Untitled
Abstract: No abstract text available
Text: Advanced CAT28HT256 E x te n d e d T e m p e r a tu r e : 1 7 0 ° C 256K-Bit CMOS PARALLEL E2PROM FEATURES • Fast Read Access Times: 200/250 ns ■ Automatic Page Write Operation: -1 to 64 Bytes in 10ms -P a g e Load Tim er ■ Low Power CMOS Dissipation:
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CAT28HT256
256K-Bit
CAT28HT256
28HT256
CAT28HT256HD-20
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PDF
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Untitled
Abstract: No abstract text available
Text: ICRTRLYST I S E M I C O N D U C T O R CAT28C65A/CAT28C65AI 64K-Bit CMOS E2PROM FEATURES • Fast Read A ccess T im es: 150/200/250ns ■ A u to m atic Pag e W rite O peratio n -1 to 32 B ytes in 10m s - P a g e Load T im e r ■ Low P o w er C M O S Dissipation:
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CAT28C65A/CAT28C65AI
64K-Bit
150/200/250ns
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PDF
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V61C16
Abstract: No abstract text available
Text: gr VITELIC V61C16 FAMILY HIGH PERFORMANCE LOW POWER 2K x 8 BIT CMOS STATIC RAM f Description Features m • ■ ■ ■ ■ ■ ■ The V61C16 is a high speed, low power, 2048-word by 8-bit CMOS static RAM fabricated using high-performance CMOS process technology.
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V61C16
2048-word
500mV
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PDF
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sn 74374
Abstract: SAB82731 sab8273 82731 dot BB505G 16XT1 82730
Text: S IE M E N S SAB 82731 Dot Rate Generator A complete video interface between CRT controller and CRT display SAB 82731 50 M Hz SAB 82731-2 80 MHz SAB 82731-3 65 MHz • Dot sh ift rates up to 80 MHz SAB82731-2 • Character a ttrib u te processing • Character length up to 16 dots
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SAB82731-2)
40-pin
sn 74374
SAB82731
sab8273
82731 dot
BB505G
16XT1
82730
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PDF
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Untitled
Abstract: No abstract text available
Text: This document is not intended for viewing onscreen. It is best viewed when printed and read from paper. Depending on your printer, you may need to select “Shrink to Fit” in the print dialog to ensure that the document prints correctly. [AK9824] AS AH I KASEI
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AK9824]
AK9824
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PDF
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Untitled
Abstract: No abstract text available
Text: M O S E L V IT E L IC VS3C8125H ULTRA-HIGH PERFORMANCE, 128K X 8 B IT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE PRELIMINARY 35 40 45 50 Max. RAS Access Time, lRAc 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, (tCAA) 18 ns 20 ns 22 ns 24 ns
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VS3C8125H
V53C8125H
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PDF
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Untitled
Abstract: No abstract text available
Text: M OSEL VITELIC V54C316802VA HIGH PERFORMANCE 3.3 VOLT2M X 8 SYNCHRONOUS DRAM 2 BANKS X 1MBit X 8 CAS Latency = 3 PRELIMINARY 8 10 12 System Frequency fCK 125 MHz 100 MHz 83 MHz Clock Cycle Tim e (tcK 3 ) 8 ns 10 ns 12 ns Clock Access Tim e (tAC3) 7 ns 8 ns
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V54C316802VA
V54C316802VA
44-Pin
L0-15
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PDF
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Untitled
Abstract: No abstract text available
Text: STK22C48 SllflTEH CMOS nvSRAM 2K x 8 High Performance AutoStore Nonvolatile Static RAM FEATURES DESCRIPTION 30,35 and 45ns Access Times 15 mA lcc at 200ns Access Speed Automatic STORE to EEPROM on Power Down Hardware Initiated STORE io EEPROM Automatic sro/7£Timlng
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STK22C48
200ns
600-mil
350mil
STK22C48
350-mil
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PDF
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Untitled
Abstract: No abstract text available
Text: I‘f VITEUC V53C128A FAMILY HIGH PERFORMANCE, LOW POWER 128K X 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C128A 70/70L 80/80L 10/10L 70 ns 60 ns 100 ns Max. RAS Access Time, tRAC Max. Column Address Access Time, (tCAA) 35 ns 40 ns 45 ns Min. Fast Page Mode Cycle Time, (tp c)
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V53C128A
70/70L
80/80L
10/10L
V53C128A
V53C128AL
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PDF
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Untitled
Abstract: No abstract text available
Text: CAT28C64A/CAT28C64AI 64K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: 150/200/250ns ■ CMOS and TTL Compatible I/O ■ Low Power CMOS Dissipation: -Active: 30mA Max. -Standby: 100|xA Max. ■ Automatic Page Write Operation: -1 to 32 Bytes in 10ms
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CAT28C64A/CAT28C64AI
64K-Bit
150/200/250ns
TheCAT28C64A/CAT28C64AI
CAT28C64A/
CAT28C64AI.
