te28f320b3bd70
Abstract: TE28F320B3TD flash device MARKing intel 28f016 28F008B3 28F016B3 28F160B3 28F320B3 28F640B3 28F800B3 76000-77FFF
Text: Intel£ Advanced Boot Block Flash Memory B3 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V – 3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O Option
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Original
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28F008/800B3,
28F016/160B3,
28F320B3,
28F640B3
48-ball
te28f320b3bd70
TE28F320B3TD
flash device MARKing intel 28f016
28F008B3
28F016B3
28F160B3
28F320B3
28F640B3
28F800B3
76000-77FFF
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PDF
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TE28F320B3BD70
Abstract: TE28F320B3BD 28F008B3 28F016B3 28F160B3 28F320B3 28F640B3 28F800B3 TE28F320B3TD
Text: Intel£ Advanced Boot Block Flash Memory B3 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming • 1.65 V–2.5 V or 2.7 V–3.6 V I/O Option
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Original
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28F008/800B3,
28F016/160B3,
28F320B3,
28F640B3
TE28F320B3BD70
TE28F320B3BD
28F008B3
28F016B3
28F160B3
28F320B3
28F640B3
28F800B3
TE28F320B3TD
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PDF
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VA36
Abstract: No abstract text available
Text: Intel£ Advanced Boot Block Flash Memory B3 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming • 1.65 V–2.5 V or 2.7 V–3.6 V I/O Option
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Original
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28F008/800B3,
28F016/160B3,
28F320B3,
28F640B3
VA36
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PDF
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28F008SA
Abstract: C1995 MCM28F064ACH 4F0000 6A0000 4D0000 76FFFF
Text: July 1995 MCM28F064ACH 64-Mbit 8-Mbit x 8 Flash Memory Module with Internal Decoding and Quiet Series I O Buffers General Description Features The MCM28F064ACH is a 67 108 864-bit flash memory module organized as 8 pages with 1 048 576 bytes per page Utilizing Intel’s FlashFileTM
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Original
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MCM28F064ACH
64-Mbit
MCM28F064ACH
864-bit
28F008SA
C1995
4F0000
6A0000
4D0000
76FFFF
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PDF
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JS28F160B3BD70
Abstract: flash device MARKing intel 28f016 te28F320B3BD70 BGA PACKAGE TOP MARK intel uBGA device MARKing intel GE28F160B3BC70 JS28F320B3BD70 intel BGA PACKAGE TOP MARK 28F016B3 28F160B3
Text: Intel Advanced Boot Block Flash Memory B3 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V V PP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option
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Original
|
28F008/800B3,
28F016/160B3,
28F320B3,
28F640B3
64-KB
48-ball
JS28F160B3BD70
flash device MARKing intel 28f016
te28F320B3BD70
BGA PACKAGE TOP MARK intel
uBGA device MARKing intel
GE28F160B3BC70
JS28F320B3BD70
intel BGA PACKAGE TOP MARK
28F016B3
28F160B3
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS465169, TMS465169P 4194304 BY 16ĆBIT EXTENDED DATA OUT DYNAMIC RANDOMĆACCESS MEMORIES SMHS566B − JUNE 1997 − REVISED APRIL 1998 DGE PACKAGE TOP VIEW D Organization . . . 4 194 304 by 16 Bits D Single 3.3-V Power Supply (± 0.3 V Tolerance) VCC
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Original
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TMS465169,
TMS465169P
SMHS566B
46x169/P-50
46x169/P-60
TMS46x169P)
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PDF
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TMS464409
Abstract: TMS464409P TMS465409 TMS465409P R-PDSO-G32
Text: TMS464409, TMS464409P, TMS465409, TMS465409P 16 777 216 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMKS895A – MAY 1997 – REVISED OCTOBER 1997 D D D D D D D D D DGC PACKAGE TOP VIEW Organization . . . 16 777 216 by 4 Bits Single 3.3-V Power Supply
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Original
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TMS464409,
TMS464409P,
TMS465409,
TMS465409P
SMKS895A
46x409/P-40
46x409/P-50
46x409/P-60
TMS464409
TMS464409P
TMS465409
TMS465409P
R-PDSO-G32
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PDF
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TMS465169
Abstract: TMS465169P
Text: TMS465169, TMS465169P 4194304 BY 16-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES SMHS566B – JUNE 1997 – REVISED APRIL 1998 D D D D D D D D D D DGE PACKAGE TOP VIEW Organization . . . 4 194 304 by 16 Bits Single 3.3-V Power Supply (± 0.3 V
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Original
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TMS465169,
TMS465169P
16-BIT
SMHS566B
46x169/P-50
46x169/P-60
TMS46x169P)
TMS465169
TMS465169P
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PDF
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TE28F320B3TD
Abstract: TE28F320B3BD70 GE28F160B3BC70 TE28F160B3BC70 TE28F320B3TD70 PH28F320 TE28F320B3BC70 TE28F320B3BD GE28F160B3BD70 te28f160b3ta90
Text: Intel Advanced Boot Block Flash Memory B3 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V – 3.6 V read/program/erase — 12 V VPP fast production programming • 1.65 V – .5 V or 2.7 V – 3.6 V I/O option
|
Original
|
28F008/800B3,
28F016/160B3,
28F320B3,
28F640B3
64-KB
48-ball
TE28F320B3TD
TE28F320B3BD70
GE28F160B3BC70
TE28F160B3BC70
TE28F320B3TD70
PH28F320
TE28F320B3BC70
