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    74F213

    Abstract: hl06 7L04 Random Access Memory RAM
    Text: 213 54F/74F213 Connection Diagrams 192-Bit Random Access M em ory WitJb 3-State O utputs Aopr Ai[~r 1 3EI a3 TF a2 331/On III I/O10 Ts~|1/09 TT| I/Oe Til H]l/06 TT] 1/05 20 V q c cspr Di&cT The ’ F2 eed 192-bit Random A ccess M em ory RAM) organ­ ¡zed as


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    Abstract: No abstract text available
    Text: 213 54F/74F213 Connection Diagrams 192-Bit Random Access Memory WitJb 3-State Outputs The T 2 jB T lp i JfffPtepeed 192-bit Random Access Memory RAM organ­ ized as a lff'M rtN )y y 2 -b it array. Inputs are buffered to minimize loading and are fully d e ^ d j l o n jp ijk The output buffers are active only in the


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    74F161 PC

    Abstract: 74F163PC 74f500 74f558 74F164PC 74F548PC 74F138d 74F547PC transistor f630 74F253DC
    Text: F a ir c h ild A d v a n c e d S c h o t t k y T L $ 3. HANDLING PRECAUTIONS FOR SEMICONDUCTOR COMPONENTS The follow ing handling precautions should be observed for oxide isolation, shallow junction processed parts, such as FAST or 100K ECL: 1. All Fairchild devices are shipped in conducting foam or anti­


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