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PDF
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53C256
Abstract: 53C104 V53C104
Text: MOSEL- VITELIC V104J8/9 256K x 8, 256K x 9 CMOS MEM ORY MODULE Features Description • ■ ■ ■ ■ ■ The V104J8/9 Memory Module is organized as 262,144 x 8 (or 9) bits in a 30-lead single-in-line module. The 256K x 8 memory module uses two Vitelic 256K x 4 DRAMs. The 256K x 9 memory
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V104J8/9
V104J8/9
30-lead
53C256
53C104
V53C104
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PDF
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Untitled
Abstract: No abstract text available
Text: MOSEL- VITELIC V53C8256N HIGH PERFORMANCE, 3.3 VOLT 256K X 8 B IT FAST PA GE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE V53C8256N ADVANCED INFORMA TION 60/60L 70/70L 80/80L Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns Max. Column Address Access Time, (tCAA)
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V53C8256N
60/60L
V53C8256N
70/70L
80/80L
V53C8256N-80
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PDF
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CAT28C16A
Abstract: No abstract text available
Text: IIIIIC F IT R L Y S T • ■ III S E M I C O N D U C T O R C A T 2 8 C 1 6 A /C A T 2 8 C 1 6 A l 16K-Bit CMOS E2PROM FEATURES ■ Fast Read Access Times: 200 ns Fast Nonvolatile Write Cycle: 10ms Max ■ Low Power CMOS Dissipation: -A ctive: 25mA Max. -Standby: 100|iA Max.
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16K-Bit
TheCAT28C16A/CAT28C16AI
CAT28C16A/C
AT28C16AI
CAT28C16A/
CAT28C16AI.
CAT28C16A
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PDF
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CAT28LV64
Abstract: No abstract text available
Text: IIIIICRTRLY5T •■1 1 / Preliminary S E M I C O N D U C T O R CAT28LV64 64K-Bit CMOS E2PROM FEATURES ■ 3.0V to 3.6 V Supply Commercial and Industrial Temperature Ranges ■ Read Access Times: - 250/300/350ns CMOS and TTL Compatible I/O Automatic Page Write Operation:
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CAT28LV64
64K-Bit
250/300/350ns
CAT28LV64
28LV64
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PDF
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CAT28C64B
Abstract: No abstract text available
Text: CRTRLYST S E M I C O N D U C T O R CAT28C64B/CAT28C64BI 64K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: -1 2 0 /1 50/200ns Commercial -150/200ns (Industrial) ■ Automatic Page Write Operation: -1 to 32 Bytes in 5ms -P a g e Load Timer ■ Low Power CMOS Dissipation:
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CAT28C64B/CAT28C64BI
64K-Bit
50/200ns
-150/200ns
CAT28C64B
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PDF
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ZN432E
Abstract: Ferranti Semiconductors ferranti T-77-M
Text: FERRANTI £ semiconductors A to D C O N V ER TER ZN432E 1 0 - B i t Successive A op ro x im atio n M o n o lith ic A / D Converter FEATURES • 1 0 Bit R esolution • N o M issing C odes • 2 0 /is C onversion T im e G uaranteed • In p u t R ange as Desired
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ZN432E
10-Bit
ZN432E
62MIL_
156MIL
Ferranti Semiconductors
ferranti
T-77-M
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PDF
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Untitled
Abstract: No abstract text available
Text: • A3623&3 Q0DS37L, TS1 « S O N Y SONY C X K 1 2 0 6 A M /A T M Video Signal Field Memory D escription The C X K 1 2 0 6 A M /A T M is a 3 -p o rt VRAM capable o f coping w ith both NTSC and PAL and o f storing pictures fo r one 8-bit field w ith tw o
