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    Raspberry Pi M12 LENS 15MP 2.7MM WIDE ANGLE ~185 DEG

    Accessories: lens
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    TME M12 LENS 15MP 2.7MM WIDE ANGLE ~185 DEG 1
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    85DEG. Datasheets Context Search

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    sanyo OS-CON sepc

    Abstract: 35SVPD22M 35SVPD18M sanyo sepc 35SVPD8R2M sanyo oscon sepc series
    Text: Series Aluminum solid capacitors with Conductive polymer Rated voltage 35V : High withstand voltage 125deg.C guarantee : High enduarance * Endurance : 125deg.C x WV x 1,000Hr * Damp heat : 85deg.C x 85% x WV x 1,000Hr SEPC Series Characteristics List Size code


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    PDF 125deg 000Hr 85deg 105deg 35SVPD8R2M 35SVPD18M 35SVPD22M sanyo OS-CON sepc 35SVPD22M 35SVPD18M sanyo sepc 35SVPD8R2M sanyo oscon sepc series

    35SVPD47M

    Abstract: 25SVPD22M 25SVPD82M 25SVPD47M sanyo os-con capacitors date code 10SVPD56M 16SVPD82M 25SVPD10M 25SVPD39M 35SVPD18M
    Text: '04 - 12 Series Aluminum solid capacitors with Conductive polymer High voltage : Rated Voltage 35V High enduarance : 125deg.C guarantee * Lead free * Endurance : 125deg.C x RV x 2,000h * Damp heat : 85deg.C x 85% x RV x 1,000h Introducing additional models highlighted in red


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    PDF 125deg 85deg 100kHz300kHz 100kHz 105deg 25SVPD10M 10SVPD56M 35SVPD8R2M 25SVPD22M 35SVPD47M 25SVPD22M 25SVPD82M 25SVPD47M sanyo os-con capacitors date code 10SVPD56M 16SVPD82M 25SVPD10M 25SVPD39M 35SVPD18M

    MF-2500

    Abstract: IC for IR receiver mitsubishi receiver STM-16 V-16 V162 MF-2500SRA-XXXXX MF-2500SRB-XXXXX mitsubishi optical transmitter receiver L16.2
    Text: MITSUBISHI TQ9-98-232D 1/17 Sep.20 1999 2nd Generation SDH /SONET integrated module Multi-Source STM-16 / OC-48 Features: 1. Full SONET/SDH line up 2. Low cost 3. Compact, low power 4. +5V single power supply, DC/DC converter built in for Rx 5. Case Temp. Range: Class 1;-5 to +75deg.C / Class 2;-40 to +85deg.C


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    PDF TQ9-98-232D STM-16 OC-48 75deg 85deg 666Gb/s STM-16/SONET OC-48. MF-2500 IC for IR receiver mitsubishi receiver V-16 V162 MF-2500SRA-XXXXX MF-2500SRB-XXXXX mitsubishi optical transmitter receiver L16.2

    SCP6G

    Abstract: No abstract text available
    Text: Specification: TS-S08D192A February, 2009 Technical specification for Small Form Factor Pluggable SFP OC-3 (155.52Mbps) Sumitomo Part Number Function SCP6G11-GL-# W E LR-1, 1310nm, 40km SCP6G61-GL-# W E LR-2, 1550nm, 80km Sumitomo Electric reserves the right to make changes in this specification without prior notice.


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    PDF TS-S08D192A 52Mbps) SCP6G11-GL-# 1310nm, SCP6G61-GL-# 1550nm, 1310nm 1550nm SCP6G

    Untitled

    Abstract: No abstract text available
    Text: Preliminary ES/SMM5141XZ 17.7 – 23.6GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier and x2 multiplier • Conversion Gain : -12dB • Input Third Order Intercept Point IIP3 : +22dBm


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    PDF ES/SMM5141XZ -12dB 22dBm 30dBc ES/SMM5141XZ

