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Infineon Technologies AG IPD180N10N3GATMA1 MOSFET N-CH 100V 43A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD180N10N3GATMA1	Reel	5,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.4515	Buy Now
Avnet Americas	IPD180N10N3GATMA1	Reel		16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	IPD180N10N3GATMA1		11,687			1 $0.65 10 $0.642 100 $0.539 1000 $0.452 10000 $0.451	Buy Now
Bristol Electronics	IPD180N10N3GATMA1		324			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	IPD180N10N3GATMA1				1	1 $0.5017 10 $0.5017 100 $0.4716 1000 $0.4264 10000 $0.4264	Buy Now

Chip1Stop	IPD180N10N3GATMA1	Cut Tape	2,273			1 - 10 $0.869 100 $0.58 1000 $0.421 10000 $0.421	Buy Now
EBV Elektronik	IPD180N10N3GATMA1			17 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	IPD180N10N3GATMA1		23,700			1 - 10 - 100 $0.6683 1000 $0.5174 10000 $0.5174	Buy Now
Infineon Technologies AG ISZ080N10NM6ATMA1 TRENCH >=100V PG-TSDSON-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ISZ080N10NM6ATMA1	Reel	5,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.67225	Buy Now
Mouser Electronics	ISZ080N10NM6ATMA1		8,262			1 $1.95 10 $1.34 100 $0.994 1000 $0.718 10000 $0.672	Buy Now
Newark	ISZ080N10NM6ATMA1	Cut Tape	12,340		1	1 $0.594 10 $0.594 100 $0.594 1000 $0.594 10000 $0.594	Buy Now
Chip1Stop	ISZ080N10NM6ATMA1	Cut Tape	9,622			1 $1.45 10 $1.03 100 $0.728 1000 $0.642 10000 $0.582	Buy Now
EBV Elektronik	ISZ080N10NM6ATMA1			13 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc IXTP180N10T MOSFET N-CH 100V 180A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP180N10T	Tube	3,040		1	1 $5.35 10 $5.35 100 $3.3128 1000 $3.3128 10000 $3.3128	Buy Now
Littelfuse Inc IXTA80N10T MOSFET N-CH 100V 80A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTA80N10T	Tube	2,455		1	1 $4.03 10 $4.03 100 $4.03 1000 $1.731 10000 $1.731	Buy Now
Newark	IXTA80N10T	Bulk			300	1 - 10 - 100 $2.47 1000 $1.98 10000 $1.85	Buy Now
Diotec Semiconductor AG DI280N10TL MOSFET TOLL N 100V 0.002OHM 175C
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	DI280N10TL	Digi-Reel	1,904		1	1 $4.41 10 $3.066 100 $4.41 1000 $1.93988 10000 $1.93988	Buy Now
	DI280N10TL	Cut Tape	1,904		1	1 $4.41 10 $3.066 100 $4.41 1000 $1.93988 10000 $1.93988	Buy Now
Mouser Electronics	DI280N10TL		1,779			1 $4.41 10 $3.07 100 $2.27 1000 $1.94 10000 $1.93	Buy Now
TME	DI280N10TL				1	1 $3.31 10 $2.98 100 $2.36 1000 $2.23 10000 $2.23	Get Quote

