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    7450 TRANSISTOR Search Results

    7450 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    7450 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TCD2703ADG

    Abstract: transistor BC 945 THS119 CIPS218CF601 CIPS308BS621 TCD2704DG TCD2955 tcd2704dg-1 tcd2705 TPS606
    Text: Sensors/Image Pickup Devices Photo Sensors z 274 Image Sensors z 280 Magnetic Sensors z 283 273 Photo Sensors Infrared LEDs and Visible LEDs for Sensor Application Electrical/Optical Characteristics Ta = 25°C Part Number Radiant intensity (mW/sr) Features


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    PDF TLN108 TLN201 TLN102 TLN105B TLN110 THS117 THS118 THS119 THS121 THS122 TCD2703ADG transistor BC 945 THS119 CIPS218CF601 CIPS308BS621 TCD2704DG TCD2955 tcd2704dg-1 tcd2705 TPS606

    SPB80N04S2L-04

    Abstract: Q67040-S4261
    Text: Preliminary data SPP80N04S2L-04 SPB80N04S2L-04 OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 40 V • Drain-source on-state resistance RDS on 3.6 mΩ Continuous drain current ID 80 A Enhancement mode • Avalanche rated


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    PDF SPP80N04S2L-04 SPB80N04S2L-04 SPP80N04S2L-04 P-TO220-3-1 Q67040-S4261 SPB80N04S2L-04 P-TO263-3-2 Q67040-S4262 Q67040-S4261

    g51 smd

    Abstract: 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L
    Text: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    PDF IPD50N06S3L-08 PG-TO252-3-11 3N06L08 g51 smd 3N06L08 PG-TO252-3-11 ANPS071E IPD50N06S3L-08 GD15-0 3N06L

    PG-TO252-3

    Abstract: No abstract text available
    Text: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    PDF IPD50N06S3L-08 PG-TO252-3-11 PN06L08 PG-TO252-3

    2N04L04

    Abstract: SPB80N04S2L-04 SMD MARKING CODE M 4 Diode
    Text: Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • SPP80N04S2L-04 SPB80N04S2L-04 Enhancement mode • Logic Level VDS 40 V RDS on max. SMD version 3.3 mΩ ID 80 A P-TO263-3-2 •=175°C operating temperature P-TO220-3-1


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    PDF SPP80N04S2L-04 SPB80N04S2L-04 P-TO263-3-2 P-TO220-3-1 SPP80N04S2L-04 P-TO220-3-1 Q67040-S4261 2N04L04 SPB80N04S2L-04 P-TO263-3-2 2N04L04 SMD MARKING CODE M 4 Diode

    Untitled

    Abstract: No abstract text available
    Text: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    PDF IPD50N06S3L-08 PG-TO252-3-11 PN06L08

    3N06L08

    Abstract: No abstract text available
    Text: IPD50N06S3L-08 OptiMOS -T Power-Transistor Product Summary V DS 55 V R DS on ,max 7.8 mΩ ID 50 A Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified PG-TO252-3-11 • MSL1 up to 260°C peak reflow • 175°C operating temperature


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    PDF IPD50N06S3L-08 PG-TO252-3-11 PG-TO252-3-2 3N06L08 3N06L08

    2N04L03

    Abstract: SPB80N04S2L-03 SPP80N04S2L-03
    Text: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version • Logic Level ID •=175°C operating temperature P-TO263-3-2 40 V 3.1 mΩ 80 A P-TO220-3-1


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    PDF SPP80N04S2L-03 SPB80N04S2L-03 P-TO263-3-2 P-TO220-3-1 Q67040-S4261 Q67040-S4262 2N04L03 SPB80N04S2L-03 SPP80N04S2L-03

    2N04L04

    Abstract: No abstract text available
    Text: SPP80N04S2L-03 SPB80N04S2L-03 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 40 V RDS on max. SMD version 3.1 mΩ • Logic Level ID 80 A •=175°C operating temperature P-TO263-3-2 • Enhancement mode P-TO220-3-1


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    PDF SPP80N04S2L-03 SPB80N04S2L-03 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4261 2N04L04 P-TO263-3-2 2N04L04