    ML720J35S

    Abstract: ML720K35S ML725B35F ML725C35F ML7XX35
    Text: MITSUBISHI LASER DIODES ML7XX35 SERIES InGaAsP - MQW - FP LASER DIODES TYPE NAME ML720J35S , ML720K35S ML725B35F , ML725C35F DESCRIPTION FEATURES ML7XX35 series are InGaAsP laser diodes which provides a stable, single transverse mode oscillation with emission


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    PDF ML7XX35 ML720J35S ML720K35S ML725B35F ML725C35F 1310nm 85deg ML720J35S ML720K35S ML725B35F ML725C35F

    ML925B45F

    Abstract: ML9XX45 laser 1550 spectral ML920J45S ML920K45S ML920Y45S ML925C45F 1520nm ingaasp 1550 laser diode DSA002250
    Text: MITSUBISHI LASER DIODES PRELIMINARY ML9xx45 SERIES 1550,1520nm InGaAsP FP LASER DIODES Notice: Some parametric limits are subject to change TYPE NAME ML920J45S , ML920K45S,ML920Y45S ML925B45F , ML925C45F DESCRIPTION FEATURES •1550 or 1520nm typical emission wavelength, FP-LDs


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    PDF ML9xx45 1520nm ML920J45S ML920K45S ML920Y45S ML925B45F ML925C45F 85deg ML920J45S, ML925B45F laser 1550 spectral ML920J45S ML920Y45S ML925C45F ingaasp 1550 laser diode DSA002250

    Untitled

    Abstract: No abstract text available
    Text: ES/SMM5141XZ Preliminary 17.7 – 23.6GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier and x2 multiplier • Conversion Gain : -12dB • Input Third Order Intercept Point IIP3 : +22dBm


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    PDF ES/SMM5141XZ -12dB 22dBm 30dBc ES/SMM5141XZ

    AN0017

    Abstract: CHA3693-QDG qfn 76 PACKAGE footprint
    Text: CHA3693-QDG RoHS COMPLIANT 20-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description CHA3693-QDG on a Board The CHA3693-QDG is a high gain broadband four stage monolithic medium power amplifier. It is designed for a wide range of applications from


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    PDF CHA3693-QDG 20-30GHz CHA3693-QDG 20-30GHz 20dBm 330mA 28dBm 24L-QFN4x4 DSCHA3693-QDG7268 AN0017 qfn 76 PACKAGE footprint

    SHS-M0

    Abstract: Hitachi DSA002699
    Text: HS-SHS-M085TJ-0406A Antenna Switch Module for Triple Band Phone GSM(850/900 /DCS/PCS) Model No. SHS-M085TJ 2. Logic & Current 1. Measurement Circuit Top View GSM(850/900)_TX (Tx1) ANT GSM(850/900)_RX (Rx1) VC1 33p 33n 11 10 9 8 7 12 VC1 2.6V 0V 0V 0V 0V VC2 VC3 Current


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    PDF HS-SHS-M085TJ-0406A SHS-M085TJ 85deg GSM850/900 SHS-M0 Hitachi DSA002699

    EIAJ ED-4701-1

    Abstract: tc5118165bj EIAJ ED-4701-1 C-111A TC5118165 TC514265DJ a107a tc5165165 tc5117405 TC5165165B failure rate TDDB
    Text: [3] 東芝半導体製品の品質・信頼性保証 1. 1.1 信頼性試験とは 信頼性試験の意義と目的 半導体デバイスの信頼性試験の目的としてデバイスがメーカーから出荷されお客様の機器組み立て 調整工程を経て、最終ユーザーにおいて所望の期間、機器の機能、性能が発揮されることを確認する


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    PDF M65BJ TC5117405BST TC51V16165BFT TC5118165BFT 65deg C/150deg 300cycles) TC5117405BSJ TC514265DJ TC5118165BJ EIAJ ED-4701-1 tc5118165bj EIAJ ED-4701-1 C-111A TC5118165 TC514265DJ a107a tc5165165 tc5117405 TC5165165B failure rate TDDB

