnson Components 135-3711-822
Text: AC4790 900 MHz OEM TRANSCEIVERS Specifications Subject to Change User’s Manual Version 1.3 11160 THOMPSON AVENUE LENEXA, KS 66219 800 492-2320 www.aerocomm.com [email protected] 1 DOCUMENT INFORMATION Copyright Information Copyright 2006 AEROCOMM, Inc. All rights reserved.
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AC4790
AC4790
MMCX connector schematic
AC4790-1x1
AC4790-200M
kql-ac4490
mw RADIO RECEIVER IC
Nearson
old radio diagram
S467AH-915S
Johnson Components 135-3711-822
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SOJ42
Abstract: MSM5118165D sl130
Text: J2G0151-18-X2 作成：1998年10月 ¡ 電子デバイス MSM5118165D/DSL l MSM5118165D/DSL 1,048,576-Wordx16-Bit DYNAMIC RAM：EDO機能付き高速ページモード n 概要 MSM5118165D/DSLはCMOSプロセス技術を用いた1,048,576ワ−ド×16ビット構成のダイナミックラン
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J2G0151-18-X2
MSM5118165D/DSL
MSM5118165D/DSL
576-Word
16-Bit
MSM5118165D/DSLCMOS1
42CMOS
42SOJ50/44TSOP
02416ms1
024128msSL
SOJ42
MSM5118165D
sl130
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MSM5118160F
Abstract: SOJ42-P-400-1
Text: FEDD5118160F-01 1Semiconductor MSM5118160F This version: August. 2000 Previous version : 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5118160F is a 1,048,576-word × 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS
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FEDD5118160F-01
MSM5118160F
576-Word
16-Bit
MSM5118160F
42-pin
SOJ42-P-400-1
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 4 4 1 9 A J , T P , R T - 6 , - 7 , - 8 , - 6 S , - 7 S , - 8 S FAST PAGE MODE 4718592-BIT 262144-WORD BY 18-BIT DYNAMIC RAM DESCRIPTION This is a family of 2 6 2 1 4 4 -word by 18-bit dynamic RAMS, fabricated with the high performance CMOS process, and is
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4718592-BIT
262144-WORD
18-BIT
M5M44190AJ
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Untitled
Abstract: No abstract text available
Text: b E 4 tì fl ES 0G23bTì IMA • H IT 1 MITSUBISHILSIs M 5 M 4 4 1 9 0 A J ,T P ,R T - 6 ,-7 ,-8 ,-6 S ,- 7 S ,- 8 S FAST PAGE MODE 4718592-BIT 262144-WORD BY 18-BIT DYNAMIC RAM DESCRIPTION This is a family of 262144-word by 18-bit dynamic RAMS, fabricated with the high performance CMOS process, and is
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0G23bTÃ
4718592-BIT
262144-WORD
18-BIT
G0S37ES
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schottky CST
Abstract: tc5117805
Text: TOSHIBA TC5117805CJ/CFT/CST-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2,097,152-WORD BY 8-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117805CJ/CFT/CST is an EDO (hyper page) dynamic RAM organized as 2,097,152 words by 8 bits.
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TC5117805CJ/CFT/CST-50
152-WORD
TC5117805CJ/CFT/CST
28-pin
TC5117805CJ/CFT/CST-24
SOJ28
schottky CST
tc5117805
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Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS SCRAMS FEATURES • Full CMOS, 6T Cell Data Retention with 2.0V Supply (P4C187L Military) ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) -15/20/25/35 ns (Military) Separate Data I/O
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P4C187/P4C187L
P4C187L
P4C187
P4CI87L
22-Pin
-24-Pin
22-Pi
-25PC
-25JC
-25DC
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Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES • Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military ■ High Speed (Equal Access and Cycle Times) -10/12/15/20/25 ns (Commercial) -12/15/20/25/35 ns (Industrial) -15/20/25/35/45 ns (Military)
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P4C187/P4C187L
P4C187
P4C187L
P4C187L
24-Pin
22-Pin
290x490
P4C18PC
-10JC
-12PC
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