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    Untitled

    Abstract: No abstract text available
    Text: • M3D E27 1 0 0 5 3 73 0 7fl4 ■ HAS _ 2N6763 2N6764 H a r r is N-Channel Enhancem ent-Mode Power MOS Field-Effect Transistors A u g u st 1991 Features Package TO -20 4 A E BOTTOM VIEW • 31A and 38A, 60V - 100V • rDS on = 0 .0 8 ÎÎ and 0 .0 5 5 ÎÎ


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    PDF 2N6763 2N6764 2N6763 2N6764

    Untitled

    Abstract: No abstract text available
    Text: • 4302271 0053742 ÜJ HARRIS 4Tb ■ August 1991 HAS 2N 6769 2 N 6770 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors Package Features T O -2 0 4 A A • 11A and 12A, 450V - 500V BOTTOM VIEW • rQ3 |on = 0.5H and 0.40 • SOA is Power-Dissipation Limited


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    PDF 43D2271 2N6769, 2N6770