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    900MH Search Results

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    900MH Price and Stock

    NXP Semiconductors 900MHZ-AMP-EVK

    EVAL BOARD FOR DNT90
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    DigiKey 900MHZ-AMP-EVK Bulk 1
    • 1 $105.57
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    Abracon Corporation ATCA-05-900M-H

    FIXED IND 90UH 5A 34 MOHM TH
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    DigiKey ATCA-05-900M-H Tray 2,016
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    Avnet Americas ATCA-05-900M-H Tray 12 Weeks 2,016
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    Avnet Abacus ATCA-05-900M-H 14 Weeks 2,016
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    Abracon Corporation ATCA-02-900M-H

    FIXED IND 90UH 3A 44 MOHM TH
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    DigiKey ATCA-02-900M-H Tray 2,000
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    Avnet Americas ATCA-02-900M-H Tray 12 Weeks 2,000
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    Mouser Electronics ATCA-02-900M-H
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    Avnet Abacus ATCA-02-900M-H 14 Weeks 2,000
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    ITG Electronics Inc PFC433835B-900MHF

    PFC CHOKE 90.0UH 50.0A 6.0M
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    DigiKey PFC433835B-900MHF Bulk
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    ITG Electronics Inc PFC282820B-900MHF

    PFC CHOKE 90.0UH, 28.0A, 12.5 M
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    DigiKey PFC282820B-900MHF Bulk 2
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    900MH Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    900MHAP2 Philips Semiconductors 900MHz Driver-Amplifier with Enable-Swich using the BFG425W Original PDF
    900MHZ Philips Semiconductors Low noise 900MHz preamplifier at 3 V Scan PDF
    900MHZ6 Philips Semiconductors GSM power amplifier for 900MHz at 6V Scan PDF
    900MHZ-AMP-EVK Freescale Semiconductor RF Evaluation and Development Kits, Boards, RF/IF and RFID, KIT EVALUATION AMPLIFIER 900MHZ Original PDF
    900MHZDR Philips Semiconductors 900MHz Driver-Amplifier with the BFG425W Original PDF
    900MHz Driver-Amplifier with the BFG425W NXP Semiconductors 900MHz Driver-Amplifier with the BFG425W Original PDF
    900 MHz Driver with the BFG480W NXP Semiconductors 900 MHz Driver with the BFG480W Original PDF
    900MHz LOW NOISE AMPLIFIER WITH THE BFG403W NXP Semiconductors 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W Original PDF

    900MH Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: RF2870 RoHS Compliant & Pb-Free Product CDMA LOW NOISE AMPLIFIER/MIXER 900MHz DOWNCONVERTER Typical Applications • CDMA Cellular Systems • General Purpose Downconverter • JCDMA Cellular Systems • Commercial and Consumer Systems • AMPS Cellular Systems


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    RF2870 900MHz RF2870 IPC-SM-782 PDF

    Untitled

    Abstract: No abstract text available
    Text: RF2314 GENERAL PURPOSE LOW NOISE AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOT 5-Lead Features       150MHz to 2500MHz Operation 2.7V to 6.0V Single Supply +18dBm Output IP3 at 5V 14dB Gain at 900MHz 8.6dB Gain at 900MHz


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    RF2314 150MHz 2500MHz 18dBm 900MHz 1900MHz RF2314 2002/95/EC DS121024 PDF

    R-PDSO-G5 board layout

    Abstract: OPA2658 OPA658 OPA658U OPA658UB
    Text: OPA658 OPA 658 OPA 658 SBOS045A – MARCH 1994 – REVISED JUNE 2003 Wideband, Low-Power, Current-Feedback Operational Amplifier FEATURES DESCRIPTION ● UNITY-GAIN STABLE BANDWIDTH: 900MHz ● LOW POWER: 50mW ● LOW DIFFERENTIAL GAIN/PHASE ERRORS: 0.025%/0.02°


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    OPA658 SBOS045A 900MHz 135MHz OPA658 R-PDSO-G5 board layout OPA2658 OPA658U OPA658UB PDF

    telemetry block diagram

    Abstract: HFA3600 HFA3600IB IS-54 schematic diagram UPS active power 600 LNA for WIRELESS APPLICATIONS FROM 100 MHz - 800Mhz HA3600 S11L
    Text: HFA3600 NO RE U CT NT PROD E T E CEME L OBSO DED REPLA Data Sheet EN COMM August 2002 FN3655.5 Low-Noise Amplifier/Mixer Features The HFA3600 is a silicon Low-Noise Amplifier with high performance characteristics allowing the design of very sensitive, wide dynamic-range 900MHz receivers with


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    HFA3600 FN3655 HFA3600 900MHz 900MHz telemetry block diagram HFA3600IB IS-54 schematic diagram UPS active power 600 LNA for WIRELESS APPLICATIONS FROM 100 MHz - 800Mhz HA3600 S11L PDF

    Untitled

    Abstract: No abstract text available
    Text: RFCR2310 RFCR2310 900MHz to 930MHz Single Junction Drop-In Circulator 900MHz TO 930MHz SINGLE JUNCTION DROP-IN CIRCULATOR Package: Drop-in, 1in x 1in Features  Typical Insertion Loss Less than 0.2dB  -70dBc IMD Typical  Isolation Greater than 23dB