TE28F320B3BD
GE28F160B3BD70
te28f160b3ta90
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PDF
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28F008B3
Abstract: 28F016B3 28F160B3 28F320B3 28F640B3 28F800B3 TE28F320 8891h TE28F016B3TA110 TE28F800B3TA110
Text: 3-Volt Advanced Boot Block Flash Memory 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming • 1.65 V–2.5 V or 2.7 V–3.6 V I/O Option
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Original
|
28F008/800B3,
28F016/160B3,
28F320B3,
28F640B3
28F008B3
28F016B3
28F160B3
28F320B3
28F640B3
28F800B3
TE28F320
8891h
TE28F016B3TA110
TE28F800B3TA110
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PDF
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Untitled
Abstract: No abstract text available
Text: TMS664414, TMS664814, TMS664164 4 194 304 BY 4ĆBIT/2 097 152 BY 8ĆBIT/1 048 576 BY 16ĆBIT BY 4ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORIES SMOS695A − APRIL 1998 − REVISED JULY 1998 D Organization . . . D D D D D D D D D D D Pipeline Architecture Single-Cycle
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Original
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TMS664414,
TMS664814,
TMS664164
SMOS695A
x8/x16
125-MHz
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PDF
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TMS664164
Abstract: TMS664414 TMS664814
Text: TMS664414, TMS664814, TMS664164 4 194 304 BY 4ĆBIT/2 097 152 BY 8ĆBIT/1 048 576 BY 16ĆBIT BY 4ĆBANK SYNCHRONOUS DYNAMIC RANDOMĆACCESS MEMORIES SMOS695A − APRIL 1998 − REVISED JULY 1998 D Organization . . . D D D D D D D D D D D Pipeline Architecture Single-Cycle
|
Original
|
TMS664414,
TMS664814,
TMS664164
16BIT
SMOS695A
x8/x16
125-MHz
TMS664164
TMS664414
TMS664814
|
PDF
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TMS664164
Abstract: TMS664414 TMS664814
Text: TMS664414, TMS664814, TMS664164 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS695A – APRIL 1998 – REVISED JULY 1998 D D D D D D D D D D D D Organization . . . 1 048 576 x 16 Bits x 4 Banks
|
Original
|
TMS664414,
TMS664814,
TMS664164
16-BIT
SMOS695A
x8/x16
125-MHz
TMS664164
TMS664414
TMS664814
|
PDF
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TE28F160B3BC70
Abstract: TE28F320B3BD70 28F008B3 28F016B3 28F320B3 28F400B3 28F640B3 28F400 TE28F640B3BC100 TE28F320B3TD
Text: 3-Volt Advanced Boot Block Flash Memory 28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3 Preliminary Datasheet Product Features • Flexible SmartVoltage Technology — 2.7 V–3.6 V Read/Program/Erase — 12 V VPP Fast Production Programming • 1.65 V–2.5 V or 2.7 V–3.6 V I/O Option
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Original
|
28F004/400B3,
28F008/800B3,
28F016/160B3,
28F320B3,
28F640B3
TE28F160B3BC70
TE28F320B3BD70
28F008B3
28F016B3
28F320B3
28F400B3
28F640B3
28F400
TE28F640B3BC100
TE28F320B3TD
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PDF
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|
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TMS465169
Abstract: TMS465169P
Text: TMS465169, TMS465169P 4194304 BY 16ĆBIT EXTENDED DATA OUT DYNAMIC RANDOMĆACCESS MEMORIES SMHS566B − JUNE 1997 − REVISED APRIL 1998 D Organization . . . 4 194 304 by 16 Bits D Single 3.3-V Power Supply ± 0.3 V DGE PACKAGE ( TOP VIEW Tolerance) D Performance Ranges:
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Original
|
TMS465169,
TMS465169P
16BIT
SMHS566B
46x169/P-50
46x169/P-60
TMS46x169P)
TMS465169
TMS465169P
|
PDF
|
TMS664164
Abstract: TMS664414 TMS664814
Text: TMS664414, TMS664814, TMS664164 4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS695A – APRIL 1998 – REVISED JULY 1998 D D D D D D D D D D D D Organization . . . 1 048 576 x 16 Bits x 4 Banks
|
Original
|
TMS664414,
TMS664814,
TMS664164
16-BIT
SMOS695A
x8/x16
125-MHz
TMS664164
TMS664414
TMS664814
|
PDF
|
Untitled
Abstract: No abstract text available
Text: "H Y U N D A I - • HY57V654010 2 Banks x 8 M x 4 Bit Synchronous DRAM DESCRIPTION The Hyundai H Y 57V654010 is a 6 7 ,1 0 8 ,864-bit C M O S Synchronous D RA M ideally suited for the main memory appli cations which require large memory density and high bandwidth. H Y 57V654010 is organized as 2banks of
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OCR Scan
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HY57V654010
57V654010
864-bit
608x4.
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PDF
|
Untitled
Abstract: No abstract text available
Text: »«YUWPA! > — - • HY57V658010 2 Banks x 4 M x 8 8 it Synchronous DRAM DESCRIPTION The Hyundai H Y57V 658010 is a 67,108, 864-bit C M O S Synchronous DRAM, ideally suited for the main memory appli cations which require large memory density and high bandwidth. H Y 57V 658010 is organized as 2banks of
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OCR Scan
|
HY57V658010
864-bit
304x8.
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PDF
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HY57V651620TC10
Abstract: No abstract text available
Text: C « « Y U IID A I > -• HY57V651620 4 Banks x 1 M x 1 6 Bit Synchronous ORAM DESCRIPTION The Hyundai HY57V651620 is a 67,108, 864-bit CMOS Synchronous DRAM, ideally suited for the main memory appli cations which require large memory density and high bandwidth. HY57V651620 is organized as 4banks of
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OCR Scan
|
HY57V651620
HY57V651620
864-bit
576x16.
ISE12-10-SEP97
HY57V651620TC10
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PDF
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