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    92GS4 Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    f25n06l

    Abstract: F25N06 RFP2506L RFP25N06L an7254 TA9638
    Text: Logic-Level Power MOSFETs RFP25N06L File Number 2044 N-Cnannel Logic Level Power Field-Effect Transistors L2FET 25 A, 50 V - 60 V rDs(on) = 0.085 O Features: N-CHANNEL ENHANCEMENT MODE • Design optim ized fo r 5 volt gate drive ■ Can be driven directly from Q-MOS,


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    RFP25N06L RFP25N06L* CATOFP25N0GLCF2 92CS-37075 AN7254 AN7260. f25n06l F25N06 RFP2506L RFP25N06L TA9638 PDF

    2N6786

    Abstract: No abstract text available
    Text: Standard Power MOSFETs 2N6786 T j , JUNC TION TEMPERATURE fC T j, JUNCTION TEMPERATURE *C) 92GS-4412? Fig. 8 - B re a k d o w n v o lta g e vs. te m p e ra tu re . O 10 20 30 92GS-44128 Fig. 9 - N o rm a liz e d o n -re s is ta n c e vs. te m p e ra tu re .


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    2N6786 92GS-44129 92GS-44131 92GS-44132 2N6786 PDF

    irfp 9240

    Abstract: irfp 240 IRFP p-channel irfp9240
    Text: HARRIS IR F P 9 2 4 0 /P 9 2 4 1 IR FP 9242/P 9243 Avalanche Energy Rated P-Channel Power MOSFETs May 1992 Package Features T O -2 4 7 • -10A and -12A , -2 0 0 V and -15 0 V T O P VIEW • fDS ON = 0 .5 0 ft and 0.7ft • Single Pulse Avalanche Energy Rated


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    9242/P IRFP9240, IRFP9241, IRFP9242 IRFP9243 92CS-43281 irfp 9240 irfp 240 IRFP p-channel irfp9240 PDF

    irf*234 n

    Abstract: IRF235 sm 4205 IRF234d GE-X8
    Text: IRF234, IRF235 IRF236, IRF237 21 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated May 1992 Package Features T O -2 0 4 A A • 8.1A and 6.5A, 275V - 250V B O T T O M VIEW • rD S °n = 0 -4 5 0 and 0 .6 8 ÎÎ • Single Pulse Avalanche Energy Rated


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    IRF234, IRF235 IRF236, IRF237 IRF235, IRF237 irf*234 n sm 4205 IRF234d GE-X8 PDF

    IRF254

    Abstract: IRF255 IRF256 IRF257 IIRF257 IRF25
    Text: Rugged Power MOSFETs IRF254, IRF255 IRF256, IRF257 File Number 2300 Avalanche-Energy-Rated N-Channel Power MOSFETs 22 A and 20 A, 275 V and 250 V rDsioni = 0.14 O and 0.17 Q n -c h a n n e l e n h a n c e m e n t m ode U Features: • Single pulse avalanche energy rated


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    IRF254, IRF255 IRF256, IRF257 92CS-42650 IRF255, IRF256 IRF257 IRF25 IRF254 IIRF257 IRF25 PDF

    IRFP9240R

    Abstract: IFP92 IRFP9243R 9243 IRFP IRFP9240 IRFP9241 IRFP9241R IRFP9242R
    Text: _ Rugged Power MOSFETs File Num ber IRFP9240R, IRFP9241R, IRFP9242R, IRFP9243R 2294 Avalanche-Energy-Rated P-Channel Power MOSFETs -10 A and -12 A, 200 V and 150 V rDston = 0.50 fi and 0.70 fi TERMINAL DIAGRAM D Features: • S ingle pulse avalanche energy rated


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    IRFP9240R, IRFP9241R, IRFP9242R, IRFP9243R 92CS-43262 IRFP9242R 9243R IFP92 IRFP9240R IRFP9243R 9243 IRFP IRFP9240 IRFP9241 IRFP9241R PDF

