DNP331-8
Abstract: No abstract text available
Text: DNP331-8 Through-hole IRED/φ3 Wide Distribution Type Features φ3 type, Water clear epoxy Package Product features ・Total output Power : 16mW TYP. IF=50mA ・Wide Distribution ・Lead–free soldering compatible ・RoHS compliant Peak Wavelength 880nm
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DNP331-8
880nm
200pcs
DNP331-8
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OD-669
Abstract: OD-663 OD-666
Text: HIGH-POWER GaAlAs IRLED ILLUMINATOR .053 .067 .325 LED CHIPS .140 R REF. ONLY OD-663 FEATURES .142 .152 • Super high power output • 880nm peak emission EPOXY .084 .096 .342 R .480 1.225 1.255 .030 .426 .432 • Three chips connected in series • TO-66 header for good heat dissipation
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OD-663
880nm
100Hz
OD-669
OD-663
OD-666
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PS3G07S
Abstract: No abstract text available
Text: PS3G07S Through-hole Phototransistor/φ3 Type Features φ3 type, Water clear epoxy Package Product features ・Photo Current : 5.0mA TYP. VCE=5V,Ee=10mW/cm2 ・ Flat Lens ・Lead–free soldering compatible ・RoHS compliant Peak Sensitivity Wavelength 880nm
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PS3G07S
10mW/cm2)
880nm
200pcs
PS3G07S
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Untitled
Abstract: No abstract text available
Text: HIGH-POWER GaAlAs IR EMITTERS GLASS DOME .183 .186 FEATURES • High reliability liquid-phase epitaxially grown GaAlAs • 880nm peak emission for optimum matching with ODD-45W photodiode • Wide range of linear power output • Hermetically sealed TO-46 package
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880nm
ODD-45W
OD-880F
100Hz
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PIN photodiode 850nm
Abstract: PIN photodiode sensitivity 850nm 850nm MID-54H19
Text: T-1 3/4 PACKAGE PIN PHOTODIODE Description MID-54H19 Package Dimensions The MID-54H19 is a photodiode mounted in special Unit : mm inches dark end look plastic package and suitable for the ψ5.05 (.200) IRED (850nm/880nm) type. 5.47 (.215) 7.62 (.300)
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MID-54H19
MID-54H19
850nm/880nm)
40MIN.
50TYP.
00MIN.
PIN photodiode 850nm
PIN photodiode sensitivity 850nm
850nm
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MID-73H1C
Abstract: mid ir photodiode
Text: SIDE-LOOK PACKAGE PIN PHOTODIODE MID-73H1C Description Package Dimensions Unit : mm inches The MID-73H1C is a photodiode mounted in special dark plastic package and suitable for the IRED (850nm / 880nm) Type. 3.05 (.120) 7.5±0.12 (.295 3.00+0.120 (.118±.005)
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MID-73H1C
MID-73H1C
850nm
880nm)
00MIN.
mid ir photodiode
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1A225
Abstract: No abstract text available
Text: PRODUCT INFORMATION 880nm 1A225 High-Performance LED Compared with lasers and ELEDs, this device can reduce device costs in single-mode Ethernet networks. And since it’s packaged in a hermeti-cally sealed can, it achieves high reliability even in harsh operating environments.
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880nm
1A225
10/125m
1A225
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Untitled
Abstract: No abstract text available
Text: QSD2030F Plastic Silicon Photodiode Features • PIN photodiode ■ Package material and color: black epoxy ■ Package type: T-1 3/4 5mm lens diameter ■ High sensitivity ■ Wide reception angle, 40° ■ Peak sensitivity λ = 880nm ■ Daylight filter
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QSD2030F
880nm
245mm
245mm
QSD2030F
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OD-669
Abstract: No abstract text available
Text: HIGH-POWER GaAlAs IRLED ILLUMINATOR .053 .067 EPOXY LED CHIPS .140 R REF. ONLY .084 .096 .325 FEATURES .142 .152 .342 R 1.225 1.255 .030 .426 .432 OD-669 .480 .955 .965 • • • • • Highest power output available 880nm peak emission Nine chips connected in series
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OD-669
880nm
300mA
200mA
100Hz
OD-669
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OD-880FJ
Abstract: No abstract text available
Text: HI-REL GaAlAs IR EMITTERS FEATURES 1.00 MIN. GLASS DOME OD-880FJ ANODE CASE • High reliability LPE GaAlAs IRLEDs .209 .212 .015 • High power output • 880nm peak emission .183 .186 • Hermetically sealed TO-46 package .152 .154 .100 • MIL-S-19500 screening available
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OD-880FJ
880nm
MIL-S-19500
100mA
100Hz
OD-880FJ
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QEB373
Abstract: No abstract text available
Text: QEB373 Subminiature Plastic Infrared Emitting Diode Features • T-3/4 2mm Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 880nm, AlGaAs
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QEB373
880nm,
QSB363
QEB373
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OD-50J
Abstract: No abstract text available
Text: HI-REL GaAlAs IR EMITTERS OD-50J FEATURES .013 • High reliability LPE GaAlAs IRLEDs R .100 • High power output • 880nm peak emission .095 .125 .130 .150 • Four wire bonds on chip corners .410 .440 6-32 .324 .246 .332 .254 • MIL-S-19500 screening available
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OD-50J
880nm
MIL-S-19500
300mA
100Hz
OD-50J