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A3623
Q0DS37L,
CXK1206AM
CXK1206ATM
400mi
044-P-0400-AF
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM616V1002A CMOS SRAM 6 4 K x 1 6 B i t High-Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Tim e 1 2 ,1 5 ,1 7 ,2 0 ns(M ax.) • Low Pow er Dissipation The K M 61 6 V 1 00 2 A is a 1,048,576-bit high-speed Static
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KM616V1002A
576-bit
00E1573
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PDF
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Untitled
Abstract: No abstract text available
Text: Advanced CAT28HT256 E x te n d e d T e m p e r a tu r e : 1 7 0 ° C 256K-BÍÍ CMOS PARALLEL E2PR0M FEATURES • Fast Read Access Times: 200/250 ns ■ Automatic Page Write Operation: -1 to 64 Bytes in 10ms -P age Load Timer ■ Low Power CMOS Dissipation:
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CAT28HT256
256K-BÍ
CAT28HT256
28HT256
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PDF
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td5090
Abstract: L0614 1N914 DD01
Text: bflE D CATALYST l'ìbSb'ìS 0001037 TÖD « C S T SEMICONDUCTOR S E M I C O N D U C T O R CAT28C16V3 16K-Bit CMOS POWER MISER E2PROM FEATURES • Fast Read Access Times: 700 ns Fast Nonvolatile Write Cycle: 20ms Max ■ Low Power CMOS Dissipation: -Active: 10mA Max.
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CAT28C16V3
16K-Bit
CAT28C16V3
CAT28C16V3.
a10to30ms
td5090
L0614
1N914
DD01
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PDF
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512X4
Abstract: AC07 H133 HY534256A ci 28448
Text: PRELIMINARY M 1 C 1 2 0 0 A -JA N 9 2 DESCRIPTION FEATURES The HY534256A is a high speed, low power 262,144X 4 bit CMOS dynamic random access memory. Fabricated with the HYUNDAI CMOS process, the HY534256A offers a fast page mode for high bandwide operation, fast
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M1C1200A-JAN92
HY534256A
512X4
100BSC
0295C7
PACKAGE-300
AC07
H133
ci 28448
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMOS SRAM KM64V1003A 2 5 6 K x 4 Bit With UE High-Speed CMOS Static RAM (3.3V Operating) GENERAL DESCRIPTION FEATURES • Fast A ccess Tim e 12,15,17,20 ns(Max.) • Low Power D issipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM64V1003A-12 :1 6 0 mA(Max.)
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KM64V1003A
KM64V1003A-12
KM64V1003AJ
32-SDJ-400
KM64V1003A
576-bit
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PDF
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CAT28LV256
Abstract: No abstract text available
Text: I f f llC Preliminary • I f f ¡ S R E M T I C R O L N D Y U C S T O T R CAT28LV256 256K-Bit CMOS E2PROM FEATURES ■ 3.0V to 3.6V Supply CMOS and TTL Compatible I/O ■ Read Access Times: 250/300/350 ns Automatic Page Write Operation: - 1 to 64 Bytes in 10ms
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CAT28LV256
256K-Bit
CAT28LV256HNI-25TE7
CAT28LV256
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PDF
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Untitled
Abstract: No abstract text available
Text: M OSEL V IT E U C V53C16256HN 256K X16 CMOS DYNAMIC RAM WITH OPTIONAL SELF REFRESH HIGH PERFORMANCE ADVANCED INFORMATION 45 50 Max. RAS Access Time, tRAC 45 ns 50 ns 55 ns 60 ns Max. Column Address Access Tim e, O caa) 22 ns 25 ns 28 ns 30 ns Min. Fast Page Mode Cycle Tim e, (tPC)
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V53C16256HN
V53C16256HN
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PDF
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