DIMM 72 pin out
Abstract: No abstract text available
Text: 8M x 72 Bit 3.3V BUFFERED EDO DIMM Extended Data Out EDO DRAM DIMM 72805sEDM2G39TK 168 Pin 8Mx72 EDO DIMM Buffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description The 72805sEDM2G39TK is a 8Mx72 bit, 39 chip, 3.3V, 168 Pin DIMM module consisting of (36) 4Mx4
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72805sEDM2G39TK
8Mx72
DS492-0
DIMM 72 pin out
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HYM7V73A801BTFG-75
Abstract: No abstract text available
Text: 8Mx72 bits PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V73A801B F-Series DESCRIPTION The Hynix HYM7V73A801B F-Series are 8Mx72bits ECC Synchronous DRAM Modules. The modules are composed of nine 8Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP
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8Mx72
PC133
HYM7V73A801B
8Mx72bits
400mil
54pin
168pin
64Mbytes
HYM7V73A801BTFG-75
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Untitled
Abstract: No abstract text available
Text: PC100 Registered DIMM M377S0823FT3 M377S0823FT3 SDRAM DIMM Intel 1.2 ver. Base 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S0823FT3 is a 8M bit x 72 Synchronous
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PC100
M377S0823FT3
M377S0823FT3
8Mx72
400mil
18-bits
24-pin
168pin
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PC133 registered reference design
Abstract: No abstract text available
Text: M390S0823FT1 PC133 Registered DIMM M390S0823FT1 SDRAM DIMM 8Mx72 SDRAM DIMM with PLL & Register based on 8Mx8, 4Banks 4K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S0823FT1 is a 8M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung
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M390S0823FT1
PC133
M390S0823FT1
8Mx72
400mil
18-bits
24-pin
168pin
PC133 registered reference design
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W3DG728V-D2
Abstract: No abstract text available
Text: White Electronic Designs W3DG728V-D2 64MB- 8Mx72 SDRAM W/ PLL, REGISTER AND SPD FEATURES DESCRIPTION The W3DG728V is a 8Mx72 synchronous DRAM module which consists of nine 8Mx8 SDRAM components in TSOP II package, two 18 bit Drive ICs for input control signal and
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W3DG728V-D2
8Mx72
W3DG728V
W3DG728V10D2
100MHz
W3DG728V7D2
133MHz
W3DG728V75D2
W3DG728V-D2
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WEDPNF8M722V-XBX
Abstract: No abstract text available
Text: White Electronic Designs WEDPNF8M722V-XBX 8Mx72 Synchronous DRAM + 16Mb Flash Mixed Module Multi-Chip Package ADVANCED* FEATURES n n Sector Architecture •One 16KByte, two 8KBytes, one 32KByte, and fifteen 64KBytes in byte mode Package: • 275 Plastic Ball Grid Array PBGA , 32mm x 25mm
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WEDPNF8M722V-XBX
8Mx72
16KByte,
32KByte,
64KBytes
WEDPNF8M722V-XBX
100MHz
100ns
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WED3DG728V-D2
Abstract: No abstract text available
Text: WED3DG728V-D2 64MB- 8Mx72 SDRAM W/ PLL, REGISTER AND SPD FEATURES DESCRIPTION n Burst Mode Operation The WED3DG728V is a 8Mx72 synchronous DRAM module which consists of nine 8Meg x 8 SDRAM components in TSOP11 package, two 18- bit Drive ICs for input control signal and one
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WED3DG728V-D2
8Mx72
WED3DG728V
TSOP11
WED3DG728V10D2
WED3DG728V7D2
WED3DG728V75D2
100MHz
WED3DG728V-D2
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Untitled
Abstract: No abstract text available
Text: WEDPN8M72V-XBX HI-RELIABILITY PRODUCT 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728 bits. Each chip is internally configured as a quad-bank DRAM with
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WEDPN8M72V-XBX
8Mx72
125MHz
WEDPN8M72V-XBX
64MByte
512Mb)
100MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN8M72VR-XBX HI-RELIABILITY PRODUCT 8Mx72 Registered Synchronous DRAM *PRELIMINARY FEATURES GENERAL DESCRIPTION • Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728
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WEDPN8M72VR-XBX
8Mx72
WEDPN8M72VR-XBX
64MByte
512Mb)
100MHz
66MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN8M72VR-XBX HI-RELIABILITY PRODUCT 8Mx72 Registered Synchronous DRAM ADVANCED* FEATURES GENERAL DESCRIPTION • Registered for enhanced performance of bus speeds of 66 MHz and 100 MHz The 64MByte 512Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 134,217,728
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WEDPN8M72VR-XBX
8Mx72
WEDPN8M72VR-XBX
64MByte
512Mb)
100MHz
66MHz
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Untitled
Abstract: No abstract text available
Text: WEDPN8M72V-XBX 8Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: • 219 Plastic Ball Grid Array PBGA , 32 x 25mm n Single 3.3V ±0.3V power supply n Fully Synchronous; all signals registered on positive edge of system clock cycle
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WEDPN8M72V-XBX
8Mx72
125MHz
WEDPN8M72V-XBX
64MByte
512Mb)
100MHz
125MHz
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Untitled
Abstract: No abstract text available
Text: KMM372V804CS DRAM MODULE KMM372V804CS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V804C is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372V804C consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in
