VQ1000P
Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25
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vn10ke
vn10le
to-52
vn2406m
vn2410m
VW1706M
vn1710m
vn1206m
vn1210m
vn0808m
VQ1000P
VN10L
siliconix VN10KM
VN0610L
VN10KE
VN10KM
VN10LE
VN10LM
VN2222L
VQ1000J
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VN0300M
Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25
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vn10ke
vn10le
to-52
vn2406m
vn2410m
VW1706M
vn1710m
vn1206m
vn1210m
vn0808m
VN0300M
siliconix VN10KM
VN0606M
25XX
VN0300D
VP1001P
VQ1001J
VQ3001J
VQ3001P
VQ7254J
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757N logarithmic amplifier analog devices
Abstract: AD574JD 757N li log 757P
Text: □ ANALOG DEVICES 6-Decade, High Accuracy Log Ratio Amplifiers MODEL 757N, 757P FEATU RES 6 Decade Operation — 1 n A to 1 m A 1/2% Log Conformity — 10nA to 10l juA Symmetrical F E T Inputs Voltage or Current Operation Temperature Compensated A P P L IC A T IO N S
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Untitled
Abstract: No abstract text available
Text: RFK25N18, RFK25N20 Semiconductor Data Sheet October 1998 25A, 180V and 200V, 0.150 Ohm, N-Channel Power MOSFETs File Number 1500.3 Features • 25A, 180V and 200V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such
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RFK25N18,
RFK25N20
TA09594.
RFK25N18
-204AE
AN7254
AN7260.
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IRF9640
Abstract: No abstract text available
Text: H AFRFRIS S E M I C O N D U C T O R IRF9640, IRF9641, IRF9642, IRF9643, RF1S9640, RF1S9640SM -9A and -11 A, -150V and -200V, 0.5 and 0.7 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -9A a n d -11 A,-150V and-200V These are P-Channel enhancem ent mode silicon-gate
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IRF9640,
IRF9641,
IRF9642,
IRF9643,
RF1S9640,
RF1S9640SM
-150V
-200V,
and-200V
IRF9640
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VP0104
Abstract: VP0109 VP0109ND TELEDYNE VP0104N3 VP0104ND VP0106 VP0106N3 VP0106ND VP0109N3
Text: 2fi£ D T E LE DY NE COMPONENTS • S11?bQd GD0b4S2 - d l T-29-25 VP0104, VP0106 VP0109 SEMICONDUCTOR P-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs ORDERING INFORMATION TO-22CAA TO-92 Plastic Package VP0104N3 VP0104ND -40V, 8.0 ohm
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T-29-25
VP0104,
VP0106
VP0109
O-22CAA
VP0104N3
VP0106N3
VP0109N3
VP0104ND
VP0106ND
VP0104
VP0109
VP0109ND
TELEDYNE
VP0109N3
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Untitled
Abstract: No abstract text available
Text: H a r r IRFP250, IRFP251, IRFP252, IRFP253 i s s e m i c o n d u c t o r 27 A and 33A, 150V and 200V, 0.085 and 0.12 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 33A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRFP250,
IRFP251,
IRFP252,
IRFP253
gatFP250,
RFP252,
RFP253
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Untitled
Abstract: No abstract text available
Text: P *3 3 S IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRFR220,
IRFR221,
IRFR222,
IRFU220,
IRFU221,
IRFU222
RFR220,
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rf1s644s
Abstract: No abstract text available
Text: HARRIS S E M I C O N D U C T O R IRF644, IRF645, IRF646, IRF647, RF1S644, RF1S644SM 13A and 14A, 250V and 275V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 13A and 14A, 250V and 275V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRF644,
IRF645,
IRF646,
IRF647,
RF1S644,
RF1S644SM
TA17423E
RF644,
IRF645
rf1s644s
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C5651
Abstract: S56S
Text: High Performance Dual Channel Current Mode Controllers with ENABLE D escription l ’ho C S - 5 6 5 1 /C S -5 6 6 I are high pe r formance, fixed frequency, dual cu r rent m ode controllers specifically designed for O ff-Lin e and DC' to I X ’ converter applications. T hey offer
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16LSO
S-5651
CS-5651C
DVV16
S-56S11-I5W
i66lC
C5651
S56S
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Untitled
Abstract: No abstract text available
Text: calodlc High Speed DMOS N-Channel Switch CORPORATION SD403 FEATURES DESCRIPTION • • • • The Calogic SD403 is an N-Channel Enhancement-Mode Lateral DMOS FET. This product has very low capacitance, Crss < 0.4pf typical allowing for high speed switching (tr 1ns).