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80N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
80N10 Abstract: 80N10Q Text: HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q VDSS ID25 = 100 V = 80 A = 15 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	PDF	80N10Q 200ns O-247 80N10 80N10Q
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFR 80N10Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 100 V = 76 A = 15 mW Preliminary Data Sheet Symbol Test Conditions	Original	PDF	80N10Q ISOPLUS247
smd marking 58a Abstract: 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A Text: 80N10L 80N10L SIPMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated VDS Package Ordering Code Marking 80N10L PG-TO220-3-1 Q67042-S4173 80N10L	Original	PDF	SPI80N10L SPP80N10L PG-TO262-3-1 PG-TO220-3-1 Q67042-S4173 80N10L smd marking 58a 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A
80N10 Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	PDF	80N10 ISOPLUS220TM 728B1 123B1 728B1 065B1 80N10
80N10 Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	PDF	ISOPLUS220TM 80N10 728B1 123B1 065B1 80N10
80N10 Abstract: to-268 Text: HiPerFETTM Power MOSFETs VDSS = 100 V = 80 A ID25 Ω RDS on = 12.5 mΩ IXFH 80N10 IXFT 80N10 N-Channel Enhancement Mode Avalanche Rated, High dv/dt trr ≤ 200 ns Preliminary data sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR VGS Maximum Ratings	Original	PDF	80N10 O-247 O-268 O-268 80N10 to-268
80N10Q Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q Q-Class VDSS ID25 RDS on trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	PDF	80N10Q 80N10Q 200ns O-247 O-268 O-268
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFR 80N10Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns = 100 V = 76 A = 15 mW RDS(on) Preliminary Data Sheet Symbol Test Conditions	Original	PDF	80N10Q ISOPLUS247
ISOPLUS247 Abstract: 80N10Q E153432 80N10 Text: HiPerFETTM Power MOSFETs IXFR 80N10Q TM ISOPLUS247 , Q-Class Electrically Isolated Back Surface VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt trr £ 200 ns RDS(on) = 100 V = 76 A = 15 mW Preliminary Data Sheet Symbol Test Conditions	Original	PDF	80N10Q ISOPLUS247 247TM E153432 ISOPLUS247 80N10Q E153432 80N10
80N10 Abstract: 4800 mosfet mosfet 4800 Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	PDF	80N10 ISOPLUS220TM 80lse 80N10 4800 mosfet mosfet 4800
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFH 80N10Q IXFT 80N10Q VDSS ID25 = 100 V = 80 A = 15 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	PDF	80N10Q 80N10Q 200ns O-247 O-268 O-268AA
80N10 Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION HiPerFETTM MOSFET IXFC 80N10 VDSS ID25 RDS on trr ISOPLUS220TM Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	PDF	ISOPLUS220TM 80N10 220TM 80N10
smd marking 58a Abstract: 80N10L SPP80N10L SMD marking code 58A SPB80N10L SPI80N10L TP 80N10 SPP80N1 Text: Preliminary data 80N10L 80N10L,80N10L SIPMOS Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated VDS P-TO262-3-1 100 V RDS on 14 m ID 80 A P-TO263-3-2	Original	PDF	SPI80N10L SPP80N10L SPB80N10L P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP80N10L Q67042-S4173 80N10L smd marking 58a 80N10L SMD marking code 58A SPB80N10L SPI80N10L TP 80N10 SPP80N1
transistor 12n60c Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design	Original	PDF	ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET

C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158
smd marking 58a Abstract: 80N10L IEC61249-2-21 SPB80N10L SPP80N10L Text: 80N10L G SIPMOSΤΜPower-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated; Halogen-free according to IEC61249-2-21 Type Package 80N10L P-TO263-3 100 VDS V RDS on	Original	PDF	SPB80N10L P-TO263-3 IEC61249-2-21 80N10L SPP80N10L O263-3 smd marking 58a 80N10L IEC61249-2-21 SPB80N10L SPP80N10L
sd 20n60 Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80 Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
7n60b Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80 Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3	Original	PDF	AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Untitled Abstract: No abstract text available Text: 80N10F7, 80N10F7, 80N10F7-2, 80N10F7 N-channel 100 V, 0.008 Ω typ., 80 A STripFET VII DeepGATE™ Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220 Datasheet - production data Features TAB Order codes 3 1 DPAK 1 2 3 TO-220FP 80N10F7 80N10F7	Original	PDF	STD80N10F7, STF80N10F7, STH80N10F7-2, STP80N10F7 O-220FP, O-220 O-220FP STF80N10F7 STD80N10F7 STH80N10F7-2
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
C1146 Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	PDF	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	PDF	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
Untitled Abstract: No abstract text available Text: DIXYS Advanced Technical Information HiPerFET Power MOSFETs IXFH 80N10Q IXFT 80N10Q Q Class R DS on = 100 V = 80 A = 15 m f t t < 200 ns V DSS ^D25 rr N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances Symbol Test Conditions	OCR Scan	PDF	80N10Q 80N10Q O-247 O-268

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80N10 Search Results

80N10 Price and Stock

Infineon Technologies AG IPD180N10N3GATMA1

Infineon Technologies AG ISZ080N10NM6ATMA1

Littelfuse Inc IXTP180N10T

Littelfuse Inc IXTA80N10T

Diotec Semiconductor AG DI280N10TL

80N10 Datasheets Context Search

80N10

Untitled

smd marking 58a

80N10

80N10

80N10

80N10Q

Untitled

ISOPLUS247

80N10

Untitled

80N10

smd marking 58a

transistor 12n60c

C1162

smd marking 58a

sd 20n60

7n60b

Untitled

7N60B equivalent

C1146

PEF 24628

BCM 4336

Untitled