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    HYM71V8635ALT6-H

    Abstract: HYM71V8635ALT6-K HYM71V8635AT6 HYM71V8635AT6-H HYM71V8635AT6-K
    Text: 8Mx64 bits PC133 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V8635AT6 Series DESCRIPTION The Hynix HYM71V8635AT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original     		PDF 8Mx64 PC133 8Mx16 HYM71V8635AT6 8Mx64bits 8Mx16bits 400mil 54pin 168pin HYM71V8635ALT6-H HYM71V8635ALT6-K HYM71V8635AT6-H HYM71V8635AT6-K

    M366S0824ET0

    Abstract: M366S0824ET0-C1H M366S0824ET0-C1L
    Text: PC100 Unbuffered DIMM M366S0824ET0 M366S0824ET0 SDRAM DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S0824ET0 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC100 M366S0824ET0 M366S0824ET0 8Mx64 4Mx16, 400mil 168-pin M366S0824ET0-C1H M366S0824ET0-C1L

    DDR200

    Abstract: DDR266B HYMD186456-H HYMD186456-L
    Text: HYMD186456-H/L 8Mx64 Unbuffered DDR SDRAM DIMM PRELIMINARY DESCRIPTION Hynix HYMD186456-H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules DIMMs which are organized as 8Mx64 high-speed memory arrays. Hynix HYMD186456-H/L series consists of


    Original     		PDF HYMD186456-H/L 8Mx64 HYMD186456-H/L 184-pin 8Mx16 400mil 184pin DDR200 DDR266B HYMD186456-H HYMD186456-L

    Untitled

    Abstract: No abstract text available
    Text: 8M x 64 Bit 5V BUFFERED FPM DIMM Fast Page Mode FPM DRAM DIMM 64800s-D5rG34nD 168 Pin 8Mx64 FPM DIMM Buffered, 2/4k Refresh, 5V Pin Assignment General Description Pin# Front Side 1 Vss 2 DQ0 3 DQ1 4 DQ2 5 DQ3 6 Vcc 7 DQ4 8 DQ5 9 DQ6 10 DQ7 11 PQ8 12 Vss


    Original     		PDF 64800s-D5rG34nD 8Mx64 DS353-0

    Untitled

    Abstract: No abstract text available
    Text: M463L0914DT0 172pin DDR Micro SODIMM 64MB DDR SDRAM MODULE 8Mx64 based on 8Mx16 DDR SDRAM 172pin Micro DIMM 64-bit Non-ECC/Parity Revision 0.1 Jan. 2002 Rev. 0.0 Dec. 2001 M463L0914DT0 172pin DDR Micro SODIMM Revision History Revision 0.0 (Dec. 2001) 1. First release


    Original     		PDF M463L0914DT0 172pin 8Mx64 8Mx16 64-bit

    DS558

    Abstract: 6480A6EWS4G09TC
    Text: 8M x 64 Bit 3.3V UNBUFFERED EDO SODIMM Extended Data Out EDO DRAM SMALL OUTLINE DIMM 6480A6EWS4G09TC 144 Pin 8Mx64 EDO SODIMM Unbuffered, 4k Self Refresh, 3.3V with SPD General Description Pin Assignment Pin# The 6480A6EWS4G09TC is a 8Mx64 bit, 9 chip, 3.3V, 144 Pin SODIMM module consisting of (8) 8Mx8


    Original     		PDF 6480A6EWS4G09TC 8Mx64 256x8 A10/AP DS558-1 DS558

    pc133 SDRAM DIMM

    Abstract: 64814GSEM4G09T PC133
    Text: 8M x 64 Bit PC-133 SDRAM DIMM PC-133 SYNCHRONOUS DRAM DIMM 64814GSEM4G09T 168 Pin 8Mx64 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD General Description Pin Assignment The 64814GSEM4G09T is a 8Mx64 bit, 9 chip, 168 Pin DIMM module consisting of 8 2Mx8x4


    Original     		PDF PC-133 PC-133 64814GSEM4G09T 8Mx64 256x8 pc133 SDRAM DIMM PC133

    HYM7V65801BTFG-10S

    Abstract: HYM7V65801BTFG HYM7V65801BTFG-10P HYM7V65801BTFG-8
    Text: 8Mx64 bits PC100 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65801B F-Series DESCRIPTION The Hynix HYM7V65801B F-Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of eight 8Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on