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SD403
SD403
19mmhos)
M4322
-80jiSec
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29V040
Abstract: No abstract text available
Text: S G S -1 H 0 M S 0 N 6 fflD ^©HlLll g'ìnE(S R!lfl(gi M29V040 LOW VOLTAGE SINGLE SUPPLY 4 Megabit (512K x 8, Sector Erase) FLASH MEMORY PRODUCT PREVIEW FAST ACCESS TIME: 120ns 3.3V ± 0.3V SUPPLY VOLTAGE for PROGRAM and ERASE OPERATIONS 3.3V ± 0.3V SUPPLY VOLTAGE in READ
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M29V040
120ns
TSOP32
TSOP32
29V040
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L1N08LE
Abstract: Rlp1N08le
Text: RLP1N08LE S e m ic o n d u c to r April 1999 Data Sheet File Num ber 2252.3 Features 1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET • 1A, 80V T he R LP 1N 08L E is a s e m i-sm a rt m on olithic po w e r circu it w h ich in co rp o ra te s a lateral b ipo lar transistor, tw o resistors,
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RLP1N08LE
750i2
11E-3
23E-5)
54E-3
1e-30
32E-10
L1N08LE
Rlp1N08le
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2SK2808-01MR
Abstract: No abstract text available
Text: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2808-01 MR - SPÊC.NO. Fuji Electric CoMLtd. This Specification is subject to change without notice. DATE ' NAME APPROVED Fuji Electric Co.,Ltd. CHECKED I ' ' I DWG. NO. D RA W N / 1/0 Y 0257 -R -00 4a
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2SK2808-01MR
0257-R-004a
To-220F
0257-R-003a
0257-R-003a
2SK2808-01MR
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IRFP460
Abstract: No abstract text available
Text: S IRFP460, IRFP462 Semiconductor y 20A and 17A, 500V, 0.27 and 0.35 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 20A and 17A, 500V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFP460,
IRFP462
IRFP460
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IFR320
Abstract: No abstract text available
Text: w vys S IRF320, IRF321, IRF322, IRF323 Semiconductor y y 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRF320,
IRF321,
IRF322,
IRF323
RF322,
IFR320
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18P06P
Abstract: Q67040-S4189
Text: SPD 18P06P SPU 18P06P Preliminary Data SIPMOS Small-Signal-T ransistor Features • P Product Summary Channel • Enhancement mode • Avalanche rated ^DS Drain-Source on-state resistance ^bs on 0.13 -18.6 b Continuous drain current V -60 Drain source voltage
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18P06P
SPD18P06P
P-T0252
Q67040-S4189
SPU18P06P
P-T0251
Q67040-S4192
G133L
18P06P
Q67040-S4189
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Untitled
Abstract: No abstract text available
Text: H a r r IRFP450, IRFP451, IRFP452, IRFP453 i s s e m i c o n d u c t o r 12A and 14A, 450V and 500V, 0.4 and 0.5 Ohm, N-Channel Power MOSFETs January 1998 Description Features 12A and 14A, 450V and 500V High Input Impedance These are N-Channel enhancement mode silicon gate
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IRFP450,
IRFP451,
IRFP452,
IRFP453
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schematic diagram 12v ac regulator
Abstract: No abstract text available
Text: Ul ILAk!_ TECHNOLOGY LT1Q36M/LT1036C Logic Controlled Regulator FCRTUR6S D€SCAIPTIOn • Two Regulated Outputs +12V at 3A +5Vat75mA ■ 2% Output Voltage Tolerance ■ 60dB Ripple Rejection ■ 0.7% Load Regulation ■ TTL and CMOS Compatible Logic Control
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5Vat75mA
LT1Q36M/LT1036C
LT1036
90VAC-140VAC
LT1036M/LT1036C
LT1036C
LT1036M
LT1036C
schematic diagram 12v ac regulator
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irf9530
Abstract: irf9532 JEDEC TO-263A IRF9531
Text: H A F R F R IS S E M I C O N D U C T O R IRF9530, IRF9531, IRF9532, IRF9533, RF1S9530, RF1S9530SM 10A and -12A, -80V and -100V, 0.3 and 0.4 Ohm, P-Channel Power MOSFETs January 1998 Features Description • -10A and -12A, -80V and -100V These are P-Channel enhancement mode silicon gate
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IRF9530,
IRF9531,
IRF9532,
IRF9533,
RF1S9530,
RF1S9530SM
-100V,
IRF9532
irf9530
JEDEC TO-263A
IRF9531
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034q
Abstract: Thermal Resistance vs. Mounting Pad Area TB370 AN7254 AN7260 ITF86110DK8T MS-012AA
Text: IT F 8 6 110 D K 8 T in t e r r ii J a n u a ry . m i Data Sheet 7.5A, 30V, 0.025 Ohm, Dual N-Channel, Logic Level, Power MOSFET File Number 4807.2 Features • Ultra Low On-Resistance ‘ Packaging r D S O N = 0.025£2, 10V V Gs = ‘ rDS(ON) = 0.034£2, VGs = 4.5V
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ITF86110DK8T
MS-012AA)
MS-012AA
330mm
EIA-481
034q
Thermal Resistance vs. Mounting Pad Area
TB370
AN7254
AN7260
ITF86110DK8T
MS-012AA
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E43 SHUNT REGULATOR
Abstract: CS-3865CDW16 CS-3865CN16
Text: CS-3865C H igh Performance D ual Channel Current M ode Controller w ith ENABLE D escription T h e CS-3865C is a h ig h p e rfo r m an ce, fix ed freq u e n cy , d u a l c u r re n t m o d e co n tro lle r. It is u se d in O ff-L ine a n d D C to D C co n v e rte r
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CS-3865C
16LSO
CS-3865CN16
CS-3865CDW16
20b7SSb
00D3EMS
E43 SHUNT REGULATOR
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st10 Bootstrap
Abstract: No abstract text available
Text: ST10F163 16-bit MCU with 128KByte Flash Memory DATA SHEET • High performance CPU ■ High performance 16-bit CPU with 4-stage pipeline ■ 80ns instruction cycle time @ 25MHz CPU clock ■ 400 ns multiplication 1 6 x 1 6 bits ■ 800 ns division (32 /1 6 bit)
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ST10F163
16-bit
128KByte
25MHz
st10 Bootstrap
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IA17
Abstract: No abstract text available
Text: / T 7 S G S -1H 0M S 0N M29W004T *• 7 /. HBSBEHllgUMWlIgg_ M29W004B 4 Mb x8, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY ■ 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME: lO^is typical
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M29W004T
M29W004B
100ns
IA17
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