    GSI550

    Abstract: IGT7E50CS
    Text: Preview Products G SI550, IGT7E50CS File N um b er 2328 Current Sensing IGT Transistors Insulated Gate Bipolar Transistors 50 A, 500 V rDs on = 0.052 fi TERMINAL DIAGRAM Features: • ■ ■ ■ ■ Lo w Vce(sat) - 1 . 5 V typ. @ 50 A U ltra -fa st tu rn -o n - 200 n s ty p ic a l


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    GSI550, IGT7E50CS GSI550 IGT7E50CS 60Msec 92GS-44017 PDF

    24N60D

    Abstract: No abstract text available
    Text: HA R R I S S E M I C O N D S E C T O R '_p ' 3 <=ì - ’S I 4305271 G03SÔMÔ H H H A S H G TA 24N 60D 1C ^ H a r r is August 1991 40E D Current Se n sin g N -C h an n e l Enhancem ent-M ode Insulated Gate Bipolar Transistor IGBT) Package Features • 24A, 600V


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    150ns TA24N60D1C 24N60D PDF

    ICAN-6525

    Abstract: 74fct373 74FCT533 rca 711
    Text: HARRIS SE MI CON D SECTOR lb E D • 4302271 001M400 31 HARRIS ■ RCA ■ GE ■ ■ 7 ^ 6 - 0 7 - // CMOS Logic S E M I C O N D U C T O R HARRI S 3 I NT E RS I L C D 54 /7 4 F C T 3 7 3 , C D 54/74F C T 533 Advance Information D O - 373 533 -QO OO


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    001M400 54/74F CD54/74FCT373 CD54/74FCT533 RCA-CD54/74Fied CD74FCT373E CD74FCT373M CD74FCT533E CD74FCT533M CD54FCT373E ICAN-6525 74fct373 74FCT533 rca 711 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2 H a r r is IRFF9220, IRFF9221 IRFF9222, IRFF9223 Avalanche Energy Rated P-Channel Power MOSFETs August 1991 Features Package T0-205A F • -2 A and -2 .5 A , -1 5 0 V and -2 0 0 V BOTTOM VIEW • t q s O N = 1 - 5 0 0 and 2 .4 0 ÎÎ GATE SOURCE • Single Pulse Avalanche Energy Rated


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    IRFF9220, IRFF9221 IRFF9222, IRFF9223 T0-205A IRFF9221, FF9222 FF9223 transisto123 PDF

    IRFP462

    Abstract: IRFP460 G8TE of IRFP460 IHFP460
    Text: Preview Products File Number IRFP460, IRFP462 2291 Avalanche-Energy-Rated N-Channel Power MOSFETs 20 A and 17 A, 500 V i"DS on = 0.27 n and 0.35 fl N-CHANNEL ENHANCEMENT MODE o Features: • S ingle pulse avalanche energy rated • SOA is pow er-dissipation lim ited


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    IRFP460, IRFP462 92CS-4Z658 IRFP460 IRFP462 G8TE of IRFP460 IHFP460 PDF

    44222

    Abstract: 2N6975 442-22 ic lg 631 2N6976 2N6977 2N6978 S2GS-44222
    Text: Insulated-Gate Bipolar Transistors- 2N6975, 2N6976, 2N6977, 2N6978 File Num ber 2297 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors 5 A, 400 V and 500 V Vceom: 2 V T«: 1 /us, 0.5 /j s N-CHANNEL ENHANCEMENT MODE


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    2N6975, 2N6976, 2N6977, 2N6978 2N6977 2N6978 44222 2N6975 442-22 ic lg 631 2N6976 S2GS-44222 PDF