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KMM372V804CS
KMM372V804CS
4Mx16
KMM372V804C
8Mx72bits
4Mx16bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: M372V0805DT0-C DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th generation of 64M components are applied to this module. M372V0805DT0-C M372V0805DT0-C DRAM MODULE M372V0805DT0-C Fast Page Mode
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M372V0805DT0-C
8Mx72
4Mx16
M372V0805DT0-C
8Mx72bits
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Untitled
Abstract: No abstract text available
Text: M372V080 8 3DJ(T)0-C DRAM MODULE Buffered 8Mx72 DIMM (8Mx8 base) Revision 0.0 Dec. 1999 DRAM MODULE Revision History Version 0.0 (Dec. 1999) • The 4th. generation of 64M DRAM components are applied to this module. M372V080(8)3DJ(T)0-C M372V080(8)3DJ(T)0-C
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M372V080
8Mx72
8Mx72bits
400mil
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Untitled
Abstract: No abstract text available
Text: IBM11N8845HB Preliminary 8M x 72 Super EOS Module Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 8Mx72 Extended Data Out Page Mode DIMMs • • Provides Chip-Kill ECC protection transparently to an existing Single Error Correction (SEC) system
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IBM11N8845HB
8Mx72
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Untitled
Abstract: No abstract text available
Text: IBM13N8739CC 8M x 72 2 Bank Unbuffered SDRAM Module Features • 168 Pin Unbuffered 8 Byte Dual In-line Memory Module • 8Mx72 Synchronous DRAM DIMM • Performance: j 10 j Units! CAS Latency 3 ! fcK I Clock Frequency jtcK j Clock Cycle iUc j Clock Access Time j
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IBM13N8739CC
8Mx72
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72-XM
Abstract: 7270m
Text: WHITE /MICROELECTRONICS W PD 8M 72-XM D C 8Mx72 DRAM DIM M FEATURES GENERAL DESCRIPTION Perform ance range: ^RAC ^C A C ^RC ^H P C W PD8M 72-60M DC 60ns 20ns 110ns 30ns W PD8M 72-70M DC 70ns 25ns 130ns 33ns The W P D8M 72-XM D C is a 8M x 72 bit Dynamic RAM high
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72-XM
8Mx72
24-pin
168-pin
7270m
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8735C
Abstract: No abstract text available
Text: IBM11N8645B IBM11N8735B IBM11N8645C IBM11N8735C 8M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: -Non buffered for increased performance • 8Mx64, 8Mx72 Dual Bank Extended Data Out
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IBM11N8645B
IBM11N8735B
IBM11N8645C
IBM11N8735C
8Mx64,
8Mx72
IBM11N8735C
8735C
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64172
Abstract: No abstract text available
Text: IBM11N8645H IBM11N8735H 8M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • System Performance Benefits: -Non buffered for increased performance • 8Mx64, 8Mx72 Extended Data Out Page Mode DIMMs -Reduced noise 35 Vss/Vcc pins
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IBM11N8645H
IBM11N8735H
8Mx64,
8Mx72
104ns
outp57
54H8530
000511b
64172
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M8730
Abstract: No abstract text available
Text: IBM11 M8730C IBM11 M8730CB 8M x 72 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module -Buffered inputs except RAS, Data -Reduced noise (32 Vss/Vcc pins) • 8Mx72 Dual Bank Fast Page Mode DIMM
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IBM11
M8730C
M8730CB
8Mx72
110ns
130ns
M8730
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SO DIMM 100 Pin Connector Pinout
Abstract: SO DIMM DRAM 144 Pin Connector Pinout
Text: IBM13M8734HCB Preliminary 8M x 72 1 Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module 8Mx72 Synchronous DRAM DIMM Performance: i -75A Reg. ; , j | DIMM CAS Latency I 4 : ; 133 100 MHz ! fd< i Clock Frequency i 7.5 ! 10.0 j ns !
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IBM13M8734HCB
168-Pin
8Mx72
100MHz
133MHz
SO DIMM 100 Pin Connector Pinout
SO DIMM DRAM 144 Pin Connector Pinout
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Untitled
Abstract: No abstract text available
Text: IBM11 M8735C IBM11 M8735CB 8M x 72 DRAM MODULE Features System Performance Benefits: • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 8Mx72 Dual Bank Extended Data Out Mode DIMM • Performance: : -50 : -60 : -70 RAS Access Tim e 50ns 60ns
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IBM11
M8735C
M8735CB
8Mx72
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tf12n
Abstract: No abstract text available
Text: IBM13M8734HCD P relim inary 8M x 72 1 B ank R eg istered/B uffered S D R A M M odule Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 8Mx72 Synchronous DRAM DIMM • Performance: ; -10 : -260 • -360 ; -360 : U nits: \ Device Latency
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IBM13M8734HCD
168-Pin
8Mx72
66/100MHz
PC100
tf12n
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Untitled
Abstract: No abstract text available
Text: Discontinued 9/98 - Iasi order; 3/93 » las! ship IBM11M8735H 8M x 72 DRAM Module Features • 168-Pin JEDEC-Standard 8-Byte Dual In-Line Memory Module Optimized for ECC applications System Performance Benefits: • 8Mx72 Extended Data Out Mode DIMM -Buffered inputs (except RAS, Data)
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IBM11M8735H
168-Pin
8Mx72
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