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    Panasonic Electronic Components 35SEPF120M+T

    Aluminum Organic Polymer Capacitors 35volts 120uF ESR 18mohm
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    TTI 35SEPF120M+T Ammo Pack 2,500 500
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    KEMET Corporation A755KS567M1AAAE015

    Aluminum Organic Polymer Capacitors 10Vol 560uF RAD 5KHr ESR=15 mOhms
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI A755KS567M1AAAE015 Bulk 2,500 500
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    Kyocera AVX Components APA0809121M035R

    Aluminum Organic Polymer Capacitors 120UF 35V ESR=50
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    TTI APA0809121M035R Reel 2,000 500
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    Nichicon Corporation PCV1V121MCL2GS

    Aluminum Organic Polymer Capacitors 35V 120uF 105C AEC-Q200
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    TTI PCV1V121MCL2GS Reel 1,000 500
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    Nichicon Corporation LGU1K102MELZ

    Aluminum Electrolytic Capacitors - Snap In 80volts 1000uF 105c
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    TTI LGU1K102MELZ Bulk 650 25
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    840UA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GP01

    Abstract: TR-332 GP401 avalanche photodiodes
    Text: Low Power Consumption DC to HV DC Converters 0 to ±100 through 0 to ±6,000 VDC @ 1 Watt GP Series INPUT CURRENT NO LOAD INPUT CURRENT (FULL LOAD) OUTPUT *3 VOLTAGE OUTPUT*2 CURRENT GP01 <45mA <150mA 0 to +/-100V 10mA <0.75% GP02 <45mA <150mA 0 to +/-200V


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    150mA /-100V /-200V 125mA /-300V /-500V /-600V GP01 TR-332 GP401 avalanche photodiodes PDF

    mdt10p621

    Abstract: No abstract text available
    Text: MDT10P621N AB 1. General Description -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static TMR0 : 8-bit real time clock/counter CMOS technology process to achieve higher speed and TMR1 : 16-bit real time clock/count smaller size with the low power consumption and high


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    MDT10P621N 16-bit oMDT10P621N 4Kx14 MDT10P621N) 192X8 mdt10p621 PDF

    Untitled

    Abstract: No abstract text available
    Text: MDT10P72N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high


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    MDT10P72N 16-bit 2Kx14 MDT10P72N) 128X8 PDF

    MDT10P62

    Abstract: MDT10P
    Text: MDT10P62 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and


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    MDT10P62 16-bit MDT10P 128X8 PDF

    20MHZ

    Abstract: 100nnn
    Text: MDT10P621N AB 1. 概述 -TMR0,TMR1,TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 -PORTB<7:4>电平变化中断


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    MDT10P621N PORTB74 MDT10P621N 20MHZ 200ns 4Kx14 MDT10P621N) 192X8 20MHZ 100nnn PDF

    MDT10P72

    Abstract: DC MOTOR SPEED CONTROLLER
    Text: MDT10P72 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high


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    MDT10P72 16-bit 128X8 DC MOTOR SPEED CONTROLLER PDF

    MDT10P721

    Abstract: 20MHZ
    Text: MDT10P721 BB 1. 概述 -A/D 转换完成 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 -PORTB<7:4>电平变化中断


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    MDT10P721 PORTB74 MDT10P721 20MHZ 200ns 192X8 20MHZ PDF

    Untitled

    Abstract: No abstract text available
    Text: MDT10P62N AB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and


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    MDT10P62N 16-bit 2Kx14 MDT10P62N) 128X8 PDF

    MDT10P621

    Abstract: MDT10P
    Text: MDT10P621 BB -PortB<7:4> interrupt on change -CCP,SCM 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip


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    MDT10P621 16-bit 192X8 MDT10P PDF

    20MHZ

    Abstract: MDT10P62 MDT10P
    Text: MDT10P62 BB .1. 概述 -CCP,SCM 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 TMR0 : 8 位时钟/记数器


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    MDT10P62 MDT10P62 20MHZ 200ns PORTB74 MDT10P 128X8 20MHZ PDF

    000-3FF

    Abstract: MDT10C55B
    Text: MDT10C55B 1. General Description Power-on Reset Power edge-detector Reset This ROM-Based 8-bit micro-controller uses a fully Sleep Mode for power saving static CMOS technology process to achieve higher 5 types of oscillator can be selected by speed programming option:


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    MDT10C55B 000-3FF MDT10C55B PDF

    MDT10P716

    Abstract: 200NS
    Text: MDT10P716 1概述: 这个 8 位 EPROM 微控制器是由完全静态 CMOS 技术设计,集高速、体积小、低功耗和高抗干扰 性一体的芯片。内存包括 2K 字节的 ROM 和 128 字节静态 RAM。 2、特点: RC-低价 RC 振荡器


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    MDT10P716 20MHz 200NS TMR116 TMR28 20-pin 18-pin MDT10P716 200NS PDF

    Untitled

    Abstract: No abstract text available
    Text: MDT10P721N AB -PortB<7:4> interrupt on change 1. General Description -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high noise


