Untitled
Abstract: No abstract text available
Text: Powered by MSJ 800 2V 800Ah MSJ 800 is a long service life battery up to 20 years expected life under normal float charge. As wit hall CSB batteries , all are rechargeable, highly efficient , leak proof and maintenance free. Specification Cells Per Unit Voltage Per Unit
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800Ah
10hr-rate
02/Cell
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Untitled
Abstract: No abstract text available
Text: Powered by MSV 800 2V 800Ah MSV 800 is a long service life battery up to 15 years expected life under normal float charge. As wit hall CSB batteries , all are rechargeable, highly efficient , leak proof and maintenance free. Specification Cells Per Unit Voltage Per Unit
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800Ah
10hr-rate
02/Cell
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800Ah
Abstract: ISO 1302 abs 0812
Text: Powered by MSV 800 2V 800Ah MSV 800 is a long service life battery up to 15 years expected life under normal float charge. As wit hall CSB batteries , all are rechargeable, highly efficient , leak proof and maintenance free. Specification Cells Per Unit Voltage Per Unit
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800Ah
10hr-rate
02/Cell
800Ah
ISO 1302
abs 0812
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Untitled
Abstract: No abstract text available
Text: VRLA Rechargeable Battery Measures Technology Values Innovation MSB-800 MSB-800FR (2V, 800Ah) APPLICATION FEATURES Sealed structure, no electrolyte leakage or spill. High performance alloy to secure corrosion-proof feature. Unique electrolyte system achieves maximum service life.
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MSB-800
MSB-800FR)
800Ah)
800Ah
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K d998 transistor
Abstract: lz 02 1068 D844 voltage regulator
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
K d998 transistor
lz 02 1068
D844 voltage regulator
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R5F5631
Abstract: R5F563NBDDFP A083H RX631 100-6 p86 A161H ir127 capacitor PMR 202 DM IPR200 c04f
Text: Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0100 Rev.1.00 Jun 13, 2012 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, Ethernet MAC, full-speed USB 2.0 host/function/OTG interface, various communications interfaces including CAN, 10- & 12-bit A/D
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RX63N
RX631
100-MHz
32-bit
12-bit
R01DS0098EJ0100
PLQP0176KB-A
PLQP0144KA-A
R5F5631
R5F563NBDDFP
A083H
100-6 p86
A161H
ir127
capacitor PMR 202 DM
IPR200
c04f
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KFG2G16Q2A
Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
Text: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFG2G16Q2A-DEBx)
KFH4G16Q2A-DEBx)
KFG2G16Q2A
KFH4G16Q2A
80x11
KFG2G16Q2A)
KFH4G16Q2A)
KFG2G16Q2A
0307h
0719h
63FBGA
KFG2G16
onenand
oneNand flash
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63FBGA
Abstract: KFG1G16Q2B onenand
Text: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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KFG1G16Q2B-DEBx)
KFG1G16Q2B
80x11
KFG1G16x2B)
63FBGA
KFG1G16Q2B
onenand
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Untitled
Abstract: No abstract text available
Text: Features Datasheet RX64M Group Renesas MCUs R01DS0173EJ0100 Rev.1.00 Jul 31, 2014 120-MHz 32-bit RX MCU, on-chip FPU, 240 DMIPS, up to 4-MB flash memory, 512-KB SRAM, various communications interfaces including IEEE 1588-compliant Ethernet MAC, full-speed USB 2.0 with battery charging, SD host interface optional , quad SPI, and CAN, 12-bit A/D
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RX64M
R01DS0173EJ0100
120-MHz
32-bit
512-KB
1588-compliant
12-bit
PLQP0176KB-A
PLQP0144KA-A
PLQP0100KB-A
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R5F51115AGFL
Abstract: R5F51113ADNF R5F51113ADFM
Text: Datasheet RX111 Group Renesas MCUs 32 MHz 32-bit RX MCUs, 50 DMIPS, up to 512 Kbytes of flash memory, USB 2.0 full-speed host/function/OTG, up to 6 comms channels, 12-bit A/D, 8-bit D/A, RTC R01DS0190EJ0120 Rev.1.20 Sep 29, 2014 Features • 32-bit RX CPU core
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RX111
32-bit
12-bit
R01DS0190EJ0120
64-bit
32-bit
R5F51115AGFL
R5F51113ADNF
R5F51113ADFM
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Untitled
Abstract: No abstract text available
Text: User’s Manual 32 Cover RX630 Group User’s Manual: Hardware RENESAS 32-Bit MCU RX Family / RX600 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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RX630
32-Bit
RX600
R01UH0040EJ0160
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Untitled
Abstract: No abstract text available
Text: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended
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OneNAND256
KFG5616x1A-xxB6)
KFG5616Q1A-DEB6
67FBGA
KFG5616Q1A-PEB6
256Mb
48TSOP1
KFG5616D1A-DEB6
KFG5616D1A-PEB6
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Samsung oneNand Mux
Abstract: samsung 1Gb nand flash SAMSUNG 256Mb NAND Flash Qualification Report KFM1216Q2M 48FBGA 8017h 2112b 1001Ah 803FH samsung 2GB Nand flash 121 pins
Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND512 KFM1216Q2M 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15th, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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MuxOneNAND512
KFM1216Q2M)
MuxOneNAND512
KFM1216Q2M
48FBGA
512Mb
Samsung oneNand Mux
samsung 1Gb nand flash
SAMSUNG 256Mb NAND Flash Qualification Report
KFM1216Q2M
8017h
2112b
1001Ah
803FH
samsung 2GB Nand flash 121 pins
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Untitled
Abstract: No abstract text available
Text: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFXXX16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFM1G16Q2A-DEBx)
KFN2G16Q2A-DEBx)
KFXXX16Q2A
80x11
KFG1G16Q2A)
KFN2G16Q2A)
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IN329
Abstract: No abstract text available
Text: 19-3384; Rev 1; 9/04 KIT ATION EVALU LE B A IL A AV EEPROM-Programmable Hex/Quad Power-Supply Sequencers/Supervisors with ADC The MAX6870/MAX6871 EEPROM-configurable, multivoltage supply sequencers/supervisors monitor several voltage detector inputs, two auxiliary inputs, and four
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MAX6870/MAX6871
MAX6870
MAX6871
MAX6870EVC
MAX6870ETJ
21-0144F
T3277-2*
MAX6870ETJ-T
MAX6870ETJ+
IN329
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Untitled
Abstract: No abstract text available
Text: OMAP5912 Applications Processor Data Manual Literature Number: SPRS231E December 2003 − Revised December 2005 PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include
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OMAP5912
SPRS231E
SPRS231D
SPRS231E.
