ic 1496 specifications
Abstract: 2SC4855 ITR07603 ITR07604 ITR07605 ITR07606 ITR07607 CE1M KT 1117
Text: Ordering number:ENN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : ⏐S21e⏐2=7.5dB typ
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ENN4759
2SC4855
S21e2
2SC4855]
ic 1496 specifications
2SC4855
ITR07603
ITR07604
ITR07605
ITR07606
ITR07607
CE1M
KT 1117
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN4759 NPN Epitaxial Planar Silicon Transistor 2SC4855 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7.5dB typ
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ENN4759
2SC4855
S21e2
2SC4855]
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions unit:mm 2059B [2SC4853] 0.425 • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz).
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ENN4578A
2SC4853
2059B
2SC4853]
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KT 819 transistor
Abstract: TRANSISTOR KT 838
Text: Ordering number:ENN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : S21e2=7dB typ (f=1GHz).
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ENN4579
2SC4854
S21e2
2018B
2SC4854]
KT 819 transistor
TRANSISTOR KT 838
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MARKING CN
Abstract: ic 4578 2SC4853 ITR07581 ITR07582 ITR07583 ITR07584 j200 transistor
Text: Ordering number:ENN4578A NPN Epitaxial Planar Silicon Transistor 2SC4853 Low-Voltage, Low-Current High-Frequency Amplifier Applications Package Dimensions unit:mm 2059B [2SC4853] 0.425 • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz).
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ENN4578A
2SC4853
2059B
2SC4853]
S21e2
MARKING CN
ic 4578
2SC4853
ITR07581
ITR07582
ITR07583
ITR07584
j200 transistor
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CE1M
Abstract: TRANSISTOR KT 838 KT 819 transistor 2SC4854 ITR07592 ITR07593 ITR07594 ITR07595 AX-9521
Text: Ordering number:ENN4579 NPN Epitaxial Planar Silicon Transistor 2SC4854 Low-Voltage, Low-Current High-Frequency Amplifier Applications Features Package Dimensions • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz).
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ENN4579
2SC4854
S21e2
2018B
2SC4854]
CE1M
TRANSISTOR KT 838
KT 819 transistor
2SC4854
ITR07592
ITR07593
ITR07594
ITR07595
AX-9521
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A1076
Abstract: ITR07582 ITR07583 ITR07585
Text: 2SC4853A Ordering number : ENA1076 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4853A Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • Low-voltage, low-current operation : fT=5GHz typ. VCE=1V, IC=1mA :⏐S21e⏐2=7dB typ (f=1GHz).
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2SC4853A
ENA1076
S21e2
A1076-5/5
A1076
ITR07582
ITR07583
ITR07585
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Untitled
Abstract: No abstract text available
Text: 2SC4853A Ordering number : ENA1076A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC4853A Low-Voltage, Low-Current High-Frequency Amplifier Applications Features • Low-voltage, low-current operation : fT=5GHz typ VCE=1V, IC=1mA : ⏐S21e⏐2=7dB typ (f=1GHz)
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2SC4853A
ENA1076A
A1076-8/8
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Untitled
Abstract: No abstract text available
Text: HMC-C013 10W PA Module, 800 - 2000 MHz The HMC-C013 is a 10 Watt Power Amplifier Module suitable for Cellular/3G repeaters, wireless data, laboratory use and ATE applications. The unit includes DC power sequencing, enable and conditioning for load mismatch protection. Thermal protection/fault circuitry
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HMC-C013
HMC-C013
CDMA2000
800MHz
1000MHz
1900MHz
2000MHz
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j200 transistor
Abstract: 2SC4853 FH104 of transistor C 4908 800- 2000mhz amplifier ic
Text: Ordering number:ENN6218 NPN Epitaxial Planar Silicon Composite Transistor FH104 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2149 [FH104] 0.25 6 5 4 E2 1 2 0.65 2.0 C1 TR2 E1 3 1 : Collector1 2 : Emitter1
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ENN6218
FH104
FH104]
FH104
2SC4853
j200 transistor
of transistor C 4908
800- 2000mhz amplifier ic
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j200 transistor
Abstract: 2SC4853 FH104 of transistor C 4908 62183 transistor c 3228 MARKING e1v
Text: Ordering number:ENN6218 NPN Epitaxial Planar Silicon Composite Transistor FH104 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2149 [FH104] 0.25 6 5 4 E2 1 2 0.65 2.0 C1 TR2 E1 3 1 : Collector1 2 : Emitter1
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ENN6218
FH104
FH104]
FH104
2SC4853
j200 transistor
of transistor C 4908
62183
transistor c 3228
MARKING e1v
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j200 transistor
Abstract: it00307 j200 ON Semiconductor TA-1706 A 933 S transistors 2SC4867 FH103 N0199TS ic 741 equivalent IT00303
Text: Ordering number:ENN6217 NPN Epitaxial Planar Silicon Composite Transistor FH103 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2149 [FH103] 0.25 6 5 4 E2 1 2 0.65 2.0 C1 3 Tr2 E1 1 : Collector1 2 : Emitter1
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ENN6217
FH103
FH103]
FH103
2SC4867,
j200 transistor
it00307
j200 ON Semiconductor