    Original     		PDF 8Mx64 PC100 HYM7V65801B 8Mx64bits 400mil 54pin 168pin 64Mbytes HYM7V65801BTFG-10S HYM7V65801BTFG HYM7V65801BTFG-10P HYM7V65801BTFG-8

    Untitled

    Abstract: No abstract text available
    Text: 8Mx64 bits PC133 SDRAM Unbuffered DIMM based on 8Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM71V8635HCT6 Series DESCRIPTION The Hynix HYM71V8635HCT6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 8Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glass-epoxy


    Original     		PDF 8Mx64 PC133 8Mx16 HYM71V8635HCT6 8Mx64bits 8Mx16bits 400mil 54pin 168pin

    Untitled

    Abstract: No abstract text available
    Text: 8Mx64 bits Unbuffered DDR SDRAM SO-DIMM HYMD18M645A L 6-K/H/L DESCRIPTION Hynix HYMD18M645A(L)6-K/H/L series is unbuffered 200-pin double data rate Synchronous DRAM Small Outline Dual In-Line Memory Modules (SO-DIMMs) which are organized as 8Mx64 high-speed memory arrays. Hynix


    Original     		PDF 8Mx64 HYMD18M645A 200-pin 8Mx16 400mil 200pin

    HSD8M64B8A

    Abstract: No abstract text available
    Text: HANBit HSD8M64B8A Synchronous DRAM Module 64Mbyte 8Mx64-Bit , 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V Part No. HSD8M64B8A GENERAL DESCRIPTION The HSD8M64B8A is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of eight CMOS 2M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.


    Original     		PDF HSD8M64B8A 64Mbyte 8Mx64-Bit) 144pin HSD8M64B8A 400mil 144-pin HSD8M64B8

    kr 720

    Abstract: HSD8M64B4W HSD8M64B4W-10 HSD8M64B4W-10L HSD8M64B4W-12
    Text: HANBit HSD8M64B4W Synchronous DRAM Module 64Mbyte 8Mx64-Bit , 144pin SO-DIMM, 4Banks, 4K Ref., 3.3V Part No. HSD8M64B4W GENERAL DESCRIPTION The HSD8M64B4W is a 8M x 64 bit Synchronous Dynamic RAM high density memory module. The module consists of four CMOS 2M x 16 bit x 4banks Synchronous DRAMs in TSOP-II 400mil packages on a 144-pin glass-epoxy substrate.


    Original     		PDF HSD8M64B4W 64Mbyte 8Mx64-Bit) 144pin HSD8M64B4W 400mil 144-pin kr 720 HSD8M64B4W-10 HSD8M64B4W-10L HSD8M64B4W-12

    K4S281632C-TL1L

    Abstract: M466S1723CT2-L1L M466S1723CT3-L1L
    Text: SERIAL PRESENCE DETECT PC66 SODIMM PC66 SODIMM 144pin SPD Specification (128Mb C-die base) Rev. 0.1 May 2000 Rev 0.1 May 2000 SERIAL PRESENCE DETECT PC66 SODIMM M466S0924CT0-L1L, C1L • Organization : 8Mx64 • Composition : 8Mx16*4 • Used component part # : K4S281632C-TL1L, C1L


    Original     		PDF 144pin) 128Mb M466S0924CT0-L1L, 8Mx64 8Mx16 K4S281632C-TL1L, 000mil 4K/64ms 128bytes 256bytes K4S281632C-TL1L M466S1723CT2-L1L M466S1723CT3-L1L

    Untitled

    Abstract: No abstract text available
    Text: SM564083574NZ3R January 11, 2002 Orderable Part Numbers Module Part Number SM564083574NZ3R Description 8Mx64 64MB , SDRAM, 144-pin SODIMM Unbuffered, 8Mx16 Based, CL3, PC133 Revision History • January 11, 2001 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]


    Original     		PDF SM564083574NZ3R 8Mx64 144-pin 8Mx16 PC133 64MByte

    WED3DG649V-D1

    Abstract: No abstract text available
    Text: White Electronic Designs WED3DG649V-D1 64MB- 8Mx64 SDRAM, UNBUFFERED FEATURES DESCRIPTION PC100 and PC133 compatible Burst Mode Operation Auto and Self Refresh capability LVTTL compatible inputs and outputs Serial Presence Detect with EEPROM Fully synchronous: All signals are registered on the positive


