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    76132S Search Results

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    76132S Price and Stock

    Rochester Electronics LLC HUF76132S3S

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76132S3S Bulk 307
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    Rochester Electronics LLC HUF76132S3ST

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76132S3ST Bulk 307
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    Wiha Quality Tools 76132

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 76132
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    • 100 $8.72
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    Fairchild Semiconductor Corporation HUF76132S3S

    75A, 30V, 0.016ohm, N-Channel Power MOSFET, TO-263AB '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUF76132S3S 4,000 1
    • 1 $0.9426
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    Fairchild Semiconductor Corporation HUF76132S3ST

    75A, 30V, 0.016ohm, N-Channel Power MOSFET, TO-263AB '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HUF76132S3ST 9,600 1
    • 1 $0.9426
    • 10 $0.9426
    • 100 $0.886
    • 1000 $0.8012
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    76132S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 32S bt .5A 0V, 115 m, an, gic vel raF wer OST) utho • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER∏


    Original
    PDF HUF76132SK8

    AN7254

    Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
    Text: 76132SK8 Data Sheet January 2003 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF76132SK8 AN7254 AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF76132P3, 76132S3S Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. This 6132P advanced process technology 3, achieves the lowest possible on-resistance per silicon area,


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    PDF HUF76132P3, HUF76132S3S 6132P HUF76 132S3

    AN7254

    Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
    Text: 76132SK8 Data Sheet September 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 11.5A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - Spice and SABER Thermal Impedance Models


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    PDF HUF76132SK8 TB334, TA76131. MS-012AA AN7254 AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334

    118E-2

    Abstract: KP120 TC292
    Text: HUF76132P3, 76132S3S Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs are manufactured using the HUF7 innovative UltraFET process. This 6132P advanced process technology 3, achieves the lowest possible on-resistance per silicon area,


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    PDF HUF76132P3, HUF76132S3S 6132P HUF76 132S3 118E-2 KP120 TC292

    76132S

    Abstract: No abstract text available
    Text: HUF76132P3, 76132S3S Data Sheet December 2002 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF76132P3, HUF76132S3S 76132S

    76132P

    Abstract: TA7613 AN9321 AN9322 HUF76132P3 HUF76132S3S HUF76132S3ST TB334
    Text: HUF76132P3, 76132S3S Data Sheet December 2001 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF76132P3, HUF76132S3S 76132P TA7613 AN9321 AN9322 HUF76132P3 HUF76132S3S HUF76132S3ST TB334

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


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    PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    76132P

    Abstract: AN9321 AN9322 HUF76132P3 HUF76132S3S HUF76132S3ST TB334 76132S
    Text: HUF76132P3, 76132S3S Data Sheet January 2003 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF76132P3, HUF76132S3S 76132P AN9321 AN9322 HUF76132P3 HUF76132S3S HUF76132S3ST TB334 76132S

    76132P

    Abstract: HUF76132P3 HUF76132S3S HUF76132S3ST TB334
    Text: HUF76132P3, 76132S3S Semiconductor Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the innovative UltraFET process. This 132P3, advanced process technology


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    PDF HUF76132P3, HUF76132S3S HUF76 132P3, 132S3S low30V, 51e-2 03e-2 05e-2 76132P HUF76132P3 HUF76132S3S HUF76132S3ST TB334

    AN7254

    Abstract: AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334
    Text: 76132SK8 Data Sheet December 2001 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the


    Original
    PDF HUF76132SK8 AN7254 AN9321 AN9322 HUF76132SK8 HUF76132SK8T MS-012AA TB334

    76132s

    Abstract: 76132P AN9321 AN9322 HUF76132P3 HUF76132S3S HUF76132S3ST TB334 TA7613 TA76132
    Text: HUF76132P3, 76132S3S Data Sheet September 1999 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Features These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF76132P3, HUF76132S3S 76132s 76132P AN9321 AN9322 HUF76132P3 HUF76132S3S HUF76132S3ST TB334 TA7613 TA76132

    TC297

    Abstract: LSE 0405 HUF76132S3
    Text: ? *3 2 £ HUF76132P3, 76132S3, 76132S3S 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs July 1998 | Features • Logic Level Gate Drive Description w These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF76132P3, HUF76132S3, HUF76132S3S TB334, O-263AB O-263AB TC297 LSE 0405 HUF76132S3

    Untitled

    Abstract: No abstract text available
    Text: 76132SK8 Semiconductor Data Sheet June 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


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    PDF HUF76132SK8

    76132S

    Abstract: 76132p
    Text: HUF76132P3, 76132S3S interrii Data S h e e t 754, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF76132P3, HUF76132S3S HUF76132S3S AN7254 AN7260. 76132S 76132p

    Untitled

    Abstract: No abstract text available
    Text: in te r r ii 76132SK8 D a ta s h e e t S e p te m b e r 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power M O SFET This N-Channel power M O S F E T is manufactured using the innovative UltraFET process. This advanced process technology achieves the


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    PDF HUF76132SK8