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    RFCR2310 900MHz 930MHz -70dBc RFCR2310 DS120501 PDF

    FPM21500QFN

    Abstract: 33PF FPM21500 roger 4350
    Text: EB21500QFN-AB FPM21500QFN 0.9GHz LNA EVALUATION BOARD FEATURES Measured @ 900MHz • 23 dBm Output Power • 18.3 dB Small Signal Gain • 0.45 dB Noise Figure • 34 dBm OIP3 measured @ Pout = 8dBm per tone ● Bias 3V, 70mA DESCRIPTION AND APPLICATIONS


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    EB21500QFN-AB FPM21500QFN 900MHz FPM21500QFN; 33PF FPM21500 roger 4350 PDF

    9421

    Abstract: FPD2250SOT89
    Text: EB2250SOT89BB FPD2250SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured at 900MHz 28dBm Output Power 17dB Gain 39dBm OIP3 @ 18dBm Pout Total Power Noise Figure 1.2dB Bias 5V, 300mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively


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    EB2250SOT89BB FPD2250SOT89 900MHz 28dBm 39dBm 18dBm 300mA FPD2250SOT89; 2250m 30mil 9421 PDF

    KESTX01

    Abstract: KESTX02
    Text: KESTX01/KESTX02 At 900MHz Application Note AN4807 The KESTX01 and KESTX02 are designed for use in the 290-470MHz region, with a push-pull output stage designed to reduce second harmonic emissions when a suitable balanced output circuit is used. There is a


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    KESTX01/KESTX02 900MHz AN4807 KESTX01 KESTX02 290-470MHz 900MHz KESTX01 PDF

    STB7101

    Abstract: GP 113
    Text: STB7101 0.9/1.9GHz BROAD BAND PRE-POWER AMPLIFIER • OPERATING FREQUENCY 900-900MHz • OUTPUT POWER 9.8dBm typ. @ 900MHz 7.5dBm typ. @ 900MHz • POWER GAIN GP = 20.3dB typ. @ 900MHz GP = 20.5dB typ. @ 900MHz SOT323-6L SC70 ORDER CODE STB7101 BRANDING


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    STB7101 900-1900MHz 900MHz 1900MHz OT323-6L STB7101, 900MHz STB7101 GP 113 PDF

    Untitled

    Abstract: No abstract text available
    Text: AC4790-1X1 900MHz Radio Module Innovative Technology for a Connected World THE FASTEST WAY TO WIRELESS Laird Technologies’ tiny AC4790-1x1 radio modules put the power of a pre-configured peer-to-peer protocol into the smallest, most cost-sensitive wireless applications. Despite


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    AC4790-1X1 900MHz AC4790-1x1 AC4790-1x1â PDF

    FA01215

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR GaAs FET FA01215 GaAs FET HYBRID IC DESCRIPTION FA01215 is RF Hybrid IC designed for 900MHz band 14.7 small size handheld radio. 14.2 0.6 2 3.5 Unit:mm 2 3.5 2 FEATURES • Low voltage 3.0V • High gain 24dB typ. • High efficiency


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    FA01215 FA01215 900MHz PDF

    900MHZ

    Abstract: IPC-SM-782 RF6100-1 RF6100-1PCBA-41X capacitor 100 micro F
    Text: RF6100-1 3V 900MHZ LINEAR POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Typical Applications • 3V CDMA/AMPS Cellular Handset • Spread-Spectrum System • 3V CDMA20001/X Cellular Handset Product Description Optimum Technology Matching Applied


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    RF6100-1 900MHZ CDMA20001/X 203mm 330mm 025mm IPC-SM-782 RF6100-1 RF6100-1PCBA-41X capacitor 100 micro F PDF

    SR8800LPQ1357BY

    Abstract: LINE FILTER FOR 900MHZ MAX2620 MAX2620EUA MAX2620EVKIT SMV1204-34 ceramic coaxial resonators
    Text: MAX2620 Evaluation Kit _Component List DESIGNATION QTY DESCRIPTION _Features ♦ Complete, Tunable VCO Test Board with Tank Circuit ♦ Tuning in 900MHz Frequency Range ♦ Low Phase Noise -110dBc/Hz typical at 25kHz


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    MAX2620 900MHz -110dBc/Hz 25kHz 1000pF, SR8800LPQ1357BY LINE FILTER FOR 900MHZ MAX2620EUA MAX2620EVKIT SMV1204-34 ceramic coaxial resonators PDF

    74014

    Abstract: ic ta 7699 ic 7905 790081 74948 13128 top mark LC sc70-6 38117 ic 7809 datasheet MAX2642EXT-T
    Text: 19-1682; Rev 0; 4/00 UAL IT MAN TION K A ET U E L H A S EV TA WS DA FOLLO 900MHz SiGe, High IP3, Low-Noise Amplifiers Features ♦ Wide Frequency Range: 800MHz to 1000MHz ♦ High Output IP3 and Adjustable +17dBm at 5.3mA +7dBm at 2.8mA ♦ Low Noise Figure: 1.3dB at 900MHz


