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    76413D Search Results

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    76413D Price and Stock

    Rochester Electronics LLC HUF76413D3

    N-CHANNEL POWER MOSFET
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    DigiKey HUF76413D3 Bulk 606
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    onsemi HUFA76413D3S

    MOSFET N-CH 60V 20A TO252AA
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    DigiKey HUFA76413D3S Tube 1,800
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    Rochester Electronics LLC HUFA76413D3S

    MOSFET N-CH 60V 20A TO252AA
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    DigiKey HUFA76413D3S Tube 1,025
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    onsemi HUFA76413DK8T

    MOSFET 2N-CH 60V 5.1A 8SOIC
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    DigiKey HUFA76413DK8T Reel
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    HUFA76413DK8T Digi-Reel 1
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    HUFA76413DK8T Cut Tape
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    onsemi HUFA76413D3ST

    MOSFET N-CH 60V 20A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUFA76413D3ST Reel 2,500
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    76413D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN9321

    Abstract: HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334
    Text: 76413D3, 76413D3S Data Sheet November 2000 File Number 4975 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE 76413D3S 76413D3


    Original     		PDF HUFA76413D3, HUFA76413D3S O-251AA O-252AA HUFA76413D3 AN9321 HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334

    76413DK8

    Abstract: MARKING 59E HUFA76413DK8 HUFA76413DK8T
    Text: 76413DK8 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy


    Original     		PDF HUFA76413DK8 76413DK8 MARKING 59E HUFA76413DK8 HUFA76413DK8T

    AN7254

    Abstract: AN9321 AN9322 HUF76413D3 HUF76413D3S HUF76413D3ST TB334
    Text: 76413D3, 76413D3S Data Sheet November 1999 File Number 4724.1 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE 76413D3S 76413D3


    Original     		PDF HUF76413D3, HUF76413D3S O-251AA O-252AA HUF76413D3 AN7254 AN9321 AN9322 HUF76413D3 HUF76413D3S HUF76413D3ST TB334

    HUFA76413DK8T

    Abstract: No abstract text available
    Text: 76413DK8T N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy


    Original     		PDF HUFA76413DK8T HUFA76413DK8T

    Untitled

    Abstract: No abstract text available
    Text: 76413DK8T N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy


    Original     		PDF HUFA76413DK8T

    Untitled

    Abstract: No abstract text available
    Text: 76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy


    Original     		PDF HUFA76413DK8T

    AN9321

    Abstract: HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334 55E-1
    Text: 76413D3, 76413D3S Data Sheet December 2001 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE 76413D3S 76413D3 Features • Ultra Low On-Resistance


    Original     		PDF HUFA76413D3, HUFA76413D3S O-251AA O-252AA HUFA76413D3 76413D AN9321 HUFA76413D3 HUFA76413D3S HUFA76413D3ST TB334 55E-1

    AN9321

    Abstract: AN9322 HUF76413D3 HUF76413D3S HUF76413D3ST TB334
    Text: 76413D3, 76413D3S Data Sheet December 2001 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE 76413D3S 76413D3 Features • Ultra Low On-Resistance


    Original     		PDF HUF76413D3, HUF76413D3S O-251AA O-252AA HUF76413D3 76413D HUF764opment. AN9321 AN9322 HUF76413D3 HUF76413D3S HUF76413D3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: 76413D3, 76413D3S TM Data Sheet November 2000 File Number 4975 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA DRAIN (FLANGE) SOURCE DRAIN GATE GATE SOURCE 76413D3S 76413D3


    Original     		PDF HUFA76413D3, HUFA76413D3S O-251AA O-252AA HUFA76413D3 O-251AA O-252AA 76413D

    AN9321

    Abstract: HUF76413D3 HUF76413D3S HUF76413D3ST TB334
    Text: 76413D3, 76413D3S Data Sheet November 1999 File Number 4724.1 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Title UF7 13D UF76 3D3 bjec 0A, V, 56 m, Packaging JEDEC TO-251AA DRAIN FLANGE JEDEC TO-252AA GATE SOURCE 76413D3S


    Original     		PDF HUF76413D3, HUF76413D3S O-251AA O-252AA HUF76413D3 76413D AN9321 HUF76413D3 HUF76413D3S HUF76413D3ST TB334

    76413DK8

    Abstract: No abstract text available
    Text: 76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy


    Original     		PDF HUFA76413DK8T 76413DK8

    76413DK8

    Abstract: HUFA76413DK8T
    Text: 76413DK8T N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy


    Original     		PDF HUFA76413DK8T 76413DK8 HUFA76413DK8T

    3kv 27k

    Abstract: schematic diagram lcd monitor advance 17 27k 3kv 32 inch LCD TV SCHEMATIC efd2124 circuit diagram tv monitor lcd advance capacitor 27k 3kv capacitor c1 220uF 3kv fuse lcd inverter board schematic
    Text: FAN7313 LCD Backlight Inverter Drive IC Features Description „ High-Efficiency Single-Stage Power Conversion FAN7313 provides all the control functions for a series parallel resonant converter as well as a pulse width modulation PWM controller to develop a supply voltage.


    Original     		PDF FAN7313 20-Pin FAN7313 30kHz 250kHz, 3kv 27k schematic diagram lcd monitor advance 17 27k 3kv 32 inch LCD TV SCHEMATIC efd2124 circuit diagram tv monitor lcd advance capacitor 27k 3kv capacitor c1 220uF 3kv fuse lcd inverter board schematic

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    95E-2

    Abstract: AN9321 AN9322 HUF76413D3 HUF76413D3S HUF76413D3ST TB334 Saber 65e3
    Text: in t e 76413D3, 76413D3S r r ii November 1999 Data Sheet File Num ber 4724.1 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE • Ultra Low On-Resistance ‘ rDS(ON) = 0.049i2, VGS = 10V


    OCR Scan     		PDF O-251AA O-252AA HUF76413D3 HUF76413D3S HUF76413D3, HUF76413D3 O-251AA 76413D HUF76413D3S 95E-2 AN9321 AN9322 HUF76413D3ST TB334 Saber 65e3

    Untitled

    Abstract: No abstract text available
    Text: inter«! 76413D3, 76413D3S D a ta S h e e t N o v e m b e r 1999 20A, 60V, 0.056 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging U F ile N u m b e r 4 7 2 4 .1 lt r a liif r Features JED E C TO -2 51A A JE D E C T O -252A A DRAIN • Ultra Low On-Resistance


    OCR Scan     		PDF HUF76413D3, HUF76413D3S -252A HUF76413D3 F76413D3 F76413D3S O-251 -252AA