    Untitled

    Abstract: No abstract text available
    Text: ISOLATED DC/DC CONVERTERS • • • • • • • 18 Vdc - 36 Vdc Input 12 Vdc /10 A, 3.3 Vdc/30 A 0RCY-80Rxxx RoHS Compliant Isolated High Efficiency High Power Density Fixed Frequency 300 kHz Input Under-Voltage Lockout Output Over-Voltage Shutdown


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    PDF Vdc/30 0RCY-80Rxxx 0RCY-80Rxxx 2002/95/EC,

    Untitled

    Abstract: No abstract text available
    Text: ISOLATED DC/DC CONVERTERS • • • • • • • 18 Vdc - 75 Vdc Input 3.3 Vdc /15 A Output 0RCY-60U03x RoHS Compliant • • • • • • • • Isolated High Efficiency High Power Density Fixed Frequency 260 kHz Input Under-Voltage Lockout Input Over-Voltage Lockout


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    PDF 0RCY-60U03x UL60950-1 0RCY-60U03x 2002/95/EC,

    CSTCR4M00G55-R0

    Abstract: TC74HCU04
    Text: 1 Evaluation Data of CERALOCK Oscillation Circuit Technical Data of Ceramic Resonator MURATA Part No.: CSTCR4M00G55-R0 Applied to R5F36C0MDFB High Compatibility Information Ceramic resonator is compatible to : CSTCR4M00G55Z-R0 Temperature range :-40 to +125[deg.C]


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    PDF CSTCR4M00G55-R0 R5F36C0MDFB CSTCR4M00G55Z-R0 TCD-08-1396 85deg CSTCR4M00G55-R0 TC74HCU04

    Untitled

    Abstract: No abstract text available
    Text: ES/SMM5143XZ Preliminary 24 – 30GHz Up converter MMIC FEATURES • Wafer Level Chip Scale Package with Solder Ball • Integrated Balanced Mixer, LO Buffer Amplifier and x2 multiplier • Conversion Gain : -12dB • Input Third Order Intercept Point IIP3 : +24dBm


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    PDF ES/SMM5143XZ 30GHz -12dB 24dBm ES/SMM5143XZ

    39E2527A

    Abstract: GRM155B11E103K GRM155B11H102K spectrum emission mask MITSUBISHI Microwave PW2100 GRM32EB31C476K grm188B31E105K metal detector plans wimax spectrum mask
    Text: MITSUBISHI SEMICONDUCTOR MGFS39E2527A-01 2.5-2.7GHz HBT Integrated Circuit Specifications are subject to change without notice. Outline Drawing DESCRIPTION 6.0 6.0 30 29 28 27 26 25 24 23 22 21 39E2527A Lot. No JAPAN 11 12 13 14 15 16 17 18 19 20 InGaP HBT Device


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    PDF MGFS39E2527A-01 39E2527A 30dBm 64QAM, MGFS39E2527A 39E2527A GRM155B11E103K GRM155B11H102K spectrum emission mask MITSUBISHI Microwave PW2100 GRM32EB31C476K grm188B31E105K metal detector plans wimax spectrum mask

    VCTCXO 19.2 MHz

    Abstract: No abstract text available
    Text: Ultra miniature and High-precision SMD TCXO Miniature and High-precision SMD VC-TCXO DSB221SDA/DSB221SDB DSA321SDA for GPS / Industrial Radio system Features 2520 size, 0.8mm high. Ultra miniature and high-precision SMD TCXO 0.0045cc・0.02g ● Low voltage. Supply voltage up to +1.7~+3.6V.


