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    865 RF TRANSISTOR Search Results

    865 RF TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    865 RF TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor P239

    Abstract: 865 RF transistor MAPLST0810-030CF p239
    Text: RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 30W, 26V 5/14/04 MAPLST0810-030CF Preliminary Features Q Q Q Q Q Package Style Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC:


    Original     		PDF MAPLST0810-030CF 960MHz, 26VDC: 925MHz P-239 transistor P239 865 RF transistor MAPLST0810-030CF p239

    transistor P239

    Abstract: P239 transistor P239 045-CF 865 RF transistor P-239 MAPLST0810-045CF
    Text: RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 45W, 26V 5/21/04 MAPLST0810-045CF Preliminary Features Q Q Q Q Q Package Style Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC:


    Original     		PDF MAPLST0810-045CF 960MHz, 26VDC: 900MHz P-239 transistor P239 P239 transistor P239 045-CF 865 RF transistor P-239 MAPLST0810-045CF

    MAPLST0810-90CF

    Abstract: MAPLST0810-090CF
    Text: RF Power Field Effect Transistor LDMOS, 865 — 960 MHz, 90W, 26V 5/14/04 MAPLST0810-090CF Preliminary Features Q Q Q Q Q Q Package Style Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC:


    Original     		PDF MAPLST0810-090CF 960MHz, 26VDC: 900MHz P-238 MAPLST0810-90CF MAPLST0810-90CF MAPLST0810-090CF

    MRF9085

    Abstract: UGF09085F UGF09085P
    Text: UGF09085 90W, 865-880 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband Commercial and Industrial applications in the frequency band 865 to 890 MHz. Rated with a minimum output power of 90W, it is ideal for large signal common source


    Original     		PDF UGF09085 MRF9085 IS-97) -40dBc 750kHz -55dBc 98MHz UGF09Pow 700mA 880MHz MRF9085 UGF09085F UGF09085P

    potentiometer 1k ohm

    Abstract: No abstract text available
    Text: UGF09085 90W, 865-880 MHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband Commercial and Industrial applications in the frequency band 865 to 890 MHz. Rated with a minimum output power of 90W, it is ideal for large signal common source


    Original     		PDF UGF09085 MRF9085. 26VDC, 880MHz, UGF09085F UGF09085 potentiometer 1k ohm

    93F2975

    Abstract: MRF9120S MRF9120
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9120 MRF9120S 93F2975

    MRF9120

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9120 MRF9120S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9180 MRF9180S

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9180 MRF9180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9180 MRF9180S

    MRF9135LSR3

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9135L MRF9135LR3 MRF9135LSR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9135L MRF9135LR3 MRF9135LSR3

    MRF9120

    Abstract: MRF9120S
    Text: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9120/D MRF9120 MRF9120S MRF9120S

    c14 cutout

    Abstract: MRF9085
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF9085 MRF9085S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 to 895 MHz band. The high gain and broadband performance


    Original     		PDF MRF9085 MRF9085S c14 cutout

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF9180 MRF9180S The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 – 895 MHz band. The high gain and broadband performance


    Original     		PDF MRF9180 MRF9180S

    MRF9210

    Abstract: DS0978 nippon capacitors 2508051107Y0 3A412 180R8R2JW500X 100B4R3 100B270JP500X
    Text: MOTOROLA Order this document by MRF9210/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9210 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9210/D MRF9210 MRF9210 DS0978 nippon capacitors 2508051107Y0 3A412 180R8R2JW500X 100B4R3 100B270JP500X

    100B470JP500X

    Abstract: MRF9120
    Text: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9120/D MRF9120 MRF9120S MRF9120/D 100B470JP500X

    nippon capacitors

    Abstract: transistor J585
    Text: MOTOROLA Order this document by MRF9210/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF9210R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9210/D MRF9210R3 nippon capacitors transistor J585

    MRF9120

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9120/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies in the 865 to 895 MHz band. The high gain and broadband performance of this


    Original     		PDF MRF9120/D MRF9120 MRF9120S

    MRF9180R6

    Abstract: No abstract text available
    Text: Document Number: MRF9180 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9180 MRF9180R6 IS-95 MRF9180R6

    MRF9180

    Abstract: MRF9180R6
    Text: Document Number: MRF9180 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF9180R6 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9180 MRF9180R6 IS-95 MRF9180 MRF9180R6

    MARKING WB1

    Abstract: ATC100B470JT500XT MRF9135L MRF9135LR3 T491D106K035AT
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9135LR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9135LR3 MRF9135L MARKING WB1 ATC100B470JT500XT MRF9135LR3 T491D106K035AT

    AGR09045E

    Abstract: AGR09045EF AGR09045EU JESD22-C101A cdm 316 j0101 J0316 grm40x7r103k100al RM73B2B103J
    Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 AGR09045E AGR09045EU AGR09045EF AGR09045EF AGR09045EU JESD22-C101A cdm 316 j0101 J0316 grm40x7r103k100al RM73B2B103J

    C1206C104KRAC7800

    Abstract: 100b6r8 AGR09045E AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW
    Text: AGR09045E 45 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09045E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular


    Original     		PDF AGR09045E Hz--895 AGR09045E DS04-295RFPP DS04-198RFPP) C1206C104KRAC7800 100b6r8 AGR09045EF AGR09045EU JESD22-C101A RM73B2B103J 100B470JW

    MARKING WB1

    Abstract: MRF9085 MRF9085LR3 MRF9085LSR3 MRF9085LS
    Text: Freescale Semiconductor Technical Data Document Number: MRF9085 Rev. 11, 5/2006 RF Power Field Effect Transistors MRF9085LR3 MRF9085LSR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance


    Original     		PDF MRF9085 MRF9085LR3 MRF9085LSR3 MRF9085LR3 MARKING WB1 MRF9085 MRF9085LSR3 MRF9085LS

    MRF9120

    Abstract: MRF9120LR3
    Text: Document Number: MRF9120 Rev. 10, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF9120LR3 Designed for broadband commercial and industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of


    Original     		PDF MRF9120 MRF9120LR3 IS-95 MRF9120 MRF9120LR3