4N500
Abstract: IC 741 cn
Text: b427555 GG42530 Tfc.7 « N E C E / / MOS INTEGRATED CIR CU IT ju P D 4 2 S 1 6 1 9 0 , 4 2 S 1 7 1 9 0 , 4 2 S 1 8 1 9 0 16 M B IT D Y N A M IC RAM FA S T PA G E M O D E & B Y T E W R IT E M O DE - P R E LIM IN A R Y -D E S C R IP T IO N
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b427555
GG42530
uPD42S16190
uPD42S17190
uPD42S18190
475mil)
P32VF-100-475A
P32VF-100-475A
4N500
IC 741 cn
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PDF
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SRM-2016
Abstract: SRM2016C SRM2016
Text: SRM2016 CMOS 16K-BIT STATIC RAM • DESCRIPTION The SRM201612 is a 2,048 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with
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SRM2016
16K-BIT
SRM201612
120ns
OI612
SRM201
SRM2016Cis.
SRM2016Ci2.
375mil
450mil.
SRM-2016
SRM2016C
SRM2016
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ctrdiv16
Abstract: t163
Text: TOSHIBA TC74ACT161/163 Synchronous Presettable 4-bit Counter 161: Binary, Asynchronous Clear 163: Binary, Synchronous Clear Features: • The TC74AC161 and T163 are advanced high speed CMOS SYNCHRONOUS PRESETTABLE 4-BIT BINARY COUNTERS fabricated w ith silicon gate and double-layer
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TC74ACT161/163
TC74AC161
TC74ACT161)
TC74ACT163)
TC74ACT161
ctrdiv16
t163
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PDF
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Untitled
Abstract: No abstract text available
Text: Integrated Device TechnoJogy, lie. PRELIMINARY IDT723624 IDT723634 IDT723644 CMOS Sync BiFlFO With Bus-Matching 256 x 36 x 2, 512 x 36 x 2, 1024x36x2 NOTE: There is an errata notice on the last page and the corrections have not been incorporated into this document.
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IDT723624
IDT723634
IDT723644
1024x36x2
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PDF
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Untitled
Abstract: No abstract text available
Text: 3.3 VOLT CMOS SyncBiFlFO WITH BUS-MATCHING 2 5 6 x 3 6 x 2, 512 x 3 6 x 2, 1,024 x 36 x 2_ FEATURES: • Memory storage capacity: IDT72V3624-256 x 36 x 2 IDT72V3634-512 x 36 x 2 IDT72V3644-1,024x36x2 • Clock frequencies up to 83 MHz 8ns access time
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OCR Scan
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IDT72V3624-256
IDT72V3634-512
IDT72V3644-1
024x36x2
PK128-1)
72V3624
72V3634
72V3644
com/docs/PSC4045
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PDF
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BV 3145
Abstract: No abstract text available
Text: CMOS Clocked FIFO With Bus Matching and Byte Swapping 64 x 36 FE ATURES: • Free-running CLKA and CLKB may be asynchronous or coincident perm its sim ultaneous reading and w riting ot data on a single clock edge • 64 x 36 storage capacity FIFO buttering data trom Port A
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IDT723613
36-bits
18-bits
PN120-1)
PQ132-1)
BV 3145
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PDF
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Untitled
Abstract: No abstract text available
Text: QS7025A PRELIMINARY High-Speed CMOS 8K X 16 QS7025A Asynchronous Dual-Port RAM FEATURES/BENEFITS • • • • • • • • H igh-speed asynchronous dual-port architecture Independent port access and control Access tim es from either port, 25/35/45/55 ns
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OCR Scan
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QS7025A
QS7025A
84-pin
100-pin
S7025A
DSF-00010-04
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PDF
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MN7130
Abstract: MN520 MN5240
Text: MN5240 /K fJ ? M ic r o 10 and 12-Bit H IG H-SPEED A/D CONVERTERS N e tw o r k s A D IVISION O F U N I T M M CO R PO R ATIO N FEATURES • Fast Conversion Times: 5psec Max for 12 Bits 4.2psec Max for 10 Bits • Complete A/D Function: internal Clock Internal Reference
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OCR Scan
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MN5240
12-Bit
32-Pin
MIL-STD-883
MN5240
MN7130
MN520
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PDF
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j477
Abstract: V54C365164VC
Text: M O S E L V IT E L IC V54C365164VC HIGH PERFORMANCE 143/133/125 MHz 3.3 V 0 L T 4 M X 16 SYNCHRONOUS DRAM 4 BANKS X 1Mbit X 16 PRELIMINARY 7 75 8PC 8 System Frequency fCK 143 MHz 133 MHz 125 MHz 125 MHz Clock Cycle Tim e (tcK 3) 7 ns 7.5 ns 8 ns 8 ns Clock Access Tim e (tAC3) CAS Latency = 3
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V54C365164VC