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880NM
Abstract: wavelength-880
Text: MEGA-LED L IR ILLUMINATOR 25M 880NM TV6825 Specifications Wavelength 880 nm Angle of view 60° x 40° ± 10% Range ( 0.1 Lux / F1.0) 13m-26m Power consumption 1.5A max. Voltage supply 12V DC Dimensions (WxHxD) 110 x 100 x 51 mm Environment -30°C to +40°C
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880NM
TV6825
13m-26m
880NM
wavelength-880
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Untitled
Abstract: No abstract text available
Text: Infrared Emitter Product No: M TE8800N1 Peak Emission Wavelength: 880nm The MTE8800N1 consists of a 880nm high output infrared die in a water-clear 5mm plastic molded package. Custom package solutions and sorting are available. FEATURES APPLICATIONS > High Output Power
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TE8800N1
880nm
MTE8800N1
880nm
Volt-956-2980
MTE8800N1
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OD-88OWJ
Abstract: OD-880WJ 880nm
Text: OPTO DIODE CORP SSE » • bflOmfl 00001b2 S DO « O P D HI-REL GaAIAs IR EMITTERS OD-880WJ FEATURES • High reliability LPE GaAIAs IRLEDs • High power output • 880nm peak emission • Hermetically sealed TO-46 package • MIL-S-19500 screening available
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OD-88OWJ
880nm
MIL-S-19500
OD-88OWJ
OD-880WJ
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OD-50L
Abstract: 880nm
Text: OPTO DIODE CORP 5SE ]> • bfloma ÜQÜDIGT MTD m O P V SUPER HIGH-POWER GaAIAs IR EMITTERS QD-50L FEATURES • High reliability LPE Grown IR emitters • Ultra high power output • 880nm peak emission • Four wire bonded on die corners • Very narrow optical beam
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QD-50L
880nm
OD-50L
450mA
OD-50L
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OD-669
Abstract: AT25 diode b33
Text: OPTO DIODE CORP SSE D • □□□□124 7T7 ■ O HIGH-POWER GaAIAs ILLUMINATOR P D fj» OD-669 FEATURES • High reliability LPE GaAIAs IRLEDs • Highest power output available • 880nm peak emission • Nine chips connected in series • TO-66 header with BeO substrates for
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OD-669
880nm
OD-669
AT25
diode b33
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diode 16c
Abstract: OD-663
Text: OPTO DIODE CORP SSE D bûOmfl OOOOllfi MT3 • O P D ' 7 ^ ¿ / 7 - / ^ HIGH-POWER GaAIAs IRLED ILLUMINATOR OD-663 FEATURES • High reliability LPE GaAIAs IRLEDs • Super high power output • 880nm peak emission • Three chips connected in series • TO-66 header for good heat dissipation
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OD-663
880nm
OD-663
diode 16c
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OD-880FJ
Abstract: opto 101
Text: OPTO DIODE CORP SSE D • b f l O l T i ö ODDDlbfl TE'ì H O P D HI-REL GaAIAs IR EMITTERS — OD-880FJ FEATURES • High reliability LPE GaAIAs IRLEDs • High power output • 880nm peak emission • Hermetically sealed TO-46 package • MIL-S-19500 screening available
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OD-88OFJ
880nm
MIL-S-19500
OD-88OFJ
OD-880FJ
opto 101
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OD-8812
Abstract: No abstract text available
Text: SSE D OPTO DIODE CORP • b ö O m f l 0QQ0130 TTO « O P D ‘/-y/- I J HIGH-POWER GaAlAs T-13/4 IR EMITTERS OD-8812 FEATURES .217 • Cost effective plastic package .055 I I • Wide angle of emission 1'00 i m MIN J _ LJ T “ • 880nm peak emission [h
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T-13/4
OD-8812
880nm
OD-8812
T-13A
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Photosensor
Abstract: QPA8259 optologic
Text: HERMETIC PAIR OPTOELECTRONICS QPA8259 .0 30 0 .7 6 ' MAX .5 00 (1 2 .7 8 ) MIN PHOTOSENSOR INFRARED LED ST1661 NOTES: 1. DIM ENSIONS ARE IN INCHES [mm], 2. TOLERANCE IS ±.0 1 0 [.25] UNLESS OTHERWISE SPECIFIED. DESCRIPTION The QPA8259 consists of an 880nm AIGaAs LED
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QPA8259
ST1661
QPA8259
880nm
Photosensor
optologic
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Untitled
Abstract: No abstract text available
Text: E U AIGaAs INFRARED EMITTING DIODE F5G1 - t î Ef P - » The F5Q1 is an 880nm LED encapsulated in a clear, wide angle, sideiooker package. [-f- G re e n fri Color ¿fc- 3 I P Code T SCCÎION x -x LEAD PROFILE * Good apücaf to mechanical alignment SEATING
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880nm
ST1334
100mA
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Untitled
Abstract: No abstract text available
Text: SFH320 DAYLIGHT FILTER SFH 320FA Silicon NPN Phototransistor _ SMTTOPLED Dimensions in inches mm FEATURES • Especially suitable for applications - SFH 320:380 to 1150 nm - SFH 320FA: 880nm • High linearity • P-LCC-2 package
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SFH320
320FA
320FA:
880nm
SFH320FA
SFH320FA
SFH320/FA
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Untitled
Abstract: No abstract text available
Text: P H O T O S W IT C H P h o to electric S ensors R ig h tS ig h t S tandard D iffuse S tand ard O n/O ff S p ecificatio n s Typical R esp o n se C urve Field of View Emitter LED 5° Infrared 880nm Q D C o rd sets and A c cesso ries D escription D escription
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880nm
PNP/100mA
500mm
MOSFET/100mA
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