    IRF9520

    Abstract: IRF9523 IRF9521 IRF9522 irf9520 p channel GS 9521
    Text: Rugged Power M O SFETs IRF9520, IRF9521 IRF9522, IRF9523 File Number 2 2 8 1 Avalanche-Energy-Rated P-Channel Power M OSFETs -5 A and -6 A, -60 V and -100 V rDsiom = 0.60 Cl and 0.80 Q TERMINAL DIAGRAM o Features: • Single pulse avalanche energy rated m SOA is power-dissipation limited


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    IRF9520, IRF9521 IRF9522, IRF9523 IRF9521, IRF9522 IRF9523 IF952I IRF9520 irf9520 p channel GS 9521 PDF

    GSI510

    Abstract: transistor C 639 W IGT5E10CS Bipolar Transistors
    Text: Insulated-Gate Bipolar Transistors GSI510, IGT5E10CS File Number 2326 Current Sensing IGT Transistors Insulated Gate Bipolar Transistors 10 A, 500 V rpsion = 0.27 O TERMINAL DIAGRAM Features: m Low V'ceis«» - 2.5 V typ. @ 10 A m Ultra-fast turn-on - 100 ns typical


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    GSI510 1GT5E10CS 92GS-44006R1 IGT5E10CS GSI510, IGT5E10CS transistor C 639 W Bipolar Transistors PDF

    IRFD9123

    Abstract: IRFD9120 MOSFET IRFd9120 44202 FR 9120 irfd 92QS-44168 92GS-4420Z
    Text: Rugged Power MOSFETs File N u m b e r 2285 IRFD9120 IRFD9123 Avalanche-Energy-Rated P-Channel Power MOSFETs -1.0 A and -0.8 A, -60 V and -100 V rDston = 0.6 O and 0.8 Q TERMINAL DIAGRAM Features:


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    IRFD9120 IRFD9123 92CS-43262 IRFD9120 IRFD9123 92CS-43279 MOSFET IRFd9120 44202 FR 9120 irfd 92QS-44168 92GS-4420Z PDF

    1RF9140

    Abstract: F9142 IRF high current p-channel lts 543 pin diagram F9140 IRF 543 MOSFET
    Text: H A R R I S IRF9140, IRF9141 IRF9142, IRF9143 Avalanche Energy Rated P-Channel Power MOSFETs Ja n u ary 1 994 Package Features T O -2 0 4 A A BOTTOM VIEW • -19 A and -15A , -80 V and -100V • rQS ON = 0 .2 0 0 and 0.30H DRAIN (FLANGE) SOURCE • Single Pulse Avalanche Energy Rated


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    IRF9140, IRF9141 IRF9142, IRF9143 -100V IRF9141, IRF9142 IRF9143 1RF9140, 1RF9140 F9142 IRF high current p-channel lts 543 pin diagram F9140 IRF 543 MOSFET PDF

    f9240

    Abstract: irf9240r irf 44 n rf924
    Text: HARRIS IR F 9 2 40 , IR F9241 IRF9242, IRF9243 Avalanche Energy Rated P-Channel Power MOSFETs A ugust 1991 Features Package T O -2Û 4A A BOTTOM VIEW • -9A and -11A , -15 0 V and -200V • rDS ON = 0 .5 0 0 and 0 .7 ÎÎ • Single Pulse Avalanche Energy Rated


    OCR Scan
    F9241 -200V IRF9240, IRF9241, IRF9242 IRF9243 conveRF9242, F9243 4J26Q f9240 irf9240r irf 44 n rf924 PDF

    IFU422

    Abstract: FU420 IFU420 IRFR421 420 Diode FR420 IFR421 IRFU N-Channel Power MOSFETs
    Text: m HARRIS IRFR420/421/422 IRFU420/421/422 N-Channel Power MOSFETs Avalanche-Energy-Rated August 1991 Features Packages IR F U 4 2 0 /4 2 1 /4 2 2 T O -2 5 1 A A TOP VIEW • 2.2 A and 2 .5 A, 4 5 0 V and 5 0 0 V • rD S on = a i d 4 .0 n I SOURCE • Single Pulse A valanche Energy Rated


