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    BDT65

    Abstract: bdt65c bdt64
    Text: BDT64;- 64A BDT64B; 64C PHILIPS INTERNATIONAL SbE D • 711002b 0043274 T1S MPHIN T -1 3 '7 / SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. T0-220 plastic envelope. NPN complements are BDT65,


    OCR Scan     		PDF BDT64 BDT64B; 711002b T0-220 BDT65, BDT65A, BDT65B BDT65C. 711D62b BDT65 bdt65c

    Untitled

    Abstract: No abstract text available
    Text: BD950; 952 BD954; 956 _ y v SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic TO-220 envelope. With their n-p-n complements BD949; 951; 953 and 955 they are intended for use in a wide range o f power amplifiers and for switching applications.


    OCR Scan     		PDF BD950; BD954; O-220 BD949; BD950 BD950 BD952. BD054

    philips TIP117

    Abstract: tip110 st TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
    Text: TIP115 TIP116 TIP117 PHILIPS INTERN A T I O N A L 5bE ]> • 7110Û5L 004355b SILICON DARLINGTON POWER TRANSISTORS 742 ■ PHIN T-33- 3 I P-N-P epitaxial-base transistors in monolithic Darlington circuit fo r audio output stages and general purpose am plifier and switching applications. T O -2 2 0 A B plastic envelope. N-P-N complements are


    OCR Scan     		PDF TIP115 TIP116 TIP117 00M3SSL O-220AB TIP110, TIP111 TIP112. philips TIP117 tip110 st TIP110 TIP112 TIP117

    Untitled

    Abstract: No abstract text available
    Text: Philips Component* BDV64F/64AF/64BF/64CF Datasheet status Product specification PNP silicon Darlington power transistors date of issue December 1990 PINNING - SOT199 DESCRIPTION PIN 1 2 3 PNP epitaxial base transistors in a m onolithic Darlington circu it fo r


    OCR Scan     		PDF BDV64F/64AF/64BF/64CF OT199 BDV65F/ 65AF/65BF/65CF. BDV64F BDV64AF BDV64BF BDV64CF bb53c 0034A00

    Untitled

    Abstract: No abstract text available
    Text: BDT62F; BDT62AF BDT62BF; BDT62CF SILICON DARLINGTON POWER TRANSISTORS PNP silicon darlington power transistors in a SOT 186 envelope with an electrically insulated mounting base. The devices are designed fo r audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT62F; BDT62AF BDT62BF; BDT62CF BDT63F, BDT63AF, BDT63BF BDT63CF. 003M70S

    N3BB

    Abstract: D952
    Text: BD950; 952 BD954; 956 J^ PHILIPS INTERNATIONAL SbE D • 711002b 004310Ô 3bb ■ P H I N T-33- n SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P transistors in a plastic T 0 -2 2 0 envelope. With their n-p-n complements BD949; 9 5 1 ; 9 5 3 and 9 5 5 they are intended fo r use in a w ide range of power amplifiers and fo r switching applications.


    OCR Scan     		PDF BD950; BD954; 711002b BD949; BD950i T--33--19 N3BB D952

    BDT64

    Abstract: darlington power transistor 10a ic 565 circuit diagram BDT65A BDT64B BDT65 BDT65B BDT65C 82326
    Text: BDT64;- 64A BDT64B; 64C J^ PHILIPS INTERNATIONAL SbE D • 7110fl2b 00L43274 T15 ■ PHIN ~ C -~ 3 3 - j ; SILICO N DARLINGTON POW ER T R A N SIST O R S PNP epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO -220 plastic envelope. N PN complements are BD T65,


    OCR Scan     		PDF BDT64 BDT64B; 7110fl2b 0Cm3274 O-220 BDT65, BDT65A, BDT65B BDT65C. darlington power transistor 10a ic 565 circuit diagram BDT65A BDT64B BDT65 BDT65C 82326

    BDT64AF

    Abstract: bdt64cr KIA 574 BDT64BF BDT64CF BDT64F BDT65AF BDT65CF BDT65F
    Text: BDT64F; BDT64AF J BPT64BF; BDT64CF SILICON DARLINGTON POWER TRANSISTORS PNP Silicon Darlington power transistors in a S0T186 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT64F; BDT64AF BDT64BF; BDT64CF OT186 BDT65F, BDT65AF, BDT658F BDT65CF. BDT64F BDT64AF bdt64cr KIA 574 BDT64BF BDT64CF BDT65AF BDT65CF BDT65F

    BD240 Philips

    Abstract: BD240A BD239 BD239C BD240 BD240B BD240C
    Text: I I . N AMER PHILIPS/DISCRETE . BSE D • ‘ bb53131 Q ü n 3 â T b ■ • BD240; BD240A BD240B; BD240C T - 3 3 M 7 SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in output stages of audio and television*


    OCR Scan     		PDF bbS3i31 BD240; BD240A BD240B; BD240C BD239; BD239C, BD240 BD240 Philips BD239 BD239C BD240B BD240C