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    749 PIN CONFIGURATION Search Results

    749 PIN CONFIGURATION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    749 PIN CONFIGURATION Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS Pin Electronics Product Listing January 1999 Part Number Technology Configuration Drivers 211 646 647 649 749 818 846 3µ CMOS 3µ CMOS 3µ CMOS 3µ CMOS 4µ CMOS 4µ CMOS 4µ CMOS D/D D/C/L D/C/L D/C D/C D/C D/D/C/L 2 1 1 8 8 8 1 16 2 – 1 Comparators


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    XCF02S

    Abstract: XCF04S XAPP544 XCV50E microblaze
    Text: Application Note: XCF02S and XCF04S PROMs Using Xilinx XCF02S/XCF04S JTAG PROMs for Data Storage Applications R XAPP544 v1.1 January 11, 2008 Author: Arthur Khu, Farshid Shokouhi, Jameel Hussein, Amrish Patel Summary This application note describes a method for combining FPGA configuration data and generalpurpose user data into a Xilinx XCF02S (2 Mbit) or XCF04S (4 Mbit) configuration PROM.


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    XCF02S XCF04S XCF02S/XCF04S XAPP544 XCF02S XCF04S XAPP544 XCV50E microblaze PDF

    arinc 818

    Abstract: parylene conformal coating arinc-818 rj2g
    Text: RJ-2G-SX-DPLX-LC-R-A-x Rugged RJ Size 100Mb/s to 2.5Gb/s Fiber Optic Transceiver 749 Miner Road, Highland Heights, OH 44143 440 446-8800, [email protected] Features RJ-2G-SX-DPLX-LC-R-A is ideal for harsh environment connectivity Absolute Maximum Ratings


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    100Mb/s IEC-825 850nm 545d25 arinc 818 parylene conformal coating arinc-818 rj2g PDF

    embedded system mini projects using 8051 free

    Abstract: agriculture based electronics projects DB25 LPT 8086 microprocessor mini project circuit ic 8051 MEMORY CARD 128 KB BROSE mini projects using bread board and integrated MCU 80C535 BOSCH 7.4.9 MM486
    Text: C o v e r i n g t h e E n t i r e S p e c t r u m o f E m b e d d e d C o n t r o l Trusted C167/ST10 Embedded Architecture now in phyCORE SBC ® design C o v e r i n g t h e E n t i r e S p e c t r u m phyCORE®-167CR/CS E m b e d d e d C o n t r o l Product Catalogue 2001


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    C167/ST10 -167CR/CS C167CR/CS ST10F168 16-bit, D-07973 D-55129 16-bit 32-bit embedded system mini projects using 8051 free agriculture based electronics projects DB25 LPT 8086 microprocessor mini project circuit ic 8051 MEMORY CARD 128 KB BROSE mini projects using bread board and integrated MCU 80C535 BOSCH 7.4.9 MM486 PDF

    Untitled

    Abstract: No abstract text available
    Text: Intel SM35 Express Chipset Datasheet January 2012 Revision 002 Document Number: 325308-002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS


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    CS03

    Abstract: CS032
    Text: SAW Bandpass Filter 202155B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2512 Pin Configuration


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    202155B D2512 04A001 NI1013- CS03 CS032 PDF

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 201518B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


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    201518B D2012 04A001 NW3019-CS02 D2012 PDF

    7473 pin diagram

    Abstract: pin diagram of 7473 RF Prime X band attenuator cpi twt india cpi CPI VZU 6900K6 6900K4 VZU-6991K4
    Text: 6900K4 Series 20 Watt Power Amplifier Features Description • • • • 4.0 TO 18 GHz Octave Bandwidths or Greater Optional GPIB Control One Year Warranty Unlimited Hours • Worldwide Support Centers • 24 Hour Hotline for customer support (800) 231-4818 or 1-650-846-3700


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    6900K4 89/336/EEC 7473 pin diagram pin diagram of 7473 RF Prime X band attenuator cpi twt india cpi CPI VZU 6900K6 VZU-6991K4 PDF

    FLL1500IU-2C

    Abstract: imt 901 L-band 500 watt amplifier FLL1500
    Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


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    FLL1500IU-2C FLL1500IU-2C 12-R0 imt 901 L-band 500 watt amplifier FLL1500 PDF

    S1365

    Abstract: No abstract text available
    Text: Bandpass Filter 222053B 1. Features IF bandpass filter Low-Loss Filter Single-ended operation Ceramic Surface Mount Device SMD Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device (ESD) 2. Package Dimension 13.30±0.2


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    222053B 08A001 S1365 NJ8012-CS01 S1365 PDF

    FLL1500IU-2C

    Abstract: eudyna GaAs FET Amplifier
    Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


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    FLL1500IU-2C FLL1500IU-2C eudyna GaAs FET Amplifier PDF

    FLL1500IU-2C

    Abstract: No abstract text available
    Text: FLL1500IU-2C L-Band High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 150W Typ. High PAE: 48% (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that


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    FLL1500IU-2C FLL1500IU-2C FCSI1199M200 PDF

    Untitled

    Abstract: No abstract text available
    Text: I N T E G R A T E D C IR C U IT S S^EET 83C749/87C749 80C51 8-bit microcontroller family 2K/64 OTP/ROM, 5 channel 8-bit A/D, PWM, low pin count Prelim inary specification Supersedes data of 1998 Jan 06 IC20 Data Handbook Philips Semiconductors 1998 Apr 23