V54C365164VC
54-Pin
L0-40
j477
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ST5410
Abstract: pin diagrom of 4 bit up down counters stt4 st5410c cl-gd STS410 1554k
Text: /TT SGS-THOMSON ST5410 6 * [ S Î It iC T M 0 g S 2B1Q U INTERFACE DEVICE A D V A N C E DATA G EN E R AL FEATURES • SINGLE CHIP 2B1Q LINE CODE TR AN S CEIVER ■ SUITABLE FOR BOTH ISDN AND PAIR GAIN APPLICATIO NS ■ MEETS OR EXCEEDS ANSI T 1 .601 -1988
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OCR Scan
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ST5410
ST/LAA/ELR/822
300mW
18KFT
26AWG/24AWG
ST5410
pin diagrom of 4 bit up down counters
stt4
st5410c
cl-gd
STS410
1554k
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PDF
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Untitled
Abstract: No abstract text available
Text: mDi EDI8465C/P35/45/55 High Speed 256K Monolithic SRAM 64Kx4 Static RAM CMOS, High Speed Monolithic The EDI8465C/P is a high performance CMOS Static RAM organized as 64Kx4 and available in both standard power C and low power (P) versions. Inputs and outputs are TTL compatible and allow for direct
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OCR Scan
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EDI8465C/P35/45/55
64Kx4
EDI8465C/P
I8465C/P
MIL-STD-883C,
EDI8465P
EDI8465C/P35/45/55
EDI84650P35/4S/55
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PDF
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NCC 5551
Abstract: CI 555 data X20C04 X20C05 X20C16 IS555
Text: Advance Information X20C05 4K 512x8 High Speed AUTOSTORE NOVRAM_ FEATURES DESCRIPTION • Fast Access Time: 35ns, 45ns, 55ns • High Reliability — Endurance: 1,000,000 Store Operations — Retention: 100 Years Minimum • Power-on Recall
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OCR Scan
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X20C05
512x8
X20C16
51oltage
PGMT15
X20C05
NCC 5551
CI 555 data
X20C04
X20C16
IS555
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PDF
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R7F7
Abstract: No abstract text available
Text: Preliminary H M 5216165 S e r ie s 524,2SS-word x 16-blt x 2-bank Syn ch ro n o u s D ynam ic R A M HITACHI All inpuls and outputs are referred to the rising e d g e o f th e c lo c k in p u t. T h e H M 5 2 1 6 1 6 5 is offered in 2 banks for improved performance.
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OCR Scan
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16-blt
HM5216165TT-10
HM5216165TT-12
HM5216165TT-15
400-mil
50-pin
TTP-50D)
HM5216165
073-Vm
R7F7
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PDF
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62c3232
Abstract: No abstract text available
Text: ADE-203-494A Z HM62C3232FP-7 32,768-word x 32-bit Synchronous Fast Static RAM with Burst Counter and Pipelined Data Output HITACHI Features Ordering Information Type No. Access CPU Clock tim e Rate Package HM62C3232FP-7 7 ns • S in g le 3.3 V p o w e r su p p ly (L V T T L )
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ADE-203-494A
HM62C3232FP-7
768-word
32-bit
62c3232
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PDF
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intel i486
Abstract: IDT7MP6105 7MP6104
Text: bfiE D I S^N. • • Haas77i a n m s 3 i ?is ■ idt IDT7MP6104 128KB/256KB SECONDARY CACHE MODULE IDT7MP6105 FOR THE INTEL i486 INTEGRATED DEVICE Integrated Device Technology, Inc* FEATURES DESCRIPTION • 128 K B /2 5 6 K B d ire c t m a pped , w rite -th ro u g h , no n-sectored ,
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Haas77i
128KB/256KB
IDT7MP6104
IDT7MP6105
486-based
IDT71589
IDT71B74
33MHz
TN-14
intel i486
7MP6104
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PDF
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R40 AH
Abstract: No abstract text available
Text: HM5283206 Series 131,072-word x 32-bit x 2-bank Synchronous Graphic RAM HITACHI ADE-203-223A Z Rev. 1.0 May. 30, 1996 Description All inputs and outputs signals refers to the rising edge of the clock input. The HM5283206 provides 2 banks to realize better performance. 8 column block write function and write per bit function are
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HM5283206
072-word
32-bit
ADE-203-223A
Hz/83
Hz/66
z//77////////a
QQ27flfl2
R40 AH
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PDF
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42S421
Abstract: I2758 uPD424210-60-G eZ 752 SCZ7 NEC Japan 424210-60 7PP4
Text: PRELIMINARY DATA SH EET_ / M O S IN T E G R A T E D CIRCUIT ¿/PD42S4210-60-G,424210-60-G 4 M-BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The ¿/PD42S4210-60-G,424210-60-G is 262 144 words by 16 bits dynamic CM OS RAMs with optional
