ATPA
Abstract: 7130SA100P 24l01 7C263/4-35C 7164S15Y cy9122-25 7133SA35J 7142sa55 7130sa55p cy2149-45c
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2147-35C CY7C147-35C CY7C147-45C CY7C147-35C CY91L22-35C CY7C122-35C CY2147-45C CY2147-35C CY7C148-35C CY7C148-25C+ CY91L22-45C CY93L422AC CY2147-45C CY7C147-45C CY7C148-45C CY7C148-35C
|
Original
|
CY2147-35C
CY7C147-35C
CY7C147-45C
CY91L22-35C
CY7C122-35C
CY2147-45C
CY7C148-35C
CY7C148-25C+
ATPA
7130SA100P
24l01
7C263/4-35C
7164S15Y
cy9122-25
7133SA35J
7142sa55
7130sa55p
cy2149-45c
|
PDF
|
CY7C1007D-10VXI
Abstract: CY7C107D CY7C107D-10VXI
Text: 7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with 7C107B/CY7C1007B • High speed — tAA = 10 ns • Low Active Power — ICC = 80 mA @ 10 ns • Low CMOS Standby Power The 7C107D and CY7C1007D are high-performance
|
Original
|
CY7C107D
CY7C1007D
CY7C107B/CY7C1007B
CY7C107D
CY7C1007D
83MHz,
66MHz
40MHz
100MHz,
CY7C1007D-10VXI
CY7C107D-10VXI
|
PDF
|
CY7C1007B
Abstract: CY7C107B
Text: 07B 7C107B CY7C1007B 1M x 1 Static RAM Features Writing to the devices is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).
|
Original
|
CY7C107B
CY7C1007B
CY7C107B
CY7C1007B
CY7C107B/CY7C1007B
|
PDF
|
8C710
Abstract: 7111-C
Text: 1 1 1 1 1 1 1 234562781 1 1 1 1 AEF8C812 58 9 9 9 ABCDE9759F7E9 9
|
Original
|
1234516789ABC82DEFC81E
84AECD
ABCDE9759F7
11111111111111111111111111111111111149AB1
436BD9F
EC1B717B7
7107CE
14E91EC1E
B17F8
E99701
8C710
7111-C
|
PDF
|
81c78
Abstract: 7C291 5962-8515505RX 27PC256-12 PAL164A 8464C 5C6408 72018 39C10B MACH110 cross reference
Text: Product Line Cross Reference CYPRESS 2147-35C 2147-45C 2147-45C 2147-45M+ 2147-55C 2147-55M 2148-35C 2148-35C 2148-35M 2148-45C 2148-45C 2148-45M 2148-45M+ 2148-55C 2148-55C 2148-55M 2149-35C 2149-35C 2149-35M 2149-45C 2149-45M 2149-45M 2149-55C 2149-55C 2149-55M
|
Original
|
2147-35C
2147-45C
2147-45M+
2147-55C
2147-55M
2148-35C
2148-35M
2148-45C
81c78
7C291
5962-8515505RX
27PC256-12
PAL164A
8464C
5C6408
72018
39C10B
MACH110 cross reference
|
PDF
|
transistor 107A equivalent
Abstract: CY7C1007 CY7C107
Text: 7C107 CY7C1007 1M x 1 Static RAM Features memory expansion is provided by an active LOW chip enable CE and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected. • High speed
|
Original
|
CY7C107
CY7C1007
transistor 107A equivalent
CY7C1007
CY7C107
|
PDF
|
transistor 107A equivalent
Abstract: CY7C107A
Text: fax id: 1058 1CY 7C10 7A PRELIMINARY 7C107A 1M x 1 Static RAM Features is provided by an active LOW chip enable CE and three-state drivers. The device has an automatic power-down feature that reduces power consumption by more than 65% when deselected.
|
Original
|
CY7C107A
transistor 107A equivalent
CY7C107A
|
PDF
|
MSM 6290
Abstract: msm 5562 27c256 intel 62c512 AP 2068 27C512 microchip 62256 57C256 27C512 SGS-THOMSON 27C512-150
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS 2147-35C 7C147-35C 27S03M 54S189M 7C170A-45M 7C170A-35M 2147-45C 2147-35C 27S07AC 7C190-25C 7C171A-35C 7C171A-25C 2147-45C 7C147-45C 27S07AM 7C190-25M 7C171A-45M 7C171A-35M+ 2147-45M+
|
Original
|
2147-35C
7C147-35C
27S03M
54S189M
7C170A-45M
7C170A-35M
2147-45C
27S07AC
7C190-25C
MSM 6290
msm 5562
27c256 intel
62c512
AP 2068
27C512 microchip
62256
57C256
27C512 SGS-THOMSON
27C512-150
|
PDF
|
EPM5128LC
Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Text: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C
|
Original
|
CY2148-35C
CY21L48-35C
CY7C168A-35C
CY7C168A-25C
5962-8871309XX
5962-89839112X
CY7C148-35C
CY7C168A-45M
CY7C168A-35M+
EPM5128LC
IDT CYPRESS CROSS REFERENCE clocks
epm5064lc-1
EPM5128LC-1
EPM5064LC
EPM5128LC-2
EPM5128GI
EPM5128JC-1
8464c
5962-8871309
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 7C107BN CY7C1007BN 1M x 1 Static RAM Features Functional Description The 7C107BN and CY7C1007BN are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable CE and three-state drivers. These devices have an
|
Original
|
CY7C107BN
CY7C1007BN
CY7C1007BN
CY7C107BN/CY7C1007BN
|
PDF
|
tPD10
Abstract: No abstract text available
Text: 7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Features Functional Description[1] • Pin- and function-compatible with 7C107B/CY7C1007B • High speed — tAA = 10 ns • Low Active Power — ICC = 60 mA @ 10 ns • Low CMOS Standby Power • • • •
|
Original
|
CY7C107D
CY7C1007D
CY7C107B/CY7C1007B
28-pin
400-Mil
CY7C1007D
300-Mil
tPD10
|
PDF
|
CY7C107B-25VC
Abstract: CY7C1007B CY7C107B
Text: 07B 7C107B CY7C1007B 1M x 1 Static RAM Features Writing to the devices is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).
