multipoint abb temperature controller
Abstract: cnet abb 2PAA101137 800xa modular plug RJ45 rj45 to 9pin serial abb 64 PIN plug abb s800 S800 S900
Text: IndustrialIT System 800xA AC 870P – PM 875 Controller Data Sheet The PM 875 controller is a member of the Extended Automation System 800xA family. The PM 875 controller uses a 32 bit processor for maximum computing power and modular scalability. The integrated redundant PROFIBUS interface provides connectivity to ABBs
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800xA
800xA
multipoint abb temperature controller
cnet abb
2PAA101137
modular plug RJ45
rj45 to 9pin serial
abb 64 PIN plug
abb s800
S800
S900
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PDF
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Untitled
Abstract: No abstract text available
Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability
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Original
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TSHA6200,
TSHA6201,
TSHA6202,
TSHA6203
2002/95/EC
2002/96/EC
TSHA620.
2011/65/EU
2002/95/EC.
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PDF
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Untitled
Abstract: No abstract text available
Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability
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Original
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TSHA6200,
TSHA6201,
TSHA6202,
TSHA6203
2002/95/EC
2002/96/EC
TSHA620.
11-Mar-11
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PDF
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TSHA6501
Abstract: TSHA6503 TSHA6500
Text: TSHA6500, TSHA6501, TSHA6502, TSHA6503 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability
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Original
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TSHA6500,
TSHA6501,
TSHA6502,
TSHA6503
2002/95/EC
2002/96/EC
TSHA650.
18-Jul-08
TSHA6501
TSHA6503
TSHA6500
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PDF
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Untitled
Abstract: No abstract text available
Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability
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Original
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TSHA6200,
TSHA6201,
TSHA6202,
TSHA6203
2002/95/EC
2002/96/EC
TSHA620.
18-Jul-08
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PDF
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TSHA5202
Abstract: No abstract text available
Text: TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm
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Original
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TSHA5200,
TSHA5201,
TSHA5202,
TSHA5203
2002/95/EC
2002/96/EC
TSHA520.
11-Mar-11
TSHA5202
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PDF
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Untitled
Abstract: No abstract text available
Text: TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm
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Original
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TSHA5200,
TSHA5201,
TSHA5202,
TSHA5203
2002/95/EC
2002/96/EC
TSHA520.
2011/65/EU
2002/95/EC.
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PDF
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Untitled
Abstract: No abstract text available
Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: λp = 875 nm • High reliability
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Original
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TSHA6200,
TSHA6201,
TSHA6202,
TSHA6203
2002/95/EC
2002/96/EC
TSHA620.
2002/95/EC.
2011/65/EU.
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PDF
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TSHA6203
Abstract: TSHA620 TSHA6200 TSHA6201 TSHA6202
Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 875 nm High reliability
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Original
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TSHA6200,
TSHA6201,
TSHA6202,
TSHA6203
2002/95/EC
2002/96/EC
TSHA620.
11-Mar-11
TSHA6203
TSHA620
TSHA6200
TSHA6201
TSHA6202
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PDF
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Untitled
Abstract: No abstract text available
Text: TSHA4400, TSHA4401 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • 94 8636 Package type: leaded Package form: T-1 Dimensions in mm : Ø 3 Peak wavelength: λp = 875 nm High reliability
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Original
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TSHA4400,
TSHA4401
2002/95/EC
2002/96/EC
TSHA440.
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PDF
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TSHA5203
Abstract: No abstract text available
Text: TSHA5200, TSHA5201, TSHA5202, TSHA5203 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm
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Original
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TSHA5200,
TSHA5201,
TSHA5202,
TSHA5203
2002/95/EC
2002/96/EC
TSHA520.
18-Jul-08
TSHA5203
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PDF
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TSHA6503
Abstract: TSHA650 TSHA6500 TSHA6501 TSHA6502
Text: TSHA6500, TSHA6501, TSHA6502, TSHA6503 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 875 nm High reliability
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Original
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TSHA6500,
TSHA6501,
TSHA6502,
TSHA6503
2002/95/EC
2002/96/EC
TSHA650.
18-Jul-08
TSHA6503
TSHA650
TSHA6500
TSHA6501
TSHA6502
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PDF
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TSHA6202
Abstract: TSHA620 TSHA6200 TSHA6201 TSHA6203 tsha-6203 sr 460 diode
Text: TSHA6200, TSHA6201, TSHA6202, TSHA6203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Peak wavelength: λp = 875 nm High reliability
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Original
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TSHA6200,
TSHA6201,
TSHA6202,
TSHA6203
2002/95/EC
2002/96/EC
TSHA620.
18-Jul-08
TSHA6202
TSHA620
TSHA6200
TSHA6201
TSHA6203
tsha-6203
sr 460 diode
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PDF
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Untitled
Abstract: No abstract text available
Text: TSHA5200, TSHA5201, TSHA5202, TSHA5203 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: λp = 875 nm
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Original
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TSHA5200,
TSHA5201,
TSHA5202,
TSHA5203
2002/95/EC
2002/96/EC
TSHA520.
2002/95/EC.
2011/65/EU.
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PDF
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TSTA7100
Abstract: No abstract text available
Text: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity
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Original
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TSTA7100
2002/95/EC
2002/96/EC
TSTA7100
11-Mar-11
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PDF
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INFRARED EMITTING DIODE TO18
Abstract: No abstract text available
Text: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity
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Original
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TSTA7100
TSTA7100
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
INFRARED EMITTING DIODE TO18
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PDF
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Untitled
Abstract: No abstract text available
Text: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity: = ± 24°
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Original
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TSHA6500
2002/96/EC
200/95/EC
TSHA6500
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity
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Original
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TSTA7100
TSTA7100
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
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PDF
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Untitled
Abstract: No abstract text available
Text: TSHA6500 www.vishay.com Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Peak wavelength: p = 875 nm • High reliability • Angle of half intensity: = ± 24°
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Original
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TSHA6500
2002/96/EC
200/95/EC
TSHA6500
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: TSTA7500 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity
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Original
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TSTA7500
TSTA7500
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PDF
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TSHA5202
Abstract: TSHA520 TSHA5200 TSHA5201 TSHA5203
Text: TSHA5200, TSHA5201, TSHA5202, TSHA5203 Vishay Semiconductors Infrared Emitting Diode, 875 nm, GaAlAs FEATURES • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : Ø 5 Leads with stand-off Peak wavelength: λp = 875 nm
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Original
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TSHA5200,
TSHA5201,
TSHA5202,
TSHA5203
2002/95/EC
2002/96/EC
TSHA520.
11-Mar-11
TSHA5202
TSHA520
TSHA5200
TSHA5201
TSHA5203
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PDF
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Untitled
Abstract: No abstract text available
Text: TSTA7500 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity
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Original
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TSTA7500
TSTA7500
2002/95/EC
2002/96/EC
11-Mar-11
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PDF
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TSTA7100
Abstract: No abstract text available
Text: TSTA7100 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity
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Original
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TSTA7100
2002/95/EC
2002/96/EC
TSTA7100
18-Jul-08
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PDF
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Untitled
Abstract: No abstract text available
Text: TSTA7300 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: TO-18 • Dimensions in mm : ∅ 4.7 • Peak wavelength: λp = 875 nm • High reliability • High radiant power • High radiant intensity
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Original
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TSTA7300
TSTA7300
2002/95/EC
2002/96/EC
2002/95/EC.
2011/65/EU.
JS709A
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PDF
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