76113 SOT223 Search Results

76113 SOT223 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
76113-101		Amphenol Communications Solutions	76113-101-TERM
76113-102		Amphenol Communications Solutions	JUMPER
91276-113HLF		Amphenol Communications Solutions	BergStik® 2.54mm, Board To Board Connector, Unshrouded Header, Through Hole, Single Row, 13 Positions, 2.54mm Pitch, Vertical, 22.86mm (0.9in) Mating, 5.72mm (0.225in) Tail.
54776-113-06LF		Amphenol Communications Solutions	BergStik®, Board to Board connector, Unshrouded Vertical Stacking Header, Through Hole, Double row , Double body, Triplex, 6 Positions, 2.54mm (0.100in) Pitch
85761-1301LF		Amphenol Communications Solutions	Metral® Board Connectors, Backplane Connectors, 5 Row Signal Receptacle,Straight, Press-Fit.

76113 SOT223 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
76113 Abstract: AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334 Text: HUF76113T3ST Data Sheet June 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the	Original	HUF76113T3ST 76113 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334	PDF
TA7611 Abstract: TB334 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST Text: HUF76113T3ST Data Sheet December 2001 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the	Original	HUF76113T3ST TA7611 TB334 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST	PDF
n13 sot 23 Abstract: No abstract text available Text: HUF76113T3ST Data Sheet June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in	Original	HUF76113T3ST n13 sot 23	PDF
n13 sot 23 Abstract: 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334 Text: HUF76113T3ST TM Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced	Original	HUF76113T3ST OT-223 330mm 100mm EIA-481 n13 sot 23 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334	PDF
Untitled Abstract: No abstract text available Text: HUF76113T3ST Data Sheet January 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the	Original	HUF76113T3ST	PDF
Untitled Abstract: No abstract text available Text: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced	Original	HUF76113T3ST	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
Saber Abstract: TB334 relay spice model mosfet 407 76113 Power MOSFET SOT-223 Power logic MOSFET SOT-223 power relay N-channel mosfet Logic Level N-Channel Power MOSFET HUF76113T3ST Text: HUF76113T3ST interrii June 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features Logic Level Gate Drive # This N-Channel power MOSFET is manufactured using the innovative &WMW W UltraFET process. This advanced * process technology achieves the	OCR Scan	HUF76113T3ST TB334, OT-223 Saber TB334 relay spice model mosfet 407 76113 Power MOSFET SOT-223 Power logic MOSFET SOT-223 power relay N-channel mosfet Logic Level N-Channel Power MOSFET HUF76113T3ST	PDF
Untitled Abstract: No abstract text available Text: i n t e r n a HUF76113T3ST i Ju n e 1999 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET F ile N u m b e r 4388.2 Features • Logic Level G ate Drive This N-Channel power M O S F E T is • 4.7A, 30V manufactured using the innovative • Ultra Low On-Resistance, r ^ o N = 0.031 £2	OCR Scan	HUF76113T3ST	PDF