785 nm
Abstract: No abstract text available
Text: RLTMDL-785 1-2000 mW Infrared Laser Diode Modul Infrared diode laser module at 785 nm featuring compact size, long lifetime, low cost, and easy operatability, which is widely used for scientific experiments, measurements, optical sensors, communication, spectrum
|
Original
|
PDF
|
RLTMDL-785
90-260VAC)
1-30kHz,
SMA-905/FC
785 nm
|
M9-785-0150-S5P
Abstract: M9-785-0150-S50 M9-785-0080-S50 c2785 785nm 785nm diode
Text: Product Specifications Features 785 nm Single-Mode Laser Diodes • Up to 150 mW CW output power. Description: • High Quality, Reliability, Performance High brightness, high quality, and high reliability are the foundation of our single mode product line. Axcel’s 785 nm single mode
|
Original
|
PDF
|
ss-785-pppp-s50
M9-785-0150-S5P
M9-785-0150-S50
M9-785-0080-S50
c2785
785nm
785nm diode
|
C2785
Abstract: 785nm
Text: Product Specifications Features 785 nm Single-Mode Laser Diodes • Up to 150 mW CW output power. • High Quality, Reliability, Performance Description: High brightness, high quality, and high reliability are the foundation of our single mode product line. Axcel’s 785 nm single mode laser diodes
|
Original
|
PDF
|
HW/axcel/sm/785nm-sm-laser-diode
C2785
785nm
|
Untitled
Abstract: No abstract text available
Text: Laser Diodes QLF073A/QLF073D 785 nm FP LASER TO-CAN C00066-03 May 2012 1. DESCRIPTION The QLF073A/QLF073D are 785 nm quantum well laser devices designed for high output power application. The laser diode is mounted into a TO-56 header including a monitor PD and hermetic sealed with a flat glass cap.
|
Original
|
PDF
|
QLF073A/QLF073D
C00066-03
QLF073A/QLF073D
QLF073A
QLF073D)
2002/95/EC.
|
S2118
Abstract: collimator PBK40 collimator focal distance
Text: Aspherical Glass Lens 1. TENTATIVE . TENTATIVE SPECIFICATION Nov.13,2008 Panasonic Electronic Devices Nitto Co., Ltd. Collimator Lens Model No. S2118 Design Specification Proposal t=2.23 Parameter Unit Specification 1 Design Wavelength nm 785 2 Focal length
|
Original
|
PDF
|
S2118
PBK40
S2118
collimator
PBK40
collimator focal distance
|
Untitled
Abstract: No abstract text available
Text: LuxxMaster Wavelength Stabilized High Power Lasers for 785 nm. Based on proprietary volume Bragg grating VBG ™ technology for stabilizing and shaping the emission spectra of high power laser diodes. LuxxMaster® Fast Axis Collimating Lens C-mount
|
Original
|
PDF
|
|
DL-3144-007S
Abstract: 62503 DL 3144 infrared Laser diode
Text: Ordering number : ENN7590 Infrared Laser Diode DL-3144-007S DL-3144-007S Infrared Laser Diode Features Package Dimensions • Wavelength • Low threshold current • Small package Tolerance : ±0.2 : mm Unit 5.6-0.025 : 785 nm Typ. : Ith = 25 mA (Typ.)
|
Original
|
PDF
|
ENN7590
DL-3144-007S
DL-3144-007S
62503
DL 3144
infrared Laser diode
|
C785
Abstract: No abstract text available
Text: LuxxMaster Wavelength Stabilized High Power Lasers for 785 nm. Based on proprietary volume Bragg grating VBG ™ technology for stabilizing and shaping the emission spectra of high power laser diodes. LuxxMaster® Fast Axis Collimating Lens C-mount
|
Original
|
PDF
|
LML-808
C785
|
LD 7577 ps
Abstract: ld 7577 DL-4034-154S 62503 7577 laser diode for printer
Text: Ordering number : ENN7577 Infrared Laser Diode DL-4034-154S DL-4034-154S Infrared Laser Diode Features Package Dimensions • Wavelength • Low threshold current • Low droop : 785 nm Typ. : Ith = 30 mA (Typ.) : less than 10% Tolerance : ±0.2 Unit : mm
|
Original
|
PDF
|
ENN7577
DL-4034-154S
LD 7577 ps
ld 7577
DL-4034-154S
62503
7577
laser diode for printer
|
RLT7870MG
Abstract: No abstract text available
Text: RLT7870MG TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: single transverse mode Peak Wavelength : typ. 785 nm Optical Ouput Power: 70 mW Package: 5.6 mm Electrical Connection Pin Configuration Bottom View n-type
|
Original
|
PDF
|
RLT7870MG
RLT7870MG
|
785 nm
Abstract: No abstract text available
Text: RLTMDL-785R 1-300 mW ROUND SPOT BEAM PROFIL Infrared Laser Diode Modul Infrared diode laser module at 785 nm featuring compact size, long lifetime, low cost, and easy operatability, which is widely used for scientific experiments, measurements, optical sensors, communication, spectrum
|
Original
|
PDF
|
RLTMDL-785R
90-260VAC)
1-30kHz,
SMA-905/FC
785 nm
|
SPL785-50-4
Abstract: No abstract text available
Text: SPL785-50-4 TECHNICAL DATA Pigtailed Coaxial Laser Diode Features Applications • • • • • • 785 nm SM Fiber Coaxial package Built-in PD Medical laser treatment Printing Electrical Connection Pin Configuration PIN 1 2 3 Bottom View Function n.c.
