Mosfet
Abstract: SSF2816E SSF2816
Text: SSF2816E 20V Dual N-Channel MOSFET Main Product Characteristics VDSS 20V RDS on 16.5mohm(typ.) ID 7A TSSOP-8 Marking and Pin Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF2816E
Mosfet
SSF2816E
SSF2816
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VSSOP8
Abstract: 74HC 74HC3G34 74HC3G34DC 74HC3G34DP 74HCT3G34 74HCT3G34DC 74HCT3G34DP
Text: 74HC3G34; 74HCT3G34 Triple buffer gate Rev. 04 — 9 March 2006 Product data sheet 1. General description The 74HC3G34; 74HCT3G34 is a high-speed Si-gate CMOS device and is pin compatible with Low-power Schottky TTL. Specified in compliance with JEDEC standard no. 7A.
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74HC3G34;
74HCT3G34
74HCT3G34
EIA/JESD22-A114-C
EIA/JESD22-A115-A
HCT3G34
VSSOP8
74HC
74HC3G34
74HC3G34DC
74HC3G34DP
74HCT3G34DC
74HCT3G34DP
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SSF2816E
Abstract: SSF2816 S-SF2816 2816E
Text: SSF2816E DESCRIPTION The SSF2816E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V
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SSF2816E
SSF2816E
Rating2500V
2816E
330mm
SSF2816
S-SF2816
2816E
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Mosfet
Abstract: SSF2816EBK
Text: SSF2816EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V
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SSF2816EBK
SSF2816EBK
Mosfet
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Mosfet
Abstract: SSF2816EB
Text: SSF2816EB 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V
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SSF2816EB
SSF2816EB
Mosfet
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Untitled
Abstract: No abstract text available
Text: GDSSF2816EBK DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V
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GDSSF2816EBK
SSF2816EBK
SSF2816E
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Untitled
Abstract: No abstract text available
Text: GDSSF2814E DESCRIPTION The SSF2814E uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V
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GDSSF2814E
SSF2814E
SSF2814E
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Untitled
Abstract: No abstract text available
Text: GDSSF2816EB DESCRIPTION The SSF2816EB uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 0.75V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V
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GDSSF2816EB
SSF2816EB
SSF2816EB
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP9923GEO-HF-3 Dual P-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs Support 1.8V Gate Drive D1 G1 D2 G2 Low On-resistance RoHS-compliant, halogen-free S1 S2 BVDSS -12V R DS ON 25mΩ ID -7A Description
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AP9923GEO-HF-3
AP9923
9923GEO
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET common drain ELM18822BA-S •General description ■Features ELM18822BA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • • • Vds=20V Id=7A (Vgs=10V) Rds(on) < 21mΩ (Vgs=10V) Rds(on) < 24mΩ (Vgs=4.5V)
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ELM18822BA-S
ELM18822BA-S
curr25Â
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KMC7D0CN20CA TECHNICAL DATA Common N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It’s mainly suitable for Li-ion battery pack. C D 8 5 A FEATURES E1 VDSS=20V, ID=7A. 1 E B A1 4 Low Drain to Source On Resistance.
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KMC7D0CN20CA
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9923GEO
Abstract: AP9923GEO
Text: AP9923GEO RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-Resistance G2 S2 ▼ Small & Thin Package D2 ▼ Capable of 1.8V gate drive S2 TSSOP-8 S1 D1 BVDSS -12V RDS ON 25mΩ ID G1 S1 -7A D1 Description
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AP9923GEO
9923GEO
9923GEO
AP9923GEO
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CN20CA
Abstract: KMC7 KMC7D0CN20CA
Text: SEMICONDUCTOR KMC7D0CN20CA TECHNICAL DATA Common N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It’s mainly suitable for Li-ion battery pack. C D 8 5 A FEATURES E1 VDSS=20V, ID=7A. 1 E B A1 4 Low Drain to Source On Resistance.
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KMC7D0CN20CA
CN20CA
KMC7
KMC7D0CN20CA
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S2G14
Abstract: S2S13
Text: SEMICONDUCTOR KMC7D0CN20C TECHNICAL DATA Dual N-Ch Trench MOSFET General Description Switching regulator and DC-DC Converter applications. It s mainly suitable for Li-ion battery pack. C D 8 5 A FEATURES E1 VDSS=20V, ID=7A. 1 E B A1 4 Low Drain-Source ON Resistance.