289-ball
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SLC NAND endurance 100k
Abstract: No abstract text available
Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0
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KFM1G16Q2M-DEB6)
KFN2G16Q2M-DEB6)
KFM1G16Q2M-DEB6
KFN2G16Q2M-DEB6
63FBGA
SLC NAND endurance 100k
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samsung 2GB Nand flash 121 pins
Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1
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KFM1G16Q2M-DEB6)
KFN2G16Q2M-DEB6)
KFM1G16Q2M-DEB6
KFN2G16Q2M-DEB6
63FBGA
samsung 2GB Nand flash 121 pins
samsung 2GB Nand flash TOGGLE
sensing nand flash memory SAMSUNG Electronics
Toggle DDR NAND flash
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022AH
Abstract: No abstract text available
Text: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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KFG1G16Q2B-DEBx)
KFG1G16Q2B
80x11
KFG1G16x2B)
022AH
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4GB MLC NAND
Abstract: SAMSUNG NAND Flash MLC
Text: MuxOneNAND2G KFM2G16Q2M-DEBx MuxOneNAND4G(KFN4G16Q2M-DEBx) Preliminary FLASH MEMORY KFM2G16Q2M KFN4G16Q2M 2Gb MuxOneNAND M-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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KFM2G16Q2M-DEBx)
KFN4G16Q2M-DEBx)
KFM2G16Q2M
KFN4G16Q2M
80x11
KFM2G16Q2M)
KFN4G16Q2M)
4GB MLC NAND
SAMSUNG NAND Flash MLC
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Untitled
Abstract: No abstract text available
Text: Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0100 Rev.1.00 Jun 13, 2012 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, Ethernet MAC, full-speed USB 2.0 host/function/OTG interface, various communications interfaces including CAN, 10- & 12-bit A/D
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RX63N
RX631
R01DS0098EJ0100
100-MHz
32-bit
12-bit
PLQP0176KB-A
PLQP0144KA-A
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Untitled
Abstract: No abstract text available
Text: Datasheet RX62T Group Renesas MCUs R01DS0096EJ0100 Rev.1.00 Apr 20, 2011 100-MHz 32-bit RX MCUs, FPU, 165 DMIPS, 12-bit ADC 3 S/H circuits, double data register, amplifier, comparator : two units, 10-bit ADC one unit, the three ADC units are capable of simultaneous 7-ch. sampling, 100-MHz PWM (two three-phase complementary
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RX62T
R01DS0096EJ0100
100-MHz
32-bit
12-bit
10-bit
IEEE-754
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PIC16 example sleep
Abstract: pic16f1507 PIC16LF1507
Text: PIC16 L F1507 PIC16(L)F1507 Memory Programming Specification 1.1.2.1 This document includes the programming specifications for the following devices: • PIC16F1507 1.0 • PIC16LF1507 OVERVIEW The PIC16(L)F1507 devices can be programmed using either the high-voltage In-Circuit Serial Programming
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PIC16
F1507
F1507
PIC16F1507
PIC16LF1507
availa-6578-370
DS41573B-page
PIC16 example sleep
pic16f1507
PIC16LF1507
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R2AA04005F
Abstract: PA035C P30B06040 P50B0400 p50b07040 RS1A03 Q2AA10150
Text: M0007902B TYPE S RS485 GA1060 Serial Interface For Rotary Motor Instruction Manual EN GL I SH No Text on This Page. Preface ÌShipping the product This product in this instruction manual corresponds with the shipping regulations given in the Export Trade Control Ordinance Table 1, item 16 . When these products are exported by
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M0007902B
RS485
GA1060
4-03A/04
R2AA04005F
PA035C
P30B06040
P50B0400
p50b07040
RS1A03
Q2AA10150
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