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    MDT10P721N 16-bit oscil21N 4Kx14 MDT10P721N) 192X8 PDF

    000-3FF

    Abstract: 200NS 20MHZ 20MS MDT10C55B
    Text: MDT10C55B 1.概述 电源边沿检测复位(PED) 这是一个 8 位基于 ROM 的微控制器,是由完全的静态 CMOS 睡眠低功耗模式 技术设计,集高速体积小、低功耗和高抗噪声一体的芯片, 5 种可选的振荡类型:


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    MDT10C55B 20MS40MS80M 20MHZ 200NS MDT10C55B1P/MDT10C55B1S MDT10C55B3P/MDT10C55B3S MDT10C55B2P/MDT10C55B2S -20mA 000-3FF 200NS 20MHZ 20MS MDT10C55B PDF

    EMI photomultiplier

    Abstract: Ignition Transformer GP01 GP02 GP03 GP05 GP08 GP10 GP15 EMCO High Voltage Corporation
    Text: Low Power Consumption DC to HV DC Converters 0 to ±100 through 0 to ±6,000 VDC @ 1 Watt GP Series INPUT CURRENT NO LOAD INPUT CURRENT (FULL LOAD) GP01 <45mA GP02 OUTPUT VOLTAGE OUTPUT CURRENT <150mA 0 to 100V 10mA <0.75% <45mA <150mA 0 to 200V 5mA <1.75%


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    150mA 125mA 840uA EMI photomultiplier Ignition Transformer GP01 GP02 GP03 GP05 GP08 GP10 GP15 EMCO High Voltage Corporation PDF

    EMI photomultiplier

    Abstract: 340ua Ignition Transformer GP01 TR-332 EMCO High Voltage EMCO High Voltage Corporation emco gp06
    Text: Low Power Consumption DC to HV DC Converters 0 to ±100 through 0 to ±6,000 VDC @ 1 Watt GP Series 3 in FEATURES OPTIONS External Mounting Box, See AB Series Epoxy: A. Low Outgassing NASA approved per ASTM E-595-93 B. UL 94 V0 flammability rating RoHS(- ‘R’ suffix denotes the product is designed to meet RoHS requirements i.e GP01R)


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    100VDC 000VDC, 4728U EMI photomultiplier 340ua Ignition Transformer GP01 TR-332 EMCO High Voltage EMCO High Voltage Corporation emco gp06 PDF

    MB96F613

    Abstract: MB96F612 MB96F610
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS704-00007-0v03-E 16-bit Proprietary Microcontroller CMOS 2 F MC-16FX MB96610 Series MB96F612/F613/F615* DESCRIPTION MB96610 series is based on FUJITSU’s advanced 16FX architecture 16-bit with instruction pipeline for RISC-like performance . The CPU uses the same instruction set as the established 16LX series - thus


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    DS704-00007-0v03-E 16-bit MC-16FX MB96610 MB96F612/F613/F615* MB96F613 MB96F612 MB96F610 PDF

    20MHZ

    Abstract: No abstract text available
    Text: MDT10P72N AB 1. 概述 -TMR0,TMR1,TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 -A/D 转换完成


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    MDT10P72N PORTB74 20MHZ MDT10P72N 200ns 2Kx14 MDT10P72N) 20MHZ PDF

    20MHZ

    Abstract: 84uA
    Text: MDT10P721N AB 1. 概述 -A/D 转换完成 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 -PORTB<7:4>电平变化中断


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    MDT10P721N PORTB74 MDT10P721N 20MHZ 200ns PC1/T10 4Kx14 20MHZ 84uA PDF

    MDT10P721

    Abstract: No abstract text available
    Text: MDT10P721 BB 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high


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    MDT10P721 16-bit 192X8 PDF

    MDT10P621

    Abstract: MDT10P 20MHZ 4KX14
    Text: MDT10P621 BB 1. 概述 -TMR0,TMR1,TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 -PORTB<7:4>电平变化中断


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    MDT10P621 PORTB74 MDT10P621 20MHZ 200ns specificat14 MDT10P 192X8 20MHZ 4KX14 PDF

    20MHZ

    Abstract: MDT10P72
    Text: MDT10P72 BB 1. 概述 -TMR0,TMR1,TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 -A/D 转换完成


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    MDT10P72 PORTB74 20MHZ MDT10P72 200ns 128X8 20MHZ PDF

    000-3FF

    Abstract: 200NS MDT10P712
    Text: MDT10P712 1概述: 这个 8 位 EPROM 微控制器是由完全静态 CMOS 技术设计,集高速、体积小、低功耗和高抗干扰 性一体的芯片。内存包括 4K 字节的 ROM 和 192 字节静态 RAM。 RC-低价 RC 振荡器 LFXT-低频晶体振荡器


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    MDT10P712 20MHz 200NS TMR116 TMR28 20-pin 18-pin 000-3FF 200NS MDT10P712 PDF

    MDT10P716

    Abstract: No abstract text available
    Text: MDT10P716 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip memory includes 2K words of ROM, and 128


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    MDT10P716 16-bit -20mA MDT10P716 PDF