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Catalog Datasheet	MFG & Type	Document Tags	PDF
cep4060al Abstract: No abstract text available Text: March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 15 A , R ds ON =80iti Q D @ V gs =10V. R ds(on)=85itiQ @ V gs =5.0V. • Super high dense cell design for extremely low Rds(on). • High power and current handling capability.	OCR Scan	85itiQ O-220 O-263 to-263 to-220 CEP4060ALR/CEB4060ALR cep4060al	PDF

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cep4060al

Abstract: No abstract text available
Text: March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 6 0 V , 15 A , R ds ON =80iti Q D @ V gs =10V. R ds(on)=85itiQ @ V gs =5.0V. • Super high dense cell design for extremely low Rds(on). • High power and current handling capability.

OCR Scan

85itiQ O-220 O-263 to-263 to-220 CEP4060ALR/CEB4060ALR cep4060al

PDF