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KMC7D0CN20C
S2G14
S2S13
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SSG4435
Abstract: No abstract text available
Text: SSG4435A P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TSSOP-8 8 RDS(ON) (mΩ) Max 7 6 5 27 @VGS = - 10V - 7A - 30V 42 @VGS = - 5V 1 2 3 50 @VGS = - 4.5V 4 D (1,5,8) FEATURES Super high density cell design for low RDS(ON). Rugged and reliable.
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SSG4435A
SSG4435
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Untitled
Abstract: No abstract text available
Text: Dual N-channel MOSFET common drain ELM18822BA-S •General description ■Features ELM18822BA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. • • • • • • Vds=20V Id=7A (Vgs=10V) Rds(on) < 21mΩ (Vgs=10V) Rds(on) < 24mΩ (Vgs=4.5V)
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ELM18822BA-S
ELM18822BA-S
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Mosfet
Abstract: SSF2814E
Text: SSF2814E 20V Dual N-Channel MOSFET DESCRIPTION The SSF2814E uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V
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SSF2814E
SSF2814E
SSF2810%
Mosfet
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smd transistor g1
Abstract: g1 smd transistor smd transistor S1 mosfet vgs 5v smd diode S2 g1 smd diode MOSFET TSSOP-8 dual n-channel smd transistor 7a G1 C smd MOSFET TSSOP-8
Text: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor KO8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)
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KO8822
00A/s
smd transistor g1
g1 smd transistor
smd transistor S1
mosfet vgs 5v
smd diode S2
g1 smd diode
MOSFET TSSOP-8 dual n-channel
smd transistor 7a
G1 C smd
MOSFET TSSOP-8
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MOSFET TSSOP-8 dual n-channel
Abstract: No abstract text available
Text: SSG6968N Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TSSOP-8 8 RDS(ON) (mΩ) Max 7 6 5 20 @VGS = 4.5V 28 @VGS = 2.5V 7A 20V 1 45 @VGS = 1.8V 2 3 4 D1 (1) D2 (8) FEATURES Super high density cell design for low RDS(ON). Rugged and reliable.
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SSG6968N
MOSFET TSSOP-8 dual n-channel
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Untitled
Abstract: No abstract text available
Text: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor SI8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)
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SI8822
30VGS
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ssg8
Abstract: SSG8206A 7A TSSOP-8
Text: SSG8206A Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 16V 7A TSSOP-8 8 RDS(ON) (m ) Max 7 6 5 20 @VGS = 4.0V 1 35 @VGS = 2.5V 2 3 4 D (1) D (8`) FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. TSSOP-8 package.
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SSG8206A
ssg8
SSG8206A
7A TSSOP-8
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MOSFET TSSOP-8 dual n-channel
Abstract: No abstract text available
Text: SSG8810A Common Drain Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V TSSOP-8 8 RDS(ON) (mΩ) Max ID (A) 7 6 5 20 @VGS = 4.5V 7A 20V 1 24 @VGS = 2.5V 2 3 4 D1 (1) D2 (8) FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable.
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SSG8810A
MOSFET TSSOP-8 dual n-channel
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SSG8822
Abstract: MOSFET TSSOP-8 MOSFET TSSOP-8 dual n-channel ssg8
Text: SSG8822 Common Drain Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V TSSOP-8 8 RDS(ON) (mΩ) Typ ID (A) 7 6 5 18 @VGS = 4.5V 7A 20V 1 24 @VGS = 2.5V 2 3 4 D1 (1) D2 (8) FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable.
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SSG8822
40pcs
SSG8822
MOSFET TSSOP-8
MOSFET TSSOP-8 dual n-channel
ssg8
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MOSFET TSSOP-8 dual n-channel
Abstract: No abstract text available
Text: SSG4918 Dual N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 8 RDS(ON) (m ) Max 7 6 5 23 @VGS = 10V 7A 30V TSSOP-8 1 43 @VGS = 4.5V 2 3 4 D (1) D (8`) FEATURES Super high density cell design for low RDS(ON) . Rugged and reliable. G (4) G (5)
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SSG4918
MOSFET TSSOP-8 dual n-channel
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