|
Original
|
CY7C107B
CY7C1007B
CY7C107B
CY7C1007B
CY7C107B/CY7C1007B
CY7C107B-25VC
|
PDF
|
CY7C107B-15VC
Abstract: CY7C1007B CY7C107B
Text: 7C107B 7C107B CY7C1007B 1M x 1 Static RAM Features Writing to the devices is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19).
|
Original
|
1CY7C107B
CY7C107B
CY7C1007B
CY7C107B
CY7C1007B
CY7C107B-15VC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 7C107D CY7C1007D 1-Mbit 1M x 1 Static RAM Functional Description [1] Features • Pin- and function-compatible with 7C107B/CY7C1007B ■ High speed The 7C107D and CY7C1007D are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy
|
Original
|
CY7C107D
CY7C1007D
CY7C107B/CY7C1007B
CY7C107D
CY7C1007D
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: 7C107A PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed — tAA = 12 ns T he C Y 7C107A is a high-perform ance C M O S static R A M organized as 1,048,576 w ords by 1 bit. Easy m em ory expansion is p rovided by an active L O W chip enable
|
OCR Scan
|
CY7C107A
7C107A
15DMB
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 7C107A: 11 -2 5 -9 1 Revision: Thursday, February 18,1993 MAR S 3 1993 = j= CYPRESS SEMICONDUCTOR 1M x 1 Static RAM Features Functional Description • Highspeed The 7C107A is a high-performance CMOS static RAM organized as 1,048,576 words by 1 bit. Easy memory expansion is
|
OCR Scan
|
7C107A:
CY7C107A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: fax id: 1058 7C107 CY7C1007 w / C Y P R E S S 1M x 1 Static RAM memory expansion is provided by an active LOW chip enable CE and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected.
|
OCR Scan
|
CY7C107
CY7C1007
|
PDF
|
Untitled
Abstract: No abstract text available
Text: '/ 7C107A PRELIM INARY cypress IM x 1 Static RAM F eatu res F u n ctio n a l D escrip tio n • I'htr CY7C1U7'\ is a high-perform ance CM OS static RAM organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by ai active LOW chip enable
|
OCR Scan
|
CY7C107A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 7C107A PRELIMINARY CYPRESS SEMICONDUCTOR Features Functional Description • High speed — tAA = 12 ns • CMOS for optimum speed/power • Low active power — 825 mW • Low standby power — 275 mW • 2.0V data retention — 100 n\V • Automatic power-down when
|
OCR Scan
|
CY7C107A
CY7C107A
CY7C107A-25PC
CY7C107A--
25DMB
CY7C107A-35DM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet January 1992 AT&T a Microelectronics 7C107 High-Speed CMOS SRAM 1 Mbit 1 Mbit x 1 , Separate I/O Features • Low-power operation —Active: 635 mW maximum at 25 ns — Standby (typical): 110 mW (TTL inputs); 11 mW (CMOS inputs)
|
OCR Scan
|
ATT7C107
--28-pin,
-28-pin,
ATT7C107
7C107
28-Pin,
ATT7C107P-25
ATT7C107J-25
|
PDF
|
SOJ-28
Abstract: CY7C1007 CY7C107
Text: C Y 7 C 1 0 7 V CYPRESS C Y 7 C 1 0 0 7 1M x 1 Static RAM Features memory expansion is provided by an active LOW Chip Enable CE and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected.
|
OCR Scan
|
CY7C107
CY7C1007
CY7C107
CY7C1007
SOJ-28
|
PDF
|
A12C
Abstract: CY7C107
Text: CYPRESS SEMICONDUCTOR 4bE D n 250=^2 GG ObB GG fl Q C Y P -T'Ut'Z3-0 5 7C107 PRELIMINARY 'M CYPRESS SEMICONDUCTOR l M x l Static R/W RAM Features Functional Description • Highspeed — *AA = 25 ns • CMOS for optimum speed/power • Low active power — 825 mW
|
OCR Scan
|
D00b3G0
DV7C107
CY7C107
35LMB
T-46-23-05
CY7C107-45DC
CY7C107â
CY7C107-45PC
CY7C107-45VC
CY7C107-45DMB
A12C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CYPRESS 1M x 1 Static RAM Features F unctional D escription • High speed The 7C107A is a high-perform ance CM O S static R A M organized as 1,048,576 words by 1 bit. Easy m em ory expansion is provided by an active LO W chip enable CE and three-state drivers. The device
|
OCR Scan
|
CY7C107A
CY7C107A
DD14726
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 7C107 P R E L IM IN A R Y ’ ^ c ip R E S S 1M x 1 Static RAV RAM SEMICONDUCTOR Features Functional Description • H ig h s p e e d T h e C Y 7 C 1 0 7 is a h ig h -p e rfo rm a n c e C M O S s ta tic R A M o rg a n iz e d as 1,048,576 w o rd s by 1 b it. E a sy m e m o ry e x p a n sio n is
|
OCR Scan
|
CY7C107
|
PDF
|