|
Original
|
PDF
|
SPL785-50-4
SLP785-50-4
SPL785-50-4
|
DL-4140-001
Abstract: DL-4140-001S diode 7579 5mw 788 nm ENN7579
Text: Ordering number : ENN7579 Infrared Laser Diode DL-4140-001S DL-4140-001S Infrared Laser Diode Features Package Dimensions • Wavelength • Low threshold current • Small package Tolerance : ±0.2 : mm Unit 5.6-0.025 : 785 nm Typ. : Ith = 30 mA (Typ.)
|
Original
|
PDF
|
ENN7579
DL-4140-001S
--10eves
DL-4140-001
DL-4140-001S
diode 7579
5mw 788 nm
ENN7579
|
Untitled
Abstract: No abstract text available
Text: Features Product Specifications • Up to 1.4W CW output power 785 nm Multi-Mode 14-Pin Butterfly Module Laser Diodes • Come with internal thermistor, TEC, and photodiode • High Quality, Reliability, & Performance Applications • Raman Spectroscopy • Laser Pumping
|
Original
|
PDF
|
14-Pin
785nm
14-pin
785nm-mm-butterfly-package
|
|
RLD-65NE
Abstract: RLD-78NP10-G1 RLD-78MA4 dvd Lens RLD-78NIT dvd optical drive circuit RLD-78PIT DVD laser RLD-78NP-G1 78mc
Text: CW Laser Diodes 650 nm – 785 nm Employment of highly controllable molecular beam epitaxy MBE and development of SAM laser of ideal laser structure enable us to massmanufacture a new generation RLD series. APPLICATIONS: For Compact Disc Players, CD-ROM
|
Original
|
PDF
|
RLD-78MA,
RLD-78MA4,
RLD-78MAT1,
RLD-78MAT4S
RLD-78MA4
RLD-78MAT4S
RLD-78Mr
RLD-65NE
RLD-78NP10-G1
dvd Lens
RLD-78NIT
dvd optical drive circuit
RLD-78PIT
DVD laser
RLD-78NP-G1
78mc
|
RLT7890MG
Abstract: No abstract text available
Text: RLT7890MG TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: single transverse mode Peak Wavelength : typ. 785 nm Optical Ouput Power: 90 mW Package: 5.6 mm Electrical Connection Pin Configuration Bottom View n-type
|
Original
|
PDF
|
RLT7890MG
RLT7890MG
|
RLT7855MG
Abstract: 100-140mA
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: [email protected] http://www.roithner.mcb.at RLT7855MG TECHNICAL DATA High Power Infrared Laserdiode Structure: GaAlAs double heterostructure Lasing wavelength: 785 nm typ.
|
Original
|
PDF
|
RLT7855MG
RLT7855MG
100-140mA
|
ARR01C060
Abstract: australia heat sink Industrial Microphotonics
Text: Industrial Microphotonics Company 60W CW Laser Diode Array Part Number: ARR01C060 DERRINGER • Packaged Laser Diode Array · Available With Any Silver Bullet® Configuration · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS
|
Original
|
PDF
|
ARR01C060
785-1064nm)
------60W
laser2000
B-10/99
ARR01C060
australia heat sink
Industrial Microphotonics
|
australia heat sink
Abstract: ARR14C160 laser diode array
Text: Industrial Microphotonics Company 160W CW Laser Diode Array Part Number: ARR14C160 EIGHT-SHOOTER TM • Packaged Laser Diode Array · Available With Any Silver BulletTM Configuration · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS
|
Original
|
PDF
|
ARR14C160
785-1064nm)
laser2000
B-10/99
australia heat sink
ARR14C160
laser diode array
|
ASM01P100
Abstract: Laser Diode for cutting
Text: 100W QCW Laser Diode Array Submodule Part Number: ASM01P100 SILVER BULLET TM • Packaged Laser Diode Array · Easily Soldered to a Heat Exchanger · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER CONDITIONS
|
Original
|
PDF
|
ASM01P100
785-1064nm)
------100W
E-10/01
ASM01P100
Laser Diode for cutting
|
RLT7805MG
Abstract: A1040 diode
Text: ROITHNER LASERTECHNIK A-1040 WIEN, FLEISCHMANNGASSE 9 TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43 e-mail: [email protected] http://www.roithner.mcb.at RLT7805MG TECHNICAL DATA Infrared Laserdiode Structure: AlGaAs, index guided, single transverse mode Lasing wavelength: 785 nm typ.
|
Original
|
PDF
|
RLT7805MG
RLT7805MG
A1040 diode
|
RLT780M-1WFC
Abstract: No abstract text available
Text: RLT780M-1WFC TECHNICAL DATA Multi-Mode 14-Pin Butterfly Laser Diode Features • • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 785 nm Optical Ouput Power: 1000 mW Package: 14-Pin Butterfly, Thermistor, TEC Fiber: 100µm core diameter
|
Original
|
PDF
|
RLT780M-1WFC
14-Pin
RLT780M-1WFC
|
tc 785
Abstract: DL-3144-008S
Text: INFRARED LASER DIODE DL-3144-008S Ver.1.1 Oct. 2001 Features Package Tolerance : ± 0.2 Unit : mm ø5.6 - 0.025 ø4.4 • Wavelength : 785 nm (Typ.) • Low threshold current : Ith = 25 mA (Typ.) • Small package : ø5.6mm • Low droop : less than 10%
|
Original
|
PDF
|
DL-3144-008S
tc 785
DL-3144-008S
|
ARR20C020
Abstract: No abstract text available
Text: Industrial Microphotonics Company 20W CW Laser Diode Array Part Number: ARR20C020 E PACKAGE • Packaged Laser Diode Array · Other Powers Are Also Available · Available Wavelengths 785-1064nm OPTICAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS PARAMETER
|
Original
|
PDF
|
ARR20C020
785-1064nm)
------20W
laser2000
B-10/01
ARR20C020
|