    IC 7408

    Abstract: IC 7812 REGULATOR IC 7812 IC TTL 7400 NEC d446c d446c data sheet IC 7408 ic 74151 IC 74153 REGULATOR IC 7912
    Text: 1 of 8 Home Up Hewlett-Packard Part Number to Industry Standard HP Part Number DESCRIPTION Equivalent Part Number 1810-0076 SIP Resistor Network, 1K8 x 8 no industry number 1810-0307 RESISTOR ARRAY 316-101 100 ohms AB 1816-1104 1K ROM HP1350 Char. Gen. no industry number


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    PDF HP1350 82S126 1818-0373B MK34127N D446C-2 NEC/AMNE592 IC 7408 IC 7812 REGULATOR IC 7812 IC TTL 7400 NEC d446c d446c data sheet IC 7408 ic 74151 IC 74153 REGULATOR IC 7912

    FZH115B

    Abstract: fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104
    Text: Digital I.C.s, 74INTEGRATED CIRCUITS DIGITAL TTL, 74LS & 74HC Series Quad 2-input NAND gate Quad 2-input NAND gate, open collector Quad 2-input NOR gate Quad 2-input NOR gate, open collector Hex inverter Hex inverter, O/C collector Hex inverter, Buffer 30V O/P


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    PDF 74INTEGRATED Line-to-10 150ns 16-DIL 150ns 18-pin 250ns 300ns FZH115B fzh261 FZK105 FZH131 FZJ111 FZH115 FZH205 Multiplexer IC 74151 FZH265B 74LS104

    transistor SMD t04

    Abstract: transistor SMD t04 95 TCD2959BFG TCD1709DG 7400 pin configuration TCD2964BFG TCD2959 TODX271A TCD2716DG tcd2563bfg
    Text: Optical Semiconductor Devices Visible LEDs Photosensors Photocouplers and Photorelays Fiber-Optic Devices TOSLINKTM Image Sensors 147 155 158 182 186 145 Visible LEDs Dual-Color LED Lamps Part Number TLRMHGH48T(F) TLRMHGH48M(F) Source Color Intensity (mcd)


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    PDF TLRMHGH48T TLRMHGH48M ET8E99-AS transistor SMD t04 transistor SMD t04 95 TCD2959BFG TCD1709DG 7400 pin configuration TCD2964BFG TCD2959 TODX271A TCD2716DG tcd2563bfg

    MB3841

    Abstract: DS04-27603-1E on-off switch ic FPT-8P-M01
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27603-1E ASSP For Power Supply Applications Power Management Switch IC MB3841 • DESCRIPTION The FUJITSU MB3841 is a one-channel power management switch IC with extremely low on resistance. The MB3841 is designed for a variety of switching applications, featuring operation from low input voltages


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    PDF DS04-27603-1E MB3841 MB3841 F9809 DS04-27603-1E on-off switch ic FPT-8P-M01

    CMOS AREA IMAGE SENSOR 24pin

    Abstract: CCD linear 22pin TCD1304 linear cmos camera SENSOR CIPS218CS600 CIPS299CF600 microcontroller ccd image sensor TCD1304AP CCD scanner Module TCD1209D
    Text: 2000-10 CCDリニアイメージセンサ CCD LINEAR IMAGE SENSOR エネルギーとエレクトロニクス CMOSエリアイメージセンサ CMOS AREA IMAGE SENSOR 14511C2AI 東芝CCDリニアイメージセンサ 東芝CMOSエ CCD LINEAR IMAGE SENSOR CMOS AREA IMAGE


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    PDF 14511C2AI 200DPI TCD1208AP TCD1209D TCD1252AP TCD2255D 300DPI 12DPM CIPS54CS301 CIPS109CS300 CMOS AREA IMAGE SENSOR 24pin CCD linear 22pin TCD1304 linear cmos camera SENSOR CIPS218CS600 CIPS299CF600 microcontroller ccd image sensor TCD1304AP CCD scanner Module TCD1209D

    transistor 6cw

    Abstract: 6cw transistor 6CW 60 6CW 62 rover IRH7450 IRH8450 TO404AA 6CW 75 100 amp silicon controlled rectifier
    Text: Data Sheet No. PD-9.815A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS f IR H 7450 IR H 8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45ft, MEGA RAD HARD HEXFET international Rectifier's MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown


