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    8V SMD MOSFET Search Results

    8V SMD MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    8V SMD MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    L7667mja

    Abstract: 7705302EA 8100622E 5962-8766001GC 5962-8877002PA L7667 5962-8987701EA 5962-87802012c DG405AZ MX7572SM
    Text: SCOPE: +8V-CHANNEL/DUAL 4-CHANNEL MONOLITHIC CMOS, ANALOG MULTIPLEXER Device Type 01 Generic Number MAX358M x /883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter MAXIM SMD JE E LP 2 Mil-Std-1835 Case Outline


    Original     		MAX358M /883B Mil-Std-1835 GDIP1-T16 CDIP2-T16 CQCC1-N20 20-Pin 040SM 8100620EA L7667mja 7705302EA 8100622E 5962-8766001GC 5962-8877002PA L7667 5962-8987701EA 5962-87802012c DG405AZ MX7572SM PDF

    5962-8980501CA

    Abstract: 8100622EA DG201S m5959 8100616EA 7705203E 932540 5962-8686102XC 5962-8987701EA 5962-8948102va
    Text: SCOPE: +8V-CHANNEL/DUAL 4-CHANNEL MONOLITHIC CMOS, ANALOG MULTIPLEXER Device Type 01 Generic Number MAX358M x /883B Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows: Outline Letter MAXIM SMD JE E LP 2 Mil-Std-1835 Case Outline


    Original     		MAX358M /883B Mil-Std-1835 GDIP1-T16 CDIP2-T16 CQCC1-N20 20-Pin 616EA IH5047MJE/883B 5962-8980501CA 8100622EA DG201S m5959 8100616EA 7705203E 932540 5962-8686102XC 5962-8987701EA 5962-8948102va PDF

    A5SHB

    Abstract: No abstract text available
    Text: MOSFET SMD Type P-Channel MOSFET KI2305 DS SOT-23-3 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features ● VDS V = -8V ● RDS(ON)＜0.108 Ω (VGS = -1.8V) 1 D 0.55 ● RDS(ON)＜0.071 Ω (VGS = -2.5V) +0.1 1.3-0.1 +0.1 2.4-0.1 ● RDS(ON)＜0.052 Ω (VGS = -4.5V)


    Original     		KI2305 OT-23-3 A5SHB PDF

    KRF7410

    Abstract: mosfet 407 P-Channel 1.8V MOSFET
    Text: IC IC SMD Type HEXFET Power MOSFET KRF7410 Features Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS -20 V Continuous Drain Current, VGS @ -4.5V @ Ta = 25 ID -16


    Original     		KRF7410 KRF7410 mosfet 407 P-Channel 1.8V MOSFET PDF

    A08K

    Abstract: a08k transistor SMD TRANSISTOR mosfet marking pd
    Text: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3416 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON ＜ 26mΩ (VGS = 2.5V) 0.55 ● RDS(ON) ＜ 22mΩ (VGS = 4.5V) +0.2 1.6 -0.1 +0.2 2.8-0.2 ● ID = 6.5 A 0.4


    Original     		KO3416 OT-23-3 A08K a08k transistor SMD TRANSISTOR mosfet marking pd PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET IC DIP Type SMD Type Type Product specification 2N7002K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low Gate Threshold Voltage 0.4 3 Low On-Resistance: RDS ON 1 Fast Switching Speed 0.55 Low Input Capacitance 2 +0.1


    Original     		2N7002K OT-23 PDF

    702 TRANSISTOR smd

    Abstract: 702 TRANSISTOR smd SOT23 70.2 TRANSISTOR smd 702 5 TRANSISTOR smd DIODE smd marking 702 smd transistor 702
    Text: MOSFET SMD Type N-Channel Enhanceent Mode Field Effect Transistor 2N7002K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Low Gate Threshold Voltage 0.4 3 Low On-Resistance: RDS ON 1 Fast Switching Speed 0.55 Low Input Capacitance


    Original     		2N7002K OT-23 702 TRANSISTOR smd 702 TRANSISTOR smd SOT23 70.2 TRANSISTOR smd 702 5 TRANSISTOR smd DIODE smd marking 702 smd transistor 702 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Complementary N- and P-Channel MOSFET Half-Bridge KI4501ADY Features TrenchFET Power MOSFET Absolute Maximum Ratings TA = 25 Parameter N-Channel Symbol 10 sec Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25


    Original     		KI4501ADY PDF

    SOT-23

    Abstract: MOSFET 2301 SOT-23 SMD WAG FMS2301 MOSFET 2301 POWER MOSFET P1 smd marking code 2301 marking sot-23
    Text: SMD MOSFET Formosa MS FMS2301 List List. 1 Package outline. 2 Features. 2


    Original     		FMS2301 120sec 260sec 30sec DS-231129 SOT-23 MOSFET 2301 SOT-23 SMD WAG FMS2301 MOSFET 2301 POWER MOSFET P1 smd marking code 2301 marking sot-23 PDF

    waag

    Abstract: No abstract text available
    Text: SMD MOSFET Formosa MS FMS2301A List List. 1 Package outline. 2 Features. 2


    Original     		FMS2301A 120sec 260sec 30sec DS-231172 waag PDF

    PD54003L

    Abstract: No abstract text available
    Text: DB-54003L-175A RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 155 - 175MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 65% - 69%


    Original     		DB-54003L-175A PD54003L 175MHz DB-54003L-175A DB-54003-470 PD54003 PDF

    1uF, 50V, AVX Corporation

    Abstract: CAPACITOR SMD 16v 220 u 12105C475KAT2A visteon 20R0 SMD RESISTANCE power supply 100v 30a schematic schematic diagram PWM 12V 30a mccoy on semiconductor zener 13v smd
    Text: ON Semiconductor Confidential – NDA Required Design Note – DN06056/D Power Supply For Audio Class D Amplifier Device CS51221 Application Input Voltage Output Voltage Output Current Topology Audio 7.6-45 V 18V 8.3A Boost Table 1: CS51221 Audio Power Supply