    Original     		PDF WED3DG649V-D1 8Mx64 PC100 PC133 WED3DG649V WED3DG649V-D1

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M364C080 8 3CJ(T)0-C Buffered 8Mx64 DIMM (8Mx8 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb components are applied for this module. M364C080(8)3CJ(T)0-C DRAM MODULE M364C080(8)3CJ(T)0-C


    Original     		PDF M364C080 8Mx64 8Mx64bits 400mil 168-pin 100Max

    VDAAA2404

    Abstract: No abstract text available
    Text: V-Data VDAAA2404 PC-100/CL2 SDRAM Unbuffered DIMM 8Mx64bits SDRAM DIMM based on 8Mx16, 4Bank, 4K Refresh, 3.3V SDRAM General Description Features The VDAAA2404 is 8Mx64 bits Synchronous DRAM Modules, The modules are composed of four 8Mx16 bits CMOS Synchronous DRAMs in TSOP-II 400mil


    Original     		PDF VDAAA2404 PC-100/CL2 8Mx64bits 8Mx16, VDAAA2404 8Mx64 8Mx16 400mil 54pin 168pin

    HYM72V16M656BTU6

    Abstract: HYM72V16M656TU6-8 HYM72V16M656TU6-P HYM72V16M656TU6-S RA12
    Text: 16Mx64 bits PC100 SDRAM SO DIMM based on 16Mx16 SDRAM with LVTTL, 4 banks & 8K Refresh HYM72V16M656BTU6 Series DESCRIPTION The HYM72V16M656BTU6 Series are 8Mx64bits Synchronous DRAM Modules. The modules are composed of four 16Mx16bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 144pin glass-epoxy


    Original     		PDF 16Mx64 PC100 16Mx16 HYM72V16M656BTU6 8Mx64bits 16Mx16bits 400mil 54pin 144pin HYM72V16M656TU6-8 HYM72V16M656TU6-P HYM72V16M656TU6-S RA12

    Untitled

    Abstract: No abstract text available
    Text: IBM11T4645MP IBM11T8645MP 4M /8M x 64 144 PIN SO DIMM Features • Au contacts • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • 4M/8Mx64 Extended Data Out SO DIMM


    OCR Scan     		PDF IBM11T4645MP IBM11T8645MP 4M/8Mx64 VSs/18VCc 104ns

    8735C

    Abstract: No abstract text available
    Text: IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: -Non buffered for increased performance • 8Mx64, 8Mx72 Dual Bank Extended Data Out


    OCR Scan     		PDF IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8Mx64, 8Mx72 IBM11N8735C 8735C

    64172

    Abstract: No abstract text available
    Text: IBM11N8645H IBM11N8735H 8M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: -Non buffered for increased performance • 8Mx64, 8Mx72 Extended Data Out Page Mode DIMMs -Reduced noise 35 Vss/Vcc pins


    OCR Scan     		PDF IBM11N8645H IBM11N8735H 8Mx64, 8Mx72 104ns outp57 54H8530 000511b 64172

    47D5

    Abstract: 13T8644HPE-10T
    Text: IBM13T8644HPD IBM13T8644HPE One Bank 8M x 64 SDRAM SO DIMM Features • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual-In-line Memory Module • 8Mx64 Synchronous DRAM SO DIMM • Low Power • Performance: -360 -10 3 3 100 100 t;K Clock Cycle 10 10 i ns


    OCR Scan     		PDF IBM13T8644HPD IBM13T8644HPE 8Mx64 47D5 13T8644HPE-10T

    Untitled

    Abstract: No abstract text available
    Text: IBM11T4645MP IBM11T8645MP 4M /8M x 64 144 PIN SO DIMM Features • Au contacts • 144 Pin JEDEC Standard, 8 Byte Small Outline Dual In-line Memory Module with 8 Byte busses • Optimized for byte-write non-parity applications • 4M/8Mx64 Extended Data Out SO DIMM


    OCR Scan     		PDF IBM11T4645MP IBM11T8645MP 4M/8Mx64 256ms

    Untitled

    Abstract: No abstract text available
    Text: IBM 11 M8645H 8M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 8Mx64 Extended Data Out Mode DIMM • Optimized for ECC applications • System Performance Benefits: -Buffered inputs except RAS, Data • Performance:


    OCR Scan     		PDF M8645H 8Mx64 104ns