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    PDF IRH7450 IRH845Q 1x106 1x105 IRH7450, IRH84S0 transistor 6cw 6cw transistor 6CW 60 6CW 62 rover IRH7450 IRH8450 TO404AA 6CW 75 100 amp silicon controlled rectifier

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet No. PD-9.815A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IR H 7450 IRH845Q MEGA RAD HARD 500 Volt, 0.45Í2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability and breakdown


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    PDF IRH845Q 1x106 1x10s IRH7450, IRH8450 l--------50

    74HS5

    Abstract: No abstract text available
    Text: 50 CO NNECTIO N DIAGRAMS PINOUT A Ò f f r 1 g- 54/7450 ''54H/74H50 o H ^ / z EXPANDABLE DUAL 2-WIDE 2-INPUT AND-OR-INVERT GATE PINOUT B ORDERING CODE: See Section 9 PIN PKGS OUT COMMERCIAL GRADE MILITARY GRADE V cc = +5.0 V ±5%, T a = 0°C to +70° C V cc = +5.0 V ±10%,


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    PDF 54H/74H50 7450PC, 74H50PC 7450DC, 74H50DC 7450FC, 74H50FC 5450DM, 54H50DM 5450FM, 74HS5

    ic TTL 7451

    Abstract: 7450 ttl 9N51 IC 7450 9n50 IC TTL 7460 7450 transistor 7450 ic 7451 ic ic TTL 7450
    Text: FAIRCHILD TT L/SSI . 9N50/5450, 7450 . 9N51/5451, 7451 EXPANDABLE DUAL 2-WIDE 2-INPUT A N D -O R -IN VER T GATE S C H EM ATIC D IA G R A M EACH G ATE LOG IC A N D CO NNECTIO N D IA G R A M DIP (TOP VIEW ) (See Note d) VCC 1B X X 1D 1C IV F L A T P A K (TOP VIEW )


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    PDF 9N50/5450, 9N51/5451, 9N60/5460, 74CTERISTICS 9N50/7450 400ft ic TTL 7451 7450 ttl 9N51 IC 7450 9n50 IC TTL 7460 7450 transistor 7450 ic 7451 ic ic TTL 7450

    iec 60068-2-27

    Abstract: No abstract text available
    Text: steute Industrial switchgear with radio technology // Radio Receiver FE 1 Features/options • Therm oplastic enclosure L E D s for indication of switching state • EnOcean standard 868 MHz frequency band • 1-channel: potential-free re la y outputs 35 mm enclosure


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    Untitled

    Abstract: No abstract text available
    Text: Powered by Electrical Characteristics over recommended operating free-air temperature range unless otherwise noted . ICminer.com DM54/74 Parameter Conditions 23 Min V|H High L e ve l Input V oltag e V|L Low Level Input V o ltag e V| Input C lam p V o ltag e


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    PDF DM54/74

    DM7423

    Abstract: input output expander DM54 DM74 DM7450 DM7453 DM5423
    Text: This Material Electrical Characteristics o v e r r e c o m m e n d e d o p e r a t in g f r e e - a ir t e m p e r a t u r e r a n g e u n l e s s o t h e r w is e n o t e d . M D M 54/74 Parameter Conditions 23 Min Copyrighted V|H H ig h L e v e l Input V o lt a g e


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    PDF DM54/74 DM7423 input output expander DM54 DM74 DM7450 DM7453 DM5423

    C268

    Abstract: MB3841 data sheet IC 7450 on-off switch ic FPT-8P-M01
    Text: ASSP For Power Supply Applications Power Management Switch 1C MB3841 • DESCRIPTION The FUJITSU MB3841 is a one-channel power management switch IC with extremely low on resistance. The MB3841 is designed for a variety of switching applications, featuring operation from low input voltages


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    PDF MB3841 MB3841 FPT-8P-M01 FPT-8P-M01) F08002S-4C-4 C268 data sheet IC 7450 on-off switch ic FPT-8P-M01

    MH1SS1

    Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
    Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik


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    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27603-1E ASSP For Power Supply Applications Power Management Switch IC MB3841 DESCRIPTION The FUJITSU MB3841 is a one-channel power management switch IC with extremely low on resistance. The MB3841 Is designed for a variety of switching applications, featuring operation from low Input voltages


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    PDF DS04-27603-1E MB3841 MB3841 D-63303 F9809