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    PDF DSA321SDA 008cc0 Offset100kHz) 15f26MHz] Offset100Hz) Offset10kHz) 2000pcs 26f40MHz] VCTCXO 19.2 MHz

    SMD 5 PIN CODE E4

    Abstract: SMD E4 5 pin
    Text: SMD VC-TCXO/TCXO DSA321SC/DSB321SC for Mobile communications Features 3225 size, 0.9 mm high miniature SMD VC-TCXO/TCXO 0.008cc, 0.03g ● Wide operating voltage range. Supply voltage range +2.3 to +5.5V ● Low phase noise ● Single packaged structure


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    PDF DSA321SC/DSB321SC 008cc, JSTD033) CDMA2000, DSA321SC) DSB321SC) SMD 5 PIN CODE E4 SMD E4 5 pin

    26mhz 3225

    Abstract: No abstract text available
    Text: SMD VC-TCXO/TCXO〈For Automotive〉 DSA321SF/DSB321SF for Automotive Applications Features NEW ● ● ● ● ● ● 3225 size, 0.9 mm high miniature SMD VC-TCXO/TCXO 0.008cc, 0.03g Capable of operating over a wide temperature range, from –40℃ to 105℃.


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    PDF DSA321SF/DSB321SFfor 008cc, JSTD033) -130dBc/HzOffset -125dBc/HzOffset -145dBc/HzOffset 10kHz -140dBc/HzOffset -135dBc/HzOffset 26mhz 3225

    OD-J8670-0A01

    Abstract: OD-J8670-0B01 OD-S524-FCPC-SM OD-S524-MUJ-SM OD-S524-SC-SM STM-16
    Text: OE HYBRID 2.48832Gbps Transmitter OD-J8670-0A01/0B01 OC-48: IR-1/LR-1 STM-16: S-16.1/L-16.1 1 Copyright C 1994-2001 NEC Corporation 7th September 2001 Rev. 0.1, Preliminary - Contents 1. PRODUCT


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    PDF 48832Gbps OD-J8670-0A01/0B01 OC-48: STM-16: 1/L-16 OD-J8670-0A01 OD-J8670-0B01 OD-S524-FCPC-SM OD-S524-MUJ-SM OD-S524-SC-SM STM-16

    HA01

    Abstract: OD-J6860-0A01 OD-J6860-HA01 OD-S524-FCPC-SM OD-S524-MUJ-SM OD-S524-SC-SM OD-S524-MU-SM
    Text: OE HYBRID 622.08Mbps Transmitter OD-J6860-0A01/ HA01 OC-12: SR and IR-1 STM-4: I-4 and S-4.1 1 Copyright C 1994-2001 NEC Corporation 11 t h September, 2001 Rev.6 - Contents 1. PRODUCT


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    PDF 08Mbps OD-J6860-0A01/ OC-12: HA01 OD-J6860-0A01 OD-J6860-HA01 OD-S524-FCPC-SM OD-S524-MUJ-SM OD-S524-SC-SM OD-S524-MU-SM

    HBT 01 05

    Abstract: No abstract text available
    Text: Mitsubishi Semiconductors MGFS38E3336-01 3.3 - 3.6GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E3336 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •


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    PDF MGFS38E3336-01 MGFS38E3336 64QAM, IEEE802 16e-2005 0120sec HBT 01 05

    GRM31CB30J476K

    Abstract: MGFS38E2325 RPC03T
    Text: Mitsubishi Semiconductors MGFS38E2325-01 2.3 - 2.5GHz HBT MMIC MODULE Specifications are subject to change without notice. Outline Drawing DESCRIPTION MGFS38E2325 is a GaAs RF amplifier designed for WiMAX CPE. DIM in mm 1.0 4.0 • • • • • • •


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    PDF MGFS38E2325-01 MGFS38E2325 64QAM, IEEE802 16e-2005 0120sec GRM31CB30J476K RPC03T

    Untitled

    Abstract: No abstract text available
    Text: ISOLATED DC/DC CONVERTERS 18 Vdc - 36 Vdc Input 12 Vdc /10 A, 3.3 Vdc/30 A Outputs 0RCY-80Rxxx RoHS Compliant PRELIMINARY Rev. D • • • • • • • Isolated High Efficiency High Power Density Fixed Frequency 300 kHz Input Under-Voltage Lockout Output Over-Voltage Shutdown


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    PDF Vdc/30 0RCY-80Rxxx 2002/95/EC,