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    83C749/87C749 80C51 2K/64 83C749/87C749 749/87C749 8XC749 PDF

    Signal Path Designer

    Abstract: altera ep910i
    Text: Classic EPLD Family M ay 1999 ver. ;> Features D ata S h e e t • ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete device family with logic densities of 300 to 900 usable gates see Table 1 Device erasure and reprogramming with non-volatile EPROM configuration elements


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    PDF

    749 MOSFET TRANSISTOR motorola

    Abstract: MAX749CPA
    Text: 19-0143; Rev 0; 5/93 V M ^ X I V M D igitally A djustable LCD Bias Supply _ G eneral Description The MAX749 generates negative LCD-bias contrast voltages from 2V to 6V inputs. Full-scale output voltage can be scaled to -100V or greater, and is d ig ita lly


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    MAX749 -100V 500kHz) 1178m 2032m 749 MOSFET TRANSISTOR motorola MAX749CPA PDF

    MARKING CODE Zi sot363

    Abstract: WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS
    Text: SIEMENS BCR 198S PNP Silicon Digital Transistor Array >Switching circuit, inverter, interface circuit, driver circuit •Two galvanic internal isolated Transistors in one package ■Built in bias resistor (R1=47k£i, R2=47kQ) Type Marking Ordering Code Pin Configuration


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    Q62702-C2419 OT-363 27llector-base MARKING CODE Zi sot363 WRS SOT363 Marking Code ZI ZI Marking Code transistor sot-363 marking ZI 198S Transistor WRS PDF

    749 MOSFET TRANSISTOR motorola

    Abstract: 749PC GE DC 300 ADJUSTABLE SPEED DRIVE 4151d MAX749CA MAX749EA zetex 749 MAX749CPA
    Text: 19-0143; Rev 0; 5/93 V M y JX IV M D igitally A djustable LCD Bias Supply _ G eneral D escription .F eatures The MAX749 generates negative LCD-bias contrast voltages from 2V to 6V inputs. Full-scale output voltage can be scaled to -100V or greater, and is d ig ita lly


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    MAX749 -100V 500kHz) 1178mm) 749 MOSFET TRANSISTOR motorola 749PC GE DC 300 ADJUSTABLE SPEED DRIVE 4151d MAX749CA MAX749EA zetex 749 MAX749CPA PDF

    749 MOSFET TRANSISTOR motorola

    Abstract: MAX749CPA
    Text: 19-0143; Rev 1; 2/95 D igitally Adjustable LCD Bias Supply A unique current-limited control scheme reduces supply current and maximizes efficiency, while a high switching frequency up to 500kHz minimizes the size of external components. Quiescent current is only 60|jA max and is


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    500kHz) MAX749 DD1S347 749 MOSFET TRANSISTOR motorola MAX749CPA PDF

    E2E1

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification 80C51 8-bit microcontroller family 83C749/87C749 2K/64 OTP/ROM, 5 channel 8-bit A/D, PWM, low pin count DESCRIPTION FEATURES The Philips 83C749/87C749 offers many of the advantages of the 80C51 architecture in a sm all package and at low cost.


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    80C51 2K/64 83C749/87C749 83C749/87C749 8XC749 83C749) 87C749) 16-bit E2E1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PROFET BTS707 Smart Two Channel Highside Power Switch Features • • • • • • • Overload protection Current limitation Short-circuit protection Thermal shutdown Overvoltage protection Fast demagnetization of inductive loads Reverse battery protection1


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    BTS707 P-DSO-20-9 Q67060-S7010-A2 PDF

    Signal Path Designer

    Abstract: No abstract text available
    Text: Classic EPLD Family M ay 1999, ver. 5 Features Data Sheet • ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete device family w ith logic densities of 300 to 900 usable gates see Table 1 Device erasure and reprogram m ing w ith non-volatile EPROM configuration elements


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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC D5 . : - 7964142 D E § T'Jtm M a DOObbll b ' SAMSUNG SEMICONDUCTOR INC 02E 06691 D = CMOS Programmable Logic Array With Output Macrocells 24-Pin CPL22V10 ADVANCE INFORMATION FEATURES/BENEFITS DESCRIPTION • High speed CMOS programmable alternative to


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    CPL22V10 24-Pin) 22V10 D00t71ñ PDF

    Untitled

    Abstract: No abstract text available
    Text: FLL1200IU-2A L-Band Medium & High Power GaAs FETs f u j Ît s u FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2000 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL1200IU-2A is a 120 Watt GaAs FET that employs a push-pull design that


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    FLL1200IU-2A FLL1200IU-2A IMT-2000 PDF

    FLL1200IU2A

    Abstract: IMT-2000 LDS288 FLL120 Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier
    Text: FLL1200IU-2A - L-Band Medium & High Power GaAs FET FEATURES • • • • • Push-Pull Configuration High Power Output: 120W Typ. High PAE: 44%. Broad Frequency Range: 2000 to 2200 MHz. Suitable for class AB operation.


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    FLL1200IU-2A FLL1200IU-2A IMT-2000 FCSI0598M200 FLL1200IU2A LDS288 FLL120 Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier PDF