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    16mb HIGH-SPEED ASYNCHRONOUS SRAM

    Abstract: IBM041816CHLBC IBM043616CHLBC SA37T
    Text: . IBM043616CHLBC IBM041816CHLBC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M x 18 organization • Registered addresses, controls, and data-ins • CMOS technology • Burst mode of operation • Double-data-rate and single-data-rate synchronous mode of operation


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    IBM043616CHLBC IBM041816CHLBC 16mb HIGH-SPEED ASYNCHRONOUS SRAM IBM041816CHLBC IBM043616CHLBC SA37T PDF

    SA37T

    Abstract: cq 721 IBM041816CBLBC IBM043616CBLBC
    Text: . IBM043616CBLBC IBM041816CBLBC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M x 18 organization • Registered addresses, controls, and data-ins • CMOS technology • Burst mode of operation • Double-data-rate and single-data-rate synchronous mode of operation


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    IBM043616CBLBC IBM041816CBLBC SA37T cq 721 IBM041816CBLBC IBM043616CBLBC PDF

    SA10

    Abstract: SA11 SA13 SA14 SA16 IBM043641WLA
    Text: . Preliminary IBM041841WLAB IBM043641WLAB 128K X 36 & 256K X 18 SRAM Features • 128K x 36 or 256K x 18 Organizations • CMOS Technology • Synchronous Pipeline Mode Of Operation with Self-Timed Late Write • Single Ended Pseudo-PECL Clock compatible with LVTTL Levels


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    IBM041841WLAB IBM043641WLAB IBM041841WLAnformation SA10 SA11 SA13 SA14 SA16 IBM043641WLA PDF

    SA135T

    Abstract: IBM0418BSLAC IBM04364BSLAC IBM0436BSLAC SA10 SA11 SA16 SA165A SBWC
    Text: . IBM04184BSLAC IBM04364BSLAC Preliminary 256K x 18 & 128K x 36 Standard Write SRAM Features • 256K x 18 and 128K x 36 organizations • Registered outputs • CMOS technology • Asynchronous Output Enable and Power Down inputs • Synchronous pipeline mode of operation with


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    IBM04184BSLAC IBM04364BSLAC 75H4340 SA135T IBM0418BSLAC IBM04364BSLAC IBM0436BSLAC SA10 SA11 SA16 SA165A SBWC PDF

    16mb HIGH-SPEED ASYNCHRONOUS SRAM

    Abstract: IBM041816CXLBC IBM043616CXLBC
    Text: . IBM043616CXLBC IBM041816CXLBC 16Mb 512K x 36 & 1M x 18 SRAM Features • 512K x 36 or 1M x 18 organization • 2.5V power supply, 1.5 VDDQ • CMOS technology • Registered addresses, controls, and data-ins • Double-data-rate and single-data-rate synchronous modes of operation


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    IBM043616CXLBC IBM041816CXLBC 16mb HIGH-SPEED ASYNCHRONOUS SRAM IBM041816CXLBC IBM043616CXLBC PDF

    IBM04188CXLBC-25

    Abstract: IBM04368CXLBC
    Text: . IBM04368CXLBC IBM04188CXLBC 8Mb 256K x 36 & 512K x 18 SRAM Features • 256K x 36 or 512K x 18 organization • Registered addresses, controls and data-ins • CMOS technology • Burst mode of operation • Double-data-rate (DDR) and single-data-rate


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    IBM04368CXLBC IBM04188CXLBC IBM04188CXLBC-25 IBM04368CXLBC PDF

    9750H

    Abstract: No abstract text available
    Text: IBM041841RLAB IBM043641RLAB Prelim inary 1 2 8 K X 36 & 2 5 6 K X 1 8 S R A M Features • 128K x 36 or 256K x 18 Organizations • Registered Addresses, Write Enables, Synchro­ nous Select and Data Ins • CMOS Technology • Synchronous Pipeline Mode Of Operation with


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    IBM041841RLAB IBM043641RLAB IBM041841 IBM043641 9750H PDF

    Untitled

    Abstract: No abstract text available
    Text: I = = — = -= P re lim in a ry IBM041841WLAB IBM043641 WLAB 1 2 8 K X 36 & 2 5 6 K X 1 8 S R A M F ea tu r es • 128K x 36 or 256K x 18 Organizations Registered Addresses, Write Enables, Synchro­ nous Select and Data Ins • CMOS Technology • Synchronous Pipeline Mode Of Operation with


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    IBM041841WLAB IBM043641 IBM0418the PDF