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    IRF150

    Abstract: IRF150 MOSFET IRF150 To3 package IRF-150 IRF150 on semi
    Text: 7964142 SAMSUNG SEMICONDUCTOR Tfl D e J 7Tti414E DD0SDÛ4 a f 98 D 0 5084 INC L' D T -SVIli N-CHANNEL POWER MOSFETS IRF150/151/152/153 FEATURES Low RDS on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Low input capacitance


    OCR Scan     		PDF 7Tti414E IRF150/151/152/153 IRF150 IRF151 IRF152 IRF153 00GS435 IRF150 MOSFET IRF150 To3 package IRF-150 IRF150 on semi

    D1377

    Abstract: TCA 965 BP KM424C256A
    Text: b4E D SAMSUNG ELEC TRONICS INC • CMOS VIDEO RAM KM424C256A GENERAL DESCRIPTION 256K X 4 Bit CMOS VIDEO RAM FEATURES • Dual Port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance range: Item -6 RAM access time tmc RAM access time (tCAc)


    OCR Scan     		PDF 0G13771 KM424C256A KM424C256A 256Kx4 28-PIN D1377 TCA 965 BP

    Untitled

    Abstract: No abstract text available
    Text: KM44V4000A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRA C tCAC tR C KM44V4000A/AL7ALL/ASL-6 60ns 15ns 110ns KM44V4000A/AUALL/ASL-7 70ns 20ns 130ns KM44V4000A/AL/ALL/ASL-8 80ns


    OCR Scan     		PDF KM44V4000A/AL/ALL/ASL KM44V4000A/AL7ALL/ASL-6 110ns KM44V4000A/AUALL/ASL-7 130ns KM44V4000A/AL/ALL/ASL-8 KM44V4000A/AL/ALL/ASL 150ns 24-LEAD

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC fc^E D • 7 R b m 4 5 DDlBlll 7T2 « S M Ö K KM41C4001A CMOS DRAM 4 M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 4 0 0 1 A is a CMOS high speed 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random A ccess Memory.


    OCR Scan     		PDF KM41C4001A 130ns 150ns 180ns DD132DS 18-LEAD 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: 7 9 6 4 1 4 2 SAM SUNG hfl S E M ICO N D U CTO R 9 8 D I N C _ DE I TTtiMlMS □□□SDflcl 1 050 8 9 d T -J ? N-CHANNEL POWER MOSFETS IRF220/221/222/223 FEA TU R ES • Low R d S o ii • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF IRF220/221/222/223 IRF220 IRF221 IRF222 IRF223 00GS435 F--13

    Untitled

    Abstract: No abstract text available
    Text: The information in this data sheet can change upon complete cahracterization and evaluation A A > IO C fA > IO C l\ U A U 4 o 3 |U 4 o 0 135MHz CMOS True-Color RAM PAC of this new product._ KDA0485 FEATURES ♦ 135,110, 85MHz Pixel Clock


    OCR Scan     		PDF 135MHz KDA0485 85MHz 64x64x2 256x8 84-Pin KDA0485/0486 KDA0485L-135 135MHz

    OA 91 diode

    Abstract: IRF220 IRF221 IRF222 5CH2 IRF223 8d050
    Text: 7964142 SAMSUNG hfl DE I S E M ICONDUCTOR T T t i Ml MS □□□S Df l ' ì 0 5 0 8 9 _ d T - 3 ? 9 8 D I N C _ N-CHANNEL POWER MOSFETS 1 IRF220/221/222/223 FEATURES Low R d S o i i Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF IRF220/221/222/223 IRF220 IRF221 IRF222 IRF223 OA 91 diode 5CH2 8d050

    44V4100

    Abstract: No abstract text available
    Text: KM44V4100BK CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a lamily ol 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


    OCR Scan     		PDF KM44V4100BK 16Mx4, 512Kx8) 7TL414E 44V4100