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OCR Scan
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uPD42S4210-60-G
uPD424210-60-G
16-BIT,
pPD42S4210-60-G
424210-60-G
44-pin
40-pin
/PD42S4210-60-G
42S421
I2758
eZ 752
SCZ7
NEC Japan 424210-60
7PP4
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PDF
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ic 7485
Abstract: pin diagram for IC 7485 pin diagram for IC 7485 input id pin diagram ic 7485 7485 aa ci 7485
Text: PRELIMINARY CYPRESS SEMICONDUCTOR CYM7485 128K Write-Through Secondary Cache Module Features Functional Description • 128-Kbyte direct-mapped, writethrough, zero-wait-state secondary cache module • Operates with 33-MHz Intel 486 pro cessors • Uses low-cost CMOS asynchronous
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OCR Scan
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128-Kbyte
33-MHz
64-position
CYM7485
7485Z
--33C
128-Pin
-00058--A
ic 7485
pin diagram for IC 7485
pin diagram for IC 7485 input id
pin diagram ic 7485
7485 aa
ci 7485
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PDF
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KJh transistor
Abstract: WPD431
Text: NEC OCT 2 « 1992 ELECTRON DEVICE PRELIMINARY DAT* SHEET MOS INTEGRATED C IR C U IT /¿PD43 1 0 0 2 128K X 9 BIT CMOS STATIC RAM DESCRIPTION The ¿¡PD431002 is a high speed, low power, 128K words by 9 bits CMOS static RAM fabricated with advanced silicon-gate CMOS technology. The «PD431002 is a low standby power device using
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uPD431002
PD431002
uPD431002cCDR
KJh transistor
WPD431
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PDF
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multiturn preset potentiometer
Abstract: No abstract text available
Text: MN5240 10 an d 12-Bit H IG H -S P E E D A /D C O N V E R T E R S MICRO NETWORKS DESCRIPTION • Fast Conversion Times: 5/iSec Max for 12 Bits 4.2/^sec Max for 10 Bits • Complete A/D Function: Internal Clock Internal Reference Input Buffer Short-Cycle Pin
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OCR Scan
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MN5240
12-Bit
32-Pin
10-bit
multiturn preset potentiometer
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PDF
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HM5241
Abstract: HM5241605CTT15
Text: HM5241605C Series Preliminary 131,072-w ord x 16-bit x 2-bank Synchronous Dynam ic RAM H IT A C A ll inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2 banks for improved performance. Features • 3.3 V Power supply
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OCR Scan
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HM5241605C
072-w
16-bit
400-mil
50-pin
CP-50D)
TTP-50D)
HM5241
HM5241605CTT15
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PDF
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rft electronica
Abstract: No abstract text available
Text: HM52161 65 Series Preliminary 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs arc referred to the rising edge of the clock input. The H M 5 2 16165 is offered in 2 banks for improved performance. Features Rev. 0.0 Jul. 2 9 ,1 9 9 4
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OCR Scan
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HM52161
288-word
16-bit
HM5216165TT-10
HM5216165TT-12
HM52161657T-15
400-mii
50-pin
TTP-50D)
Hz/83
rft electronica
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7B134 CY7B135 CY7B1342 CYPRESS 4K x 8 Dual-Port Static RAMs and 4K x 8 Dual-Port Static RAM with Semaphores Features Functional Description • 0.8-micron BiCMOS for high performance • High-speed access — 15 ns commercial — 25 ns (military) • Automatic power-down
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OCR Scan
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CY7B134
CY7B135
CY7B1342
7B1342
7B134
48-pin
7B135/7B1342
52-pin
CY7B1342
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PDF
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77777AV
Abstract: R7F7
Text: H M 5 2 4 1 6 5 - 1 Preliminary 2 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs are referred to the rising edge of the clock input. The HM5241605 is offered in 2 banks for improved performance. Features m Rev. 0.0 Jan. 27,1995
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OCR Scan
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072-word
16-bit
HM5241605
HM5241605TT-12
400-mil
50-pin
TTP-50D)
295/200/Kinko
M19T04?
77777AV
R7F7
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PDF
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