TA-1706
A 933 S transistors
2SC4867
N0199TS
ic 741 equivalent
IT00303
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TA-1706
Abstract: 2SC4867 FH103 TA1706
Text: Ordering number:ENN6217 NPN Epitaxial Planar Silicon Composite Transistor FH103 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2149 [FH103] 0.25 6 5 4 E2 1 2 0.65 2.0 C1 3 Tr2 E1 1 : Collector1 2 : Emitter1
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ENN6217
FH103
FH103]
FH103
2SC4867,
TA-1706
2SC4867
TA1706
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transistor 8026
Abstract: 2SC5245 FH105
Text: Ordering number:ENN6219 NPN Epitaxial Planar Silicon Composite Transistor FH105 High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Package Dimensions unit:mm 2160 [FH105] 0.25 6 5 4 E2 1 2 0.65 2.0 Tr2 C1 B2 1 : Collector1 2 : Base2 3 : Collector2
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ENN6219
FH105
FH105]
FH105
2SC5245,
transistor 8026
2SC5245
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FH102A
Abstract: 2SC5226A ITR10753 ITR10754 ITR10755 ITR10756 ZO 607 transistor
Text: FH102A Ordering number : ENA1125 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency
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FH102A
ENA1125
FH102A
2SC5226A,
A1125-6/6
2SC5226A
ITR10753
ITR10754
ITR10755
ITR10756
ZO 607 transistor
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Untitled
Abstract: No abstract text available
Text: FH102A Ordering number : ENA1125 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency
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ENA1125
FH102A
FH102A
2SC5226A,
A1125-6/6
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Untitled
Abstract: No abstract text available
Text: FH102A Ordering number : ENA1125 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency
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FH102A
ENA1125
FH102A
2SC5226A,
A1125-6/6
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FH105A
Abstract: AMPLIFIER SANYO DC 303 SANYO DC 303 2SC5245A j200 ON Semiconductor
Text: FH105A Ordering number : ENA1126 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH105A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency
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FH105A
ENA1126
FH105A
2SC5245A,
A1126-6/6
AMPLIFIER SANYO DC 303
SANYO DC 303
2SC5245A
j200 ON Semiconductor
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SC 708-4
Abstract: MCP6 Marking sanyo
Text: FH102A Ordering number : ENA1125A SANYO Semiconductors DATA SHEET FH102A NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting
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ENA1125A
FH102A
FH102A
2SC5226A,
A1125-8/8
SC 708-4
MCP6 Marking sanyo
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Untitled
Abstract: No abstract text available
Text: FH102A Ordering number : ENA1125A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Composite Transistor FH102A High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • • • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting
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FH102A
ENA1125A
FH102A
2SC5226A,
A1125-8/8
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Untitled
Abstract: No abstract text available
Text: RF2480 ',5 &7 48$'5$785( 02'8/$725 7\SLFDO $SSOLFDWLRQV • Dual-Band CDMA Base Stations • W-CDMA Base Stations • TDMA/TDMA-EDGE Base Stations • WLAN and WLL Systems • GSM-EDGE/EGSM Base Stations • TETRA Systems 5 3URGXFW 'HVFULSWLRQ The RF2480 is a monolithic integrated quadrature modulator IC capable of universal direct modulation for highfrequency AM, PM, or compound carriers. This low-cost
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RF2480
RF2480
800MHz
2500MHz.
Compone13
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741 IC circuit applications
Abstract: No abstract text available
Text: Ordering number:ENN4856 NPN Epitaxial Planar Silicon Transistor 2SC4867 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.2dB typ f=1GHz . · High gain : S21e2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ.
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ENN4856
2SC4867
S21e2
2059B
2SC4867]
741 IC circuit applications
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KT 819 transistor
Abstract: 2SC4868 ITR07675 ITR07676 ITR07677 ITR07678 TRANSISTOR KT 837
Text: Ordering number:ENN5043 NPN Epitaxial Planar Silicon Transistor 2SC4868 VHF to UHF Wide-Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=1.2dB typ f=1GHz . · High gain : ⏐S21e⏐2=13dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ.
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ENN5043
2SC4868
S21e2
2018B
2SC4868]
KT 819 transistor
2SC4868
ITR07675
ITR07676
ITR07677
ITR07678
TRANSISTOR KT 837
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Untitled
Abstract: No abstract text available
Text: MICRO DEVICES 2.5GHZ DIRECT QUADRATURE MODULATOR T y p ic a l A p p lic a tio n s • Digital Communications Systems • GSM, DCS 1800, JDC, D-AMPS Systems • Spread-Spectrum Communication Systems • Commercial and Consumer Systems • GMSK,QPSK, DQPSK, QAM Modulation
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RF2422
800MHz
2500MHz.
900MHz
2000MHz
2500MHz
1900MHz
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