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    IRFR420/421/422 IRFU420/421/422 IRFR420, IRFR421, IRFR422, IRFU420, IRFU421 IRFU422 IFU422 FU420 IFU420 IRFR421 420 Diode FR420 IFR421 IRFU N-Channel Power MOSFETs PDF

    f9520

    Abstract: irf9520 IRF9520 harris
    Text: h a r r i s IRF9520, IRF9521 IRF9522, IRF9523 Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 19 9 4 Package F e a tu re s T 0 -2 2 0 A B • -5 A and -6 A , -8 0 V and - 1 00V TOP VIEW • rD S O N = 0 .6 f l and 0 .8 H • Single Pulse Avalanche Energy Rated


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    IRF9520, IRF9521 IRF9522, IRF9523 F9522, F9523 f9520 irf9520 IRF9520 harris PDF

    TC 9151 P

    Abstract: IRFP9151
    Text: IR F P 9150 IR F P 9151 S ì H A R R IS Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Package Features T O -2 4 7 • -2 5 A , -8 0 V and -1 0 0 V TOP VIEW • rD S 0 N = 0 .1 5 0 H • Single Pulse Avalanche Energy Rated SOURCE • S O A is P o w er-D issip atio n Lim ited


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    IRFP9151 92GS-44216 92CS-43323 IAF9150CF2 TC 9151 P PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ IRFD9220 IRFD9223 H a r r is Avalanche Energy Rated P-Channel Power MOSFETs J a n u a ry 1 9 9 4 Features Package 4 - PIN D U A L -IN -L IN E • -0 .4 5 A and -0 .6 A , -1 5 0 V and -2 0 0 V TOP VIEW • rD S O N = 1 .5 ft and 2 .4 ÎÎ • Single Pulse Avalanche Energy Rated


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    IRFD9220 IRFD9223 IRFD9220, /RFD9223 PDF

    fp360

    Abstract: No abstract text available
    Text: IRFP360 IRFP362 2 HARRIS N-Channel Power MOSFETs Avalanche-Energy Rated August 1991 Package F e a tu re s T O -2 4 7 • 20A and 23A, 400V TOP VIEW • rD S °n) = 0 .2 0 0 and 0 .2 5 0 • Single Pulse Avalanche Energy Rated • SOA Is Power-Dlssipation Limited


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    IRFP360 IRFP362 IRFP362 fp360 PDF

    OSKJ

    Abstract: F9220 IAFF9221 IRFF9220 IRFF9221 IRFF9222 IRFF9223 IRFF9221I 92CS-43262
    Text: Rugged Power MOSFETs File Number IRFF9220, IRFF9221 IRFF9222, IRFF9223 2288 Avalanche-Energy-Rated P-Channel Power MOSFETs -2 A and -2.5 A, -150 V and -200 V rDsioni = 1.5 O and 2.4 O TERMINAL DIAGRAM


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    IRFF9220, IRFF9221 IRFF9222, IRFF9223 IRFF9221, IRFF9223 92cs-4327e cs-43279 OSKJ F9220 IAFF9221 IRFF9220 IRFF9222 IRFF9221I 92CS-43262 PDF

    rectifier diode 1-35 LA V6

    Abstract: IRFF9120 IRFF9122 IRFF9123 IRFF9121 2CS-432T
    Text: Rugged Power MOSFETs File N u m b e r 2287 IRFF9120, IRFF9121 IRFF9122, IRFF9123 Avalanche-Energy-Rated P-Channel Power MOSFETs -3.5 A and -4 A, -60 V, -100 V fDS on = 0.60 Q and 0.80 O TERMINAL DIAGRAM D Features: • S ingle pulse avalanche energy rated


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    IRFF9120, IRFF9121 IRFF9122, IRFF9123 IRFF9121, IRFF9122 IRFF9123 92CS-43276 2CS-432TÂ rectifier diode 1-35 LA V6 IRFF9120 IRFF9121 2CS-432T PDF