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    900MHz 800MHz 1000MHz 17dBm 900MHz MAX2642) SC70-6 800MHz/900MHz MAX2642EXT-T SC70-6 74014 ic ta 7699 ic 7905 790081 74948 13128 top mark LC sc70-6 38117 ic 7809 datasheet MAX2642EXT-T PDF

    MGCM02

    Abstract: MGCT04 90dB AGC Amplifier VHF oscillator 900mhz Diplexer
    Text: MGCT04 Transmit Circuit for TDMA/AMPS and CDMA/AMPS Preliminary Information Features • • • • • • DS5424 Dual RF Ports for 900MHz and 900MHz AGC Amplifier with 90dB of Variable Gain, Fully Compensated for Temperature On-chip Active Filter Removes the


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    MGCT04 DS5424 900MHz 1900MHz 1900MHz MGCT04 900MHz/PCS1900MHz MGCT04/KG/LH1S MGCT04/Kl MGCM02 90dB AGC Amplifier VHF oscillator 900mhz Diplexer PDF

    S-AU25

    Abstract: SAU25
    Text: i TOSHIBA RF POWER AMPLIFIER MODULE - S-AU25 900MHz UHF POWER AMPLIFIER MODULE EUROPE CELLULAR RADIO FEATURES : Unit in mm . Built-in Driver Stage 2-R2.1±a2 . Output Power (6W) is Directly Gained by VCO(lmW). %


    OCR Scan
    S-AU25 900MHz -----------------------------------S-AU25 15000pF, S-AU25 SAU25 PDF

    F 711

    Abstract: TOSHIBA RF Power Module
    Text: RF POWER AMPLIFIER MODULE S-AU9 900MHz UHF POWER AMPLIFIER MODULE Unit in mm MCA FEATURES : 2-R2.1±CL2 . Output Power : P0 SS14W . Minimum Gain : Gp=18.4dB . Efficiency : M a 7^' S3 5% û5±ai5 . 50 0 Input/Output Impedance Uâ^ . Guaranteed Stability 25.4


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    900MHz SS14W 200mW, 1500pF, 10/iF F 711 TOSHIBA RF Power Module PDF

    07027

    Abstract: 1.0037
    Text: SIEMENS BFP 193W NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • ¿r = 8GHz F =1.3dB at 900MHz Package BFP193W SOT-343 RCs Q62702-F1577 1= E 2=C 3=E CÛ !l ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    900MHz BFP193W Q62702-F1577 OT-343 BFP193W 07027 1.0037 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 181 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA • fT = 8GHz F=1.45dB at 900MHz SOT-23 RFs Q62702-F1314 1= B 2=E o Package BFR 181 II CO ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    900MHz Q62702-F1314 OT-23 BFR181 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 280W NPN S ilicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • *r = 7.5GHz F= 1.5dEJ at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    900MHz Q62702-F1494 OT-323 PDF

    S-AU30

    Abstract: No abstract text available
    Text: TOSHIBA RF POWER AMPLIFIER MODULE S-AU30 Unit in mm 900MHz UHF POWER AMPLIFIER MODULE USA CELLULAR RADIO 4.8JZS + Q 3 . Output Power : P o ^ 6 W . Minimum Gain : Gp=17.7dB . Efficiency : 7 t ÌS30% . 50 il Input/Output Impedance + Û2 5-a5-Ql . Guaranteed Stability


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    S-AU30 900MHz 100mW, 100mW S-AU30 PDF

    ELF 850 C

    Abstract: rf power amplifier 850 MHZ RF2104 ELF 850 B
    Text: RF2104 MICRO‘DEVICES MEDIUM POWER AMPLIFIER Typ ical A p plicatio ns • 900MHz ISM Band Applications • Portable Battery Powered Equipment • 400MHz Industrial Radios • Commercial and Consumer Systems • Driver for Higher Power Applications • Base Station Equipment


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    RF2104 900MHz 400MHz RF2104 1000MHz. 16-lead TG04131 ELF 850 C rf power amplifier 850 MHZ ELF 850 B PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAsMMIC> 00M077 37, • MGF7108A UHF BAND GaAs POWER AMPLIFIER IC DESCRIPTION OUTLINE DRAWING MGF7108A is a GaAs monolithic microwave integrated circuits for Unit:millimeters use in 900MHz band power amplifiers. @ Va c FEATURES NU


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    00M077 MGF7108A MGF7108A 900MHz 925MHz PDF

    135nH

    Abstract: No abstract text available
    Text: 1. Dimensions: I— 0.071 2. Schematic: Max - H oÛ.044 Max \ Orange dot o- 3. Electrical Specs: 0.015 0.040 Max OCL 72nH±5% OCL 82nH Typ 900MHz, 0.1V OCL 135nH Typ 1,7GHz, 0.1V 150MHz, 0.1V □ C Res.: 0 .4 9 0 Ohms Max DC Current: 400m Adc p - 0.034 - |


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    150MHz, 900MHz, 135nH 400mAdc 150MHz 900MHz MIL-ST0-202G, 1700MHz UL94-V-0 E151S56 PDF