    Original     		DN06056/D CS51221 CS51221 1uF, 50V, AVX Corporation CAPACITOR SMD 16v 220 u 12105C475KAT2A visteon 20R0 SMD RESISTANCE power supply 100v 30a schematic schematic diagram PWM 12V 30a mccoy on semiconductor zener 13v smd PDF

    diode 018 smd

    Abstract: idm 73
    Text: IC IC SMD Type P-Channel 1.8-V G-S MOSFET KI4403BDY Features TrenchFET Power MOSFET Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 sec Steady State Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS 8 V Continuous Drain Current (TJ=150 ) * TA=25


    Original     		KI4403BDY diode 018 smd idm 73 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Dual N-Channel Enhancement Mode MOSFET FTD2019 TSSOP-8 • Features Unit: mm ● RDS ON =28mΩ Max. @VGS=4V ● RDS(ON)=35mΩ Max. @VGS=2.5V D1 D2 S1 S2 S1 S2 D1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2


    Original     		FTD2019 PDF

    9926b

    Abstract: No abstract text available
    Text: MOSFET SMD Type Dual N-Channel MOSFET SI9926BDY • Features SOP-8 ● RDS on = 0.027 Ω @ VGS = 4.5 V ● RDS(on) = 0.036 Ω @ VGS = 2.5 V. D1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 D2 G2 G1 S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol


    Original     		SI9926BDY 9926B 9926b PDF

    V1522

    Abstract: No abstract text available
    Text: IC IC SMD Type P-Channel 20-V D-S MOSFET KI5433DC Features Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 )* TA = 25 ID Maximum Power Dissipation *


    Original     		KI5433DC V1522 PDF

    Untitled

    Abstract: No abstract text available
    Text: IC IC SMD Type Dual P-Channel 1.8-V G-S MOSFET KI5905DC Features Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 )* TA = 25 ID TA = 85 Pulsed Drain Current 5 secs -8 4.1


    Original     		KI5905DC PDF

    P Channel Low Gate Charge

    Abstract: KTHD3100C
    Text: IC IC SMD Type Power MOSFET KTHD3100C Features Complementary N-Channel and P-Channel MOSFET Leadless SMD Package Provides Great Thermal Characteristics Trench P-Channel for Low On Resistance Low Gate Charge N-Channel for Test Switching Absolute Maximum Ratings Ta = 25


    Original     		KTHD3100C P Channel Low Gate Charge KTHD3100C PDF

    TSSOP-8 footprint

    Abstract: KI8205A g1 smd transistor SMD TRANSISTOR G1 MOSFET TSSOP-8 dual n-channel smd transistor S1 1A smd mosfet 78 DIODE SMD MOSFET TSSOP-8 smd diode JC
    Text: MOSFET SMD Type Dual N-Channel Enhancement Mode Field Effect Transistor KI8205A TSSOP-8 Features Unit: mm ● Small footprint due to small and thin package ● Low drain-source ON resistance: r DS on = 0.025 @ VGS = 4.5 V Max rDS(on) = 0.029 @ VGS = 2.5V Max


    Original     		KI8205A TSSOP-8 footprint KI8205A g1 smd transistor SMD TRANSISTOR G1 MOSFET TSSOP-8 dual n-channel smd transistor S1 1A smd mosfet 78 DIODE SMD MOSFET TSSOP-8 smd diode JC PDF

    smd diode S2

    Abstract: S16G1 POWER MOSFET Rise Time 1 ns 1A smd mosfet equivalent smd mosfet KI8205T 8v smd mosfet DIODE S2 mosfet smd mpf164
    Text: MOSFET SMD Type Dual N-Channel High Density Trench MOSFET KI8205T Unit: mm Features Super high dense cell trench design for low RDS on . Rugged and reliable. Surface Mount package. 1 pin mark D1 D2 G1 S1 1 6 G1 D1/D2 2 5 D1/D2 S2 3 4 G2 G2 S1 S2 Absolute Maximum Ratings Ta = 25


    Original     		KI8205T 250uA smd diode S2 S16G1 POWER MOSFET Rise Time 1 ns 1A smd mosfet equivalent smd mosfet KI8205T 8v smd mosfet DIODE S2 mosfet smd mpf164 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type Dual N-Channel Enhancement Mode Field Effect Transistor KI8205A TSSOP-8 Features Unit: mm 6.5 A, 20 V. rDS on = 0.025 @ VGS = 4.5 V rDS(on) = 0.029 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage


    Original     		KI8205A PDF

    Untitled

    Abstract: No abstract text available
    Text: IC IC SMD Type N-Channel 2.5-V G-S MOSFET KI5406DC Features TrenchFET Power MOSFETS: 2.5-V Rated Low Thermal Resistance Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS 12 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150


    Original     		KI5406DC PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type Dual N-Channel MOSFET SI9926DY • Features SOP-8 ● RDS on ≤ 0.032 Ω @ VGS = 4.5 V ● RDS(on) ≤ 0.045 Ω @ VGS = 2.5 V. D1 G1 D2 G2 S1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 Top View ■ Absolute Maximum Ratings Ta = 25℃ Parameter


    Original     		SI9926DY PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type Dual N-Channel MOSFET SI9926DY • Features TSSOP-8 ● RDS on ≤ 0.032 Ω @ VGS = 4.5 V Unit: mm ● RDS(on) ≤ 0.045 Ω @ VGS = 2.5 V. D1 D2 S1 S2 S1 S2 G1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2


    Original     		SI9926DY 9926D PDF